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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS35N50LPBF

Name: IRFPS35N50LPBF
Brand: Vishay Siliconix
SKU: IRFPS35N50LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS35N50LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS35N50LPBF.pdf

Description:: MOSFET N-CH 500V 34A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS35N50LPBF from Vishay Siliconix is a 500 V, 34 A N-channel power MOSFET in SUPER-247™ package with R_DS(on) = 0.125 Ω at V_GS = 10 V, Q_g = 230 nC, and enhanced dV/dt ruggedness (15 V/ns). It serves as a primary switching device in high-efficiency zero-voltage-switching (ZVS) SMPS topologies for telecom and server power supplies.

For engineers reviewing the IRFPS35N50LPBF datasheet, IRFPS35N50LPBF pinout, IRFPS35N50LPBF application, or IRFPS35N50LPBF equivalent, key selection criteria include avalanche energy rating (E_AS = 560 mJ), body diode reverse recovery performance (t_rr = 170–330 ns), gate charge profile, thermal resistance (R_thJC = 0.28 °C/W), and RoHS-compliant lead-free termination.

Technical Context

This MOSFET employs planar silicon technology optimized for hard-switched and resonant ZVS applications. Its elevated gate threshold voltage (V_GS(th) = 3.0–5.0 V) improves noise immunity, while the super-fast intrinsic body diode enables elimination of external freewheeling diodes in phase-shifted full-bridge converters.

The device features low effective output capacitance (C_{oss eff.} = 320 pF at V_DS = 0–400 V) and high dV/dt capability (15 V/ns), supporting robust operation under fast transient conditions without spurious turn-on. Thermal design is enabled by direct case-to-sink mounting via the SUPER-247™ drain-tab package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports 400 V bus designs with 25 % margin for voltage spikes in telecom/server PSUs
R_DS(on)	0.125 Ω @ V_GS = 10 V - enables <1.3 W conduction loss at 34 A continuous current
Q_g	230 nC - determines gate driver power requirement and switching speed trade-off
E_AS	560 mJ - specifies single-pulse unclamped inductive switching robustness without failure
t_rr	170–330 ns - defines body diode recovery time critical for ZVS timing window control
R_thJC	0.28 °C/W - allows 450 W power dissipation with ≤126 °C temperature rise above heatsink
dV/dt	15 V/ns - ensures immunity to parasitic turn-on during high dv/dt transitions in bridge legs

Pinout & Package

SUPER-247™ package: isolated plastic housing with electrically active drain tab (D) on underside, screw-mount compatible (6-32/M3), 1.1 N·m torque rating, and 1.6 mm measurement point per JEDEC standard.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; 230 nC total charge must be sourced/sunk
D	Drain	Main high-side power terminal; electrically connected to metal tab; must be thermally and electrically coupled to heatsink
S	Source	Power return path and gate reference; forms common node with driver ground in high-side configurations

Key Features

Feature	Design Value
Super-fast body diode	Enables ZVS operation without external diode-reduces component count and layout area in resonant converters
Enhanced dV/dt ruggedness	15 V/ns rating prevents false turn-on during high-speed switching transients in half/full-bridge circuits
High gate threshold voltage	3.0–5.0 V range improves noise margin against EMI-induced gate glitches in noisy power environments
Low C_{oss eff.}	320 pF reduces switching loss during turn-off and eases snubber design in high-frequency SMPS
Lead (Pb)-free construction	RoHS-compliant termination meets global environmental compliance requirements for industrial and telecom equipment

Applications

Telecom Power Supplies	Server SMPS
Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converters delivering 1–3 kW from 380–400 V DC bus. IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating in ZVS mode; body diode conducts during dead-time before complementary switch turns on. Use Value: Super-fast body diode eliminates need for discrete SiC Schottky, reducing BOM cost and PCB footprint by ~12 mm² per leg.	Use Scenario: Main switching element in LLC resonant converter front-end for 48 V intermediate bus generation in AI accelerator racks. IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacement in secondary-side synchronous FET position (with appropriate gate drive). Use Value: 0.125 Ω R_DS(on) and 560 mJ E_AS support reliable 30 A continuous operation under 150 °C junction temperature limits.
Uninterruptible Power Supplies	Industrial Motor Drives
Use Scenario: Inverter leg switch in double-conversion UPS systems converting 400 V DC battery bank to 230 V AC output. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz PWM inverters; handles bidirectional current via body diode during regeneration. Use Value: 140 A pulsed drain current and 2200 µC Q_rr at 125 °C ensure robust commutation during motor regenerative braking events.	Use Scenario: Half-bridge high-side switch in servo drive inverters controlling PMSM motors in CNC machinery. IC Role / Device Role / Timing Role: Fast-switching power stage element requiring low gate charge and high dV/dt immunity in noisy factory EMI environments. Use Value: 230 nC Q_g and 3.0–5.0 V V_GS(th) allow use with standard 12 V gate drivers while rejecting >1 kV/µs common-mode noise.

Telecom Power Supplies

Server SMPS

Use Scenario: Primary-side switch in phase-shifted full-bridge DC/DC converters delivering 1–3 kW from 380–400 V DC bus.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating in ZVS mode; body diode conducts during dead-time before complementary switch turns on.

Use Value: Super-fast body diode eliminates need for discrete SiC Schottky, reducing BOM cost and PCB footprint by ~12 mm² per leg.

Use Scenario: Main switching element in LLC resonant converter front-end for 48 V intermediate bus generation in AI accelerator racks.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacement in secondary-side synchronous FET position (with appropriate gate drive).

Use Value: 0.125 Ω R_DS(on) and 560 mJ E_AS support reliable 30 A continuous operation under 150 °C junction temperature limits.

Uninterruptible Power Supplies

Industrial Motor Drives

Use Scenario: Inverter leg switch in double-conversion UPS systems converting 400 V DC battery bank to 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz PWM inverters; handles bidirectional current via body diode during regeneration.

Use Value: 140 A pulsed drain current and 2200 µC Q_rr at 125 °C ensure robust commutation during motor regenerative braking events.

Use Scenario: Half-bridge high-side switch in servo drive inverters controlling PMSM motors in CNC machinery.

IC Role / Device Role / Timing Role: Fast-switching power stage element requiring low gate charge and high dV/dt immunity in noisy factory EMI environments.

Use Value: 230 nC Q_g and 3.0–5.0 V V_GS(th) allow use with standard 12 V gate drivers while rejecting >1 kV/µs common-mode noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW56N60M2	600 V rating, higher R_DS(on) (0.135 Ω), lower Q_g (190 nC), TO-247 package	Better voltage margin but higher conduction loss; suited for 480 VAC input systems	Select when system input voltage exceeds 450 V DC or when lower gate drive power is prioritized over conduction efficiency
IXFH50N50P	500 V rating, higher R_DS(on) (0.14 Ω), higher E_AS (720 mJ), TO-247 package	Higher avalanche robustness but slower body diode (t_rr = 250–400 ns); less suitable for tight ZVS timing windows	Select when unclamped inductive stress dominates design concerns over ZVS diode recovery performance

Compared with STW56N60M2 and IXFH50N50P, the IRFPS35N50LPBF offers the lowest R_DS(on) and fastest body diode among 500 V-class SUPER-247™ devices, making it optimal for high-efficiency ZVS SMPS where conduction loss and dead-time management are critical.

Availability

IRFPS35N50LPBF is available at Aetrix Electronics and suitable for telecom power supplies, server SMPS, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFPS35N50LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The IRFPS35N50LPBF belongs to Vishay's "Super Junction"-optimized power MOSFET product line, engineered specifically for high-frequency, high-efficiency resonant and soft-switching power conversion in telecom infrastructure and enterprise computing.

FAQ

What is the maximum continuous drain current for IRFPS35N50LPBF at 100 °C case temperature?

The IRFPS35N50LPBF supports 22 A continuous drain current at T_C = 100 °C, derated from its 34 A rating at 25 °C using the linear derating factor of 3.6 W/°C. This value is confirmed in the Absolute Maximum Ratings table and validated by thermal impedance curves in Figure 11 of the datasheet. Designers must ensure heatsink design maintains case temperature ≤100 °C under full load to sustain this current rating. The IRFPS35N50LPBF's R_thJC = 0.28 °C/W enables this performance with appropriate thermal interface material and mounting pressure.

Does IRFPS35N50LPBF have a fully rated avalanche capability, and what is its EAS value?

Yes, the IRFPS35N50LPBF is fully specified for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 560 mJ, measured under standardized conditions (L = 0.97 mH, R_G = 25 Ω, I_AS = 34 A). Repetitive avalanche energy (E_AR) is 45 mJ, and repetitive avalanche current (I_AR) is 34 A. These values are explicitly listed in the Absolute Maximum Ratings table and verified in Figure 12c. The IRFPS35N50LPBF's avalanche rating supports reliable operation in inductive switching circuits without external clamping.

What is the gate-source threshold voltage range for IRFPS35N50LPBF, and why does it matter for noise immunity?

The IRFPS35N50LPBF has a gate-source threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 µA. This elevated minimum threshold-higher than standard MOSFETs (typically 1–2 V)-provides improved noise immunity by requiring larger voltage transients to inadvertently turn on the device. In high-dv/dt environments like bridge-leg switching nodes, this reduces risk of shoot-through. The IRFPS35N50LPBF's V_GS(th) specification directly supports robust operation in telecom and server power supplies where EMI is prevalent.

Can IRFPS35N50LPBF be used in zero-voltage-switching (ZVS) topologies without an external body diode?

Yes, the IRFPS35N50LPBF is explicitly designed for ZVS applications with its super-fast intrinsic body diode. Datasheet Feature #1 states: "Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications." Measured t_rr of 170–330 ns and Q_rr of 670–2200 µC enable clean commutation during dead-time intervals. This capability is validated across temperature and current conditions in Figures 8 and 12. Using the IRFPS35N50LPBF in ZVS avoids added cost, footprint, and parasitic inductance of external diodes-critical in high-density server SMPS designs.

What is the thermal resistance from junction to case (R_thJC) for IRFPS35N50LPBF, and how does it impact heatsink design?

The IRFPS35N50LPBF has a maximum junction-to-case thermal resistance (R_thJC) of 0.28 °C/W, measured from junction to the drain tab per JEDEC standard. This low value reflects the SUPER-247™ package's efficient thermal path through the exposed drain pad. For a 450 W maximum power dissipation, this yields a 126 °C temperature rise from case to junction-requiring heatsink + interface design to hold case temperature ≤24 °C for 150 °C max junction. The IRFPS35N50LPBF's R_thJC enables compact thermal solutions in space-constrained telecom rectifiers and server VRMs.

IRFPS35N50LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 145mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 5580 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS35N50LPBF FAQ

1.How can I place an order for IRFPS35N50LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS35N50LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS35N50LPBF reliable?

The price and inventory of IRFPS35N50LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS35N50LPBF is usually 5 days.

3.What payment methods are accepted for IRFPS35N50LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS35N50LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS35N50LPBF?

IRFPS35N50LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS35N50LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS35N50LPBF?

For technical support, including IRFPS35N50LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS35N50LPBF requirements.

6.How does Aetrix verify that IRFPS35N50LPBF is sourced from the original manufacturer or authorized distributors?

All IRFPS35N50LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS35N50LPBF meets industry standards.

7.What is the process for return or replacement of IRFPS35N50LPBF?

All IRFPS35N50LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS35N50LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS35N50LPBF part is unused and in its original packaging.

Return procedure for IRFPS35N50LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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