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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010TRL

Name: IRFR010TRL
Brand: Vishay Siliconix
SKU: IRFR010TRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR010TRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010TRL.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

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Product details

Overview

IRFR010TRL from Vishay Siliconix is a 50 V, 8.2 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 10 nC total gate charge, and 2.0 V/ns peak diode recovery dV/dt - optimized for DC-DC converters and low-heat-dissipation switching in computing peripherals and telecom equipment.

For engineers reviewing the IRFR010TRL datasheet, IRFR010TRL pinout, IRFR010TRL application, or IRFR010TRL equivalent, key selection criteria include its 5.0 °C/W junction-to-case thermal resistance, 25 W maximum power dissipation at T_C = 25 °C, body diode reverse recovery time of 41–190 ns, and compatibility with standard DPAK PCB footprints per Vishay's recommended 10.67 mm × 5.69 mm pad layout.

Technical Context

This device uses Vishay's advanced planar MOSFET process to achieve low on-resistance with high transconductance (g_fs = 3.1 S typ.) and stable electrical parameters over temperature. Its internal drain and source inductances (L_D = 4.5 nH, L_S = 7.5 nH) are specified for accurate switching waveform modeling.

The IRFR010TRL integrates a robust body diode rated for 8.2 A continuous forward current and 33 A pulsed current, with Q_rr = 0.15–0.78 μC and trr = 41–190 ns under defined test conditions - enabling reliable unclamped inductive switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - maximum blocking voltage for 24 V input rail applications with 100 % margin
R_DS(on)	0.20 Ω @ V_GS = 10 V - enables ≤1.7 W conduction loss at 9.3 A peak in 48 V/12 V buck stages
Q_g	10 nC max - determines gate drive power and switching speed in 100–500 kHz SMPS designs
I_D (T_C = 25 °C)	8.2 A continuous - supports medium-power loads without forced airflow on 1" FR-4 PCB
R_thJC	5.0 °C/W max - allows direct heatsinking to metal chassis or copper pour for thermal management
dV/dt (diode)	2.0 V/ns - ensures robustness against parasitic turn-on during high-speed synchronous rectification
V_GS(th)	2.0–4.0 V - compatible with 3.3 V and 5 V logic-level gate drivers without level-shifting

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring; dimensions per Vishay document 71197 (version 1 or 2), requiring minimum 10.67 mm × 5.69 mm copper pad per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically and thermally connected to die drain; must be soldered to large copper area for heat transfer
Pin 2	Gate (G)	High-impedance control terminal; requires <10 nC gate drive energy for full enhancement
Pin 3	Source (S)	Reference node for gate drive and load return path; internal source inductance = 7.5 nH affects switching ring

Key Features

Feature	Design Value
Low R_DS(on) with high g_fs	0.20 Ω + 3.1 S enables high efficiency and fast current response in point-of-load regulators
Fast switching with low Q_g	10 nC total charge supports <50 ns turn-off delay and 23–35 ns fall time at R_g = 24 Ω
Robust body diode recovery	trr = 41–190 ns and Q_rr = 0.15–0.78 μC reduce switching losses in synchronous rectifier operation
Temperature-stable parameters	R_DS(on) increases only ~1.8× from 25 °C to 125 °C, easing thermal design margining
Surface-mount DPAK packaging	Reduces PCB stray inductance vs. through-hole packages, improving EMI and transient response

Applications

Server VRM Power Stage	Telecom DC-DC Converter
Use Scenario: High-current, high-efficiency buck converter delivering 12 V/20 A to CPU core logic in 1U rack servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched at 300–500 kHz with precise dead-time control. Use Value: 0.20 Ω R_DS(on) minimizes conduction loss; 7.5 nH source inductance enables clean gate drive waveform integrity.	Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom line cards with strict thermal envelope. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology. Use Value: 2.0 V/ns diode dV/dt rating prevents false turn-on; 5.0 °C/W R_thJC allows direct mounting to aluminum heatsink.
Consumer PSU Output Stage	Industrial Motor Driver Half-Bridge
Use Scenario: Compact 24 V/5 A AC-DC adapter for gaming peripherals with no-fan cooling requirement. IC Role / Device Role / Timing Role: Primary-side switching FET in quasi-resonant flyback controller with valley switching. Use Value: 50 V V_DS provides margin over reflected 36 V spike; 33 A pulsed ID supports overload tolerance.	Use Scenario: Low-voltage (24 V) BLDC motor driver half-bridge leg in factory automation I/O modules. IC Role / Device Role / Timing Role: High-side or low-side switch in 20 kHz PWM-driven H-bridge with bootstrap gate drive. Use Value: V_GS(th) = 2.0–4.0 V ensures reliable turn-on with 5 V gate drive; ease of paralleling supports >15 A output current.

Server VRM Power Stage

Telecom DC-DC Converter

Use Scenario: High-current, high-efficiency buck converter delivering 12 V/20 A to CPU core logic in 1U rack servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switched at 300–500 kHz with precise dead-time control.

Use Value: 0.20 Ω R_DS(on) minimizes conduction loss; 7.5 nH source inductance enables clean gate drive waveform integrity.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom line cards with strict thermal envelope.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 2.0 V/ns diode dV/dt rating prevents false turn-on; 5.0 °C/W R_thJC allows direct mounting to aluminum heatsink.

Consumer PSU Output Stage

Industrial Motor Driver Half-Bridge

Use Scenario: Compact 24 V/5 A AC-DC adapter for gaming peripherals with no-fan cooling requirement.

IC Role / Device Role / Timing Role: Primary-side switching FET in quasi-resonant flyback controller with valley switching.

Use Value: 50 V V_DS provides margin over reflected 36 V spike; 33 A pulsed ID supports overload tolerance.

Use Scenario: Low-voltage (24 V) BLDC motor driver half-bridge leg in factory automation I/O modules.

IC Role / Device Role / Timing Role: High-side or low-side switch in 20 kHz PWM-driven H-bridge with bootstrap gate drive.

Use Value: V_GS(th) = 2.0–4.0 V ensures reliable turn-on with 5 V gate drive; ease of paralleling supports >15 A output current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR010-GE3	Same silicon die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (16 mm vs. 12 mm) and RoHS marking	No functional difference; suitable for same PCB layout and thermal design	Select SiHFR010-GE3 when sourcing from distributors with GE3-coded inventory or requiring halogen-free compliance documentation
IRLR010TRPbF	Same DPAK package and 50 V/8.2 A rating but higher R_DS(on) = 0.27 Ω and Q_g = 12 nC; slightly lower dV/dt = 1.8 V/ns	Higher conduction and switching losses; less suitable for high-frequency, high-efficiency designs	Choose IRLR010TRPbF only if IRFR010TRL is unavailable and thermal budget permits 35 % higher R_DS(on) loss

Compared with SiHFR010-GE3, IRFR010TRL offers identical electrical performance with legacy part-number traceability; versus IRLR010TRPbF, IRFR010TRL delivers lower conduction loss and faster switching, making it preferable for thermally constrained or high-efficiency applications.

Availability

IRFR010TRL is available at Aetrix Electronics and suitable for server VRM power stages, telecom DC-DC converters, and industrial motor driver half-bridges requiring stable component supply across multi-year production cycles.

Supply support for IRFR010TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability testing.

The IRFR010TRL belongs to Vishay's "FR" series of surface-mount power MOSFETs designed specifically for high-volume, thermally constrained switching applications in computing, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current for IRFR010TRL at 100 °C case temperature?

The IRFR010TRL supports 5.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and must be validated against actual board layout, copper area, and ambient conditions. The IRFR010TRL's R_thJC = 5.0 °C/W enables predictable junction temperature estimation using measured case temperature.

Does IRFR010TRL have a logic-level gate threshold?

Yes, the IRFR010TRL has a gate-source threshold voltage (V_GS(th)) ranging from 2.0 V to 4.0 V, making it compatible with 3.3 V and 5 V logic-level gate drivers without external level shifting. This characteristic is confirmed in the Specifications table and enables direct interfacing with microcontrollers and PWM controllers in low-voltage systems using the IRFR010TRL.

What is the body diode reverse recovery charge (Q_rr) of IRFR010TRL?

The IRFR010TRL exhibits a body diode reverse recovery charge (Q_rr) of 0.15–0.78 μC, measured at T_J = 25 °C with I_F = 7.3 A and dI/dt = 100 A/μs. This parameter directly impacts switching loss in synchronous rectifier and bridge configurations and is critical for selecting gate drive strength and snubber design when using the IRFR010TRL in hard-switched topologies.

Can IRFR010TRL be paralleled with identical units for higher current handling?

Yes, the IRFR010TRL is explicitly designed for ease of paralleling, as noted in its Features section. Its positive temperature coefficient of R_DS(on) ensures current sharing stability across multiple devices. To maintain balance, use matched gate resistors, symmetrical PCB routing, and shared thermal coupling - all validated in designs using the IRFR010TRL for >15 A output stages.

What is the recommended PCB pad layout for IRFR010TRL's DPAK package?

Vishay Application Note 826 specifies a minimum 10.67 mm × 5.69 mm copper pad for the IRFR010TRL's DPAK (TO-252) package to ensure adequate thermal conduction and solder joint reliability. The pad must fully cover the exposed drain tab and connect to internal ground or power planes via multiple thermal vias - a layout requirement confirmed in the official Vishay package drawing document 71197 used for the IRFR010TRL.

IRFR010TRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR010TRL FAQ

1.How can I place an order for IRFR010TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010TRL reliable?

The price and inventory of IRFR010TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010TRL is usually 5 days.

3.What payment methods are accepted for IRFR010TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010TRL?

IRFR010TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010TRL?

For technical support, including IRFR010TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010TRL requirements.

6.How does Aetrix verify that IRFR010TRL is sourced from the original manufacturer or authorized distributors?

All IRFR010TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010TRL meets industry standards.

7.What is the process for return or replacement of IRFR010TRL?

All IRFR010TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010TRL part is unused and in its original packaging.

Return procedure for IRFR010TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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