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Vishay Siliconix IRFPF30PBF
- Part No.:
- IRFPF30PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFPF30PBF.pdf
- Description:
- MOSFET N-CH 900V 3.6A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,644
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Product details
Overview
IRFPF30PBF from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-247AC package, featuring 3.7 Ω RDS(on) at VGS = 10 V, 78 nC total gate charge, and repetitive avalanche rating-designed for high-voltage flyback converters, AC-DC front-end switches, and industrial motor control snubbers.
For engineers reviewing the IRFPF30PBF datasheet, IRFPF30PBF pinout, IRFPF30PBF application, or IRFPF30PBF equivalent, key selection criteria include its isolated mounting hole for enhanced creepage, dV/dt ruggedness up to 1.5 V/ns, body diode trr of 430–650 ns, and suitability for unclamped inductive switching with 170 mJ single-pulse avalanche energy.
Technical Context
This third-generation planar vertical MOSFET uses ruggedized die construction with dynamic dV/dt rating and integrated body diode optimized for fast recovery (trr ≤ 650 ns) and low Qrr (1.4–2.1 μC). Its gate threshold voltage (2.0–4.0 V) enables standard 10 V logic-level drive without requiring level-shifting circuitry.
The device operates across -55 °C to +150 °C junction temperature range and delivers 125 W maximum power dissipation at TC = 25 °C, supported by low RthJC of 1.0 °C/W and isolated central mounting hole enabling secure mechanical attachment and thermal interface to heatsinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 900 V - supports primary-side switching in offline SMPS up to 600 V DC bus with safety margin |
| RDS(on) | 3.7 Ω @ VGS = 10 V - determines conduction loss in continuous current paths; enables <3.6 A RMS operation at 100 °C case |
| Qg | 78 nC - defines gate drive power requirement and switching speed trade-off in hard-switched topologies |
| EAS | 170 mJ - enables reliable operation under unclamped inductive turn-off without external snubber |
| trr | 430–650 ns - limits reverse recovery losses and EMI generation during diode commutation |
| RthJC | 1.0 °C/W - allows direct thermal path from die to heatsink; supports >100 W dissipation with modest heatsinking |
| ID (TC = 100 °C) | 2.3 A - defines usable current capability in thermally constrained industrial enclosures |
Pinout & Package
IRFPF30PBF is housed in TO-247AC package with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. The plastic body provides ≥8 mm creepage between drain and source pins per safety standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Receives 10 V drive signal; 10 nC Qgs ensures rapid turn-on with minimal Miller effect |
| 2 (Drain) | High-voltage power terminal | Connected to 900 V-rated drain region; electrically isolated from mounting tab for safe heatsink grounding |
| 3 (Source) | Power return and reference node | Serves as local ground reference for gate drive; ties to PCB source plane with low-inductance layout |
| 4 (Drain) | Redundant high-current drain path | Dual-drain configuration lowers package inductance (LD = 5.0 nH) and improves current sharing in parallel designs |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rated | 1.5 V/ns - suppresses false turn-on during high dv/dt transients in bridge-leg or flyback transformer leakage spikes |
| Repetitive avalanche rated | 13 mJ per pulse - enables robust operation in circuits with inductive load interruption without derating |
| Isolated central mounting hole | 3.61 mm diameter, draft-controlled - permits mechanical attachment to grounded heatsink without shorting drain to chassis |
| Fast switching | td(on) = 14 ns, tf = 30 ns - reduces switching losses in 50–100 kHz SMPS while maintaining EMI compliance |
| Ease of paralleling | Dual drain leads + low RDS(on) tolerance - minimizes current imbalance without gate resistors in multi-device configurations |
Applications
| Industrial AC-DC Power Supplies | High-Voltage Flyback Converters |
|---|---|
|
Use Scenario: Primary-side switch in 100–300 W universal-input offline SMPS with active clamp or RCD snubber. IC Role / Device Role / Timing Role: High-side N-channel switching element handling 700 V DC link, operating at 65 kHz with 50% duty cycle. Use Value: 900 V VDS rating provides 20% margin over 720 V peak rectified line; 170 mJ EAS absorbs leakage energy without snubber loss. |
Use Scenario: Main power switch in isolated 48 V/5 A telecom flyback with 400 V input. IC Role / Device Role / Timing Role: Single-ended forward/flyback switch controlling energy transfer via transformer primary winding. Use Value: 3.7 Ω RDS(on) limits conduction loss to <1.5 W at full load; 430 ns trr reduces diode recovery loss and output ripple. |
| Motor Drive Snubber Circuits | High-Reliability Industrial Inverters |
|
Use Scenario: Clamping switch in IGBT-based three-phase inverter braking circuits for HVAC compressors. IC Role / Device Role / Timing Role: Avalanche-rated freewheeling path absorbing inductive kickback during rapid IGBT turn-off. Use Value: Repetitive 13 mJ avalanche energy rating sustains repeated 100 A/μs dI/dt events; isolated mounting hole prevents chassis shorts. |
Use Scenario: DC-link protection switch in 400 V solar string inverters with anti-islanding requirements. IC Role / Device Role / Timing Role: High-voltage isolation switch enabling safe maintenance disconnect and fault clearing. Use Value: 150 °C max TJ and 1.0 °C/W RthJC support long-term operation in sealed outdoor enclosures; RoHS-compliant Pb-free finish. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW9NK90Z | 900 V, 8.5 A, RDS(on) = 1.4 Ω, Qg = 65 nC, TO-247 package | Higher current rating but lower avalanche ruggedness (EAS = 120 mJ); no isolated mounting hole | Preferred where higher continuous current is needed and avalanche stress is limited; requires modified heatsink isolation |
| IXTH3N90L | 900 V, 3.0 A, RDS(on) = 4.5 Ω, Qg = 42 nC, TO-247 package | Lower gate charge enables faster switching, but reduced current and higher on-resistance increase conduction loss | Better for high-frequency resonant topologies where switching loss dominates; less suitable for hard-switched 50–100 kHz designs |
Compared with STW9NK90Z and IXTH3N90L, IRFPF30PBF offers balanced trade-offs: superior avalanche ruggedness versus STW9NK90Z, and higher current capability versus IXTH3N90L-making it optimal for industrial flyback and snubber applications demanding reliability over raw speed or current density.
Availability
IRFPF30PBF is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, high-voltage flyback converters, and motor drive snubber circuits requiring stable component supply and long-lifecycle support.
Supply support for IRFPF30PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFPF30PBF belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness in unclamped inductive switching and safety-critical industrial power conversion.
FAQ
What is the maximum continuous drain current for IRFPF30PBF at 100 °C case temperature?
The IRFPF30PBF supports 2.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 3.6 A rating at 25 °C and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions for IRFPF30PBF.
Does IRFPF30PBF have an isolated mounting hole, and why does it matter?
Yes, IRFPF30PBF features an isolated central mounting hole per TO-247AC mechanical specification. This isolation prevents electrical shorting between the drain terminal and heatsink, enabling direct attachment to grounded metal chassis without compromising safety insulation. It also increases creepage distance to meet IEC/UL 62368-1 requirements-critical for IRFPF30PBF use in AC mains-connected equipment.
What is the typical body diode reverse recovery time (trr) of IRFPF30PBF, and how does it affect design?
The IRFPF30PBF body diode exhibits trr = 430–650 ns at TJ = 25 °C, IF = 3.6 A, and dI/dt = 100 A/μs. This fast recovery minimizes reverse recovery losses and associated voltage overshoot during commutation, reducing stress on the MOSFET and adjacent components. For IRFPF30PBF, this enables efficient operation in flyback and forward converters without requiring external Schottky catch diodes.
Can IRFPF30PBF be used in parallel configurations, and what design considerations apply?
Yes, IRFPF30PBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on) and dual-drain lead configuration. To ensure balanced current sharing, use matched gate resistors (≤ 10 Ω), minimize source inductance asymmetry (<1 nH difference), and maintain uniform thermal coupling. The 3.7 Ω RDS(on) tolerance and low LS (13 nH) make IRFPF30PBF well-suited for redundant or high-current parallel arrays.
What is the gate threshold voltage range for IRFPF30PBF, and how does it impact drive circuit design?
The IRFPF30PBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This allows reliable turn-on with standard 10 V gate drivers while avoiding unintended conduction from noise. Designers should ensure gate drive voltage exceeds 4.0 V by ≥2 V margin (i.e., ≥6 V minimum) to guarantee full enhancement across temperature and process variation-essential for stable IRFPF30PBF operation in industrial environments.
IRFPF30PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 900 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3.7Ohm @ 2.2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 78 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 125W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFPF30PBF FAQ
1.How can I place an order for IRFPF30PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFPF30PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFPF30PBF reliable?
The price and inventory of IRFPF30PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPF30PBF is usually 5 days.
3.What payment methods are accepted for IRFPF30PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPF30PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFPF30PBF?
IRFPF30PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFPF30PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFPF30PBF?
For technical support, including IRFPF30PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPF30PBF requirements.
6.How does Aetrix verify that IRFPF30PBF is sourced from the original manufacturer or authorized distributors?
All IRFPF30PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPF30PBF meets industry standards.
7.What is the process for return or replacement of IRFPF30PBF?
All IRFPF30PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPF30PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFPF30PBF part is unused and in its original packaging.
Return procedure for IRFPF30PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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