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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR014PBF-BE3

Name: IRFR014PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR014PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR014PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR014PBF-BE3.pdf

Description:: MOSFET N-CH 60V 7.7A DPAK

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Product details

Overview

IRFR014PBF-BE3 from Vishay Siliconix is a 60 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package with R_DS(on) = 0.20 Ω at V_GS = 10 V, Q_g = 11 nC, and fast switching capability. It serves as a high-efficiency low-side switch in DC-DC converters, motor drivers, and load management circuits.

For engineers reviewing the IRFR014PBF-BE3 datasheet, IRFR014PBF-BE3 pinout, IRFR014PBF-BE3 application, or IRFR014PBF-BE3 equivalent, key selection criteria include its 60 V V_DS, 0.20 Ω on-resistance at 10 V gate drive, 11 nC total gate charge, avalanche energy rating of 27.4 mJ, and DPAK thermal performance with R_thJC = 5.0 °C/W.

Technical Context

This third-generation TrenchFET® MOSFET uses silicon technology optimized for low conduction loss and fast switching in compact surface-mount applications. Its dynamic dV/dt rating of 4.5 V/ns and unclamped inductive switching capability support robust operation in hard-switched topologies.

The device features an integrated body diode with t_rr = 70–140 ns and Q_rr = 0.20–0.40 μC, enabling moderate-frequency synchronous rectification or freewheeling in buck converters and H-bridge motor drives without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 24 V and 48 V bus applications
R_DS(on)	0.20 Ω @ V_GS = 10 V - Enables ≤1.5 W conduction loss at 7.7 A continuous drain current
Q_g	11 nC - Low gate charge supports efficient 100–500 kHz switching with standard gate drivers
E_AS	27.4 mJ - Avalanche-rated for reliable operation under inductive turn-off stress
R_thJC	5.0 °C/W - Enables 25 W power dissipation with minimal heatsink when mounted to copper plane
t_r/t_f	50 ns / 19 ns - Fast edge rates reduce switching losses in PWM-controlled power stages
I_D (T_C = 100 °C)	4.9 A - Derated continuous current for sustained operation in thermally constrained PCB layouts

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal conduction and mechanical stability. Standard 3-pin surface-mount footprint compatible with vapor-phase and infrared reflow.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; threshold V_GS(th) = 2.0–4.0 V enables compatibility with microcontroller GPIO
D (Drain)	High-side power node	Exposed metal tab - electrically connected to drain; must be isolated from heatsink unless referenced to same potential
S (Source)	Power return / reference	Common connection point for gate driver return path and current sensing; ties to PCB ground plane

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.5 V/ns - Suppresses false turn-on during high dv/dt transients in half-bridge configurations
Fast switching	td(on) = 10 ns, tr = 50 ns - Reduces transition losses in high-frequency SMPS designs
Ease of paralleling	Positive temperature coefficient of R_DS(on) - Ensures current sharing stability across multiple devices
Surface-mount (DPAK)	TO-252 outline with thermal pad - Supports automated assembly and 2.5 W PCB-mount power dissipation
Low Q_gd/Q_gs ratio	5.8 nC / 3.1 nC ≈ 1.87 - Improves Miller immunity and reduces gate drive power requirements

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V for industrial control modules. IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode. Use Value: 0.20 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V diode drop at 5 A, improving efficiency by ~2.5% at full load.	Use Scenario: H-bridge drive for 24 V, 3 A brushed motors in automated valves and actuators. IC Role / Device Role: Low-side quadrant switch with integrated body diode for flyback energy recirculation. Use Value: 70–140 ns t_rr and 0.20–0.40 μC Q_rr minimize switching loss and EMI during direction reversal.
LED Load Switch	Hot-Swap Controller
Use Scenario: Inrush-limited 24 V LED string switching in architectural lighting systems. IC Role / Device Role: Controlled turn-on switch with soft-start via gate resistor tuning. Use Value: 11 nC Q_g allows precise slew-rate control using 10–100 kΩ gate resistors, limiting peak inrush to <15 A.	Use Scenario: Board-level hot-swap protection for 48 V backplane modules in telecom equipment. IC Role / Device Role: Main pass element with overcurrent and avalanche energy handling. Use Value: 27.4 mJ E_AS withstands worst-case short-circuit events before protection circuitry responds (~10–100 μs).

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V bus to 12 V/5 V for industrial control modules.

IC Role / Device Role: Low-side synchronous rectifier switch replacing Schottky diode.

Use Value: 0.20 Ω R_DS(on) cuts conduction loss by >60% vs. 0.5 V diode drop at 5 A, improving efficiency by ~2.5% at full load.

Use Scenario: H-bridge drive for 24 V, 3 A brushed motors in automated valves and actuators.

IC Role / Device Role: Low-side quadrant switch with integrated body diode for flyback energy recirculation.

Use Value: 70–140 ns t_rr and 0.20–0.40 μC Q_rr minimize switching loss and EMI during direction reversal.

LED Load Switch

Hot-Swap Controller

Use Scenario: Inrush-limited 24 V LED string switching in architectural lighting systems.

IC Role / Device Role: Controlled turn-on switch with soft-start via gate resistor tuning.

Use Value: 11 nC Q_g allows precise slew-rate control using 10–100 kΩ gate resistors, limiting peak inrush to <15 A.

Use Scenario: Board-level hot-swap protection for 48 V backplane modules in telecom equipment.

IC Role / Device Role: Main pass element with overcurrent and avalanche energy handling.

Use Value: 27.4 mJ E_AS withstands worst-case short-circuit events before protection circuitry responds (~10–100 μs).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR014TRPbF	Same V_DS (60 V), R_DS(on) = 0.22 Ω, Q_g = 12 nC, DPAK package	Marginally higher conduction loss and gate drive requirement; identical pinout and footprint	Select when legacy design validation exists for IRLR014TRPbF and minor efficiency trade-off is acceptable
SiHFR014-GE3	Identical V_DS, R_DS(on), Q_g, and DPAK package; Vishay's newer halogen-free variant	No functional difference; fully compliant with RoHS 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1	Prefer for new designs requiring halogen-free compliance and extended manufacturing availability

Compared with IRFR014PBF-BE3, IRLR014TRPbF offers identical form factor but slightly higher losses, while SiHFR014-GE3 delivers identical electrical performance with enhanced environmental compliance-making it the recommended upgrade path for production continuity and regulatory alignment.

Availability

IRFR014PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED load switching, and hot-swap protection requiring stable component supply and long-term industrial sourcing.

Supply support for IRFR014PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The IRFR014PBF-BE3 belongs to Vishay's TrenchFET® Generation III power MOSFET family, engineered for high-current, surface-mount switching in space-constrained industrial and automotive auxiliary systems.

FAQ

What is the maximum continuous drain current for IRFR014PBF-BE3 at 100 °C case temperature?

The maximum continuous drain current for IRFR014PBF-BE3 is 4.9 A when the case temperature (T_C) is 100 °C. This derating reflects thermal limitations of the DPAK package under sustained power dissipation; at 25 °C case temperature, the rating increases to 7.7 A. The linear derating factor is 0.20 W/°C above 25 °C, and IRFR014PBF-BE3 must be mounted on adequate copper area to maintain safe junction temperatures.

Does IRFR014PBF-BE3 support logic-level gate drive?

IRFR014PBF-BE3 has a gate-source threshold voltage (V_GS(th)) range of 2.0–4.0 V, making it partially compatible with 3.3 V and 5 V logic-level drive, but full enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) = 0.20 Ω. At V_GS = 4.5 V, R_DS(on) rises significantly-typically >0.5 Ω-so IRFR014PBF-BE3 is best driven with a dedicated 10 V gate driver for optimal efficiency.

What is the avalanche energy rating of IRFR014PBF-BE3 and how is it tested?

IRFR014PBF-BE3 is rated for 27.4 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 924 μH, R_g = 25 Ω, and I_AS = 7.7 A. This rating confirms ruggedness against inductive turn-off transients in relay drivers, solenoid controls, and motor phase switching where IRFR014PBF-BE3 may experience unclamped inductive kickback.

Can IRFR014PBF-BE3 be used in parallel configurations?

Yes, IRFR014PBF-BE3 is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes natural current sharing as temperature rises. To ensure balanced operation, use matched gate resistors, symmetrical PCB layout with equal trace lengths, and common-source routing. IRFR014PBF-BE3 does not require active current balancing in most medium-power applications up to 20 A total load.

What is the thermal resistance from junction to case (R_thJC) for IRFR014PBF-BE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for IRFR014PBF-BE3 is 5.0 °C/W. This value assumes proper soldering of the exposed drain pad to a minimum 1" × 1" copper area on FR-4 PCB. With this mounting, IRFR014PBF-BE3 can dissipate up to 25 W continuously at T_C = 25 °C, though practical limits are governed by board-level thermal design and ambient conditions.

IRFR014PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR014PBF-BE3 FAQ

1.How can I place an order for IRFR014PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR014PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR014PBF-BE3 reliable?

The price and inventory of IRFR014PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR014PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR014PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR014PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR014PBF-BE3?

IRFR014PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR014PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR014PBF-BE3?

For technical support, including IRFR014PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR014PBF-BE3 requirements.

6.How does Aetrix verify that IRFR014PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR014PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR014PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR014PBF-BE3?

All IRFR014PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR014PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR014PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR014PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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