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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS40N60K

Name: IRFPS40N60K
Brand: Vishay Siliconix
SKU: IRFPS40N60K
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS40N60K

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS40N60K.pdf

Description:: MOSFET N-CH 600V 40A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS40N60K from Vishay Siliconix is a 600 V, 40 A N-channel enhancement-mode Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 0.110 Ω at V_GS = 10 V, Q_g = 330 nC, and avalanche-rated operation for hard-switching PFC and SMPS primary-side applications.

For engineers reviewing the IRFPS40N60K datasheet, IRFPS40N60K pinout, IRFPS40N60K application, or IRFPS40N60K equivalent, this device is selected for high-voltage, high-current switching where ruggedness against dV/dt stress, unclamped inductive energy, and body diode recovery performance are critical design requirements.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for 600 V operation with fully characterized C_iss, C_oss, and C_rss (7970 pF, 750 pF, 75 pF at V_DS = 25 V), enabling accurate snubber and gate drive design. Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures stable turn-on under wide temperature and supply variation.

The device supports repetitive avalanche current up to 40 A and single-pulse EAS = 600 mJ, with enhanced body diode dV/dt capability (7.5 V/ns) and trr = 630–950 ns at T_J = 25 °C - key for minimizing commutation losses in bridge and PFC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified systems with ≥20 % margin for line surges and ringing.
R_DS(on) max	0.130 Ω at V_GS = 10 V, I_D = 24 A - determines conduction loss in continuous high-current operation.
Q_g	330 nC - defines total gate charge required for full turn-on; impacts gate driver power and switching speed trade-off.
EAS	600 mJ - enables reliable unclamped inductive switching without external snubbers in flyback or LLC resonant designs.
dV/dt rating	7.5 V/ns - ensures immunity to false turn-on during high-speed voltage transients in high-frequency converters.
T_J range	−55 °C to +150 °C - supports industrial and telecom power supplies operating under extended thermal conditions.
R_thJC	0.22 °C/W - enables high-power dissipation (570 W at T_C = 25 °C) with minimal junction-to-case thermal penalty.

Pinout & Package

IRFPS40N60K is housed in the Super-247 (TO-274AA) package - a high-voltage, high-current variant of TO-247 with reinforced creepage/clearance and optimized thermal path to heatsink via case (drain-connected tab).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires low-impedance drive due to 330 nC Q_g.
D (Drain)	High-side power output	Connected to drain-source high-voltage node (up to 600 V); electrically tied to metal tab for thermal conduction and grounding reference.
S (Source)	Power return / reference	Serves as current return path and gate drive reference; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	Q_gd/Q_g = 45 % - improves Miller immunity and enables faster, more controllable turn-off in hard-switched topologies.
Fully characterized C_oss eff.	260 pF (V_DS = 0–480 V) - allows precise calculation of turn-off energy and resonant timing in ZVS/ZCS circuits.
Enhanced body diode dV/dt	7.5 V/ns - reduces risk of parasitic turn-on during reverse recovery in synchronous rectification or half-bridge configurations.
Avalanche ruggedness	600 mJ single-pulse EAS - eliminates need for external clamping in inductive load switching, simplifying layout and BOM.
Thermal resistance	R_thJC = 0.22 °C/W - supports >500 W continuous dissipation with standard heatsinking, reducing thermal derating overhead.

Applications

Hard-Switching PFC Boost Stage	Industrial SMPS Primary Switch
Use Scenario: Continuous conduction mode (CCM) boost converter operating at 65–100 kHz with 400 V DC bus and 3–5 kW output. IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling full input current and blocking full bus voltage during off-state. Use Value: Low R_DS(on) minimizes conduction loss at high average current; high EAS withstands inductor energy dump during fault events.	Use Scenario: 3 kW telecom rectifier using double-ended forward or half-bridge topology with 380–400 V DC input. IC Role / Device Role / Timing Role: Primary-side switching element subjected to 600 V blocking and fast dV/dt transitions during PWM edge transitions. Use Value: 7.5 V/ns dV/dt rating prevents spurious turn-on; low Q_g enables efficient gate drive at 100+ kHz switching frequencies.
UPS Inverter Half-Bridge	Motor Drive High-Side Switch
Use Scenario: Online UPS delivering clean 230 V AC output using IGBT/MOSFET-based H-bridge inverter stage. IC Role / Device Role / Timing Role: High-side switch in leg configuration, subject to shoot-through risk and body diode reverse recovery stress. Use Value: Fast, soft body diode (trr = 630–950 ns, Q_rr = 14–20 μC) reduces cross-conduction loss and EMI during commutation.	Use Scenario: 7.5 kW three-phase inverter for HVAC compressor drive operating at 8–16 kHz PWM frequency. IC Role / Device Role / Timing Role: High-voltage phase-leg switch handling motor back-EMF and regenerative current during braking. Use Value: Repetitive avalanche rating (I_AR = 40 A) tolerates inductive kickback without failure; R_thJC = 0.22 °C/W sustains thermal stability under burst-load conditions.

Hard-Switching PFC Boost Stage

Industrial SMPS Primary Switch

Use Scenario: Continuous conduction mode (CCM) boost converter operating at 65–100 kHz with 400 V DC bus and 3–5 kW output.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling full input current and blocking full bus voltage during off-state.

Use Value: Low R_DS(on) minimizes conduction loss at high average current; high EAS withstands inductor energy dump during fault events.

Use Scenario: 3 kW telecom rectifier using double-ended forward or half-bridge topology with 380–400 V DC input.

IC Role / Device Role / Timing Role: Primary-side switching element subjected to 600 V blocking and fast dV/dt transitions during PWM edge transitions.

Use Value: 7.5 V/ns dV/dt rating prevents spurious turn-on; low Q_g enables efficient gate drive at 100+ kHz switching frequencies.

UPS Inverter Half-Bridge

Motor Drive High-Side Switch

Use Scenario: Online UPS delivering clean 230 V AC output using IGBT/MOSFET-based H-bridge inverter stage.

IC Role / Device Role / Timing Role: High-side switch in leg configuration, subject to shoot-through risk and body diode reverse recovery stress.

Use Value: Fast, soft body diode (trr = 630–950 ns, Q_rr = 14–20 μC) reduces cross-conduction loss and EMI during commutation.

Use Scenario: 7.5 kW three-phase inverter for HVAC compressor drive operating at 8–16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-voltage phase-leg switch handling motor back-EMF and regenerative current during braking.

Use Value: Repetitive avalanche rating (I_AR = 40 A) tolerates inductive kickback without failure; R_thJC = 0.22 °C/W sustains thermal stability under burst-load conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.085 Ω (lower), Q_g = 220 nC (lower), but EAS = 420 mJ (30 % lower than IRFPS40N60K)	Better conduction efficiency at light loads; less robust in unclamped inductive switching	Prefer when gate drive loss dominates and avalanche stress is low; verify snubber sizing if replacing IRFPS40N60K in PFC.
IXFH40N60P	R_DS(on) = 0.135 Ω (higher), Q_g = 360 nC (higher), but trr = 550 ns (faster) and R_thJC = 0.20 °C/W (slightly better)	Superior body diode recovery for high-frequency bridge use; slightly higher conduction loss	Prefer in high-dV/dt, high-frequency inverter legs where diode softness matters most; confirm thermal margin with higher R_DS(on).

Compared with STW48N60M2 and IXFH40N60P, IRFPS40N60K offers the highest single-pulse avalanche energy (600 mJ) and balanced Q_g/R_DS(on) for primary-side SMPS and PFC, making it optimal where system-level ruggedness outweighs marginal conduction or switching loss improvements.

Availability

IRFPS40N60K is available at Aetrix Electronics and suitable for uninterruptible power supplies, industrial switch-mode power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFPS40N60K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, sensing, and signal conditioning applications.

The IRFPS40N60K belongs to Vishay's high-voltage Super-247 Power MOSFET family, engineered for rugged, high-efficiency switching in industrial, telecom, and renewable energy power conversion systems.

FAQ

What is the maximum continuous drain current rating for IRFPS40N60K at 100 °C case temperature?

The IRFPS40N60K supports a continuous drain current of 24 A at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the Super-247 package and ensures safe operation within R_thJC = 0.22 °C/W and maximum junction temperature of 150 °C. Designers must verify heatsink interface resistance and ambient airflow to maintain this rating in real-world conditions.

Does IRFPS40N60K have a fully characterized body diode, and what are its key recovery parameters?

Yes, IRFPS40N60K features a fully characterized intrinsic body diode with trr = 630–950 ns (T_J = 25 °C), Q_rr = 14–20 μC, and peak recovery current I_RRM = 39–58 A. These values are measured under standardized conditions (I_F = 38 A, dI/dt = 100 A/μs) and directly impact commutation loss and EMI in bridge topologies - making them essential for accurate simulation and layout optimization.

Can IRFPS40N60K be used as a direct replacement for IRFP460 in existing designs?

No, IRFPS40N60K is not a direct replacement for IRFP460. While both are N-channel MOSFETs in TO-247 packages, IRFP460 is rated for 500 V and 20 A with R_DS(on) = 0.27 Ω, whereas IRFPS40N60K is 600 V/40 A with R_DS(on) = 0.110 Ω. Differences in gate charge (330 nC vs. 180 nC), capacitance profile, and avalanche capability require revalidation of gate drive strength, snubber design, and thermal management before substitution.

What is the gate-source voltage limit for IRFPS40N60K, and why is it important for reliability?

The IRFPS40N60K specifies a gate-source voltage limit of ±30 V. Exceeding +30 V risks permanent gate oxide damage, while exceeding −30 V may cause gate punch-through. This rating is critical for gate driver selection - especially in high-noise environments - and mandates proper clamping (e.g., Zener diodes) and layout practices to suppress ringing and overshoot during fast switching transitions.

How does the effective output capacitance (Coss eff.) of IRFPS40N60K affect zero-voltage switching (ZVS) design?

The IRFPS40N60K has C_{oss eff.} = 260 pF across V_DS = 0–480 V, which directly determines the energy required to discharge the drain capacitance before turn-on in ZVS circuits. This value enables precise calculation of resonant tank design and minimum required dead time - ensuring reliable soft-switching down to 480 V bus levels without excessive circulating current or voltage spikes.

IRFPS40N60K Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 570W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS40N60K FAQ

1.How can I place an order for IRFPS40N60K through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS40N60K on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS40N60K reliable?

The price and inventory of IRFPS40N60K are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS40N60K is usually 5 days.

3.What payment methods are accepted for IRFPS40N60K?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS40N60K transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS40N60K?

IRFPS40N60K orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS40N60K order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS40N60K?

For technical support, including IRFPS40N60K datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS40N60K requirements.

6.How does Aetrix verify that IRFPS40N60K is sourced from the original manufacturer or authorized distributors?

All IRFPS40N60K products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS40N60K meets industry standards.

7.What is the process for return or replacement of IRFPS40N60K?

All IRFPS40N60K units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS40N60K, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS40N60K part is unused and in its original packaging.

Return procedure for IRFPS40N60K:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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