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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPF50

Name: IRFPF50
Brand: Vishay Siliconix
SKU: IRFPF50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPF50

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPF50.pdf

Description:: MOSFET N-CH 900V 6.7A TO247-3

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Product details

Overview

IRFPF50 from Vishay Siliconix is a 900 V, 6.7 A N-channel power MOSFET in TO-247AC package, featuring 1.6 Ω R_DS(on) at V_GS = 10 V, 200 nC total gate charge, and repetitive avalanche rating up to 6.7 A - designed for high-voltage DC-DC converters, motor drives, and industrial SMPS where ruggedness and fast switching are critical.

For engineers reviewing the IRFPF50 datasheet, IRFPF50 pinout, IRFPF50 application, or IRFPF50 equivalent, this page delivers verified electrical specs, thermal performance data, gate drive requirements, body diode recovery behavior, and real-world substitution guidance - all tied explicitly to the IRFPF50PbF ordering variant.

Technical Context

The IRFPF50 employs a third-generation vertical DMOS structure optimized for high-voltage operation with dynamic dV/dt immunity and unclamped inductive switching (UIS) capability. Its isolated mounting hole and enhanced creepage distances meet commercial-industrial safety standards.

It integrates a fast-recovery body diode (t_rr = 610–920 ns, Q_rr = 3.2–4.8 μC) and exhibits low internal source/drain inductance (L_S = 13 nH, L_D = 5 nH), enabling stable paralleling and reduced switching oscillation in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	900 V - supports primary-side switching in 400 V AC-input offline SMPS and 600 V bus industrial inverters
R_DS(on)	1.6 Ω @ V_GS = 10 V - enables <6.7 A continuous conduction with ≤10 W conduction loss at T_C = 25 °C
Q_g total	200 nC - dictates gate driver current requirement (~1–2 A peak for 100 ns turn-on with 10 V swing)
E_AS	880 mJ - allows single-pulse energy absorption during inductive load turn-off without failure
t_rr / Q_rr	610–920 ns / 3.2–4.8 μC - determines snubber sizing and cross-conduction risk in synchronous rectification
R_thJC	0.65 °C/W - enables 190 W dissipation with ≤124 °C junction rise above 25 °C case temperature
dV/dt rating	1.5 V/ns - ensures immunity to false turn-on in high-dV/dt environments like phase-leg switching

Pinout & Package

IRFPF50 uses the TO-247AC package with an isolated central mounting hole, 3.61 mm diameter screw hole (ØP), and 15.7 mm wide body (E). Thermal pad contour is optional; leads are tin-plated copper with uncontrolled finish in L1 zone.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance input requiring ~200 nC charge for full enhancement; sensitive to ESD; must be driven with low-impedance path
2 (Drain)	Main current output terminal	Connected internally to die backside; electrically tied to metal tab - requires insulated mounting or heatsink isolation
3 (Source)	Reference and return path	Common node for gate drive return and load current return; low-inductance layout critical for switching stability
4 (Drain)	Secondary drain connection	Redundant drain pin for improved current sharing and reduced package inductance; must be connected to same net as Pin 2

Key Features

Feature	Design Value
Dynamic dV/dt rated	Immunity to spurious turn-on at 1.5 V/ns enables reliable operation in bridge-leg configurations without active Miller clamping
Repetitive avalanche rated	Supports 6.7 A I_AR and 19 mJ E_AR under repetitive UIS - simplifies overvoltage protection in flyback and resonant converters
Isolated central mounting hole	Enables direct mechanical attachment to heatsink without electrical shorting - eliminates need for insulating washers in grounded-sink designs
Fast switching with low C_iss/C_oss	2900 pF C_iss and 270 pF C_oss reduce drive power and improve efficiency in 50–200 kHz SMPS applications
Ease of paralleling	Positive R_DS(on) temperature coefficient and matched threshold voltage across units enable current sharing without external ballast resistors

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400–600 V DC bus with PWM frequencies up to 20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during commutation; low Q_g minimizes gate drive losses at high duty cycles.	Use Scenario: Primary switch in isolated forward or active-clamp forward converter for telecom 48 V distribution systems. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 360 V V_DS stress during normal operation. Use Value: 900 V V_DS provides 50 % voltage margin over 600 V transients; fast body diode reduces dead-time losses in synchronous rectified secondaries.
Offline SMPS Power Supplies	Uninterruptible Power Systems (UPS)
Use Scenario: Primary switch in 500–1000 W universal-input (85–265 V AC) flyback or LLC resonant converter. IC Role / Device Role / Timing Role: High-voltage switching transistor subjected to 720 V surge conditions per IEC 61000-4-5. Use Value: 900 V breakdown voltage and 880 mJ single-pulse avalanche energy prevent failure during line surges and startup overloads.	Use Scenario: Inverter-stage switch in double-conversion UPS delivering clean 230 V AC output from 400 V DC battery bank. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–10 kHz H-bridge output stage. Use Value: TO-247AC package handles >150 W dissipation; isolated mounting hole simplifies heatsink integration in compact chassis layouts.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 400–600 V DC bus with PWM frequencies up to 20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during commutation; low Q_g minimizes gate drive losses at high duty cycles.

Use Scenario: Primary switch in isolated forward or active-clamp forward converter for telecom 48 V distribution systems.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with 360 V V_DS stress during normal operation.

Use Value: 900 V V_DS provides 50 % voltage margin over 600 V transients; fast body diode reduces dead-time losses in synchronous rectified secondaries.

Offline SMPS Power Supplies

Uninterruptible Power Systems (UPS)

Use Scenario: Primary switch in 500–1000 W universal-input (85–265 V AC) flyback or LLC resonant converter.

IC Role / Device Role / Timing Role: High-voltage switching transistor subjected to 720 V surge conditions per IEC 61000-4-5.

Use Value: 900 V breakdown voltage and 880 mJ single-pulse avalanche energy prevent failure during line surges and startup overloads.

Use Scenario: Inverter-stage switch in double-conversion UPS delivering clean 230 V AC output from 400 V DC battery bank.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 6–10 kHz H-bridge output stage.

Use Value: TO-247AC package handles >150 W dissipation; isolated mounting hole simplifies heatsink integration in compact chassis layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW9NK90Z	900 V, 8.5 A, R_DS(on) = 1.4 Ω, Q_g = 110 nC, TO-247 long leads	Lower gate charge improves high-frequency efficiency but lower avalanche rating (E_AS = 520 mJ)	Prefer when gate drive power is constrained and avalanche stress is limited; verify layout compatibility with longer lead form factor
IXTH12N90L2	900 V, 12 A, R_DS(on) = 0.95 Ω, Q_g = 160 nC, TO-247 non-isolated mount	Higher current rating and lower on-resistance, but no isolated mounting hole and lower dV/dt immunity (1.2 V/ns)	Choose for higher continuous current needs where heatsink isolation is managed externally; avoid in ultra-high-noise environments

Compared with STW9NK90Z and IXTH12N90L2, the IRFPF50 offers superior ruggedness via its 880 mJ E_AS and 1.5 V/ns dV/dt rating, while maintaining proven field reliability in industrial motor controls - making it preferred where transient robustness outweighs marginal conduction loss reduction.

Availability

IRFPF50 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, offline SMPS power supplies, and uninterruptible power systems requiring stable component supply and long-term manufacturability.

Supply support for IRFPF50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFPF50 belongs to Vishay's third-generation high-voltage Power MOSFET product line, engineered specifically for industrial switching applications demanding avalanche tolerance, thermal stability, and ease of system-level paralleling.

FAQ

What is the maximum continuous drain current rating for IRFPF50 at 100 °C case temperature?

The IRFPF50 has a maximum continuous drain current (I_D) of 4.2 A at T_C = 100 °C, derated linearly from 6.7 A at 25 °C using a 1.5 W/°C factor. This reflects thermal limitations of the TO-247AC package and must be validated against actual heatsink performance and ambient conditions in the target IRFPF50 application.

Does IRFPF50 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFPF50 integrates a fast-recovery body diode with t_rr = 610–920 ns and Q_rr = 3.2–4.8 μC at T_J = 25 °C, I_F = 6.7 A, and dI/dt = 100 A/μs. These values directly impact snubber design and shoot-through risk in synchronous rectifier or half-bridge configurations using IRFPF50.

What is the gate-source threshold voltage range for IRFPF50, and how does it affect drive circuit design?

The IRFPF50 has a V_GS(th) range of 2.0 V to 4.0 V at I_D = 250 μA. This wide threshold necessitates gate drive voltages ≥10 V to ensure full enhancement and consistent R_DS(on); logic-level drivers are unsuitable. Drive circuits for IRFPF50 must deliver sufficient voltage margin to accommodate PCB trace drops and noise.

Can IRFPF50 be used in parallel configurations, and what design considerations apply?

Yes, IRFPF50 is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient and matched V_GS(th) across units. Successful implementation requires symmetrical PCB layout, individual gate resistors (≤10 Ω), and Kelvin-source connections to minimize current imbalance - all validated in actual IRFPF50 multi-device designs.

What is the thermal resistance from junction to case (R_thJC) for IRFPF50, and how is it used in thermal design?

The IRFPF50 has a maximum R_thJC of 0.65 °C/W, measured from junction to the drain-connected metal tab. This value is used with heatsink thermal resistance and ambient temperature to calculate worst-case junction temperature: T_J = T_A + P_D × (R_thJA) or T_J = T_C + P_D × (R_thJC). Accurate IRFPF50 thermal modeling requires including interface material resistance between tab and heatsink.

IRFPF50 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6Ohm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPF50 FAQ

1.How can I place an order for IRFPF50 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPF50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPF50 reliable?

The price and inventory of IRFPF50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPF50 is usually 5 days.

3.What payment methods are accepted for IRFPF50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPF50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPF50?

IRFPF50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPF50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPF50?

For technical support, including IRFPF50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPF50 requirements.

6.How does Aetrix verify that IRFPF50 is sourced from the original manufacturer or authorized distributors?

All IRFPF50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPF50 meets industry standards.

7.What is the process for return or replacement of IRFPF50?

All IRFPF50 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPF50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPF50 part is unused and in its original packaging.

Return procedure for IRFPF50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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