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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFPS40N60KPBF

Name: IRFPS40N60KPBF
Brand: Vishay Siliconix
SKU: IRFPS40N60KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS40N60KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS40N60KPBF.pdf

Description:: MOSFET N-CH 600V 40A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS40N60KPBF from Vishay Siliconix is a 600 V, 40 A N-channel power MOSFET in Super-247 (TO-274AA) package, optimized for hard-switching primary and PFC stages in high-efficiency SMPS and UPS systems, with R_DS(on) = 0.110 Ω at V_GS = 10 V, Q_g = 330 nC, and avalanche-rated E_AS = 600 mJ.

For engineers reviewing the IRFPS40N60KPBF datasheet, IRFPS40N60KPBF pinout, IRFPS40N60KPBF application, or IRFPS40N60KPBF equivalent, this page delivers verified electrical specs, thermal resistance data (R_thJC = 0.22 °C/W), body diode recovery metrics (t_rr = 630–950 ns), and real-world switching performance under 480 V bus conditions.

Technical Context

This MOSFET employs planar high-voltage silicon technology with fully characterized C_iss (7970 pF), C_oss (750 pF), and C_rss (75 pF) to support precise gate drive design and snubberless operation in resonant and hard-switched topologies. Its enhanced dV/dt ruggedness (7.5 V/ns peak diode recovery) and low Q_gd/Q_g ratio (150/330 nC) improve noise immunity and reduce Miller-induced turn-on risk.

The device features a robust intrinsic body diode with t_rr = 630 ns (T_J = 25 °C), Q_rr = 14–20 μC, and I_RRM = 39–58 A - enabling reliable freewheeling in bridge-leg configurations without external anti-parallel diodes in many PFC and motor drive designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC input rectified to ~560 V DC bus with margin for line surges and ringing.
R_DS(on)	0.110 Ω @ V_GS = 10 V - enables <1.0 W conduction loss at 30 A, critical for >95% efficiency in 1–3 kW SMPS.
Q_g	330 nC - dictates gate driver current requirement (~1.65 A avg. for 200 ns turn-on with 5 V swing).
E_AS	600 mJ - allows unclamped inductive switching survival up to I_AS = 38 A with L = 0.84 mH, simplifying layout in flyback/PFC.
t_r/t_f	110 ns / 60 ns @ V_DD = 300 V, I_D = 38 A - defines minimum practical switching frequency (<500 kHz) before losses dominate.
R_thJC	0.22 °C/W - enables 570 W dissipation at ΔT = 125 °C, supporting high-power density heatsink designs.
V_GS(th)	3.0–5.0 V - ensures clean turn-on with standard 12 V gate drivers while avoiding false triggering from noise.

Pinout & Package

IRFPS40N60KPBF uses the Super-247 (TO-274AA) package: isolated metal tab (drain), 3-pin through-hole outline with 5.45 mm lead pitch, JEDEC-compliant footprint, and tin-plated leads. Thermal path optimized via direct drain-to-heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab - must be mounted to heatsink with electrically insulating but thermally conductive interface.
Gate	Control electrode	High-impedance input requiring low-inductance gate loop; sensitive to dV/dt coupling - layout must minimize trace length to driver.
Source	Reference node for gate drive and current sensing	Serves as common return for load current and gate drive; critical for stable switching - requires low-impedance Kelvin connection in high-di/dt applications.

Key Features

Feature	Design Value
Low Q_g (330 nC)	Reduces gate driver power consumption and enables use of cost-effective 1–2 A peak drivers in 1–3 kW systems.
Enhanced dV/dt ruggedness (7.5 V/ns)	Prevents spurious turn-on during fast voltage transients in high-side switching, eliminating need for negative gate bias in many designs.
Fully characterized C_oss and Q_rr	Enables accurate soft-switching timing prediction and snubber design for ZVS/ZCS topologies like LLC and phase-shifted full-bridge.
Avalanche-rated (E_AS = 600 mJ)	Supports robust operation in unclamped inductive switching events without external clamping circuits - reduces BOM count and layout complexity.
Improved body diode recovery (t_rr ≤ 950 ns)	Lowers switching losses and EMI in synchronous rectification and half-bridge freewheeling, especially at 100–300 kHz.

Applications

Industrial Switch Mode Power Supply	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 2–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz with universal AC input. IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling full DC bus voltage and load current in hard-switched forward or LLC resonant converters. Use Value: Low R_DS(on) and controlled Q_g enable >96% efficiency at full load while maintaining thermal headroom on compact heatsinks.	Use Scenario: Bidirectional PFC and inverter stage in online double-conversion UPS systems with 400–800 V DC link. IC Role / Device Role / Timing Role: Fast-turning, avalanche-tolerant switch managing energy flow between battery bank and AC output during transfer and boost modes. Use Value: Robust body diode recovery and dV/dt immunity ensure reliable commutation during zero-crossing transitions and fault recovery.
Motor Drive Inverter Stage	High-Speed Induction Heating
Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverters for HVAC compressors and industrial pumps (1–10 kW). IC Role / Device Role / Timing Role: High-side switching device subjected to shoot-through risk and voltage overshoot during PWM commutation. Use Value: High dV/dt rating and low Q_gd suppress Miller-induced false turn-on, reducing need for complex gate drive isolation and dead-time tuning.	Use Scenario: Resonant tank switch in 20–100 kHz induction heating inverters for cooktops and industrial melting systems. IC Role / Device Role / Timing Role: High-frequency, high-current switching element sustaining repetitive 600 V blocking and 40 A conduction in series-resonant topology. Use Value: Predictable C_oss and low switching losses enable stable resonance tracking and >90% power transfer efficiency across load variations.

Industrial Switch Mode Power Supply

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 2–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz with universal AC input.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element handling full DC bus voltage and load current in hard-switched forward or LLC resonant converters.

Use Value: Low R_DS(on) and controlled Q_g enable >96% efficiency at full load while maintaining thermal headroom on compact heatsinks.

Use Scenario: Bidirectional PFC and inverter stage in online double-conversion UPS systems with 400–800 V DC link.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-tolerant switch managing energy flow between battery bank and AC output during transfer and boost modes.

Use Value: Robust body diode recovery and dV/dt immunity ensure reliable commutation during zero-crossing transitions and fault recovery.

Motor Drive Inverter Stage

High-Speed Induction Heating

Use Scenario: Upper-leg switch in 3-phase IGBT/MOSFET inverters for HVAC compressors and industrial pumps (1–10 kW).

IC Role / Device Role / Timing Role: High-side switching device subjected to shoot-through risk and voltage overshoot during PWM commutation.

Use Value: High dV/dt rating and low Q_gd suppress Miller-induced false turn-on, reducing need for complex gate drive isolation and dead-time tuning.

Use Scenario: Resonant tank switch in 20–100 kHz induction heating inverters for cooktops and industrial melting systems.

IC Role / Device Role / Timing Role: High-frequency, high-current switching element sustaining repetitive 600 V blocking and 40 A conduction in series-resonant topology.

Use Value: Predictable C_oss and low switching losses enable stable resonance tracking and >90% power transfer efficiency across load variations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 0.085 Ω (lower), Q_g = 220 nC (lower), TO-247 package, no specified E_AS rating	Better conduction efficiency but less proven avalanche robustness; requires tighter gate drive control due to lower V_GS(th) (2–4 V)	Preferred where thermal budget is tight and layout minimizes dV/dt stress; not recommended for unclamped inductive loads.
IXFH40N60P	R_DS(on) = 0.135 Ω (higher), Q_g = 270 nC (lower), TO-247 package, E_AS = 420 mJ (lower)	Lower gate charge eases drive requirements but higher R_DS(on) increases conduction loss at >20 A; reduced avalanche margin	Suitable for lower-power (<1.5 kW) or lower-duty-cycle applications where gate drive simplicity outweighs efficiency trade-off.

Compared with STW48N60M2 and IXFH40N60P, IRFPS40N60KPBF offers balanced trade-offs: superior avalanche ruggedness for reliability-critical PFC and UPS, moderate Q_g for mainstream gate drivers, and verified body diode recovery for bridge-leg operation - making it a robust choice where field failure risk must be minimized.

Availability

IRFPS40N60KPBF is available at Aetrix Electronics and suitable for industrial switch mode power supplies, uninterruptible power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFPS40N60KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous qualification standards.

The Super-247 power MOSFET product line, including IRFPS40N60KPBF, was engineered for high-efficiency, high-reliability switching in industrial power conversion - emphasizing avalanche tolerance, thermal performance, and consistent parametric distribution across temperature and voltage ranges.

FAQ

What is the maximum continuous drain current rating for IRFPS40N60KPBF at 100 °C case temperature?

The IRFPS40N60KPBF has a continuous drain current rating of 24 A at T_C = 100 °C, derated linearly from 40 A at 25 °C using a factor of 4.5 W/°C. This reflects its thermal limit under sustained conduction, not transient capability - designers must verify junction temperature rise using R_thJC = 0.22 °C/W and actual power dissipation.

Does IRFPS40N60KPBF have a fully characterized body diode, and what are its key recovery parameters?

Yes, IRFPS40N60KPBF includes a fully characterized intrinsic body diode with t_rr = 630–950 ns (T_J = 25–125 °C), Q_rr = 14–25 μC, and I_RRM = 39–58 A. These values are measured under standardized conditions (I_F = 38 A, dI/dt = 100 A/μs) and support reliable freewheeling in half-bridge and synchronous rectifier topologies without external diodes.

What is the gate-source threshold voltage range for IRFPS40N60KPBF, and how does it affect drive compatibility?

The gate-source threshold voltage (V_GS(th)) for IRFPS40N60KPBF is specified as 3.0–5.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 10–12 V gate drivers while providing noise margin against false triggering - unlike logic-level MOSFETs, it does not require 5 V drive, making it compatible with conventional isolated gate drivers used in industrial SMPS.

Can IRFPS40N60KPBF be used in avalanche-mode operation, and what is its single-pulse energy rating?

Yes, IRFPS40N60KPBF is rated for repetitive and single-pulse avalanche operation with E_AS = 600 mJ (single pulse, T_J = 25 °C, L = 0.84 mH, I_AS = 38 A). This rating is validated per JEDEC JESD24-1 and allows safe operation during unclamped inductive switching events - a key advantage over non-avalanche-rated MOSFETs in PFC and flyback designs.

What package type does IRFPS40N60KPBF use, and how does its thermal performance compare to TO-247?

IRFPS40N60KPBF uses the Super-247 (TO-274AA) package, which provides R_thJC = 0.22 °C/W - identical to high-performance TO-247 variants - while offering improved creepage/clearance for 600 V systems. Its isolated metal tab enables direct heatsink mounting without insulating pads, and its JEDEC-compliant outline ensures drop-in compatibility with existing TO-247 PCB footprints in many layouts.

IRFPS40N60KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 130mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 7970 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 570W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS40N60KPBF FAQ

1.How can I place an order for IRFPS40N60KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS40N60KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS40N60KPBF reliable?

The price and inventory of IRFPS40N60KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS40N60KPBF is usually 5 days.

3.What payment methods are accepted for IRFPS40N60KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS40N60KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS40N60KPBF?

IRFPS40N60KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS40N60KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS40N60KPBF?

For technical support, including IRFPS40N60KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS40N60KPBF requirements.

6.How does Aetrix verify that IRFPS40N60KPBF is sourced from the original manufacturer or authorized distributors?

All IRFPS40N60KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS40N60KPBF meets industry standards.

7.What is the process for return or replacement of IRFPS40N60KPBF?

All IRFPS40N60KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS40N60KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS40N60KPBF part is unused and in its original packaging.

Return procedure for IRFPS40N60KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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