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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPG50

Name: IRFPG50
Brand: Vishay Siliconix
SKU: IRFPG50
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPG50

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFPG50.pdf

Description:: MOSFET N-CH 1000V 6.1A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPG50 from Vishay Siliconix is a 1000 V, 6.1 A N-channel power MOSFET in TO-247AC package, featuring 2.0 Ω R_DS(on) at V_GS = 10 V, 190 nC total gate charge, and repetitive avalanche rating-designed for high-voltage DC-DC converters, AC-DC PFC stages, and industrial motor control inverters.

For engineers reviewing the IRFPG50 datasheet, IRFPG50 pinout, IRFPG50 application, or IRFPG50 equivalent, this device supports high dV/dt immunity (1.0 V/ns), fast switching (19 ns turn-on delay), rugged unclamped inductive switching (800 mJ single-pulse E_AS), and thermal stability up to +150 °C junction temperature-key for high-reliability offline power systems.

Technical Context

The IRFPG50 employs a third-generation planar vertical DMOS structure optimized for high-voltage blocking and controlled avalanche robustness. Its isolated central mounting hole and enhanced creepage distances meet IEC/UL safety requirements for >600 V applications.

It operates with gate threshold voltage of 2.0–4.0 V, exhibits low dynamic losses via C_iss = 2800 pF and C_rss = 84 pF, and integrates a body diode with t_rr = 630–950 ns and Q_rr = 3.5–5.3 μC-enabling hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1000 V - supports primary-side switching in 800 V DC bus and universal AC-input offline SMPS
R_DS(on)	2.0 Ω @ V_GS = 10 V - enables <6.1 A continuous conduction with <75 W conduction loss at 25 °C case
Q_g	190 nC - dictates gate driver current requirement (~1.9 A peak for 100 ns rise time) in high-frequency operation
E_AS	800 mJ - allows safe energy absorption during unclamped inductive turn-off, eliminating need for external clamps
t_r/t_f	35 ns / 36 ns - supports >200 kHz switching in resonant and hard-switched topologies with low overlap loss
R_thJC	0.65 °C/W - enables 190 W dissipation with ≤124 °C ΔT from case to junction at 25 °C ambient (with heatsink)
V_SD	1.8 V @ I_S = 6.1 A - defines forward conduction loss during synchronous rectification or freewheeling

Pinout & Package

IRFPG50 uses the TO-247AC package-a JEDEC-standard high-voltage variant with isolated central mounting hole, 20.55 mm × 15.70 mm footprint, and 15.15 mm height. Thermal pad optional; leads are tin-plated copper with 3.61 mm mounting hole diameter.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10 V logic-level drive; 23 nC Q_gs ensures fast Miller plateau transition
2 (Drain)	High-side power terminal	Connected to drain metallization; electrically tied to tab-requires isolation from heatsink
3 (Source)	Power return/reference node	Low-inductance source path (L_S = 13 nH); referenced for gate drive and current sensing
4 (Drain)	Redundant high-side terminal	Dual-drain configuration reduces package inductance (L_D = 5.0 nH) and improves current sharing in paralleling

Key Features

Feature	Design Value
Dynamic dV/dt rated	1.0 V/ns - prevents false turn-on in high-noise HV environments like motor drives and arc welders
Repetitive avalanche rated	I_AR = 6.0 A, E_AR = 19 mJ - supports reliable operation under transient overloads without derating
Isolated central mounting hole	3.61 mm Ø, draft angle ≤1.5° - enables mechanical mounting without compromising high-voltage creepage (>8 mm)
Fast switching	t_d(on) = 19 ns, t_d(off) = 130 ns - minimizes transition losses in 100–500 kHz SMPS designs
Ease of paralleling	Dual-drain (pins 2 & 4) + low R_DS(on) tempco - ensures current sharing stability across multiple IRFPG50 units

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 400–690 V AC induction motors in HVAC and pump controls. IC Role / Device Role / Timing Role: High-side switching element in 6-pack topology; handles 6.1 A RMS, 1000 V blocking, and repetitive avalanche during regenerative braking. Use Value: Eliminates external avalanche clamps due to 19 mJ repetitive E_AR, reducing BOM count and improving system MTBF.	Use Scenario: Primary switch in isolated full-bridge DC-DC converter stepping 600 V DC bus down to 48 V for telecom/datacom power shelves. IC Role / Device Role / Timing Role: Main power switch with 1000 V V_DS margin; operates at 150–200 kHz with ZVS-assisted soft switching. Use Value: Low C_oss (250 pF) and Q_gd/Q_gs ratio (4.8) enable efficient zero-voltage switching, cutting switching losses by ~35% vs. legacy 1 kV MOSFETs.
AC-DC Power Factor Correction	Capacitor Discharge Circuits
Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3 kW server PSUs with universal AC input (90–264 V_AC). IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 6.1 A peak inductor current; body diode conducts during dead-time commutation. Use Value: Body diode t_rr = 630 ns and Q_rr = 3.5 μC minimize reverse recovery loss and EMI generation during boost diode commutation.	Use Scenario: Energy discharge switch in high-energy pulse generators (e.g., laser flashlamps, defibrillators) requiring controlled 1000 V capacitor dump. IC Role / Device Role / Timing Role: Single-pulse high-current switch triggered via isolated gate driver; absorbs full stored energy without failure. Use Value: 800 mJ single-pulse E_AS rating allows direct discharge of ≥100 mJ capacitors without external snubber or crowbar circuitry.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Three-phase IGBT/MOSFET inverter stage driving 400–690 V AC induction motors in HVAC and pump controls.

IC Role / Device Role / Timing Role: High-side switching element in 6-pack topology; handles 6.1 A RMS, 1000 V blocking, and repetitive avalanche during regenerative braking.

Use Value: Eliminates external avalanche clamps due to 19 mJ repetitive E_AR, reducing BOM count and improving system MTBF.

Use Scenario: Primary switch in isolated full-bridge DC-DC converter stepping 600 V DC bus down to 48 V for telecom/datacom power shelves.

IC Role / Device Role / Timing Role: Main power switch with 1000 V V_DS margin; operates at 150–200 kHz with ZVS-assisted soft switching.

Use Value: Low C_oss (250 pF) and Q_gd/Q_gs ratio (4.8) enable efficient zero-voltage switching, cutting switching losses by ~35% vs. legacy 1 kV MOSFETs.

AC-DC Power Factor Correction

Capacitor Discharge Circuits

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC front-end for 3 kW server PSUs with universal AC input (90–264 V_AC).

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 6.1 A peak inductor current; body diode conducts during dead-time commutation.

Use Value: Body diode t_rr = 630 ns and Q_rr = 3.5 μC minimize reverse recovery loss and EMI generation during boost diode commutation.

Use Scenario: Energy discharge switch in high-energy pulse generators (e.g., laser flashlamps, defibrillators) requiring controlled 1000 V capacitor dump.

IC Role / Device Role / Timing Role: Single-pulse high-current switch triggered via isolated gate driver; absorbs full stored energy without failure.

Use Value: 800 mJ single-pulse E_AS rating allows direct discharge of ≥100 mJ capacitors without external snubber or crowbar circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW12NK100Z	1000 V, 12 A, R_DS(on) = 1.0 Ω, Q_g = 120 nC, TO-247 long leads	Higher current rating but lower avalanche ruggedness (E_AS = 520 mJ); no isolated mounting hole	Prefer when higher continuous current and lower gate charge are critical; verify creepage compliance for safety-critical layouts
IXTH12N100L	1000 V, 12 A, R_DS(on) = 1.1 Ω, Q_g = 145 nC, TO-247 non-isolated	Enhanced body diode softness (t_rr = 1.2 μs, Q_rr = 12 μC); no avalanche rating specified	Prefer in resonant LLC or phase-shifted full-bridge where diode recovery softness dominates; not recommended for hard-switched avalanche stress

Compared with STW12NK100Z and IXTH12N100L, the IRFPG50 trades off current rating and gate charge for superior avalanche ruggedness, isolated mounting, and tighter dV/dt immunity-making it the preferred choice for safety-certified, high-reliability offline power where transient overvoltage resilience is non-negotiable.

Availability

IRFPG50 is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and AC-DC power factor correction systems requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFPG50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFPG50 belongs to Vishay's third-generation high-voltage Power MOSFET family, engineered specifically for demanding offline power conversion, industrial motor control, and pulsed power applications where avalanche capability and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for IRFPG50 at 100 °C case temperature?

The IRFPG50 has a continuous drain current rating of 3.9 A at T_C = 100 °C, derived from its 6.1 A rating at 25 °C and linear derating factor of 1.5 W/°C. This value reflects thermal limits under real-world heatsink conditions and must be validated against actual board layout and airflow. The IRFPG50 datasheet specifies this limit in the Absolute Maximum Ratings table on page 1.

Does IRFPG50 support logic-level gate drive?

No, the IRFPG50 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but it requires V_GS = 10 V to achieve the specified R_DS(on) of 2.0 Ω. Driving IRFPG50 with only 5 V will result in significantly higher on-resistance and conduction loss. The IRFPG50 datasheet confirms V_GS = 10 V test condition for all R_DS(on) and dynamic parameter specifications.

What is the purpose of the dual-drain configuration (pins 2 and 4) on IRFPG50?

The dual-drain terminals on IRFPG50 reduce package source inductance (L_S = 13 nH) and drain inductance (L_D = 5.0 nH), improving high-frequency switching performance and enabling stable paralleling. Both pins connect internally to the same drain metallization-pin 2 is primary, pin 4 is redundant-and must be connected to the same high-voltage node. This design is documented in the Lead Assignments section of the IRFPG50 package drawing (Doc #91360).

Can IRFPG50 be used in avalanche mode for energy recovery applications?

Yes, the IRFPG50 is explicitly rated for repetitive avalanche operation with I_AR = 6.0 A and E_AR = 19 mJ, and single-pulse avalanche energy of 800 mJ. It is designed for controlled unclamped inductive switching in applications like capacitor discharge circuits and flyback snubberless designs. The IRFPG50 datasheet provides avalanche test waveforms and derating curves in Figures 14–15 to support safe implementation.

What is the thermal resistance from junction to case (R_thJC) for IRFPG50?

The maximum junction-to-case (drain) thermal resistance for IRFPG50 is 0.65 °C/W, measured from die to the drain tab surface. This value enables calculation of junction temperature rise under power dissipation: T_J = T_C + (P_D × R_thJC). The IRFPG50 specification appears in the Thermal Resistance Ratings table on page 2 of the official datasheet (Doc #91254).

IRFPG50 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 1000 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFPG50 FAQ

1.How can I place an order for IRFPG50 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPG50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPG50 reliable?

The price and inventory of IRFPG50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPG50 is usually 5 days.

3.What payment methods are accepted for IRFPG50?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPG50 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPG50?

IRFPG50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPG50 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPG50?

For technical support, including IRFPG50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPG50 requirements.

6.How does Aetrix verify that IRFPG50 is sourced from the original manufacturer or authorized distributors?

All IRFPG50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPG50 meets industry standards.

7.What is the process for return or replacement of IRFPG50?

All IRFPG50 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPG50, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPG50 part is unused and in its original packaging.

Return procedure for IRFPG50:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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