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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPE40PBF

Name: IRFPE40PBF
Brand: Vishay Siliconix
SKU: IRFPE40PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPE40PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPE40PBF.pdf

Description:: MOSFET N-CH 800V 5.4A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPE40PBF from Vishay Siliconix is an 800 V, 5.4 A N-channel power MOSFET in TO-247AC package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 130 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, offline SMPS, and industrial motor drives.

For engineers reviewing the IRFPE40PBF datasheet, IRFPE40PBF pinout, IRFPE40PBF application, or IRFPE40PBF equivalent, key selection criteria include its isolated mounting hole for enhanced creepage, 490 mJ single-pulse avalanche energy, fast switching (16 ns turn-on delay), ruggedized dV/dt capability (2.0 V/ns), and compatibility with high-temperature operation up to +150 °C junction.

Technical Context

This third-generation power MOSFET uses planar vertical DMOS technology optimized for high-voltage switching with low conduction loss and robust transient handling. Its design integrates a fast-recovery body diode (t_rr = 550–830 ns) and low internal source/drain inductance (L_S = 13 nH, L_D = 5.0 nH) to minimize switching oscillations and improve EMI performance.

The device operates with simple gate drive requirements (±20 V V_GS rating, 100 nA I_GSS) and supports parallel operation due to positive R_DS(on) temperature coefficient. Thermal resistance of 0.83 °C/W (junction-to-case) enables high-power dissipation (150 W at T_C = 25 °C) when mounted on properly heatsinked surfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands mains-referenced DC bus voltages in 380–400 V AC input systems without derating.
R_DS(on)	2.0 Ω @ V_GS = 10 V - Enables <5.4 A continuous conduction with ≤11.7 W conduction loss at full load.
Q_g	130 nC - Requires moderate gate driver current (e.g., 13 mA avg. for 10 µs turn-on) for efficient high-frequency switching.
E_AS	490 mJ - Supports unclamped inductive switching in flyback or forward converters without external snubbers.
t_r/t_f	36 ns / 32 ns - Reduces switching transition time, lowering overlap losses in hard-switched topologies.
T_J Range	–55 to +150 °C - Suitable for industrial environments with wide ambient temperature swings and sealed enclosures.
dV/dt Rating	2.0 V/ns - Resists false triggering during high dv/dt transients common in high-side switching configurations.

Pinout & Package

IRFPE40PBF is housed in a TO-247AC package with isolated central mounting hole, 3.61 mm diameter screw hole (ØP), and 0.83 °C/W thermal resistance from junction to case. The plastic body conforms to JEDEC TO-247 outline with optional thermal pad contour (D1/E1).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 10 V logic-level gate drive; ±20 V absolute max rating protects against overvoltage stress.
2 (Drain)	High-side power terminal	Connected to drain metallization; electrically tied to case-requires isolation from heatsink unless floating configuration.
3 (Source)	Reference node	Serves as return path for load current and gate drive reference; low-inductance layout critical for stable switching.
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance in high-current paths.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands 5.4 A repetitive avalanche current (I_AR) and 15 mJ energy per pulse-enables reliable operation under short-circuit or overload conditions without immediate failure.
Isolated central mounting hole	Enables direct mechanical attachment to heatsink while maintaining electrical isolation between drain and heatsink-eliminates need for insulating washers in many designs.
Fast switching with low Q_gd/Q_gs	Q_gd = 72 nC and Q_gs = 17 nC yield Miller ratio ~4.2-reduces risk of shoot-through and improves controllability during hard switching.
Dynamic dV/dt rating	Rated for 2.0 V/ns-ensures immunity to parasitic turn-on in high-speed, high-voltage half-bridge applications where rapid voltage transitions occur across the device.
Body diode with low Q_rr	Q_rr = 2.4–3.6 µC and t_rr = 550–830 ns-minimizes reverse recovery losses in synchronous rectification or freewheeling paths.

Applications

Industrial Motor Drives	Offline Switch-Mode Power Supplies
Use Scenario: High-voltage IGBT gate driver auxiliary supply and brake chopper stage in 3-phase VFDs operating from 400 V AC mains. IC Role / Device Role / Timing Role: N-channel power switch controlling energy dump into braking resistor during deceleration. Use Value: 490 mJ single-pulse avalanche energy absorbs regenerative energy spikes without external clamping, reducing BOM count and board space.	Use Scenario: Primary-side switch in 100–300 W universal-input flyback or forward converter for industrial control power supplies. IC Role / Device Role / Timing Role: High-voltage power switch turning on/off transformer primary winding at 65–100 kHz. Use Value: 800 V V_DS rating allows direct operation from 380 V DC bus without series stacking, simplifying topology and improving reliability.
High-Voltage DC-DC Converters	Uninterruptible Power Systems
Use Scenario: Isolated boost stage in 48 V to 380 V DC-DC converter for telecom or data center power architecture. IC Role / Device Role / Timing Role: Main switching element in high-side configuration handling >300 V output regulation. Use Value: Low R_DS(on) (2.0 Ω) limits conduction loss to <5.5 W at 5.4 A, enabling >94% efficiency at full load with passive cooling.	Use Scenario: Inverter output stage in line-interactive UPS supporting 230 V AC output with battery backup. IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter leg converting 360–400 V DC bus to clean sine-wave AC output. Use Value: Repetitive avalanche rating (I_AR = 5.4 A) ensures survival during grid sync transients and load dump events without desaturation protection circuitry.

Industrial Motor Drives

Offline Switch-Mode Power Supplies

Use Scenario: High-voltage IGBT gate driver auxiliary supply and brake chopper stage in 3-phase VFDs operating from 400 V AC mains.

IC Role / Device Role / Timing Role: N-channel power switch controlling energy dump into braking resistor during deceleration.

Use Value: 490 mJ single-pulse avalanche energy absorbs regenerative energy spikes without external clamping, reducing BOM count and board space.

Use Scenario: Primary-side switch in 100–300 W universal-input flyback or forward converter for industrial control power supplies.

IC Role / Device Role / Timing Role: High-voltage power switch turning on/off transformer primary winding at 65–100 kHz.

Use Value: 800 V V_DS rating allows direct operation from 380 V DC bus without series stacking, simplifying topology and improving reliability.

High-Voltage DC-DC Converters

Uninterruptible Power Systems

Use Scenario: Isolated boost stage in 48 V to 380 V DC-DC converter for telecom or data center power architecture.

IC Role / Device Role / Timing Role: Main switching element in high-side configuration handling >300 V output regulation.

Use Value: Low R_DS(on) (2.0 Ω) limits conduction loss to <5.5 W at 5.4 A, enabling >94% efficiency at full load with passive cooling.

Use Scenario: Inverter output stage in line-interactive UPS supporting 230 V AC output with battery backup.

IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter leg converting 360–400 V DC bus to clean sine-wave AC output.

Use Value: Repetitive avalanche rating (I_AR = 5.4 A) ensures survival during grid sync transients and load dump events without desaturation protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80NF80	800 V, 80 A, R_DS(on) = 0.1 Ω, TO-247 package, higher current rating but larger die size and 250 nC Q_g.	Better suited for high-current, lower-frequency (<50 kHz) applications; less optimal for high-frequency, low-duty-cycle switching.	Select STW80NF80 only when continuous current exceeds 5.4 A and gate drive capability supports 250 nC charge.
IXTH80N10L2	100 V, 80 A, logic-level gate, TO-247 package-lower voltage rating, incompatible for 800 V systems.	Not suitable for primary-side high-voltage switching; limited to low-voltage DC-DC or motor control stages.	Reject IXTH80N10L2 for any application requiring ≥600 V blocking; use only in sub-100 V secondary-side circuits.

Compared with STW80NF80 and IXTH80N10L2, IRFPE40PBF offers the optimal balance of 800 V rating, manageable 130 nC gate charge, and proven avalanche ruggedness for mid-power industrial switching-making it preferable where voltage headroom, thermal margin, and transient robustness outweigh raw current capacity.

Availability

IRFPE40PBF is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFPE40PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFPE40PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for industrial and commercial power conversion systems demanding high blocking voltage, avalanche tolerance, and thermal stability.

FAQ

What is the maximum continuous drain current rating for IRFPE40PBF at 100 °C case temperature?

The IRFPE40PBF has a continuous drain current rating of 3.4 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be observed to maintain junction temperature ≤150 °C. At 25 °C case temperature, the rating increases to 5.4 A. Designers must verify heatsink performance and ambient conditions to ensure safe operation of the IRFPE40PBF under sustained load.

Does IRFPE40PBF have a built-in body diode, and what are its key recovery characteristics?

Yes, IRFPE40PBF includes an integral body diode formed by the MOSFET's p-n junction. Its key recovery specs are t_rr = 550–830 ns and Q_rr = 2.4–3.6 µC at T_J = 25 °C, I_F = 5.4 A, and dI/dt = 100 A/µs. These values indicate moderate reverse recovery behavior-suitable for non-synchronous rectification in flyback or forward converters but not optimized for high-frequency synchronous rectification. The IRFPE40PBF body diode is rated for 5.4 A continuous and 22 A pulsed forward current.

Can IRFPE40PBF be used in parallel configurations, and what design considerations apply?

Yes, IRFPE40PBF supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing across multiple devices. Critical design considerations include matched gate drive impedance (R_g), symmetrical PCB layout with equal trace lengths to each gate/source, and individual gate resistors to dampen oscillations. Because the IRFPE40PBF has low internal source inductance (13 nH), layout-induced imbalances dominate-so Kelvin-source routing and separate gate drivers per device are recommended for stable parallel operation of the IRFPE40PBF.

What is the thermal resistance from junction to case (R_thJC) for IRFPE40PBF, and how does it impact heatsink selection?

The junction-to-case thermal resistance (R_thJC) for IRFPE40PBF is 0.83 °C/W maximum, measured from junction to the drain metallization (case). This low value enables efficient heat transfer to the heatsink when mounted with thermal compound on a flat, greased surface. For example, at 150 W dissipation (T_C = 25 °C), the junction rise is 124.5 °C-leaving only 25.5 °C margin before reaching 150 °C T_J. Thus, heatsink selection must account for both R_thCS (0.24 °C/W typical) and ambient conditions to ensure the IRFPE40PBF remains within safe operating limits.

Is IRFPE40PBF lead-free and RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, IRFPE40PBF is lead-free and RoHS-compliant. The 'PbF' suffix explicitly denotes lead-free (Pb-free) construction per EU RoHS Directive 2011/65/EU and Vishay's material compliance standard. The device uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. No exemptions are applied-the IRFPE40PBF contains no intentionally added lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), confirming full regulatory compliance for global industrial deployment.

IRFPE40PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 3.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPE40PBF FAQ

1.How can I place an order for IRFPE40PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPE40PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPE40PBF reliable?

The price and inventory of IRFPE40PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPE40PBF is usually 5 days.

3.What payment methods are accepted for IRFPE40PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPE40PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPE40PBF?

IRFPE40PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPE40PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPE40PBF?

For technical support, including IRFPE40PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPE40PBF requirements.

6.How does Aetrix verify that IRFPE40PBF is sourced from the original manufacturer or authorized distributors?

All IRFPE40PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPE40PBF meets industry standards.

7.What is the process for return or replacement of IRFPE40PBF?

All IRFPE40PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPE40PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPE40PBF part is unused and in its original packaging.

Return procedure for IRFPE40PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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