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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010PBF-BE3

Name: IRFR010PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR010PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR010PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010PBF-BE3.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

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Product details

Overview

IRFR010PBF-BE3 from Vishay Siliconix is a 50 V, 8.2 A N-channel power MOSFET in DPAK (TO-252) surface-mount package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 10 nC total gate charge, and 2.0 V/ns peak diode recovery dV/dt - optimized for DC-DC converters, motor control, and low-heat-dissipation computing peripherals.

For engineers reviewing the IRFR010PBF-BE3 datasheet, IRFR010PBF-BE3 pinout, IRFR010PBF-BE3 application, or IRFR010PBF-BE3 equivalent, key selection criteria include its 5.0 °C/W junction-to-case thermal resistance, 25 W maximum power dissipation at T_C = 25 °C, fast 11–17 ns turn-on delay, and compatibility with standard DPAK PCB footprints per Vishay document 71197.

Technical Context

This discrete N-channel enhancement-mode MOSFET uses planar silicon technology with optimized geometry to achieve low on-resistance and high transconductance (3.1 S typ.). Its integral body diode supports unclamped inductive switching with 1.5 A avalanche current rating and 86 ns typical reverse recovery time at 7.3 A.

The device operates across -55 °C to +150 °C junction temperature range and is rated for ±20 V gate-source voltage. It delivers stable performance under pulsed drain currents up to 33 A and exhibits excellent temperature stability of R_DS(on), with normalized resistance remaining ≤1.4× at 125 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - maximum blocking voltage for low-voltage power switching in 3.3 V/5 V/12 V systems
R_DS(on) @ V_GS = 10 V	0.20 Ω max - enables <1.7 W conduction loss at 8.2 A continuous drain current
Q_g	10 nC max - determines gate drive energy requirement and switching speed in PWM circuits
I_D (continuous) @ T_C = 25 °C	8.2 A - usable continuous current when mounted on heatsink or thermally enhanced PCB
R_thJC	5.0 °C/W max - defines thermal path efficiency from die to case, critical for thermal design margin
dV/dt (diode recovery)	2.0 V/ns - ensures robustness against parasitic turn-on during inductive flyback transitions
T_J range	-55 to +150 °C - supports operation in industrial and automotive ambient environments

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standardized footprint per Vishay document 71197 (Version 1 & 2), compatible with IPC-7351B DPAK land pattern.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Source (S)	Low-side return path; tied to internal source metallization and outer lead frame
Pin 2 (Lead)	Gate (G)	Control terminal; requires 2.0–4.0 V threshold voltage to initiate conduction
Pin 3 (Exposed Pad)	Drain (D)	Main power terminal and thermal interface; electrically connected to die drain and PCB copper pour

Key Features

Feature	Design Value
Low drive current requirement	2.6 nC Q_gs enables direct drive from microcontrollers without external buffer stages
Fast switching performance	11–17 ns t_d(on) and 23–35 ns t_f support >500 kHz PWM in SMPS designs
Ease of paralleling	Positive temperature coefficient of R_DS(on) ensures self-balancing current sharing across multiple devices
Superior diode recovery dV/dt	2.0 V/ns rating prevents spurious turn-on during hard commutation in half-bridge topologies
Surface-mount optimization	DPAK package reduces stray inductance vs. through-hole alternatives, improving EMI and transient response

Applications

DC-DC Converters	Motor Control (Small Actuators)
Use Scenario: Synchronous buck converter in point-of-load regulation for FPGA or ASIC core supplies. IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage, conducting during freewheeling phase. Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 5–8 A load currents, while 10 nC Q_g enables efficient 300–600 kHz switching.	Use Scenario: H-bridge driver for 12 V brushed DC motors in printers, scanners, or HVAC dampers. IC Role / Device Role / Timing Role: One quadrant switch controlling direction and PWM duty cycle via gate voltage modulation. Use Value: 8.2 A continuous current rating handles stall conditions; 1.6 V body diode forward drop supports efficient flyback energy recirculation.
Computing Peripherals	Telecom Power Management
Use Scenario: Hot-swap OR-ing FET and power sequencing in USB-C PD adapters or docking stations. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input and system rail. Use Value: 50 V V_DS withstands input surge transients; 25 W P_D allows short-duration inrush current handling without derating.	Use Scenario: Intermediate bus switch in telecom line cards requiring 48 V input conditioning and isolation. IC Role / Device Role / Timing Role: High-side or low-side power distribution switch enabling remote ON/OFF control and fault isolation. Use Value: -55 to +150 °C operating range meets NEBS Level 3 requirements; 110 °C/W R_thJA supports natural-convection cooling in dense layouts.

DC-DC Converters

Motor Control (Small Actuators)

Use Scenario: Synchronous buck converter in point-of-load regulation for FPGA or ASIC core supplies.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectification stage, conducting during freewheeling phase.

Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 5–8 A load currents, while 10 nC Q_g enables efficient 300–600 kHz switching.

Use Scenario: H-bridge driver for 12 V brushed DC motors in printers, scanners, or HVAC dampers.

IC Role / Device Role / Timing Role: One quadrant switch controlling direction and PWM duty cycle via gate voltage modulation.

Use Value: 8.2 A continuous current rating handles stall conditions; 1.6 V body diode forward drop supports efficient flyback energy recirculation.

Computing Peripherals

Telecom Power Management

Use Scenario: Hot-swap OR-ing FET and power sequencing in USB-C PD adapters or docking stations.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input and system rail.

Use Value: 50 V V_DS withstands input surge transients; 25 W P_D allows short-duration inrush current handling without derating.

Use Scenario: Intermediate bus switch in telecom line cards requiring 48 V input conditioning and isolation.

IC Role / Device Role / Timing Role: High-side or low-side power distribution switch enabling remote ON/OFF control and fault isolation.

Use Value: -55 to +150 °C operating range meets NEBS Level 3 requirements; 110 °C/W R_thJA supports natural-convection cooling in dense layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR010-GE3	Same die, halogen-free and Pb-free per JEDEC J-STD-020; identical R_DS(on), Q_g, and thermal specs	No functional difference; preferred for RoHS-compliant manufacturing	Select SiHFR010-GE3 when full halogen-free compliance is required per IEC 61249-2-21
IRFR020PBF	Higher 100 V V_DS, 0.33 Ω R_DS(on), 14 nC Q_g; larger die size increases R_thJC to 6.0 °C/W	Supports higher bus voltages but sacrifices conduction efficiency and thermal performance at 50 V operation	Choose IRFR020PBF only if 100 V rating is mandatory; IRFR010PBF-BE3 offers superior efficiency below 60 V

Compared with SiHFR010-GE3, IRFR010PBF-BE3 shares identical electrical and thermal behavior but differs in packaging specification (BE3 tape-and-reel vs. GE3); versus IRFR020PBF, it delivers 39% lower R_DS(on) and 29% less gate charge at the cost of 50 V rating - making it optimal for compact, high-efficiency 12–48 V systems.

Availability

IRFR010PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and telecom power management systems requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for IRFR010PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The IRFR010PBF-BE3 belongs to Vishay's legacy "FR" series of surface-mount power MOSFETs designed specifically for high-volume, space-constrained applications where low R_DS(on), fast switching, and DPAK manufacturability are critical.

FAQ

What is the maximum continuous drain current rating for IRFR010PBF-BE3 at 100 °C case temperature?

The IRFR010PBF-BE3 has a continuous drain current rating of 5.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied when heatsinking is limited or ambient temperatures exceed 70 °C. The full 8.2 A rating applies only at T_C = 25 °C with adequate thermal management.

Does IRFR010PBF-BE3 have a built-in body diode, and what are its key characteristics?

Yes, IRFR010PBF-BE3 integrates a monolithic body diode with 8.2 A continuous forward current capability, 1.6 V forward voltage at 8.2 A and 25 °C, and 86 ns typical reverse recovery time at 7.3 A. Its 2.0 V/ns peak dV/dt rating ensures robustness in inductive switching applications such as motor drives and synchronous rectifiers.

What is the gate threshold voltage range for IRFR010PBF-BE3, and how does it affect drive compatibility?

The gate threshold voltage (V_GS(th)) for IRFR010PBF-BE3 is 2.0 V to 4.0 V at T_J = 25 °C. This places it in the standard-level MOSFET category - fully enhanced at 10 V gate drive, but not logic-level compatible with 3.3 V microcontrollers without level-shifting. For direct 3.3 V drive, consider Vishay's SiHF010N series instead.

Can IRFR010PBF-BE3 be used in parallel configurations, and what design considerations apply?

Yes, IRFR010PBF-BE3 is explicitly designed for paralleling due to its positive temperature coefficient of R_DS(on), which promotes natural current balancing. To ensure stability, use matched gate resistors (≤25 Ω), minimize layout asymmetry in source paths, and maintain uniform thermal coupling across devices - e.g., shared copper pour on the drain pad.

What is the thermal resistance from junction to ambient (R_thJA) for IRFR010PBF-BE3, and how should it be interpreted in PCB design?

The maximum R_thJA for IRFR010PBF-BE3 is 110 °C/W, measured on a 1" square FR-4 PCB per JEDEC standards. This value assumes minimal copper area and no heatsink - actual performance improves significantly with extended drain-pad copper pours. For production designs, use R_thJC = 5.0 °C/W and model heatsink or PCB thermal path separately for accurate junction temperature prediction.

IRFR010PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR010PBF-BE3 FAQ

1.How can I place an order for IRFR010PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010PBF-BE3 reliable?

The price and inventory of IRFR010PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR010PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010PBF-BE3?

IRFR010PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010PBF-BE3?

For technical support, including IRFR010PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010PBF-BE3 requirements.

6.How does Aetrix verify that IRFR010PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR010PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR010PBF-BE3?

All IRFR010PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR010PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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