Vishay Siliconix IRFPE40
- Part No.:
- IRFPE40
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFPE40.pdf
- Description:
- MOSFET N-CH 800V 5.4A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,107
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Product details
Overview
IRFPE40 from Vishay Siliconix is an 800 V, 5.4 A N-channel power MOSFET in TO-247AC package, featuring 2.0 Ω RDS(on) at VGS = 10 V, 130 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, motor drives, and industrial SMPS where ruggedness and fast switching are critical.
For engineers reviewing the IRFPE40 datasheet, IRFPE40 pinout, IRFPE40 application, or IRFPE40 equivalent, key selection criteria include its isolated mounting hole for enhanced creepage, 490 mJ single-pulse avalanche energy, 2.0 V/ns peak diode recovery dV/dt capability, and compatibility with standard gate drivers due to simple drive requirements.
Technical Context
The IRFPE40 employs a third-generation planar vertical DMOS structure optimized for high-voltage operation and avalanche robustness. Its design integrates a low-inductance internal source (13 nH) and drain (5 nH) path to minimize switching oscillations and improve EMI performance in hard-switched topologies.
It supports unclamped inductive switching with validated repetitive avalanche current of 5.4 A and energy of 15 mJ, enabling reliable operation in flyback, forward, and resonant converter designs without external snubbers under defined thermal limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 800 V - Supports primary-side switching in offline 400 V AC-input SMPS and industrial HV DC bus applications |
| RDS(on) @ VGS = 10 V | 2.0 Ω - Enables low conduction loss at 5.4 A continuous drain current (TC = 25 °C) |
| Qg | 130 nC - Determines gate driver power requirement and switching speed in 100–500 kHz converters |
| EAS | 490 mJ - Specifies maximum single-pulse inductive energy handling before junction failure |
| dV/dt Rating | 2.0 V/ns - Ensures immunity to false turn-on during high dv/dt transients in bridge configurations |
| TJ Range | −55 to +150 °C - Allows deployment in extended-temperature industrial environments without derating |
| RthJC | 0.83 °C/W - Defines thermal bottleneck between die and heatsink; enables 150 W dissipation with ≤125 °C ΔT |
Pinout & Package
IRFPE40 is housed in a TO-247AC package with isolated central mounting hole, 3.61 mm diameter screw hole (ØP), and 15.15 mm lead-to-lead length (L). The package provides ≥8 mm creepage distance between drain and source pins, meeting IEC/UL 62368-1 reinforced insulation requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures reliable turn-on with standard PWM controllers |
| 2 (Drain) | High-side power terminal | Connected to HV rail; electrically isolated from mounting surface via plastic body and thermal pad contour |
| 3 (Source) | Power return / reference node | Serves as local ground reference for gate drive; internal 13 nH source inductance impacts switching waveform fidelity |
| 4 (Drain) | Second drain connection | Parallel drain path reduces current density and improves thermal spreading; shares same potential as Pin 2 |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | 5.4 A IAR, 15 mJ EAR - Eliminates need for external clamping in inductive load switching |
| Isolated central mounting hole | 3.61 mm ØP with 1.5° max draft - Enables direct heatsink attachment without electrical shorting to drain |
| Dynamic dV/dt rating | 2.0 V/ns - Prevents spurious turn-on in half-bridge or full-bridge topologies with fast-rising bus voltages |
| Fast switching | 16 ns td(on), 36 ns tr, 100 ns td(off), 32 ns tf - Reduces switching losses in 200–400 kHz SMPS designs |
| Low Qgd/Qg ratio | 72/130 = 55% - Improves Miller immunity and enables stable operation with moderate gate resistance |
Applications
| Industrial Motor Drives | Offline SMPS |
|---|---|
Use Scenario: 3-phase inverter stage for 0.5–2 kW brushless DC motors in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side N-channel switch in six-step commutation; operates at 10–20 kHz PWM frequency. Use Value: Repetitive avalanche rating absorbs inductive kickback during freewheeling, eliminating external flyback diodes and reducing BOM count. | Use Scenario: Primary-side switch in 300 W universal-input flyback converter for industrial control power supplies. IC Role / Device Role / Timing Role: Main power switch subjected to 600 V reflected output voltage and unclamped inductive stress. Use Value: 490 mJ EAS withstands worst-case startup and overload conditions without failure, improving system reliability. |
| High-Voltage DC-DC Converters | Induction Heating Systems |
Use Scenario: Step-up stage in 48 V to 400 V bi-directional DC-DC for energy storage systems. IC Role / Device Role / Timing Role: Synchronous rectifier or main switch in phase-shifted full-bridge topology operating at 100–150 kHz. Use Value: Low RDS(on) (2.0 Ω) minimizes conduction loss at 5.4 A, while 130 nC Qg enables efficient gate driving with integrated drivers. | Use Scenario: Half-bridge inverter driving 20–50 kHz resonant tank for metal heating in industrial furnaces. IC Role / Device Role / Timing Role: Fast-switching high-voltage switch subject to high di/dt (≤120 A/μs) and reverse recovery stress. Use Value: 550–830 ns trr and 2.4–3.6 μC Qrr reduce body diode losses during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW80NF55 | 800 V, 55 A, RDS(on) = 0.06 Ω, TO-247 - higher current, lower RDS(on), but larger die and higher Qg (230 nC) | Better suited for high-current, low-loss 50–100 kHz inverters; overqualified for <5 A applications | Select when system requires >10 A continuous current and can accommodate higher gate drive power |
| FQP8N80C | 800 V, 8 A, RDS(on) = 1.4 Ω, TO-220 - lower cost, smaller package, no isolated mounting hole | Limited to lower-power (<100 W) applications; lacks avalanche rating and creepage compliance for industrial safety standards | Choose for cost-sensitive consumer-grade power supplies where isolation and ruggedness are not mandatory |
Compared with STW80NF55 and FQP8N80C, the IRFPE40 uniquely balances 5.4 A current capability, 2.0 Ω on-resistance, TO-247AC isolation, and verified repetitive avalanche performance-making it optimal for mid-power industrial converters requiring safety-compliant mechanical layout and field reliability.
Availability
IRFPE40 is available at Aetrix Electronics and suitable for industrial motor drives, offline SMPS, high-voltage DC-DC converters, and induction heating systems requiring stable component supply across multi-year production cycles.
Supply support for IRFPE40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFPE40 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for ruggedized switching in harsh industrial environments with emphasis on avalanche survivability and thermal robustness.
FAQ
What is the maximum continuous drain current rating for IRFPE40 at 100 °C case temperature?
The IRFPE40 has a continuous drain current rating of 3.4 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied in thermal design calculations to ensure junction temperature remains ≤150 °C under steady-state operation.
Does IRFPE40 support logic-level gate drive?
No, IRFPE40 is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for RDS(on) at VGS = 10 V. Reliable enhancement-mode operation requires ≥10 V gate drive; 5 V logic signals will not fully turn on the device and may cause excessive conduction loss or thermal runaway.
What is the purpose of the isolated central mounting hole in the IRFPE40 TO-247AC package?
The isolated central mounting hole in the IRFPE40 TO-247AC package electrically separates the drain-connected metal tab from the heatsink mounting surface. This enables direct mechanical attachment to grounded heatsinks without shorting the drain to chassis ground-critical for meeting IEC 62368-1 creepage and clearance requirements in industrial power supplies.
Can IRFPE40 be used in parallel configurations?
Yes, the IRFPE40 is designed for ease of paralleling, as confirmed by Vishay's datasheet features. Its positive temperature coefficient of RDS(on) (shown in Fig. 4) promotes current sharing, and low gate charge (130 nC) simplifies matched gate drive design. Use individual gate resistors and symmetrical PCB layout to ensure balanced dynamic current distribution.
What is the peak diode recovery dV/dt rating for IRFPE40, and why does it matter?
The IRFPE40 has a peak diode recovery dV/dt rating of 2.0 V/ns, measured under specified test conditions. This parameter quantifies the device's immunity to false turn-on during the body diode's reverse recovery event-critical in bridge circuits where rapid bus voltage rise could trigger unintended conduction and shoot-through failure.
IRFPE40 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 800 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 3.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFPE40 FAQ
1.How can I place an order for IRFPE40 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFPE40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFPE40 reliable?
The price and inventory of IRFPE40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPE40 is usually 5 days.
3.What payment methods are accepted for IRFPE40?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPE40 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFPE40?
IRFPE40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFPE40 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFPE40?
For technical support, including IRFPE40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPE40 requirements.
6.How does Aetrix verify that IRFPE40 is sourced from the original manufacturer or authorized distributors?
All IRFPE40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPE40 meets industry standards.
7.What is the process for return or replacement of IRFPE40?
All IRFPE40 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPE40, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFPE40 part is unused and in its original packaging.
Return procedure for IRFPE40:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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