Vishay Siliconix IRFPG30

Overview

IRFPG30 from Vishay Siliconix is a 1000 V, 3.1 A N-channel power MOSFET in TO-247AC package, featuring 5.0 Ω R_DS(on) at V_GS = 10 V, 80 nC total gate charge, and repetitive avalanche rating up to 3.1 A - designed for high-voltage DC-DC converters, snubber circuits, and industrial motor control.

For engineers reviewing the IRFPG30 datasheet, IRFPG30 pinout, IRFPG30 application, or IRFPG30 equivalent, key selection criteria include its 1000 V blocking capability, isolated mounting hole for enhanced creepage, dynamic dV/dt rating of 1.0 V/ns, and fast switching performance with 12 ns turn-on delay and 29 ns fall time.

Technical Context

This device implements a third-generation planar vertical DMOS structure optimized for ruggedness and high-voltage operation. Its design integrates a low-inductance internal layout (L_D = 5.0 nH, L_S = 13 nH) and an integral body diode with 410–620 ns reverse recovery time and 1.3–2.0 μC Q_rr, enabling reliable unclamped inductive switching.

The IRFPG30 operates with gate threshold voltage between 2.0 V and 4.0 V and supports ±20 V gate-source voltage. It delivers stable on-resistance over temperature (ΔR_DS(on)/T_J confirmed via normalized curves), and its thermal resistance R_thJC is rated at 1.0 °C/W, supporting 125 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

IRFPG30 uses the TO-247AC package with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. The package provides ≥5.5 mm creepage between drain and source pins and accommodates M3/6-32 screws for mechanical stability and thermal interface optimization.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STW12NK100Z and IXTH1N100D2, the IRFPG30 offers balanced trade-offs: moderate R_DS(on) and Q_g, proven 180 mJ single-pulse avalanche capability, and TO-247AC's isolated mounting - making it optimal for mid-power, high-reliability industrial switching where thermal management and transient robustness are prioritized over raw current density.

Availability

IRFPG30 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, snubber circuits, and AC phase control requiring stable component supply across multi-year production cycles.

Supply support for IRFPG30 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFPG30 belongs to Vishay's third-generation high-voltage Power MOSFET family, engineered specifically for industrial power conversion systems demanding high dV/dt immunity, repetitive avalanche capability, and thermally robust packaging.

FAQ

What is the maximum continuous drain current for IRFPG30 at 100 °C case temperature?

The IRFPG30 supports a continuous drain current of 2.0 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 1.0 °C/W) and must be applied with appropriate heatsinking. At T_C = 25 °C, the rating increases to 3.1 A. Designers should verify actual junction temperature using measured case temperature and power dissipation in their layout before finalizing thermal design for IRFPG30.

Does IRFPG30 have a built-in body diode, and what are its key parameters?

Yes, the IRFPG30 integrates a monolithic body diode with typical forward voltage V_SD = 1.8 V at I_S = 3.1 A and T_J = 25 °C. Its reverse recovery time t_rr ranges from 410 ns to 620 ns, and reverse recovery charge Q_rr is 1.3–2.0 μC under standard test conditions (I_F = 3.1 A, dI/dt = 100 A/μs). These values are critical for snubberless inductive switching and synchronous rectification analysis in IRFPG30-based designs.

What is the significance of the isolated mounting hole in the TO-247AC package used by IRFPG30?

The isolated central mounting hole in the TO-247AC package allows direct mechanical attachment to a heatsink without creating an electrical short to the drain terminal. In IRFPG30, this feature enables safe thermal management in high-voltage applications where the drain operates at potentials up to 1000 V. It also increases creepage distance between pins, helping meet safety standards such as UL and IEC 60950 for industrial equipment - a key differentiator versus non-isolated TO-218 variants.

Can IRFPG30 be used in avalanche mode, and what are the limits?

Yes, IRFPG30 is explicitly rated for repetitive avalanche operation: I_AR = 3.1 A and E_AR = 13 mJ per pulse, with pulse width limited by junction temperature. Single-pulse avalanche energy E_AS is rated at 180 mJ. These ratings assume proper gate bias (V_GS ≥ 10 V), controlled dI/dt (<80 A/μs), and V_DD ≤ 600 V per datasheet note c. Operation beyond these boundaries risks parametric shift or failure; therefore, avalanche use in IRFPG30 must be validated per application-specific stress profiles.

What gate drive voltage is required to fully enhance IRFPG30, and how does V_GS(th) affect system design?

The IRFPG30 has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V, meaning it begins conducting significantly above ~2.5 V. However, full enhancement - achieving the specified R_DS(on) = 5.0 Ω - requires V_GS = 10 V. Using lower gate voltages (e.g., 5 V) results in substantially higher on-resistance and conduction losses. Therefore, IRFPG30 should be driven with a minimum 10 V gate-source voltage, and gate drivers must sustain ±20 V absolute maximum rating to avoid damage during transients.