Vishay Siliconix IRFR014TR
- Part No.:
- IRFR014TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR014TR.pdf
- Description:
- MOSFET N-CH 60V 7.7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:9,164
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Product details
Overview
IRFR014TR from Vishay Siliconix is a 60 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 27.4 mJ single-pulse avalanche energy - used in DC-DC converters, motor drivers, and load switching where fast switching and ruggedness are required.
For engineers reviewing the IRFR014TR datasheet, IRFR014TR pinout, IRFR014TR application, or IRFR014TR equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery characteristics, PCB-mount power dissipation limits, and validated alternative parts for industrial power stage design.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon process and package layout to achieve low conduction loss and high dV/dt immunity (4.5 V/ns). Its 5.0 °C/W junction-to-case thermal resistance supports 25 W continuous operation at TC = 25 °C when heatsink-mounted.
The device integrates a robust intrinsic body diode with 70–140 ns reverse recovery time and 0.20–0.40 μC Qrr, enabling reliable operation in synchronous rectification and inductive switching circuits without external snubbers under defined dI/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage compatible with 48 V bus systems and automotive 36 V transients |
| RDS(on) @ VGS = 10 V | 0.20 Ω - enables ≤1.2 W conduction loss at 7.7 A continuous drain current |
| Qg | 11 nC - determines gate drive energy requirement; supports <50 ns turn-on delay with 24 Ω gate resistor |
| EAS | 27.4 mJ - specifies unclamped inductive switching capability without avalanche failure up to IAS = 7.7 A |
| RthJC | 5.0 °C/W - defines thermal path efficiency from die to case; critical for heatsink sizing in high-power density layouts |
| ID @ TC = 100 °C | 4.9 A - derated continuous current limit when case temperature reaches 100 °C |
| dV/dt rating | 4.5 V/ns - ensures immunity against false turn-on during high-speed voltage transients in half-bridge configurations |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for PCB heat spreading and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive; 3.1 nC Qgs enables fast turn-on with minimal Miller effect |
| D (Drain) | High-side switch node | Exposed metal tab - must be connected to PCB copper pour for thermal management and low-impedance return path |
| S (Source) | Power reference / return | Common source node for gate drive loop; internal 7.5 nH source inductance affects switching waveform fidelity |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - prevents spurious turn-on during high dv/dt commutation in bridge topologies |
| Fast switching performance | 10 ns turn-on delay + 50 ns rise time - reduces switching losses in 100–500 kHz SMPS designs |
| Low gate charge (Qg) | 11 nC - lowers gate driver power consumption and simplifies drive circuit design |
| Ruggedized avalanche capability | 27.4 mJ EAS - allows safe operation under inductive load interruption without external clamping |
| Surface-mount (DPAK) packaging | TO-252 outline with thermal pad - supports automated assembly and 2.5 W power dissipation on 1" FR-4 PCB |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300 kHz with 10 V gate drive. Use Value: 0.20 Ω RDS(on) minimizes conduction loss; 11 nC Qg enables clean 50 ns rise time for <1% duty-cycle dead-time optimization. | Use Scenario: H-bridge driver for 24 V brushed motors in HVAC actuators and robotic joints. IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 7.7 A peak current. Use Value: 27.4 mJ EAS withstands inductive kickback during PWM reversal; 4.5 V/ns dV/dt rating prevents shoot-through in fast-switching bridges. |
| LED Constant-Current Driver | Hot-Swap Power Controller |
Use Scenario: Dimmable LED string driver in commercial lighting fixtures with analog/PWM dimming. IC Role / Device Role / Timing Role: Low-side current-sense switch modulated at 1–10 kHz for precise current regulation. Use Value: 7.7 A continuous ID supports >50 W LED loads; body diode VSD = 1.6 V ensures predictable forward drop during PWM off-time. | Use Scenario: Inrush current limiting and fault protection in 48 V telecom power distribution units. IC Role / Device Role / Timing Role: Load switch controlling hot-plug insertion of downstream boards. Use Value: 60 V VDS accommodates 48 V nominal + 20% surge; 31 A pulsed ID handles capacitor charging surges without SOA violation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR014TRPbF | Same 60 V/7.7 A rating but in smaller DPAK-3L (TO-252AA) with identical pinout and RDS(on) | Identical functional use; slightly lower thermal resistance due to tighter leadframe geometry | Select when board space is constrained and thermal margin exceeds 5 °C/W requirement |
| SiHFR014TR-GE3 | Same Vishay die, halogen-free construction, identical RDS(on), Qg, and avalanche rating | No performance difference; preferred for RoHS-compliant and halogen-free BOMs | Select for compliance-critical industrial or medical designs requiring full material declaration |
Compared with IRFR014TR, IRLR014TRPbF offers identical electrical behavior in a marginally more compact DPAK variant, while SiHFR014TR-GE3 provides identical performance with halogen-free packaging - both require no schematic or layout changes but differ in environmental compliance and thermal footprint.
Availability
IRFR014TR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, LED drivers, and hot-swap controllers requiring stable component supply across industrial, telecom, and embedded power applications.
Supply support for IRFR014TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR014TR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency switching in space-constrained surface-mount power stages where low RDS(on), fast switching, and rugged avalanche performance are essential.
FAQ
What is the maximum continuous drain current for IRFR014TR at 100 °C case temperature?
The IRFR014TR supports 4.9 A continuous drain current at TC = 100 °C, per its linear derating factor of 0.20 W/°C from the 25 °C rating of 25 W. This value is confirmed in the Absolute Maximum Ratings table and reflects thermal limitation rather than silicon current capability. Designers must ensure PCB copper area and airflow maintain case temperature below 100 °C to sustain this current level in the IRFR014TR.
Does IRFR014TR have a specified body diode reverse recovery time?
Yes, the IRFR014TR body diode has a reverse recovery time (trr) of 70–140 ns at TJ = 25 °C, IF = 10 A, and dI/dt = 100 A/μs, as specified in the Diode Characteristics section. This parameter is critical for synchronous rectification and half-bridge operation, and the IRFR014TR's trr enables efficient operation up to ~200 kHz without excessive diode switching loss.
What is the gate-source threshold voltage range for IRFR014TR?
The IRFR014TR has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA, per the Static Specifications table. This confirms compatibility with standard 5 V and 10 V logic-level gate drivers, though full enhancement requires ≥10 V to achieve the rated 0.20 Ω RDS(on). The IRFR014TR is not a logic-level MOSFET optimized for 3.3 V drive.
Can IRFR014TR be used in avalanche mode, and what is its rated energy?
Yes, the IRFR014TR is rated for single-pulse avalanche operation with EAS = 27.4 mJ under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 924 μH, Rg = 25 Ω, and IAS = 7.7 A. This rating is validated per JEDEC standards and allows safe inductive energy absorption without device failure - a key reliability feature of the IRFR014TR in flyback and motor drive applications.
What is the thermal resistance from junction to ambient for IRFR014TR in standard PCB mount?
The IRFR014TR has a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W when mounted on a 1" square FR-4 PCB, as specified in the Thermal Resistance Ratings table. This value assumes standard copper pour layout and natural convection; it directly determines allowable power dissipation (2.5 W at TA = 25 °C) and must be used alongside RthJC = 5.0 °C/W for heatsink-based thermal design of the IRFR014TR.
IRFR014TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR014TR FAQ
1.How can I place an order for IRFR014TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR014TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR014TR reliable?
The price and inventory of IRFR014TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR014TR is usually 5 days.
3.What payment methods are accepted for IRFR014TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR014TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR014TR?
IRFR014TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR014TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR014TR?
For technical support, including IRFR014TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR014TR requirements.
6.How does Aetrix verify that IRFR014TR is sourced from the original manufacturer or authorized distributors?
All IRFR014TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR014TR meets industry standards.
7.What is the process for return or replacement of IRFR014TR?
All IRFR014TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR014TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR014TR part is unused and in its original packaging.
Return procedure for IRFR014TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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