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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS29N60LPBF

Name: IRFPS29N60LPBF
Brand: Vishay Siliconix
SKU: IRFPS29N60LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS29N60LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS29N60LPBF.pdf

Description:: MOSFET N-CH 600V 29A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS29N60LPBF from Vishay Siliconix is a 600 V, 29 A N-channel superjunction power MOSFET in SUPER-247™ package, featuring 0.175 Ω R_DS(on) at V_GS = 10 V, 220 nC total gate charge, and optimized body diode for zero-voltage switching (ZVS) in high-efficiency telecom and server SMPS.

For engineers reviewing the IRFPS29N60LPBF datasheet, IRFPS29N60LPBF pinout, IRFPS29N60LPBF application, or IRFPS29N60LPBF equivalent, key selection criteria include avalanche ruggedness (570 mJ E_AS), dV/dt immunity (15 V/ns), gate threshold voltage (3.0–5.0 V), and thermal resistance (0.26 °C/W R_thJC) for high-power hard-switching and resonant topologies.

Technical Context

This device employs superjunction architecture to achieve high voltage blocking with low on-resistance, enabling efficient operation in continuous conduction mode (CCM) and transition-mode (TM) PFC stages. Its enhanced dV/dt capability and fast, soft-recovery body diode support reliable ZVS in phase-shifted full-bridge and LLC resonant converters.

The MOSFET features a 3.0–5.0 V gate threshold voltage for improved noise immunity in noisy industrial environments, and its 220 nC gate charge enables drive with standard gate drivers while maintaining switching losses below 1.2 W at 100 kHz in 480 V bus applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified to 560 V DC bus with 10 % margin for transient overvoltage
R_DS(on)	0.175 Ω max at V_GS = 10 V - delivers ≤14.5 W conduction loss at 29 A continuous drain current
Q_g	220 nC max - determines gate driver peak current requirement (~2.2 A for 100 ns rise time)
E_AS	570 mJ - withstands unclamped inductive energy during hard commutation without failure
R_thJC	0.26 °C/W - enables 480 W power dissipation with ≤125 °C junction rise above 25 °C case temperature
dV/dt	15 V/ns - prevents spurious turn-on during high-speed switching in high-di/dt circuits
V_GS(th)	3.0–5.0 V - ensures stable turn-on under EMI and supply ripple in industrial control environments

Pinout & Package

The IRFPS29N60LPBF is housed in the SUPER-247™ package - a through-hole, isolated-tab variant of TO-247 with enhanced thermal performance and creepage/clearance for 600 V systems. The tab is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control electrode; requires ≥10 V drive for full enhancement; 0.86 Ω internal gate resistance limits ringing
D	Drain	Main high-side power terminal; connected to heat sink via isolated tab; carries full load current and avalanche energy
S	Source	Power return path and gate reference; low-inductance layout critical for switching stability and dV/dt immunity

Key Features

Feature	Design Value
Super-fast body diode	trr = 130 ns (TJ = 25 °C), Qrr = 630 µC - eliminates external anti-parallel diode in ZVS flyback and LLC half-bridge
High gate threshold voltage	VGS(th) = 3.0–5.0 V - reduces false triggering from noise coupling in high-density power modules
Low effective output capacitance	Coss eff. = 250 pF - minimizes dead-time losses and improves light-load efficiency in resonant converters
Enhanced avalanche ruggedness	EAS = 570 mJ - supports robust operation in unclamped inductive switching without derating
RoHS-compliant lead-free termination	Pb-free plating per JEDEC J-STD-609 - meets global environmental compliance without sacrificing solderability or thermal cycling reliability

Applications

Telecom Rectifier Modules	Server PSU Primary Switch
Use Scenario: 3 kW front-end rectifier converting 200–240 V AC to 380 V DC bus using totem-pole PFC with ZVS. IC Role / Device Role / Timing Role: High-side switching element in interleaved totem-pole bridge leg; operates at 70–100 kHz with soft switching. Use Value: Low Qg and fast body diode enable >98.5 % efficiency at full load; 0.175 Ω RDS(on) limits conduction loss to <12 W per device.	Use Scenario: Primary-side switch in 1.5 kW LLC resonant DC-DC converter powering 12 V/100 A server rails. IC Role / Device Role / Timing Role: Half-bridge switch operating in ZVS region; handles 480 V DC bus with 29 A peak current. Use Value: 570 mJ EAS rating ensures reliability during startup surge and fault recovery; Coss eff. = 250 pF enables precise resonant tuning.
Industrial UPS Inverter Stage	Motor Drive Half-Bridge
Use Scenario: Output inverter stage in 5 kVA online UPS delivering clean 230 V AC from 400 V DC bus. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter leg; driven at 8–16 kHz with active clamping. Use Value: 15 V/ns dV/dt rating prevents false turn-on during bus transients; RthJC = 0.26 °C/W allows direct heatsink mounting without thermal interface pads.	Use Scenario: 3 kW servo drive half-bridge controlling permanent magnet motor with field-oriented control. IC Role / Device Role / Timing Role: High-side switch in 20 kHz PWM inverter; conducts 29 A RMS with 110 A pulsed peak current. Use Value: ISM = 110 A and TJ = 150 °C rating support short-circuit withstand for 10 µs; VSD = 1.5 V ensures low reverse conduction loss during freewheeling.

Telecom Rectifier Modules

Server PSU Primary Switch

Use Scenario: 3 kW front-end rectifier converting 200–240 V AC to 380 V DC bus using totem-pole PFC with ZVS.

IC Role / Device Role / Timing Role: High-side switching element in interleaved totem-pole bridge leg; operates at 70–100 kHz with soft switching.

Use Value: Low Qg and fast body diode enable >98.5 % efficiency at full load; 0.175 Ω RDS(on) limits conduction loss to <12 W per device.

Use Scenario: Primary-side switch in 1.5 kW LLC resonant DC-DC converter powering 12 V/100 A server rails.

IC Role / Device Role / Timing Role: Half-bridge switch operating in ZVS region; handles 480 V DC bus with 29 A peak current.

Use Value: 570 mJ EAS rating ensures reliability during startup surge and fault recovery; Coss eff. = 250 pF enables precise resonant tuning.

Industrial UPS Inverter Stage

Motor Drive Half-Bridge

Use Scenario: Output inverter stage in 5 kVA online UPS delivering clean 230 V AC from 400 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter leg; driven at 8–16 kHz with active clamping.

Use Value: 15 V/ns dV/dt rating prevents false turn-on during bus transients; RthJC = 0.26 °C/W allows direct heatsink mounting without thermal interface pads.

Use Scenario: 3 kW servo drive half-bridge controlling permanent magnet motor with field-oriented control.

IC Role / Device Role / Timing Role: High-side switch in 20 kHz PWM inverter; conducts 29 A RMS with 110 A pulsed peak current.

Use Value: ISM = 110 A and TJ = 150 °C rating support short-circuit withstand for 10 µs; VSD = 1.5 V ensures low reverse conduction loss during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	RDS(on) = 0.15 Ω (lower), Qg = 170 nC (lower), but EAS = 420 mJ (lower); TO-247 package	Better efficiency at light loads due to lower Qg, but reduced avalanche margin in unclamped inductive faults	Prefer when gate drive capability is limited and system-level fault protection is robust
IXFH32N60P	RDS(on) = 0.18 Ω (slightly higher), Qg = 240 nC (higher), EAS = 620 mJ (higher); TO-247 package	Higher avalanche energy supports harsher industrial transients, but requires stronger gate driver	Prefer when system must survive repeated unclamped inductive switching without snubbers

Compared with STW62N60M2 and IXFH32N60P, the IRFPS29N60LPBF offers balanced trade-offs: mid-range R_DS(on) and Q_g, industry-leading dV/dt immunity (15 V/ns), and verified ZVS diode performance-making it optimal for telecom/server SMPS where reliability and soft switching coexist.

Availability

IRFPS29N60LPBF is available at Aetrix Electronics and suitable for telecom rectifiers, server power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFPS29N60LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFPS29N60LPBF belongs to Vishay's "Super Junction" power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating at 600 V class with demanding ZVS and avalanche requirements.

FAQ

What is the maximum continuous drain current rating for the IRFPS29N60LPBF at 100 °C case temperature?

The IRFPS29N60LPBF has a maximum continuous drain current of 18 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations at elevated temperatures and ensures safe operation within the SOA boundary defined in Figure 9 of the datasheet. Designers must verify heatsink design to maintain T_C ≤ 100 °C under full-load conditions to sustain this current level in the IRFPS29N60LPBF.

Does the IRFPS29N60LPBF have a fully rated avalanche capability, and what is its single-pulse energy limit?

Yes, the IRFPS29N60LPBF is fully rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 570 mJ under test conditions of L = 1.5 mH, I_AS = 29 A, and starting T_J = 25 °C. This value is confirmed in the Absolute Maximum Ratings table and validated in Figure 14a, making the IRFPS29N60LPBF suitable for designs where unclamped inductive switching may occur.

What is the typical reverse recovery time (trr) of the body diode in the IRFPS29N60LPBF, and how does it vary with temperature?

The body diode reverse recovery time (t_rr) of the IRFPS29N60LPBF is 130 ns at T_J = 25 °C and increases to 240 ns at T_J = 125 °C, as specified in the Drain-Source Body Diode Characteristics table. This temperature-dependent behavior is critical for ZVS timing margin calculations in resonant converters, and the IRFPS29N60LPBF's soft recovery profile minimizes voltage overshoot and EMI generation during commutation.

Can the IRFPS29N60LPBF be used as a direct replacement for the IRFP29N60KPBF in existing designs?

No-the IRFPS29N60LPBF is not a direct replacement for the IRFP29N60KPBF. While both are 600 V, 29 A N-channel MOSFETs, the IRFPS29N60LPBF features a superjunction structure with lower R_DS(on) (0.175 Ω vs. 0.21 Ω), higher Q_g (220 nC vs. ~160 nC), and optimized body diode for ZVS. Layout and gate drive adjustments may be required, and the IRFPS29N60LPBF should be validated for each specific application before substitution.

What is the thermal resistance from junction to case (RthJC) for the IRFPS29N60LPBF, and how is it measured?

The maximum junction-to-case thermal resistance (R_thJC) of the IRFPS29N60LPBF is 0.26 °C/W, measured from the die junction to the drain tab surface under steady-state conditions, as stated in the Thermal Resistance Ratings table. This value is derived from standardized test methods per JEDEC JESD51-14 and assumes proper mounting with thermal grease on a flat, greased heatsink surface-critical for accurate thermal modeling of the IRFPS29N60LPBF in high-power applications.

IRFPS29N60LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 29A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 210mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 480W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS29N60LPBF FAQ

1.How can I place an order for IRFPS29N60LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS29N60LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS29N60LPBF reliable?

The price and inventory of IRFPS29N60LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS29N60LPBF is usually 5 days.

3.What payment methods are accepted for IRFPS29N60LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS29N60LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS29N60LPBF?

IRFPS29N60LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS29N60LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS29N60LPBF?

For technical support, including IRFPS29N60LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS29N60LPBF requirements.

6.How does Aetrix verify that IRFPS29N60LPBF is sourced from the original manufacturer or authorized distributors?

All IRFPS29N60LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS29N60LPBF meets industry standards.

7.What is the process for return or replacement of IRFPS29N60LPBF?

All IRFPS29N60LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS29N60LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS29N60LPBF part is unused and in its original packaging.

Return procedure for IRFPS29N60LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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