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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS38N60LPBF

Name: IRFPS38N60LPBF
Brand: Vishay Siliconix
SKU: IRFPS38N60LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS38N60LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS38N60LPBF.pdf

Description:: MOSFET N-CH 600V 38A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS38N60LPBF from Vishay Siliconix is a 600 V, 38 A N-channel superjunction power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.12 Ω at V_GS = 10 V, Q_g = 320 nC, and enhanced dV/dt ruggedness (19 V/ns). It delivers robust unclamped inductive switching with E_AS = 680 mJ and is engineered for zero-voltage-switching (ZVS) SMPS topologies in high-efficiency telecom and server power supplies.

For engineers reviewing the IRFPS38N60LPBF datasheet, IRFPS38N60LPBF pinout, IRFPS38N60LPBF application, or IRFPS38N60LPBF equivalent, this device is selected for high-voltage, high-current hard-switching and resonant converter stages where fast body diode recovery (t_rr = 170–250 ns), low gate charge, and avalanche-rated operation are critical design requirements.

Technical Context

This MOSFET employs a superjunction cell structure optimized for high-voltage operation with reduced specific on-resistance. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) provides improved noise immunity over standard MOSFETs, while its 19 V/ns peak diode recovery dV/dt rating enables stable operation under fast commutation transients.

The device integrates a fast, low-loss intrinsic body diode (V_SD = 1.5 V at I_S = 38 A, t_rr = 170 ns @ T_J = 25 °C) that eliminates external anti-parallel diodes in ZVS flyback and LLC resonant converters. Thermal performance is anchored by R_thJC = 0.22 °C/W and a maximum P_D of 540 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Supports primary-side switching in 400 V DC bus and universal AC-input offline SMPS.
R_DS(on) max	0.15 Ω at V_GS = 10 V, I_D = 23 A - Enables low conduction loss in high-current output stages up to 38 A continuous.
Q_g	320 nC - Requires moderate gate drive strength; compatible with standard isolated gate drivers (e.g., UCC27712, Si827x).
E_AS	680 mJ - Withstands single-pulse unclamped inductive energy without failure-critical for transformer leakage spike handling.
t_rr	170–250 ns @ T_J = 25 °C - Fast body diode recovery minimizes switching loss and ringing in ZVS/ZCS topologies.
dV/dt rating	19 V/ns - High dv/dt immunity prevents spurious turn-on during high-slew-rate transitions in bridge-leg configurations.
R_thJC	0.22 °C/W - Enables high-power dissipation with minimal junction-to-case thermal drop using standard heatsink mounting.

Pinout & Package

IRFPS38N60LPBF is housed in the Super-247 (TO-274AA) package-a high-power, surface-mount-compatible variant of TO-274 with isolated drain tab, optimized for high-voltage isolation and thermal performance. The package features a single-sided heat sink interface and tin-plated copper leads.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; must be mounted to heatsink with electrically insulating but thermally conductive interface.
Gate	Control terminal for channel modulation	High-impedance input requiring <320 nC total charge; sensitive to ESD-requires gate resistor (R_G ≈ 4.3 Ω typical) and clamping.
Source	Reference node for gate drive and current return	Common return path for load current and gate drive loop; layout must minimize inductance to suppress oscillation.

Key Features

Feature	Design Value
Superfast body diode	Eliminates need for external anti-parallel diode in ZVS flyback/LLC converters-reduces BOM count and PCB area.
Enhanced dV/dt capability	19 V/ns rating ensures reliable operation in high-slew-rate half/full-bridge circuits without false triggering.
Higher V_GS(th)	3.0–5.0 V threshold improves noise margin against gate-drive crosstalk and ground bounce in dense power layouts.
Low Q_gd/Q_g ratio	Q_gd = 160 nC / Q_g = 320 nC → 50% - Supports clean Miller plateau transition and predictable turn-off timing.
Avalanche-rated	Rated for repetitive (I_AR = 38 A) and single-pulse (E_AS = 680 mJ) avalanche-enables robust design without snubber oversizing.

Applications

Telecom Rectifier Modules	Server PSU Primary Switches
Use Scenario: High-density 48 V output rectification in 3 kW telecom rectifiers using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 100–200 kHz with ZVS turn-on. Use Value: Low R_DS(on) and fast t_rr reduce conduction and reverse-recovery losses, improving efficiency from 95.2 % to 96.1 % at full load.	Use Scenario: Primary-side switching in 1+1 redundant 2 kW CRPS server PSUs with active clamp forward or LLC resonant control. IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with soft-switching transitions. Use Value: Superfast body diode enables reliable ZVS across line/load range, reducing EMI and eliminating external diode cost.
Industrial UPS Inverters	Motor Drive Half-Bridge Legs
Use Scenario: Output H-bridge stage in 5 kVA online double-conversion UPS converting 400 V DC to 230 V AC. IC Role / Device Role / Timing Role: High-side/low-side switching device in 16 kHz PWM inverter leg with active short-circuit protection. Use Value: 600 V rating and 19 V/ns dV/dt immunity prevent shoot-through during fast voltage transients during grid fault recovery.	Use Scenario: 3-phase inverter leg in 7.5 kW HVAC compressor drives operating at 8–12 kHz PWM frequency. IC Role / Device Role / Timing Role: Power switch in motor phase leg with integrated body diode conducting freewheeling current. Use Value: 38 A continuous current and 150 A pulsed rating support peak motor torque demands without derating.

Telecom Rectifier Modules

Server PSU Primary Switches

Use Scenario: High-density 48 V output rectification in 3 kW telecom rectifiers using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 100–200 kHz with ZVS turn-on.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and reverse-recovery losses, improving efficiency from 95.2 % to 96.1 % at full load.

Use Scenario: Primary-side switching in 1+1 redundant 2 kW CRPS server PSUs with active clamp forward or LLC resonant control.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with soft-switching transitions.

Use Value: Superfast body diode enables reliable ZVS across line/load range, reducing EMI and eliminating external diode cost.

Industrial UPS Inverters

Motor Drive Half-Bridge Legs

Use Scenario: Output H-bridge stage in 5 kVA online double-conversion UPS converting 400 V DC to 230 V AC.

IC Role / Device Role / Timing Role: High-side/low-side switching device in 16 kHz PWM inverter leg with active short-circuit protection.

Use Value: 600 V rating and 19 V/ns dV/dt immunity prevent shoot-through during fast voltage transients during grid fault recovery.

Use Scenario: 3-phase inverter leg in 7.5 kW HVAC compressor drives operating at 8–12 kHz PWM frequency.

IC Role / Device Role / Timing Role: Power switch in motor phase leg with integrated body diode conducting freewheeling current.

Use Value: 38 A continuous current and 150 A pulsed rating support peak motor torque demands without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N60M2	600 V, 38 A, R_DS(on) = 0.13 Ω, Q_g = 270 nC, TO-247 package, no specified dV/dt rating	Lacks published dV/dt rating and body diode t_rr data; not qualified for ZVS-critical designs	Preferred where gate drive simplicity (lower Q_g) outweighs need for guaranteed ZVS diode performance.
IXFH38N60P	600 V, 38 A, R_DS(on) = 0.14 Ω, Q_g = 340 nC, TO-247 package, t_rr = 220 ns, dV/dt = 12 V/ns	Slower dV/dt rating and higher Q_g; body diode slightly slower but still ZVS-capable	Suitable for non-critical ZVS or hard-switched PFC where lower cost and broad distributor availability are priorities.

Compared with STW38N60M2 and IXFH38N60P, IRFPS38N60LPBF offers the highest dV/dt immunity (19 V/ns) and fastest documented body diode recovery (170 ns), making it the preferred choice for tightly controlled ZVS timing in high-frequency resonant converters where reliability under transient stress is non-negotiable.

Availability

IRFPS38N60LPBF is available at Aetrix Electronics and suitable for telecom rectifier modules, server power supply primary switches, and industrial UPS inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for IRFPS38N60LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The IRFPS38N60LPBF belongs to Vishay's high-voltage Super Junction MOSFET product line, designed specifically for high-efficiency, high-power-density switched-mode power supplies operating above 300 V DC input.

FAQ

What is the maximum continuous drain current rating for IRFPS38N60LPBF at 100 °C case temperature?

The IRFPS38N60LPBF supports 24 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and ensures safe operation under sustained high-power conditions without exceeding T_J(max) = 150 °C. Designers must verify heatsink sizing using R_thJC = 0.22 °C/W and ambient conditions.

Does IRFPS38N60LPBF have a lead (Pb)-free and halogen-free construction?

Yes, IRFPS38N60LPBF is lead (Pb)-free and halogen-free, compliant with RoHS Directive 2011/65/EU and Vishay's material categorization per document 99912. The device uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount assembly.

What is the typical gate-source threshold voltage (V_GS(th)) range for IRFPS38N60LPBF?

The IRFPS38N60LPBF has a gate-source threshold voltage range of 3.0 V to 5.0 V at T_J = 25 °C and I_D = 250 μA. This elevated V_GS(th) improves noise immunity in electrically noisy power systems and reduces risk of unintended turn-on due to gate voltage coupling or ground bounce.

Can IRFPS38N60LPBF be used in avalanche mode for circuit protection?

Yes, IRFPS38N60LPBF is rated for both repetitive avalanche (I_AR = 38 A) and single-pulse avalanche (E_AS = 680 mJ), enabling use in circuits where inductive energy must be safely clamped without external components. However, avalanche operation must remain within SOA limits and should be validated per application-specific stress profiles.

What is the recommended gate resistor value for IRFPS38N60LPBF in a 100 kHz ZVS LLC resonant converter?

A gate resistor of 4.3 Ω is used in Vishay's reference switching time test (Fig. 11a), yielding t_d(on) = 44 ns and t_f = 69 ns. For 100 kHz ZVS LLC operation, 4.3–10 Ω is typical: lower values improve switching speed but increase EMI risk; higher values damp ringing but extend dead-time losses. Layout-dependent parasitics require empirical tuning.

IRFPS38N60LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 320 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 540W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS38N60LPBF FAQ

1.How can I place an order for IRFPS38N60LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS38N60LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS38N60LPBF reliable?

The price and inventory of IRFPS38N60LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS38N60LPBF is usually 5 days.

3.What payment methods are accepted for IRFPS38N60LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS38N60LPBF transactions.

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4.How is shipping managed for IRFPS38N60LPBF?

IRFPS38N60LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS38N60LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS38N60LPBF?

For technical support, including IRFPS38N60LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS38N60LPBF requirements.

6.How does Aetrix verify that IRFPS38N60LPBF is sourced from the original manufacturer or authorized distributors?

All IRFPS38N60LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS38N60LPBF meets industry standards.

7.What is the process for return or replacement of IRFPS38N60LPBF?

All IRFPS38N60LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS38N60LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS38N60LPBF part is unused and in its original packaging.

Return procedure for IRFPS38N60LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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