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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS38N60L

Name: IRFPS38N60L
Brand: Vishay Siliconix
SKU: IRFPS38N60L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS38N60L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS38N60L.pdf

Description:: MOSFET N-CH 600V 38A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS38N60L from Vishay Siliconix is a 600 V, 38 A N-channel Superjunction Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.12 Ω at V_GS = 10 V, Q_g = 320 nC, and enhanced dV/dt ruggedness (19 V/ns). It delivers high avalanche energy (E_AS = 680 mJ) and supports zero-voltage-switching (ZVS) topologies in high-efficiency telecom and server SMPS.

For engineers reviewing the IRFPS38N60L datasheet, IRFPS38N60L pinout, IRFPS38N60L application, or IRFPS38N60L equivalent, key selection criteria include its 600 V blocking capability, superfast body diode (t_rr = 170–250 ns), low gate charge for simplified drive, robust unclamped inductive switching performance, and thermal resistance R_thJC = 0.22 °C/W.

Technical Context

This device employs a planar superjunction architecture optimized for high-voltage hard-switching and ZVS resonant converters. Its elevated V_GS(th) (3.0–5.0 V) improves noise immunity in noisy power environments, while the integrated body diode exhibits fast reverse recovery (Q_rr = 830–1240 nC at 25 °C) and high dI/dt capability (≤ 630 A/μs).

The IRFPS38N60L operates with fixed gate-drive voltage requirements (±30 V max), supports continuous drain current up to 38 A at T_C = 25 °C, and maintains stable R_DS(on) over temperature (typ. +0.41%/°C coefficient). Its SOA is limited by R_DS(on) in linear region and thermal constraints above 100 μs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Enables use in 400 V DC bus systems with 50 % voltage margin for transients and ringing.
R_DS(on) @ V_GS = 10 V	0.12 Ω (max) - Delivers ≤ 173 W conduction loss at 38 A, critical for high-current primary-side switches.
Q_g	320 nC (max) - Determines gate driver power requirement; requires ≥ 2.5 A peak drive for 100 ns switching transitions.
E_AS	680 mJ (single-pulse) - Supports reliable unclamped inductive switching in flyback or LLC primary circuits without snubbers.
t_rr	170–250 ns (T_J = 25 °C) - Enables ZVS operation with minimal turn-on loss and reduced EMI vs. standard MOSFETs.
R_thJC	0.22 °C/W - Allows > 500 W power dissipation with 110 °C ΔT to heatsink; enables compact thermal design in high-density PSUs.
dV/dt rating	19 V/ns - Resists false turn-on during high-slew-rate switching events, improving system reliability in high-frequency converters.

Pinout & Package

IRFPS38N60L uses the Super-247 (TO-274AA) package: isolated metal tab (drain), 3-pin through-hole outline with 5.45 mm lead pitch, JEDEC-compliant mechanical dimensions, and tin-plated leads. Thermal path is optimized via direct drain-to-heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 7990 pF necessitates low-impedance gate driver routing.
D (Drain)	High-voltage power terminal	Connected to heatsink; carries full 600 V blocking and 38 A load current; electrically isolated tab enables floating heatsink mounting.
S (Source)	Power return and reference node	Common return for gate drive and current sensing; low-inductance layout essential to avoid shoot-through in half-bridge configurations.

Key Features

Feature	Design Value
Superfast body diode	Eliminates need for external anti-parallel diodes in ZVS LLC or phase-shifted full-bridge converters, reducing BOM count and PCB area.
Enhanced dV/dt ruggedness	19 V/ns rating prevents spurious turn-on during high dv/dt commutation, enabling stable operation without gate clamping networks.
Higher V_GS(th)	3.0–5.0 V threshold reduces susceptibility to noise-induced turn-on in high-noise power stages, improving system robustness.
Low Q_gd/Q_g ratio	Q_gd = 160 nC / Q_g = 320 nC = 0.5 - Improves Miller immunity and enables faster, more controllable switching transitions.
High avalanche energy rating	680 mJ single-pulse E_AS allows safe operation under transient overloads and inductive fault conditions without derating.

Applications

Telecom Rectifier Modules	Server AC-DC Front-End
Use Scenario: High-density 48 V output rectification in 3 kW telecom power supplies operating at 100–300 kHz with ZVS control. IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge or LLC resonant converter; handles 600 V DC link and 38 A peak current. Use Value: Superfast body diode enables soft-switching, reducing switching losses by >40 % vs. standard MOSFETs and lowering heatsink requirements.	Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server PSUs with digital control and adaptive dead-time management. IC Role / Device Role / Timing Role: Main switching element in active clamp forward or phase-shifted full-bridge topology; rated for 600 V bus and 150 A pulsed drain current. Use Value: 19 V/ns dV/dt rating ensures stable gate control under high-frequency, high-dv/dt conditions typical of digitally controlled high-efficiency PSUs.
Industrial UPS Inverters	Motor Drive Half-Bridge Stages
Use Scenario: Output H-bridge stage in 5 kVA online UPS systems requiring high-reliability 600 V switching with overload tolerance. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg; conducts 38 A continuous and withstands 150 A pulsed current during short-circuit events. Use Value: 680 mJ single-pulse avalanche energy provides inherent short-circuit ruggedness without external protection circuitry.	Use Scenario: High-side switch in 7.5 kW industrial servo drive half-bridge, operating at 16 kHz with regenerative braking. IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling motor phase voltage; body diode conducts reverse recovery current during PWM freewheeling. Use Value: 170–250 ns t_rr minimizes body diode conduction loss and associated heating during regeneration, extending thermal margin.

Telecom Rectifier Modules

Server AC-DC Front-End

Use Scenario: High-density 48 V output rectification in 3 kW telecom power supplies operating at 100–300 kHz with ZVS control.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge or LLC resonant converter; handles 600 V DC link and 38 A peak current.

Use Value: Superfast body diode enables soft-switching, reducing switching losses by >40 % vs. standard MOSFETs and lowering heatsink requirements.

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server PSUs with digital control and adaptive dead-time management.

IC Role / Device Role / Timing Role: Main switching element in active clamp forward or phase-shifted full-bridge topology; rated for 600 V bus and 150 A pulsed drain current.

Use Value: 19 V/ns dV/dt rating ensures stable gate control under high-frequency, high-dv/dt conditions typical of digitally controlled high-efficiency PSUs.

Industrial UPS Inverters

Motor Drive Half-Bridge Stages

Use Scenario: Output H-bridge stage in 5 kVA online UPS systems requiring high-reliability 600 V switching with overload tolerance.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg; conducts 38 A continuous and withstands 150 A pulsed current during short-circuit events.

Use Value: 680 mJ single-pulse avalanche energy provides inherent short-circuit ruggedness without external protection circuitry.

Use Scenario: High-side switch in 7.5 kW industrial servo drive half-bridge, operating at 16 kHz with regenerative braking.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET controlling motor phase voltage; body diode conducts reverse recovery current during PWM freewheeling.

Use Value: 170–250 ns t_rr minimizes body diode conduction loss and associated heating during regeneration, extending thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	600 V, 62 A, R_DS(on) = 0.085 Ω, Q_g = 120 nC, TO-247 package; lower R_DS(on) but lower E_AS (320 mJ).	Better conduction efficiency at high current, but less rugged in unclamped inductive switching; requires tighter gate drive timing control.	Prefer STW62N60M2 when conduction loss dominates and avalanche stress is low; IRFPS38N60L remains superior for ZVS and high-dV/dt environments.
IXFH50N60P	600 V, 50 A, R_DS(on) = 0.11 Ω, Q_g = 240 nC, TO-247 package; higher ID but no specified dV/dt rating or superfast diode data.	Higher current rating suits larger power stages, but lacks documented ZVS-optimized diode performance and dV/dt validation.	Choose IXFH50N60P for higher current headroom where diode speed and dV/dt are secondary; IRFPS38N60L is preferred when ZVS timing and noise immunity are critical.

Compared with STW62N60M2 and IXFH50N60P, the IRFPS38N60L offers uniquely validated 19 V/ns dV/dt immunity and superfast body diode parameters essential for reliable ZVS operation-making it the optimal choice for telecom/server SMPS where switching integrity and avalanche robustness are non-negotiable.

Availability

IRFPS38N60L is available at Aetrix Electronics and suitable for telecom rectifier modules, server AC-DC front-end designs, and industrial UPS inverters requiring stable component supply, long-lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFPS38N60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The IRFPS38N60L belongs to Vishay's Superjunction Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switched-mode power supplies in telecom, computing, and industrial infrastructure.

FAQ

What is the maximum continuous drain current rating for IRFPS38N60L at 100 °C case temperature?

The IRFPS38N60L supports 24 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and ensures junction temperature remains within the -55 °C to +150 °C operating range under sustained load conditions. Designers must verify heatsink performance to maintain T_C ≤ 100 °C for full 24 A operation.

Does IRFPS38N60L have a specified peak diode recovery dV/dt rating?

Yes, the IRFPS38N60L has a specified peak diode recovery dV/dt rating of 19 V/ns, measured under defined test conditions (T_J = 25 °C, I_SD = 38 A, dI/dt = 100 A/μs). This parameter is explicitly documented in the Absolute Maximum Ratings table and confirms the device's suitability for high-slew-rate ZVS applications where rapid voltage reapplied across the body diode could otherwise cause false turn-on or failure.

What is the gate-source threshold voltage range for IRFPS38N60L?

The gate-source threshold voltage (V_GS(th)) for IRFPS38N60L is specified as 3.0 V minimum to 5.0 V maximum at T_J = 25 °C and I_D = 250 μA. This elevated threshold improves noise immunity compared to standard MOSFETs and ensures reliable turn-off under noisy gate-drive conditions common in high-power SMPS layouts.

Can IRFPS38N60L be used in avalanche mode, and what is its single-pulse energy rating?

Yes, the IRFPS38N60L is rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 680 mJ, tested under standardized conditions (T_J = 25 °C, L = 0.91 mH, R_g = 25 Ω, I_AS = 38 A). This rating enables robust handling of inductive switching transients without external snubbers in properly designed circuits.

What package type does IRFPS38N60L use, and is it compatible with standard TO-247 heatsinks?

The IRFPS38N60L uses the Super-247 (TO-274AA) package, which shares the same footprint and mounting hole pattern as TO-247 but features an isolated metal tab and enhanced thermal performance (R_thJC = 0.22 °C/W). It is mechanically compatible with standard TO-247 heatsinks, though thermal interface material and mounting torque (1.1 N·m) must comply with Vishay's recommendations to ensure optimal heat transfer.

IRFPS38N60L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 320 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS38N60L FAQ

1.How can I place an order for IRFPS38N60L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS38N60L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS38N60L reliable?

The price and inventory of IRFPS38N60L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS38N60L is usually 5 days.

3.What payment methods are accepted for IRFPS38N60L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS38N60L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS38N60L?

IRFPS38N60L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS38N60L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS38N60L?

For technical support, including IRFPS38N60L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS38N60L requirements.

6.How does Aetrix verify that IRFPS38N60L is sourced from the original manufacturer or authorized distributors?

All IRFPS38N60L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS38N60L meets industry standards.

7.What is the process for return or replacement of IRFPS38N60L?

All IRFPS38N60L units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS38N60L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS38N60L part is unused and in its original packaging.

Return procedure for IRFPS38N60L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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