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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS30N60KPBF

Name: IRFPS30N60KPBF
Brand: Vishay Siliconix
SKU: IRFPS30N60KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS30N60KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS30N60KPBF.pdf

Description:: MOSFET N-CH 600V 30A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS30N60KPBF from Vishay Siliconix is a 600 V, 30 A N-channel enhancement-mode power MOSFET in Super-247™ package, featuring R_DS(on) = 0.16 Ω at V_GS = 10 V, Q_g = 220 nC, and 520 mJ single-pulse avalanche energy - deployed in high-voltage SMPS primary-side switching stages.

For engineers reviewing the IRFPS30N60KPBF datasheet, IRFPS30N60KPBF pinout, IRFPS30N60KPBF application, or IRFPS30N60KPBF equivalent, key selection criteria include its 600 V blocking capability, 450 W T_C = 25 °C power dissipation, rugged unclamped inductive switching performance, and lead (Pb)-free RoHS-compliant termination.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for high-voltage hard-switching operation. Its gate structure delivers low Q_gd/Q_g ratio (110/220 nC), supporting controlled dV/dt during turn-off and reducing cross-conduction risk in bridge topologies.

Thermal design is enabled by R_thJC = 0.28 °C/W and flat-case mounting interface (R_thCS = 0.24 °C/W). The integrated body diode exhibits t_rr = 640–960 ns and Q_rr = 11–16 µC at I_F = 30 A, suitable for moderate-frequency freewheeling in non-synchronous converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with ≥50 % voltage margin for surge and ringing
R_DS(on) max	0.19 Ω at V_GS = 10 V, T_J = 125 °C - defines conduction loss in continuous high-current operation
Q_g	220 nC - determines gate driver current requirement (e.g., ≥10 mA avg. for 100 kHz switching)
E_AS	520 mJ - enables reliable operation under unclamped inductive load transients without external snubbers
I_D cont @ T_C = 100 °C	19 A - sets practical current limit for heatsink-limited thermal design
dV/dt rating	13 V/ns - specifies maximum tolerable drain voltage slew rate before parasitic turn-on
P_D @ T_C = 25 °C	450 W - establishes upper bound for case-mounted power handling with forced cooling

Pinout & Package

IRFPS30N60KPBF uses the Super-247™ package - a through-hole variant of TO-247 with extended creepage distance and enhanced thermal pad area for high-voltage isolation and improved heat transfer to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground
Source (S)	Return path for load current and gate reference node	Low-inductance connection critical for stable gate drive; ties directly to power ground plane
Gate (G)	Control terminal for channel modulation	High-impedance input requiring low-impedance gate driver (<3.9 Ω typical) to manage 220 nC charge

Key Features

Feature	Design Value
Low Q_g / Q_gd ratio	220 nC total gate charge with 110 nC Miller charge - reduces switching loss and improves EMI behavior in hard-switched topologies
Characterized avalanche capability	520 mJ single-pulse and 45 mJ repetitive avalanche energy - eliminates need for external clamping in UPS and PFC boost stages
Enhanced dV/dt ruggedness	13 V/ns rated peak diode recovery dV/dt - prevents false turn-on during fast commutation in high-side configurations
RoHS-compliant Pb-free termination	SnAgCu solder finish on leads - meets IPC-J-STD-020 moisture sensitivity level 1 and JEDEC reflow profiles

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switch controlling energy transfer from 400 V DC bus to transformer primary winding. Use Value: 600 V rating accommodates 480 V line surges; 0.16 Ω R_DS(on) minimizes conduction loss at 30 A peak current.	Use Scenario: 10 kVA double-conversion UPS delivering clean sine-wave output during grid failure. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge driving LC filter. Use Value: 520 mJ avalanche energy withstands motor regeneration spikes; 13 V/ns dV/dt rating ensures stability during rapid load transitions.
Solar Microinverter DC-DC Stage	EV Onboard Charger PFC Boost
Use Scenario: 300 W microinverter with interleaved flyback architecture converting 30–60 V PV input to 400 V DC link. IC Role / Device Role / Timing Role: Primary-side switching element in high-frequency resonant converter stage. Use Value: Low Q_g enables efficient 250 kHz operation; characterized C_iss/C_oss supports accurate soft-switching timing design.	Use Scenario: 6.6 kW bidirectional OBC using continuous conduction mode (CCM) boost PFC with 400 V output. IC Role / Device Role / Timing Role: Boost switch handling 16 A RMS input current at 65 kHz switching frequency. Use Value: 19 A continuous rating at 100 °C case temperature supports compact heatsink design; body diode Q_rr = 11–16 µC limits reverse recovery loss.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch controlling energy transfer from 400 V DC bus to transformer primary winding.

Use Value: 600 V rating accommodates 480 V line surges; 0.16 Ω R_DS(on) minimizes conduction loss at 30 A peak current.

Use Scenario: 10 kVA double-conversion UPS delivering clean sine-wave output during grid failure.

IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/MOSFET inverter bridge driving LC filter.

Use Value: 520 mJ avalanche energy withstands motor regeneration spikes; 13 V/ns dV/dt rating ensures stability during rapid load transitions.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC Boost

Use Scenario: 300 W microinverter with interleaved flyback architecture converting 30–60 V PV input to 400 V DC link.

IC Role / Device Role / Timing Role: Primary-side switching element in high-frequency resonant converter stage.

Use Value: Low Q_g enables efficient 250 kHz operation; characterized C_iss/C_oss supports accurate soft-switching timing design.

Use Scenario: 6.6 kW bidirectional OBC using continuous conduction mode (CCM) boost PFC with 400 V output.

IC Role / Device Role / Timing Role: Boost switch handling 16 A RMS input current at 65 kHz switching frequency.

Use Value: 19 A continuous rating at 100 °C case temperature supports compact heatsink design; body diode Q_rr = 11–16 µC limits reverse recovery loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60ND	600 V, 30 A, R_DS(on) = 0.18 Ω, Q_g = 120 nC, D²PAK package	Lower gate charge but higher R_DS(on); surface-mount only, no through-hole option	Preferred where PCB space is constrained and gate drive strength is limited
IXFH30N60P	600 V, 30 A, R_DS(on) = 0.17 Ω, Q_g = 200 nC, TO-247AC package	Nearly identical specs but lacks specified avalanche energy rating and dV/dt test data	Acceptable where avalanche robustness is not mission-critical and thermal interface matches

Compared with STW30NM60ND and IXFH30N60P, IRFPS30N60KPBF offers superior avalanche ruggedness (520 mJ vs. unspecified/320 mJ) and verified 13 V/ns dV/dt immunity - critical for reliability in utility-grade UPS and industrial SMPS where transient overvoltage is frequent.

Availability

IRFPS30N60KPBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for IRFPS30N60KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-performance devices for industrial and computing infrastructure.

The IRFPS30N60KPBF belongs to Vishay's high-voltage Power MOSFET family designed specifically for primary-side switching in 400–600 V DC bus applications including telecom rectifiers, server PSUs, and industrial UPS systems.

FAQ

What is the maximum continuous drain current for IRFPS30N60KPBF at 100 °C case temperature?

The IRFPS30N60KPBF supports 19 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the Super-247™ package and must be validated against actual heatsink performance and ambient conditions in the final design. The IRFPS30N60KPBF datasheet confirms this value under pulsed test conditions with linear derating factor of 3.6 W/°C above 25 °C.

Does IRFPS30N60KPBF have a fully characterized body diode for synchronous rectification?

No - the IRFPS30N60KPBF body diode is characterized for freewheeling and recovery (t_rr = 640–960 ns, Q_rr = 11–16 µC), but it is not optimized for synchronous rectification due to relatively high V_SD = 1.5 V and lack of tailored soft-recovery design. The IRFPS30N60KPBF is intended for hard-switched primary-side use, not secondary-side synchronous FET replacement.

What is the gate threshold voltage range for IRFPS30N60KPBF?

The gate-source threshold voltage V_GS(th) for IRFPS30N60KPBF is specified from 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 µA. This range indicates consistent turn-on behavior across production lots and supports compatibility with standard 10 V gate drivers. The IRFPS30N60KPBF does not qualify as a logic-level device, requiring ≥10 V for full enhancement.

Can IRFPS30N60KPBF be used in avalanche mode for energy recovery circuits?

Yes - the IRFPS30N60KPBF is fully characterized for unclamped inductive switching with 520 mJ single-pulse and 45 mJ repetitive avalanche energy ratings. These values are measured per JEDEC standard JESD24-1 and validated with L = 1.1 mH, R_G = 25 Ω, and I_AS = 30 A. The IRFPS30N60KPBF datasheet provides detailed waveforms and test circuit diagrams for design validation.

What is the thermal resistance from junction to case for IRFPS30N60KPBF?

The maximum junction-to-case thermal resistance R_thJC for IRFPS30N60KPBF is 0.28 °C/W, measured from die junction to the drain metal tab under standardized test conditions. This value assumes proper mounting with thermal grease on a flat, greased heatsink surface and is critical for calculating worst-case junction temperature in high-power applications using the IRFPS30N60KPBF.

IRFPS30N60KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 5870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS30N60KPBF FAQ

1.How can I place an order for IRFPS30N60KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS30N60KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS30N60KPBF reliable?

The price and inventory of IRFPS30N60KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS30N60KPBF is usually 5 days.

3.What payment methods are accepted for IRFPS30N60KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS30N60KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS30N60KPBF?

IRFPS30N60KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS30N60KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS30N60KPBF?

For technical support, including IRFPS30N60KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS30N60KPBF requirements.

6.How does Aetrix verify that IRFPS30N60KPBF is sourced from the original manufacturer or authorized distributors?

All IRFPS30N60KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS30N60KPBF meets industry standards.

7.What is the process for return or replacement of IRFPS30N60KPBF?

All IRFPS30N60KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS30N60KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS30N60KPBF part is unused and in its original packaging.

Return procedure for IRFPS30N60KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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