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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010PBF

Name: IRFR010PBF
Brand: Vishay Siliconix
SKU: IRFR010PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR010PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010PBF.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

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Product details

Overview

IRFR010PBF from Vishay Siliconix is a 50 V, 8.2 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, with R_DS(on) = 0.20 Ω at V_GS = 10 V, Q_g = 10 nC, and peak diode recovery dV/dt of 2.0 V/ns. It serves as a high-efficiency switching element in DC-DC converters and low-power motor drives where thermal constraints and fast switching are critical.

For engineers reviewing the IRFR010PBF datasheet, IRFR010PBF pinout, IRFR010PBF application, or IRFR010PBF equivalent, key selection criteria include its 5.0 °C/W junction-to-case thermal resistance, 25 W maximum power dissipation at T_C = 25 °C, body diode reverse recovery time (t_rr) of 41–190 ns, and compatibility with standard DPAK PCB footprints per Vishay's recommended pad layout.

Technical Context

This N-channel enhancement-mode MOSFET uses planar silicon technology optimized for low R_DS(on) and stable transconductance (g_fs = 2.1–3.1 S). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, confirming standard-level-not logic-level-drive requirements.

The device integrates a robust intrinsic body diode rated for 8.2 A continuous source-drain current and exhibits controlled reverse recovery (Q_rr = 0.15–0.78 μC), enabling reliable operation in hard-switched topologies without external snubbers under defined dI/dt limits (≤130 A/μs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage before avalanche conduction; defines use in ≤40 V bus applications with margin.
R_DS(on) @ V_GS = 10 V	0.20 Ω - Conduction loss of 7.5 W at 8.2 A; enables compact thermal design in space-constrained PCBs.
Q_g	10 nC - Gate drive energy requirement; determines driver strength needed for <20 ns turn-on delay (t_d(on) = 11–17 ns).
t_rr	41–190 ns - Body diode recovery window; constrains maximum switching frequency in synchronous rectification.
R_thJC	5.0 °C/W - Thermal path efficiency from die to case; requires direct heatsink contact for >10 W sustained dissipation.
I_D @ T_C = 100 °C	5.2 A - Derated current capability at elevated case temperature; sets practical limit for enclosed industrial environments.
P_D @ T_C = 25 °C	25 W - Maximum steady-state power with ideal heatsinking; usable up to ~15 W on 1" FR-4 PCB per R_thJA = 110 °C/W.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) aligned to JEDEC MO-238 standard; lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V gate drive; input capacitance C_iss = 250 pF dictates RC time constant with driver impedance.
D (Drain)	High-side switched node	Exposed metal tab electrically connected to drain; must be isolated from heatsink unless referenced to same potential.
S (Source)	Reference node / return path	Common connection for load current return and gate drive reference; internal source inductance L_S = 7.5 nH affects switching waveform ringing.

Key Features

Feature	Design Value
Low R_DS(on) with high g_fs	0.20 Ω + 3.1 S enables high current density and tight V_GS control over temperature.
Fast switching with low Q_g	10 nC total gate charge supports 500 kHz+ operation with minimal driver losses.
Robust body diode recovery	2.0 V/ns dV/dt rating and 130 A/μs dI/dt tolerance allow unclamped inductive switching without failure.
Temperature-stable parameters	V_GS(th) shift < ±0.5 mV/°C and R_DS(on) variation < 2× from -55 °C to +150 °C ensure consistent performance across environments.
Surface-mount thermal efficiency	DPAK footprint reduces parasitic inductance vs. through-hole packages, improving EMI and transient response in SMPS designs.

Applications

DC-DC Buck Converter	Low-Voltage Motor Driver
Use Scenario: Step-down regulation from 12 V or 24 V input to 3.3 V/5 V rails in networking equipment. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with forced PWM mode. Use Value: Low Q_g and R_DS(on) minimize conduction and switching losses, achieving >92% efficiency at 5 A output.	Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motors in printers or HVAC actuators. IC Role / Device Role / Timing Role: Low-side switching element with freewheeling path provided by integrated body diode during PWM off-time. Use Value: 8.2 A continuous current and 33 A pulsed rating support stall-current surges; t_rr < 190 ns prevents shoot-through during commutation.
Telecom Power Supply	Consumer USB-C PD Adapter
Use Scenario: Primary-side switch in 48 V input telecom rectifiers delivering 12 V/10 A outputs. IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter topology with clamp winding. Use Value: 50 V V_DS rating provides margin against reflected transients; R_thJC = 5.0 °C/W allows direct heatsink mounting for 20 W dissipation.	Use Scenario: Secondary-side synchronous rectifier in 20–65 W USB-C power adapters. IC Role / Device Role / Timing Role: Low-side rectifier replacing Schottky diode to reduce forward drop and improve light-load efficiency. Use Value: V_SD = 1.6 V body diode drop and Q_rr = 0.33 μC typical enable clean zero-voltage switching transitions at 100–200 kHz.

DC-DC Buck Converter

Low-Voltage Motor Driver

Use Scenario: Step-down regulation from 12 V or 24 V input to 3.3 V/5 V rails in networking equipment.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with forced PWM mode.

Use Value: Low Q_g and R_DS(on) minimize conduction and switching losses, achieving >92% efficiency at 5 A output.

Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motors in printers or HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element with freewheeling path provided by integrated body diode during PWM off-time.

Use Value: 8.2 A continuous current and 33 A pulsed rating support stall-current surges; t_rr < 190 ns prevents shoot-through during commutation.

Telecom Power Supply

Consumer USB-C PD Adapter

Use Scenario: Primary-side switch in 48 V input telecom rectifiers delivering 12 V/10 A outputs.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in forward converter topology with clamp winding.

Use Value: 50 V V_DS rating provides margin against reflected transients; R_thJC = 5.0 °C/W allows direct heatsink mounting for 20 W dissipation.

Use Scenario: Secondary-side synchronous rectifier in 20–65 W USB-C power adapters.

IC Role / Device Role / Timing Role: Low-side rectifier replacing Schottky diode to reduce forward drop and improve light-load efficiency.

Use Value: V_SD = 1.6 V body diode drop and Q_rr = 0.33 μC typical enable clean zero-voltage switching transitions at 100–200 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR010-GE3	Same die, identical R_DS(on), Q_g, and thermal specs; Pb-free/halogen-free variant with GE3 suffix.	No functional difference; preferred for RoHS-compliant production requiring full material compliance documentation.	Select SiHFR010-GE3 when full halogen-free certification and traceability per Vishay Doc. 99912 are required.
IRFR020PBF	Higher V_DS = 60 V, higher R_DS(on) = 0.30 Ω, larger Q_g = 14 nC; otherwise identical DPAK package and pinout.	Used where 50 V margin is insufficient (e.g., 48 V systems with high line transients); trades efficiency for voltage headroom.	Choose IRFR020PBF only if system max V_DS exceeds 45 V; IRFR010PBF remains optimal for ≤40 V nominal buses.

Compared with SiHFR010-GE3, IRFR010PBF offers identical electrical performance but lacks halogen-free certification; versus IRFR020PBF, it delivers lower conduction loss and faster switching at the cost of reduced voltage rating-making IRFR010PBF the preferred choice for thermally constrained 12–24 V applications demanding high efficiency.

Availability

IRFR010PBF is available at Aetrix Electronics and suitable for DC-DC converters, low-voltage motor drivers, and telecom power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFR010PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR010PBF belongs to Vishay's legacy "IR" power MOSFET family designed for cost-sensitive, high-volume surface-mount power switching applications with emphasis on thermal efficiency and ease of PCB assembly.

FAQ

What is the gate threshold voltage range for IRFR010PBF?

The IRFR010PBF has a gate-source threshold voltage (V_GS(th)) ranging from 2.0 V to 4.0 V at I_D = 250 μA. This standard-level threshold requires a minimum 5 V gate drive for reliable enhancement-mode turn-on, and full enhancement is achieved at V_GS = 10 V-where the device delivers its specified R_DS(on) of 0.20 Ω. The IRFR010PBF is not a logic-level MOSFET.

Can IRFR010PBF be used in parallel configurations?

Yes, the IRFR010PBF is explicitly designed for paralleling, as confirmed by Vishay's datasheet features including "Ease of paralleling" and positive temperature coefficient of R_DS(on). Its transconductance stability and matched threshold voltage distribution across production lots allow current sharing without external ballast resistors-provided gate drive impedance and PCB layout symmetry are maintained for each IRFR010PBF in the array.

What is the maximum junction temperature and how does it affect IRFR010PBF derating?

The IRFR010PBF has an operating junction temperature range of -55 °C to +150 °C. At T_J = 150 °C, the continuous drain current derates to 5.2 A (from 8.2 A at 25 °C), following a linear derating factor of 0.20 W/°C. This means power dissipation must be limited to maintain T_J ≤ 150 °C-e.g., with R_thJC = 5.0 °C/W, 25 W at T_C = 25 °C corresponds to ΔT = 125 °C, matching the allowable margin.

Does IRFR010PBF include an integrated body diode, and what are its key ratings?

Yes, the IRFR010PBF integrates a monolithic body diode inherent to its vertical N-channel MOSFET structure. Key diode ratings include 8.2 A continuous source-drain current (I_S), 33 A pulsed rating (I_SM), 1.6 V forward voltage (V_SD) at I_S = 8.2 A and T_J = 25 °C, and reverse recovery time (t_rr) of 41–190 ns depending on test conditions. These values make the IRFR010PBF suitable for freewheeling and synchronous rectification roles.

What PCB layout recommendations apply to IRFR010PBF in DPAK package?

Vishay specifies minimum DPAK (TO-252) copper pads: 0.224" × 0.180" (5.69 mm × 4.57 mm) for source, 0.243" × 0.087" (6.18 mm × 2.20 mm) for gate, and full-exposed drain tab (0.420" × 0.224", 10.67 mm × 5.69 mm) with thermal vias to inner ground planes. The IRFR010PBF layout must minimize source inductance (L_S = 7.5 nH) and gate loop area to suppress ringing and ensure stable 17 ns fall time (t_f).

IRFR010PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR010PBF FAQ

1.How can I place an order for IRFR010PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010PBF reliable?

The price and inventory of IRFR010PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010PBF is usually 5 days.

3.What payment methods are accepted for IRFR010PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010PBF?

IRFR010PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010PBF?

For technical support, including IRFR010PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010PBF requirements.

6.How does Aetrix verify that IRFR010PBF is sourced from the original manufacturer or authorized distributors?

All IRFR010PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010PBF meets industry standards.

7.What is the process for return or replacement of IRFR010PBF?

All IRFR010PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010PBF part is unused and in its original packaging.

Return procedure for IRFR010PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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