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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPE50

Name: IRFPE50
Brand: Vishay Siliconix
SKU: IRFPE50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPE50

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPE50.pdf

Description:: MOSFET N-CH 800V 7.8A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPE50 from Vishay Siliconix is an 800 V, 7.8 A N-channel power MOSFET in TO-247AC package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 200 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC motor drives, and industrial SMPS where ruggedness and fast switching are critical.

For engineers reviewing the IRFPE50 datasheet, IRFPE50 pinout, IRFPE50 application, or IRFPE50 equivalent, this device's isolated mounting hole, 2.0 V/ns peak diode recovery dV/dt, and 770 mJ single-pulse avalanche energy support robust high-side switching in unclamped inductive circuits without snubbers.

Technical Context

The IRFPE50 employs a third-generation planar vertical DMOS structure optimized for high-voltage operation with controlled body diode reverse recovery (trr = 650–980 ns) and low Crss (490 pF), enabling stable hard-switching up to 100 kHz. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V drivers while maintaining noise immunity.

Thermal design is enabled by R_thJC = 0.65 °C/W and R_thCS = 0.24 °C/W, supporting >150 W continuous dissipation at TC = 25 °C. The TO-247AC package provides ≥5.46 mm lead pitch and isolated central mounting hole-meeting IEC/UL creepage requirements for 600 V working voltage systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in offline 400 V AC-input SMPS and 600 V bus inverters without derating.
R_DS(on)	1.2 Ω @ V_GS = 10 V - limits conduction loss to ≤44 W at 7.8 A, enabling compact heatsink sizing in 1–3 kW designs.
Q_g	200 nC - requires ≥2 A peak gate drive for <100 ns switching transitions; compatible with UCC3895, IR2110, or similar high-current drivers.
E_AS	770 mJ - withstands unclamped inductive energy from 7.8 A load current without failure, eliminating need for external clamping in flyback or forward converters.
dV/dt Rating	2.0 V/ns - suppresses false turn-on during high dv/dt commutation in half-bridge topologies with minimal gate resistor tuning.
T_J Range	−55 to +150 °C - qualified for industrial ambient environments and sealed enclosures with passive cooling.

Pinout & Package

IRFPE50 uses the TO-247AC package: 3-terminal, through-hole, isolated central mounting hole, 5.46 mm lead pitch, and thermal pad on drain tab. Dimensions conform to JEDEC TO-247AC (Document 91360, Version 1–3).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level signal; 24 nC Q_gs enables predictable Miller plateau timing and low EMI turn-on.
2 (Drain)	High-voltage power output	Connected to drain terminal and thermal pad; carries full load current and dissipates heat directly to heatsink via isolated mounting hole.
3 (Source)	Power return reference	Serves as local ground reference for gate driver; internal source inductance (L_S = 13 nH) impacts diode recovery ringing and must be minimized in layout.
4 (Drain)	Redundant drain connection	Second drain pin improves current sharing and thermal path integrity; required for full 190 W PD rating and mechanical stability under thermal cycling.

Key Features

Feature	Design Value
Dynamic dV/dt rated	2.0 V/ns guaranteed - prevents spurious turn-on in high-speed bridge configurations without gate clamping diodes.
Repetitive avalanche rated	19 mJ per pulse, 7.8 A I_AR - enables reliable operation under short-circuit conditions in UPS and servo amplifier protection schemes.
Isolated central mounting hole	3.61 mm diameter, 1.5° draft angle - allows secure mechanical attachment to heatsink without electrical shorting to drain, meeting UL 60950 creepage requirements.
Fast switching	t_r = 38 ns, t_f = 39 ns @ 400 V/7.8 A - reduces switching losses below 0.5 W at 50 kHz, improving efficiency in high-frequency PFC stages.
Ease of paralleling	Positive R_DS(on) temperature coefficient - ensures current sharing stability across multiple IRFPE50 devices in parallel high-current outputs.

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives for pumps and compressors. IC Role / Device Role / Timing Role: High-side N-channel switch in 600 V DC bus topology, operating at 4–8 kHz PWM with active short-circuit protection. Use Value: Repetitive avalanche rating (I_AR = 7.8 A) sustains fault currents during IGBT desaturation events, avoiding catastrophic failure during motor stall.	Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with 380–400 V DC input and 48 V output. IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology, requiring low C_oss (800 pF) and controlled Q_gd/Q_gs ratio for ZVS initiation. Use Value: 110 nC Q_gd and 24 nC Q_gs yield optimal Miller ratio (4.6), enabling reliable zero-voltage switching down to 25% load.
Uninterruptible Power Supplies	Induction Heating Systems
Use Scenario: Inverter bridge in online double-conversion UPS delivering clean 230 V AC from 400 V DC battery bank. IC Role / Device Role / Timing Role: Low-loss switching element handling 7.8 A RMS output current with <100 ns dead-time control. Use Value: 1.2 Ω R_DS(on) limits conduction loss to 72 W at full load, reducing thermal stress on heatsink and fan requirements.	Use Scenario: Resonant half-bridge in 3–5 kW induction cooktops operating at 20–50 kHz with high di/dt loads. IC Role / Device Role / Timing Role: Fast-recovery body diode (Q_rr = 3.8–5.7 μC) handles reverse conduction during ZVS transitions without oscillation. Use Value: 650–980 ns trr and 1.8 V V_SD minimize body diode conduction loss and EMI during resonant ringback, improving system efficiency by ≥1.2%.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Three-phase inverter stage in 5–10 kW variable-frequency drives for pumps and compressors.

IC Role / Device Role / Timing Role: High-side N-channel switch in 600 V DC bus topology, operating at 4–8 kHz PWM with active short-circuit protection.

Use Value: Repetitive avalanche rating (I_AR = 7.8 A) sustains fault currents during IGBT desaturation events, avoiding catastrophic failure during motor stall.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with 380–400 V DC input and 48 V output.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in phase-shifted full-bridge topology, requiring low C_oss (800 pF) and controlled Q_gd/Q_gs ratio for ZVS initiation.

Use Value: 110 nC Q_gd and 24 nC Q_gs yield optimal Miller ratio (4.6), enabling reliable zero-voltage switching down to 25% load.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Inverter bridge in online double-conversion UPS delivering clean 230 V AC from 400 V DC battery bank.

IC Role / Device Role / Timing Role: Low-loss switching element handling 7.8 A RMS output current with <100 ns dead-time control.

Use Value: 1.2 Ω R_DS(on) limits conduction loss to 72 W at full load, reducing thermal stress on heatsink and fan requirements.

Use Scenario: Resonant half-bridge in 3–5 kW induction cooktops operating at 20–50 kHz with high di/dt loads.

IC Role / Device Role / Timing Role: Fast-recovery body diode (Q_rr = 3.8–5.7 μC) handles reverse conduction during ZVS transitions without oscillation.

Use Value: 650–980 ns trr and 1.8 V V_SD minimize body diode conduction loss and EMI during resonant ringback, improving system efficiency by ≥1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW80N80	800 V, 80 A, R_DS(on) = 0.095 Ω, Q_g = 220 nC, TO-247 long leads	Higher current rating but larger die size increases switching loss; lacks isolated mounting hole.	Prefer when higher continuous current (>15 A) is needed; verify creepage compliance with custom heatsink isolation.
IXTH80N10L2	1000 V, 80 A, R_DS(on) = 0.11 Ω, Q_g = 260 nC, TO-247 non-isolated	Higher voltage margin but 30% higher Q_g; no avalanche rating specified; higher V_GS(th) (3.5–6.5 V).	Choose only if 1000 V blocking is mandatory; not recommended for avalanche-prone circuits due to missing EAR/EAS specs.

Compared with STW80N80 and IXTH80N10L2, the IRFPE50 offers superior avalanche ruggedness (770 mJ E_AS) and certified isolated mounting-making it uniquely suited for cost-sensitive, safety-critical industrial inverters where layout simplicity and fault tolerance outweigh raw current density.

Availability

IRFPE50 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRFPE50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFPE50 belongs to Vishay's third-generation high-voltage Power MOSFET family, engineered for ruggedized switching in harsh industrial environments with emphasis on avalanche survivability, thermal stability, and ease of PCB layout.

FAQ

What is the maximum continuous drain current for IRFPE50 at 100 °C case temperature?

The IRFPE50 supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance using R_thJC = 0.65 °C/W and R_thCS = 0.24 °C/W values to maintain reliability. The IRFPE50 maintains stable R_DS(on) over temperature due to its positive temperature coefficient.

Does IRFPE50 have a fully rated avalanche capability, and what are the key parameters?

Yes, the IRFPE50 is explicitly repetitive avalanche rated: I_AR = 7.8 A, E_AR = 19 mJ, and single-pulse E_AS = 770 mJ. These values are measured under defined test conditions (V_DD = 50 V, L = 23 mH, R_g = 25 Ω). The IRFPE50's avalanche ruggedness enables use in unclamped inductive switching without external snubbers-critical for flyback, forward, and LLC resonant converter designs where voltage overshoot is expected.

What is the gate threshold voltage range for IRFPE50, and how does it affect drive circuit design?

The IRFPE50 has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This moderate threshold ensures compatibility with standard 10 V gate drivers while providing noise immunity against spurious turn-on. Because the IRFPE50 is not a logic-level device, 5 V microcontroller outputs cannot reliably drive it; a dedicated gate driver such as the IR2110 or UCC27531 is required to achieve full enhancement and minimize conduction loss.

How does the TO-247AC package of IRFPE50 differ from standard TO-247, and why does it matter?

The TO-247AC package used by IRFPE50 features an isolated central mounting hole-unlike standard TO-247 variants-which electrically separates the heatsink interface from the drain terminal. This design meets IEC/UL creepage requirements for 600 V working voltage and eliminates the need for insulating pads or shoulder washers. The IRFPE50's TO-247AC also provides greater creepage distance between pins, enhancing safety in industrial power supplies and motor drives where regulatory certification is mandatory.

What are the body diode characteristics of IRFPE50, and how do they impact resonant converter performance?

The IRFPE50's integral body diode exhibits V_SD = 1.8 V at I_S = 7.8 A and T_J = 25 °C, with reverse recovery time (t_rr) of 650–980 ns and Q_rr of 3.8–5.7 μC. These values enable efficient operation in ZVS and LLC topologies where the body diode conducts during dead time. Low Q_rr minimizes recovery loss and EMI, while consistent t_rr across temperature supports stable resonant frequency tracking. The IRFPE50's diode performance is validated per Fig. 7 and Fig. 17 in the official datasheet.

IRFPE50 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPE50 FAQ

1.How can I place an order for IRFPE50 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPE50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPE50 reliable?

The price and inventory of IRFPE50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPE50 is usually 5 days.

3.What payment methods are accepted for IRFPE50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPE50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPE50?

IRFPE50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPE50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPE50?

For technical support, including IRFPE50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPE50 requirements.

6.How does Aetrix verify that IRFPE50 is sourced from the original manufacturer or authorized distributors?

All IRFPE50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPE50 meets industry standards.

7.What is the process for return or replacement of IRFPE50?

All IRFPE50 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPE50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPE50 part is unused and in its original packaging.

Return procedure for IRFPE50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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