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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010TRPBF

Name: IRFR010TRPBF
Brand: Vishay Siliconix
SKU: IRFR010TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR010TRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010TRPBF.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

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Product details

Overview

IRFR010TRPBF from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in DPAK (TO-252) surface-mount package, rated for 50 V V_DS, 8.2 A continuous drain current at T_C = 25 °C, and 0.20 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching (t_r = 33–50 ns), low gate charge (Q_g = 10 nC max), and robust body diode recovery (dV/dt = 2.0 V/ns), making it suitable for DC-DC converters and peripheral power switches.

For engineers reviewing the IRFR010TRPBF datasheet, IRFR010TRPBF pinout, IRFR010TRPBF application, or IRFR010TRPBF equivalent, key selection criteria include its DPAK thermal performance (R_thJC = 5.0 °C/W), logic-compatible gate threshold (V_GS(th) = 2.0–4.0 V), and avalanche-rated operation (I_AS = 1.5 A) in compact high-volume power stages.

Technical Context

This discrete MOSFET uses planar V-groove silicon technology to achieve low on-resistance with high transconductance (g_fs = 3.1 S typ). Its DPAK package minimizes parasitic inductance (L_D = 4.5 nH, L_S = 7.5 nH), supporting clean switching waveforms in hard-switched topologies.

The device integrates a fast-recovery body diode (t_rr = 41–190 ns, Q_rr = 0.78 μC max) and exhibits excellent temperature stability of R_DS(on) up to 150 °C junction temperature, enabling reliable operation in thermally constrained environments without active cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage for 24 V input systems with 100 % margin against transient spikes.
R_DS(on) @ V_GS = 10 V	0.20 Ω max - Enables ≤1.3 W conduction loss at 8.2 A, reducing heatsink requirements in space-constrained PCBs.
Q_g	10 nC max - Low gate drive energy supports efficient PWM control with standard 5 V/3.3 V logic-level gate drivers.
t_r / t_f	33–50 ns / 23–35 ns - Fast edge rates minimize switching losses in 100–500 kHz DC-DC converters.
I_D @ T_C = 100 °C	5.2 A - Sustained current capability under hot ambient conditions typical in enclosed telecom equipment.
dV/dt (diode)	2.0 V/ns - High diode recovery dV/dt tolerance prevents false turn-on during inductive flyback in synchronous rectifiers.
R_thJC	5.0 °C/W - Enables direct heatsinking via PCB copper pour or external metal slug, critical for thermal management in DPAK layouts.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current, low-inductance PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Exposed copper pad on underside connects directly to PCB thermal plane; carries full load current and dissipates >90 % of heat.
Gate	Voltage-controlled switch input	Low-threshold (2.0–4.0 V) terminal requiring minimal drive strength; sensitive to ESD but compatible with microcontroller GPIO.
Source	Reference node / return path	Common return for gate drive and load current; must be routed with low inductance to avoid ringing during switching transitions.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g figure-of-merit	2.0 Ω·nC - Balances conduction and switching losses for optimal efficiency in medium-frequency SMPS.
Enhanced body diode recovery	t_rr = 41–190 ns with soft recovery waveform - Reduces EMI and voltage overshoot in freewheeling paths without snubbers.
Surface-mount DPAK footprint	6.35 mm × 6.73 mm outline with 2.28 mm lead pitch - Compatible with automated pick-and-place and reflow soldering in high-volume manufacturing.
Temperature-stable parameters	R_DS(on) drift <10 % from 25 °C to 125 °C - Maintains predictable loss profile across industrial operating range without derating recalculations.
Avalanche-rated operation	I_AS = 1.5 A (single pulse) - Withstands unclamped inductive energy events in motor drives or relay coils without failure.

Applications

DC-DC Converter Switch	Peripheral Power Switch
Use Scenario: Step-down converter in laptop docking station supplying 5 V/3 A to USB-C peripherals. IC Role / Device Role / Timing Role: Primary high-side switching element synchronized at 300 kHz with integrated controller. Use Value: Low Q_g enables clean 5 V gate drive from 3.3 V MCU; 0.20 Ω R_DS(on) limits dropout to <150 mV at full load.	Use Scenario: Hot-swap enable switch for PCIe add-in card with inrush current limiting. IC Role / Device Role / Timing Role: Load switch controlling 12 V rail entry with soft-start via gate resistor network. Use Value: 8.2 A rating handles peak insertion current; body diode blocks reverse current during hot-plug sequencing.
Telecom DC Supply	Consumer Power Management
Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V telecom brick supplying base station radios. IC Role / Device Role / Timing Role: Low-side rectifying switch driven by transformer-coupled gate signal. Use Value: 2.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus transients; 5.0 °C/W R_thJC sustains 12 V/6 A output with 2 oz copper.	Use Scenario: Battery protection FET in portable speaker charging circuit disconnecting Li-ion pack during overvoltage. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage cutoff switch placed between charger IC and battery terminals. Use Value: 50 V V_DS provides 2× margin over 19.5 V max charger output; ±20 V V_GS rating tolerates gate drive overshoot.

DC-DC Converter Switch

Peripheral Power Switch

Use Scenario: Step-down converter in laptop docking station supplying 5 V/3 A to USB-C peripherals.

IC Role / Device Role / Timing Role: Primary high-side switching element synchronized at 300 kHz with integrated controller.

Use Value: Low Q_g enables clean 5 V gate drive from 3.3 V MCU; 0.20 Ω R_DS(on) limits dropout to <150 mV at full load.

Use Scenario: Hot-swap enable switch for PCIe add-in card with inrush current limiting.

IC Role / Device Role / Timing Role: Load switch controlling 12 V rail entry with soft-start via gate resistor network.

Use Value: 8.2 A rating handles peak insertion current; body diode blocks reverse current during hot-plug sequencing.

Telecom DC Supply

Consumer Power Management

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V telecom brick supplying base station radios.

IC Role / Device Role / Timing Role: Low-side rectifying switch driven by transformer-coupled gate signal.

Use Value: 2.0 V/ns dV/dt rating prevents spurious turn-on during rapid bus transients; 5.0 °C/W R_thJC sustains 12 V/6 A output with 2 oz copper.

Use Scenario: Battery protection FET in portable speaker charging circuit disconnecting Li-ion pack during overvoltage.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage cutoff switch placed between charger IC and battery terminals.

Use Value: 50 V V_DS provides 2× margin over 19.5 V max charger output; ±20 V V_GS rating tolerates gate drive overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR010TRPBF	Same DPAK package, identical 50 V/8.2 A rating, but lower R_DS(on) (0.18 Ω max) and higher Q_g (12 nC).	Better conduction loss at cost of slightly slower switching; requires stronger gate driver.	Prefer when thermal budget dominates over switching frequency constraints.
SiHFR010-GE3	Vishay's own lead-free halogen-free variant; identical electrical specs and DPAK mechanical form factor.	No functional difference; fully interchangeable in RoHS-compliant designs.	Select when compliance with JEDEC J-STD-609 Class 2 or IPC-1752A is required.

Compared with IRFR010TRPBF, IRLR010TRPBF trades 10 % lower R_DS(on) for 20 % higher Q_g, while SiHFR010-GE3 offers identical performance with enhanced environmental compliance-enabling direct substitution where regulatory or thermal priorities shift.

Availability

IRFR010TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, peripheral power switches, and telecom DC supplies requiring stable component supply with consistent DPAK packaging and traceable Vishay sourcing.

Supply support for IRFR010TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR010TRPBF belongs to Vishay's legacy "IR" power MOSFET family, engineered for cost-sensitive, high-volume industrial and consumer power conversion where DPAK thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum junction temperature for IRFR010TRPBF?

The IRFR010TRPBF has an operating junction temperature range of –55 °C to +150 °C. This allows reliable operation in sealed enclosures or near heat-generating components without forced airflow. Derating curves in the datasheet show that continuous drain current drops linearly above 25 °C case temperature, reaching 5.2 A at 100 °C case. The 150 °C limit ensures compatibility with lead-free reflow profiles and high-ambient industrial environments.

Does IRFR010TRPBF require a gate resistor for safe operation?

Yes, IRFR010TRPBF benefits from an external gate resistor (typically 10–47 Ω) to dampen ringing caused by L_S and L_D parasitics (7.5 nH and 4.5 nH respectively). Without it, fast edges can excite LC oscillations leading to shoot-through or gate overvoltage. The resistor value balances switching speed against EMI and gate driver stress-lower values increase dV/dt but raise EMI risk; higher values slow turn-on/off and increase switching loss. Layout with short, wide gate traces remains essential regardless of resistor choice.

Can IRFR010TRPBF be used in linear mode applications?

No, IRFR010TRPBF is not characterized or guaranteed for linear (active region) operation. Its Safe Operating Area (SOA) curve in the datasheet only covers pulsed switching conditions up to 10 ms, with strict limits on V_DS × I_D product at elevated temperatures. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin-especially at V_DS > 20 V and I_D > 2 A. For analog pass elements, select MOSFETs explicitly rated for linear mode with defined SOA across DC and all pulse widths.

What is the body diode forward voltage of IRFR010TRPBF at 8.2 A?

The body diode forward voltage (V_SD) of IRFR010TRPBF is specified as 1.6 V maximum at T_J = 25 °C, I_S = 8.2 A, and V_GS = 0 V. This value increases with junction temperature-typical curves show ~1.8 V at 125 °C. The diode's soft recovery (Q_rr = 0.15–0.78 μC) and low reverse recovery time (t_rr = 41–190 ns) make it suitable for freewheeling in non-synchronous buck converters, though synchronous rectification is preferred for efficiency above 2 A.

Is IRFR010TRPBF pin-compatible with other DPAK N-channel MOSFETs?

IRFR010TRPBF uses the standard DPAK (TO-252) 3-pin layout with Drain (tab), Gate, and Source terminals in G-D-S order on the bottom view per Vishay's package drawing 71197. It is mechanically and electrically pin-compatible with any DPAK N-channel MOSFET sharing this pinout-including IRLR010TRPBF and SiHFR010-GE3-but electrical performance (R_DS(on), Q_g, t_r) must be verified for functional equivalence in the target circuit.

IRFR010TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR010TRPBF FAQ

1.How can I place an order for IRFR010TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010TRPBF reliable?

The price and inventory of IRFR010TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR010TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010TRPBF?

IRFR010TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010TRPBF?

For technical support, including IRFR010TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010TRPBF requirements.

6.How does Aetrix verify that IRFR010TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR010TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR010TRPBF?

All IRFR010TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010TRPBF part is unused and in its original packaging.

Return procedure for IRFR010TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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