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Vishay Siliconix IRFR014

Part No.:
IRFR014
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR014.pdf
Description:
MOSFET N-CH 60V 7.7A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,359

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Product details

Overview

IRFR014 from Vishay Siliconix is a 60 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 27.4 mJ single-pulse avalanche energy - designed for DC-DC converters, motor drivers, and load switching in industrial power supplies.

For engineers reviewing the IRFR014 datasheet, IRFR014 pinout, IRFR014 application, or IRFR014 equivalent, key selection criteria include its 60 V VDS, 0.20 Ω on-resistance at 10 V drive, 11 nC Qg, 5.0 °C/W RthJC, and DPAK thermal performance under PCB-mounted conditions.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining rugged unclamped inductive switching capability. Its 27.4 mJ EAS rating and 4.5 V/ns peak diode recovery dV/dt support reliable operation in hard-switched topologies without external snubbers.

The device integrates a fast-recovery body diode with trr = 70–140 ns and Qrr = 0.20–0.40 μC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge circuits. Gate drive is simplified by a 2.0–4.0 V VGS(th) and low 3.1 nC Qgs, supporting direct microcontroller interfacing.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - maximum blocking voltage for 48 V bus applications with margin
RDS(on) @ VGS = 10 V 0.20 Ω - enables ≤1.2 W conduction loss at 7.7 A continuous drain current
Qg (total) 11 nC - determines gate drive power and switching speed in 100–500 kHz converters
EAS 27.4 mJ - supports robust operation during inductive load turn-off without external clamping
RthJC 5.0 °C/W - allows 25 W power dissipation with <125 °C junction rise above case temperature
ID (TC = 25 °C) 7.7 A - continuous current rating when mounted on heatsink or thermally enhanced PCB
trr 70–140 ns - body diode recovery time enabling high-frequency freewheeling with low switching loss

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction; standard 3-pin layout optimized for automated assembly and PCB heat spreading.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; threshold 2.0–4.0 V enables direct MCU interface
D (Drain) High-side power terminal Exposed metal tab - electrically connected to drain and serves as primary thermal path to PCB copper
S (Source) Reference node / return path Common source connection for gate drive reference and current sensing; low-inductance internal source bond wire (7.5 nH)

Key Features

Feature Design Value
Dynamic dV/dt rating 4.5 V/ns - ensures immunity to false turn-on during high-speed voltage transients in bridge configurations
Fast switching 10 ns td(on), 50 ns tr, 13 ns td(off), 19 ns tf - reduces transition losses in high-frequency SMPS
Low gate charge Qgs = 3.1 nC, Qgd = 5.8 nC - minimizes Miller effect and improves controllability in hard-switched circuits
Ruggedized design 27.4 mJ EAS, 31 A IDM - withstands repetitive inductive energy without degradation in motor control
Surface-mount compatibility DPAK footprint - supports vapor phase, infrared, and wave soldering per JEDEC standards

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V input to 12 V/5 V output in industrial PLC power modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250 kHz with forced PWM control.

Use Value: 0.20 Ω RDS(on) limits conduction loss to <1.2 W at full load; 11 nC Qg enables efficient gate driving with low-power controllers.

Use Scenario: H-bridge driver for 24 V brushed motors in automated gate actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 7.7 A with integrated body diode freewheeling.

Use Value: 70–140 ns trr and 0.40 μC Qrr minimize reverse recovery loss during direction reversal; 27.4 mJ EAS prevents failure during stall events.

Hot-Swap Controller LED Constant-Current Driver

Use Scenario: Inrush current limiting and fault protection in redundant 24 V telecom power distribution units.

IC Role / Device Role / Timing Role: Load switch placed between input bus and downstream circuitry, controlled via analog gate bias.

Use Value: 2.0–4.0 V VGS(th) allows precise linear-mode operation for soft-start; 5.0 °C/W RthJC sustains 2.5 W dissipation on FR-4 PCB.

Use Scenario: Constant-current dimming stage for high-brightness LED arrays in street lighting fixtures.

IC Role / Device Role / Timing Role: PWM-controlled current sink modulating LED string current at 1–5 kHz.

Use Value: Fast 19 ns fall time ensures sharp PWM edges; 0.20 Ω RDS(on) maintains <1% current error across 0–100% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
SiHFR014-GE3 Same die, identical RDS(on), Qg, and EAS; Pb-free and halogen-free construction No functional difference; preferred for RoHS-compliant production Select SiHFR014-GE3 when lead-free/halogen-free compliance is required per IPC-J-STD-609
IRFU014PbF Identical electrical specs but IPAK (TO-251) through-hole package; higher RthJA (110 °C/W vs. 50 °C/W PCB mount) Suitable for prototyping or low-volume through-hole assembly; not drop-in compatible with DPAK footprint Choose IRFU014PbF only when board layout mandates through-hole mounting and thermal derating is acceptable

Compared with IRFR014, SiHFR014-GE3 offers identical performance with environmental compliance, while IRFU014PbF trades surface-mount thermal efficiency for through-hole mechanical robustness - neither is pin-compatible, requiring layout revision.

Availability

IRFR014 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR014 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency switching in space-constrained industrial and automotive power systems.

FAQ

What is the maximum continuous drain current for IRFR014 at 100 °C case temperature?

The IRFR014 supports 4.9 A continuous drain current at TC = 100 °C, derived from its 25 W PD rating and 0.20 W/°C linear derating factor. This value assumes proper thermal coupling to a heatsink or thermally enhanced PCB - actual current must be validated against measured junction temperature using RthJC = 5.0 °C/W.

Does IRFR014 have a logic-level gate drive requirement?

The IRFR014 is not a logic-level MOSFET; its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is specified for RDS(on) at VGS = 10 V. While it can turn on with 5 V drive, full enhancement requires ≥10 V to achieve the rated 0.20 Ω on-resistance - use of 3.3 V logic directly is not recommended without gate boosting.

What is the avalanche energy rating of IRFR014 and how is it tested?

The IRFR014 has a single-pulse avalanche energy rating of 27.4 mJ, measured under conditions of VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, and IAS = 7.7 A per Figure 12 of the datasheet. This rating validates ruggedness during unclamped inductive switching but does not imply unlimited repetitive avalanche capability.

Can IRFR014 be paralleled with other MOSFETs for higher current handling?

Yes, the IRFR014 is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. Successful paralleling requires matched gate drive paths, symmetrical PCB layout, and individual gate resistors to suppress oscillation - refer to Vishay Application Note AN826 for layout guidelines.

What is the thermal resistance from junction to ambient for IRFR014 in a typical PCB mount configuration?

When mounted on a 1" square FR-4 PCB, the IRFR014 exhibits RthJA = 50 °C/W. This value assumes standard JEDEC test conditions and defines the maximum power dissipation (2.5 W at TA = 25 °C) before exceeding TJ(max) = 150 °C - actual performance depends on copper area, layer count, and airflow.

IRFR014 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR014 FAQ

1.How can I place an order for IRFR014 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR014 reliable?

The price and inventory of IRFR014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR014 is usually 5 days.

3.What payment methods are accepted for IRFR014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR014?

IRFR014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR014?

For technical support, including IRFR014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR014 requirements.

6.How does Aetrix verify that IRFR014 is sourced from the original manufacturer or authorized distributors?

All IRFR014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR014 meets industry standards.

7.What is the process for return or replacement of IRFR014?

All IRFR014 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR014 part is unused and in its original packaging.

Return procedure for IRFR014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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