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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010

Name: IRFR010
Brand: Vishay Siliconix
SKU: IRFR010
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR010

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR010 from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 50 V V_DS, 8.2 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching (t_r = 33–50 ns), low gate charge (Q_g = 10 nC max), and robust body diode recovery (trr = 41–190 ns), making it suitable for DC-DC converters and peripheral power switches.

For engineers reviewing the IRFR010 datasheet, IRFR010 pinout, IRFR010 application, or IRFR010 equivalent, key selection considerations include its 50 V breakdown voltage, 0.20 Ω on-resistance at 10 V gate drive, DPAK thermal performance (R_thJC = 5.0 °C/W), and suitability for high-volume surface-mount power switching where limited heatsinking is available.

Technical Context

This device employs Vishay's advanced planar MOSFET process to achieve low R_DS(on) with high transconductance (g_fs = 3.1 S typ) and stable threshold voltage (V_GS(th) = 2.0–4.0 V). Its internal structure supports unclamped inductive switching (IAS = 1.5 A) and exhibits linear derating (0.20 W/°C) above 25 °C case temperature.

The integrated body diode features V_SD = 1.6 V at 8.2 A and dV/dt capability of 2.0 V/ns, enabling reliable operation in freewheeling and synchronous rectification roles without external diodes in low-power topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage before avalanche conduction; defines upper limit for input voltage in buck or flyback stages.
R_DS(on) @ V_GS = 10 V	0.20 Ω max - Determines I²R conduction loss at full load; enables <1.4 W loss at 6 A DC.
I_D continuous @ T_C = 25 °C	8.2 A - Maximum steady-state current with adequate heatsinking; usable in 5–12 V output DC-DC stages up to ~50 W.
Q_g	10 nC max - Total gate charge required for full turn-on; sets minimum driver strength and switching loss budget.
t_r / t_f	33–50 ns / 23–35 ns - Rise/fall times under standard test conditions; enables >1 MHz switching in optimized layouts.
R_thJC	5.0 °C/W max - Junction-to-case thermal resistance; allows direct mounting to PCB copper pour or small heatsink for thermal management.
trr	41–190 ns - Body diode reverse recovery time; impacts EMI and losses during hard-commutated freewheeling.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard footprint per Vishay Application Note 826: 6.18 mm × 5.69 mm pad layout with 2.29 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to ground or low-side return path; carries full load current.
Pin 2 (Gate)	Control electrode	High-impedance input requiring ≤500 nA leakage; driven by logic-level or dedicated gate driver to modulate channel conduction.
Pin 3 (Drain)	Power output terminal	Connected to high-side rail or inductive load; electrically tied to exposed metal tab for thermal and electrical conduction.

Key Features

Feature	Design Value
Low drive current requirement	IGSS ≤ ±500 nA at ±20 V gate bias - minimizes quiescent loading on microcontroller GPIO or level-shifted drivers.
Fast switching with low Q_g	Q_g = 10 nC max and t_r/t_f < 50 ns - reduces transition losses and enables higher-frequency operation without excessive driver dissipation.
Robust body diode recovery	trr = 41–190 ns and dV/dt = 2.0 V/ns - supports reliable freewheeling in non-synchronous converters and mitigates voltage overshoot during diode commutation.
Excellent temperature stability	V_GS(th) drift < ±0.5 mV/°C and R_DS(on) increase < 2× from 25 °C to 125 °C - ensures predictable turn-on behavior across industrial temperature range.
Surface-mount DPAK package	TO-252 outline with exposed drain tab - provides lower parasitic inductance than through-hole alternatives and enables automated assembly with high thermal transfer to PCB copper.

Applications

Computer Power Delivery	Telecom DC-DC Modules
Use Scenario: Low-voltage, high-current power rails for CPU core logic or memory subsystems in desktop/laptop motherboards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or hot-swap FET controlling 3.3 V or 5 V distribution. Use Value: 0.20 Ω R_DS(on) limits conduction loss to <0.8 W at 6 A, while DPAK thermal resistance enables direct PCB copper cooling without discrete heatsinks.	Use Scenario: Intermediate bus conversion in telecom line cards, converting –48 V input to +12 V or +5 V for digital signal processors. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck converter operating at 300–500 kHz. Use Value: 10 nC Q_g and 50 ns t_f reduce switching loss to <150 mW at 500 kHz, supporting high efficiency in space-constrained modules.
Consumer Device Battery Protection	Industrial Sensor Power Switching
Use Scenario: Reverse-polarity and overcurrent protection in USB-C PD adapters and portable battery packs. IC Role / Device Role / Timing Role: High-side load switch controlled by protection IC to isolate battery from faulty loads. Use Value: V_GS(th) = 2.0–4.0 V allows direct control from 3.3 V logic; 50 V rating accommodates transient surges up to ±40 V without breakdown.	Use Scenario: Power gating for isolated analog front-ends or wireless transceivers in programmable logic controllers. IC Role / Device Role / Timing Role: Controlled ON/OFF switch enabling rapid power cycling and standby current reduction. Use Value: ID = 8.2 A at 25 °C and TJ range of –55 to +150 °C ensure reliable operation in unventilated enclosures with ambient temperatures up to 70 °C.

Computer Power Delivery

Telecom DC-DC Modules

Use Scenario: Low-voltage, high-current power rails for CPU core logic or memory subsystems in desktop/laptop motherboards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier or hot-swap FET controlling 3.3 V or 5 V distribution.

Use Value: 0.20 Ω R_DS(on) limits conduction loss to <0.8 W at 6 A, while DPAK thermal resistance enables direct PCB copper cooling without discrete heatsinks.

Use Scenario: Intermediate bus conversion in telecom line cards, converting –48 V input to +12 V or +5 V for digital signal processors.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck converter operating at 300–500 kHz.

Use Value: 10 nC Q_g and 50 ns t_f reduce switching loss to <150 mW at 500 kHz, supporting high efficiency in space-constrained modules.

Consumer Device Battery Protection

Industrial Sensor Power Switching

Use Scenario: Reverse-polarity and overcurrent protection in USB-C PD adapters and portable battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlled by protection IC to isolate battery from faulty loads.

Use Value: V_GS(th) = 2.0–4.0 V allows direct control from 3.3 V logic; 50 V rating accommodates transient surges up to ±40 V without breakdown.

Use Scenario: Power gating for isolated analog front-ends or wireless transceivers in programmable logic controllers.

IC Role / Device Role / Timing Role: Controlled ON/OFF switch enabling rapid power cycling and standby current reduction.

Use Value: ID = 8.2 A at 25 °C and TJ range of –55 to +150 °C ensure reliable operation in unventilated enclosures with ambient temperatures up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR010-GE3	Same die, identical R_DS(on), Q_g, and thermal specs; Pb-free halogen-free variant with GE3 suffix.	No functional difference; used where RoHS/REACH compliance requires halogen-free packaging.	Select SiHFR010-GE3 when environmental compliance mandates halogen-free materials; otherwise IRFR010TRRPbF remains fully interchangeable.
IRLR014TRPbF	Higher V_DS (60 V), lower R_DS(on) (0.11 Ω), but larger Q_g (15 nC); same DPAK package and pinout.	Better suited for 24 V input systems or higher-efficiency designs where gate drive capability permits extra charge handling.	Choose IRLR014TRPbF only if system voltage exceeds 50 V or R_DS(on) reduction justifies increased gate drive demand and cost.

Compared with IRFR010, SiHFR010-GE3 offers identical electrical and thermal performance with enhanced environmental compliance, while IRLR014TRPbF trades higher voltage rating and lower on-resistance for greater gate charge-requiring re-evaluation of driver sizing and layout parasitics.

Availability

IRFR010 is available at Aetrix Electronics and suitable for computer power delivery, telecom DC-DC modules, and consumer battery protection requiring stable component supply and long-term manufacturability.

Supply support for IRFR010 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The IRFR010 belongs to Vishay's legacy FR-series power MOSFET family, engineered for cost-sensitive, high-volume surface-mount power switching in computing, telecom, and consumer electronics where thermal efficiency and ease of PCB integration are critical.

FAQ

What is the maximum continuous drain current for IRFR010 at 100 °C case temperature?

The IRFR010 supports 5.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be validated against actual board layout, copper area, and ambient conditions. The IRFR010 data sheet confirms this value under "Continuous drain current" with footnote indicating TC = 100 °C condition.

Does IRFR010 require a gate resistor for safe operation?

While the IRFR010 does not mandate a gate resistor for basic functionality, a series gate resistor (typically 5–24 Ω) is recommended to control dV/dt, suppress ringing, and limit peak gate current during fast switching. The IRFR010 datasheet uses R_g = 24 Ω in switching time tests, confirming its role in stabilizing turn-on/turn-off waveforms and reducing EMI in practical designs.

Can IRFR010 be used in linear (analog) mode operation?

The IRFR010 is characterized and rated for switching applications, not linear mode. Its Safe Operating Area (SOA) curve (Fig. 7) shows limited linear capability-only up to 10 V V_DS at 1 A for pulse widths ≤ 10 ms. Sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on); the IRFR010 is not designed or tested for constant-current or voltage-regulator use.

What is the gate-source leakage current specification for IRFR010?

The IRFR010 specifies gate-source leakage current (I_GSS) as ±500 nA maximum at V_GS = ±20 V and T_J = 25 °C. This low leakage enables compatibility with high-impedance microcontroller outputs and reduces static power draw in always-on control circuits. The value is confirmed in the "Specifications" table under "Gate-source leakage" with test condition explicitly stated.

Is IRFR010 pin-compatible with other TO-252 N-channel MOSFETs like IRLR014?

Yes, IRFR010 and IRLR014 share identical DPAK (TO-252) package dimensions and pinout (G-S-D), making them mechanically interchangeable on PCBs designed for that outline. However, differences in R_DS(on), Q_g, and V_DS mean electrical validation is required before substitution. The IRFR010 datasheet confirms G-S-D terminal assignment matches standard TO-252 orientation.

IRFR010 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR010 FAQ

1.How can I place an order for IRFR010 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010 reliable?

The price and inventory of IRFR010 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010 is usually 5 days.

3.What payment methods are accepted for IRFR010?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010?

IRFR010 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010?

For technical support, including IRFR010 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010 requirements.

6.How does Aetrix verify that IRFR010 is sourced from the original manufacturer or authorized distributors?

All IRFR010 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010 meets industry standards.

7.What is the process for return or replacement of IRFR010?

All IRFR010 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010 part is unused and in its original packaging.

Return procedure for IRFR010:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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