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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPG40

Name: IRFPG40
Brand: Vishay Siliconix
SKU: IRFPG40
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPG40

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPG40.pdf

Description:: MOSFET N-CH 1000V 4.3A TO247-3

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Product details

Overview

IRFPG40 from Vishay Siliconix is a 1000 V, 4.3 A N-channel power MOSFET in TO-247AC package, featuring 3.5 Ω R_DS(on) at V_GS = 10 V, 120 nC total gate charge, and repetitive avalanche rating up to 4.3 A - designed for high-voltage DC-DC converters, snubber circuits, and industrial motor control.

For engineers reviewing the IRFPG40 datasheet, IRFPG40 pinout, IRFPG40 application, or IRFPG40 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_thJC = 0.83 °C/W), body diode recovery characteristics (t_rr = 470–710 ns), and safe operating area (SOA) limits critical for high-reliability 600–1000 V switching designs.

Technical Context

The IRFPG40 employs a third-generation planar vertical DMOS structure optimized for rugged unclamped inductive switching, with dynamic dV/dt rating of 1.0 V/ns and peak diode recovery dV/dt capability confirmed under controlled test conditions. Its isolated central mounting hole and enhanced creepage distance meet commercial-industrial safety requirements.

Thermal design is enabled by low junction-to-case resistance (0.83 °C/W) and case-to-sink thermal resistance of 0.24 °C/W on greased flat surface. The device supports linear derating from 150 W at 25 °C to zero at 162.5 °C, with maximum junction temperature rated at +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1000 V - supports primary-side switching in offline SMPS up to 800 V DC bus with margin
R_DS(on)	3.5 Ω @ V_GS = 10 V - determines conduction loss in high-voltage, low-current applications
Q_g	120 nC - defines gate drive energy requirement and switching speed trade-off at 400 V V_DS
E_AS	490 mJ - enables robust single-pulse avalanche operation without external clamping
t_rr	470–710 ns - quantifies body diode reverse recovery time affecting cross-conduction losses
R_thJC	0.83 °C/W - allows direct heatsink thermal modeling for 150 W continuous dissipation
I_D (T_C = 100 °C)	2.7 A - specifies usable current under real-world heatsink-limited thermal conditions

Pinout & Package

IRFPG40 uses the TO-247AC package - a high-voltage variant of JEDEC TO-247 with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. Thermal pad contour is optional; lead finish is uncontrolled per L1 specification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives 10 V logic-level drive; ±20 V absolute max rating prevents gate oxide damage
2 (Drain)	High-side power terminal	Connected to 1000 V DC bus; electrically tied to metal tab for thermal path
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; carries full load current and body diode conduction
4 (Drain)	Secondary drain connection	Redundant drain terminal for improved current sharing and reduced package inductance (L_D = 5.0 nH)

Key Features

Feature	Design Value
Dynamic dV/dt rated	1.0 V/ns - suppresses false turn-on during high dv/dt transients in hard-switched topologies
Repetitive avalanche rated	4.3 A I_AR, 15 mJ E_AR - enables reliable operation under inductive fault conditions without derating
Isolated central mounting hole	3.61 mm Ø P - allows mechanical grounding independent of electrical drain potential for safety-critical isolation
Fast switching	t_d(on) = 15 ns, t_f = 30 ns - reduces switching losses in 50–100 kHz SMPS designs
Ease of paralleling	Positive R_DS(on) temperature coefficient - ensures current sharing stability across multiple devices

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Half-bridge switching in 400–800 V industrial servo drives with regenerative braking. IC Role / Device Role / Timing Role: High-side N-channel switch handling 1000 V blocking and 4.3 A continuous conduction. Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid deceleration without external snubbers.	Use Scenario: Primary-side switch in isolated flyback or forward converters for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 1000 V V_DS rating. Use Value: Low Q_gd/Q_g ratio (65/120 nC) improves Miller immunity and reduces gate drive losses.
Snubber Circuits	Capacitor Discharge Units
Use Scenario: Active clamp snubber in phase-shifted full-bridge inverters for solar microinverters. IC Role / Device Role / Timing Role: Clamping switch absorbing leakage inductance energy during ZVS transitions. Use Value: 490 mJ single-pulse avalanche energy handles transient overvoltage spikes beyond 1000 V.	Use Scenario: High-energy discharge switch in pulsed laser drivers and defibrillator capacitor banks. IC Role / Device Role / Timing Role: High-voltage, low-duty-cycle switch releasing stored energy into load. Use Value: 17 A pulsed drain current (I_DM) and 150 W P_D support short-duration, high-peak-power bursts.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Half-bridge switching in 400–800 V industrial servo drives with regenerative braking.

IC Role / Device Role / Timing Role: High-side N-channel switch handling 1000 V blocking and 4.3 A continuous conduction.

Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid deceleration without external snubbers.

Use Scenario: Primary-side switch in isolated flyback or forward converters for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with 1000 V V_DS rating.

Use Value: Low Q_gd/Q_g ratio (65/120 nC) improves Miller immunity and reduces gate drive losses.

Snubber Circuits

Capacitor Discharge Units

Use Scenario: Active clamp snubber in phase-shifted full-bridge inverters for solar microinverters.

IC Role / Device Role / Timing Role: Clamping switch absorbing leakage inductance energy during ZVS transitions.

Use Value: 490 mJ single-pulse avalanche energy handles transient overvoltage spikes beyond 1000 V.

Use Scenario: High-energy discharge switch in pulsed laser drivers and defibrillator capacitor banks.

IC Role / Device Role / Timing Role: High-voltage, low-duty-cycle switch releasing stored energy into load.

Use Value: 17 A pulsed drain current (I_DM) and 150 W P_D support short-duration, high-peak-power bursts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12NK100Z	1000 V, 12 A, R_DS(on) = 1.2 Ω, Q_g = 110 nC, TO-247 package	Higher current rating but lower voltage margin (1000 V same); faster switching due to lower Q_gd	Select when higher continuous current (>4.3 A) and lower conduction loss are required at cost of larger die size
IXTH12N100L	1000 V, 12 A, R_DS(on) = 1.1 Ω, Q_g = 140 nC, TO-247 package	Enhanced avalanche ruggedness (E_AS = 1100 mJ), higher gate charge increases drive complexity	Prefer for ultra-rugged applications requiring >2× avalanche energy margin at expense of switching efficiency

Compared with STW12NK100Z and IXTH12N100L, the IRFPG40 offers a balanced trade-off of moderate current (4.3 A), proven 1000 V blocking, and industry-standard 120 nC gate charge - making it optimal for space-constrained, thermally managed designs where precise SOA control and repeatable avalanche behavior are prioritized over raw current density.

Availability

IRFPG40 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, snubber circuits, and capacitor discharge units requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFPG40 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with manufacturing across Asia and the Americas.

The IRFPG40 belongs to Vishay's third-generation high-voltage Power MOSFET family, engineered specifically for ruggedized switching in industrial, telecom, and medical power systems demanding 1000 V capability and repeatable avalanche performance.

FAQ

What is the maximum continuous drain current for IRFPG40 at 100 °C case temperature?

The IRFPG40 supports 2.7 A continuous drain current at T_C = 100 °C, derived from its 150 W maximum power dissipation and thermal derating factor of 1.2 W/°C above 25 °C. This value reflects real-world thermal constraints when mounted on a heatsink with typical interface resistance, and must be validated against actual board-level thermal measurements in the target application.

Does IRFPG40 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFPG40 integrates a monolithic p-n junction body diode with 4.3 A continuous forward current rating. Its reverse recovery time (t_rr) is 470–710 ns at T_J = 25 °C, I_F = 4.3 A, and dI/dt = 100 A/μs, and reverse recovery charge (Q_rr) is 1.9–2.9 μC - critical parameters for minimizing shoot-through losses in synchronous rectification or half-bridge configurations.

What is the gate threshold voltage range for IRFPG40, and how does it affect drive circuit design?

The IRFPG40 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C and I_D = 250 μA. This wide range necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variation, and confirms compatibility with standard 12 V logic-level drivers while excluding 5 V-only controllers.

Can IRFPG40 be used in avalanche mode, and what are the rated limits?

Yes, the IRFPG40 is explicitly rated for repetitive avalanche operation: I_AR = 4.3 A and E_AR = 15 mJ per pulse, with single-pulse avalanche energy rated at 490 mJ. These values are measured under defined test conditions (V_DD = 50 V, L = 50 mH, R_g = 25 Ω) and require strict thermal management to avoid junction overheating during sustained avalanche events.

What is the thermal resistance from junction to case (R_thJC) for IRFPG40, and how is it measured?

The IRFPG40 has a maximum junction-to-case thermal resistance (R_thJC) of 0.83 °C/W, measured from the silicon die to the metal tab (drain-connected surface) under standardized cold-plate conditions. This parameter enables accurate heatsink sizing when the device is mounted with thermal grease on a flat, conductive surface - and is distinct from junction-to-ambient (R_thJA ≤ 40 °C/W), which includes PCB and airflow effects.

IRFPG40 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5Ohm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPG40 FAQ

1.How can I place an order for IRFPG40 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPG40 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPG40 reliable?

The price and inventory of IRFPG40 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPG40 is usually 5 days.

3.What payment methods are accepted for IRFPG40?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPG40 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPG40?

IRFPG40 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPG40 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPG40?

For technical support, including IRFPG40 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPG40 requirements.

6.How does Aetrix verify that IRFPG40 is sourced from the original manufacturer or authorized distributors?

All IRFPG40 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPG40 meets industry standards.

7.What is the process for return or replacement of IRFPG40?

All IRFPG40 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPG40, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPG40 part is unused and in its original packaging.

Return procedure for IRFPG40:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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