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Vishay Siliconix IRFR014TRPBF-BE3
- Part No.:
- IRFR014TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR014TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 60V 7.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:62
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Product details
Overview
IRFR014TRPBF-BE3 from Vishay Siliconix is a 60 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package with RDS(on) = 0.20 Ω at VGS = 10 V, Qg = 11 nC, and fast switching capability. It serves as a low-side switch in DC-DC converters, motor drivers, and load management circuits requiring rugged avalanche performance (EAS = 27.4 mJ) and dynamic dV/dt immunity (4.5 V/ns).
For engineers reviewing the IRFR014TRPBF-BE3 datasheet, IRFR014TRPBF-BE3 pinout, IRFR014TRPBF-BE3 application, or IRFR014TRPBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating data, PCB-mount power dissipation limits (2.5 W), body diode recovery characteristics (trr = 70–140 ns), and validated alternatives for industrial power switching designs.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon process and packaging to achieve low gate charge (Qg = 11 nC) and low output capacitance (Coss = 160 pF), enabling high-efficiency hard-switching operation up to several hundred kHz. Its 5.0 °C/W junction-to-case thermal resistance supports direct heatsink mounting via the exposed drain pad.
The device integrates a robust intrinsic body diode with reverse recovery charge Qrr = 0.20–0.40 μC and peak diode recovery dV/dt rating of 4.5 V/ns - critical for snubberless inductive turn-off in relay drivers and solenoid controls. Absolute maximum ratings include 60 V VDS, ±20 V VGS, and 150 °C TJ operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 24 V/48 V bus applications with 20 % margin |
| RDS(on) @ VGS = 10 V | 0.20 Ω - Conduction loss of 0.94 W at 4.6 A continuous drain current |
| Qg | 11 nC - Gate drive energy requirement compatible with standard logic-level gate drivers |
| ID @ TC = 25 °C | 7.7 A - Continuous current rating with heatsink; derates linearly to 4.9 A at 100 °C case temp |
| EAS | 27.4 mJ - Unclamped inductive switching energy tolerance without failure |
| trr | 70–140 ns - Body diode reverse recovery time affecting shoot-through risk in half-bridge topologies |
| RthJC | 5.0 °C/W - Thermal resistance from junction to case enables precise heatsink sizing |
| PD (PCB mount) | 2.5 W - Maximum power dissipation on 1" FR-4 PCB without external heatsink |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection. Standard surface-mount footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | High-impedance MOSFET gate terminal; requires ≤ ±20 V drive; 3.1 nC gate-source charge |
| D (Drain) | Power output / high-side return | Exposed metal tab connected internally to drain; must be soldered to large copper pour for thermal conduction |
| S (Source) | Power reference / low-side return | Source terminal tied to system ground or low-side switch node; internal source inductance = 7.5 nH |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - Immunity to false turn-on during fast voltage transients in noisy industrial environments |
| Fast switching | 10 ns turn-on delay + 50 ns rise time - Enables high-frequency PWM control in compact SMPS designs |
| Ease of paralleling | Positive temperature coefficient of RDS(on) - Ensures current sharing stability when multiple IRFR014TRPBF-BE3 devices operate in parallel |
| Ruggedized construction | 27.4 mJ single-pulse avalanche energy - Withstands inductive kickback without external clamping in relay/solenoid drivers |
| Simple drive requirements | Logic-compatible gate threshold (VGS(th) = 2.0–4.0 V) and low Qg - Drivable directly from MCU GPIO or low-power gate driver ICs |
Applications
| DC-DC Converter Switch | Motor Driver Low-Side Switch |
|---|---|
Use Scenario: Synchronous buck converter in 24 V industrial power supply delivering up to 15 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300 kHz with gate drive synchronized to high-side switch. Use Value: 0.20 Ω RDS(on) minimizes conduction loss; 11 nC Qg reduces gate drive power; 5.0 °C/W RthJC allows direct heatsink attachment. |
Use Scenario: H-bridge driver for 12–48 V brushed DC motors in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: Low-side switch controlling motor current direction and braking via PWM duty cycle. Use Value: 27.4 mJ EAS withstands back-EMF during active freewheeling; 4.5 V/ns dV/dt rating prevents spurious turn-on during commutation. |
| Load Switch for Power Sequencing | LED Driver Current Switch |
Use Scenario: Controlled power-up of FPGA or microcontroller subsystems in programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Inrush-limited power switch enabling soft-start and fault-isolated rail enablement. Use Value: 7.7 A ID handles peak startup loads; 0.20 Ω RDS(on) ensures <100 mV dropout at 500 mA; TO-252 footprint simplifies layout routing. |
Use Scenario: Constant-current switching regulator for high-brightness LED strings in industrial signage and machine vision lighting. IC Role / Device Role / Timing Role: PWM-controlled current sink modulating LED brightness at 1–20 kHz. Use Value: Fast 50 ns rise time ensures clean PWM edges; 70–140 ns trr prevents LED current overshoot during dimming transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR014TRPbF | Same 60 V/7.7 A rating but in smaller DPAK variant with lower RDS(on) (0.16 Ω) and Qg (9.5 nC); identical pinout | Better efficiency in space-constrained 24 V systems where thermal margin permits lower RDS(on) | Select IRFR014TRPBF-BE3 when higher avalanche ruggedness (27.4 mJ vs. 22 mJ) or legacy qualification is required. |
| SiHFR014-GE3 | Functionally identical 60 V/7.7 A DPAK MOSFET; same RDS(on), Qg, and thermal specs; Vishay's newer halogen-free version | Drop-in replacement with identical performance and RoHS/REACH compliance; BE3 suffix indicates alternate fab location | Prefer SiHFR014-GE3 for new designs requiring latest material compliance; IRFR014TRPBF-BE3 remains valid for BE3-specified BOMs. |
Compared with IRFR014TRPBF-BE3, IRLR014TRPbF offers lower conduction loss but reduced avalanche capability, while SiHFR014-GE3 provides identical electrical behavior with updated environmental compliance - making the latter ideal for forward-looking industrial designs.
Availability
IRFR014TRPBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and load switching applications requiring stable component supply across extended production lifecycles.
Supply support for IRFR014TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR014TRPBF-BE3 belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for rugged switching in space-constrained surface-mount power stages with emphasis on avalanche strength and thermal robustness.
FAQ
What is the maximum continuous drain current for IRFR014TRPBF-BE3 at 100 °C case temperature?
The IRFR014TRPBF-BE3 supports 4.9 A continuous drain current at TC = 100 °C, derived from its 7.7 A rating at 25 °C and linear derating factor of 0.20 W/°C. This value assumes proper PCB copper area and ambient conditions per Vishay's thermal test setup using a 1" square FR-4 board.
Does IRFR014TRPBF-BE3 have avalanche capability, and what is its rated energy?
Yes, the IRFR014TRPBF-BE3 is rated for single-pulse unclamped inductive switching with EAS = 27.4 mJ under specified test conditions (VDD = 25 V, IAS = 7.7 A). This ruggedness enables reliable operation in relay, solenoid, and motor drive circuits without external snubbers.
What is the gate threshold voltage range for IRFR014TRPBF-BE3, and how does it affect drive compatibility?
The IRFR014TRPBF-BE3 has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 μA. This logic-level range allows direct drive from 3.3 V or 5 V microcontrollers, though full enhancement (RDS(on) = 0.20 Ω) requires VGS ≥ 10 V per datasheet test condition.
Can IRFR014TRPBF-BE3 be used in parallel configurations, and what design consideration applies?
Yes, the IRFR014TRPBF-BE3 supports paralleling due to its positive temperature coefficient of RDS(on), which promotes natural current sharing. Designers must ensure matched gate drive impedance and symmetrical PCB layout to minimize circulating currents and thermal imbalance between devices.
What is the thermal resistance from junction to ambient for IRFR014TRPBF-BE3 in standard PCB mount?
When mounted on a 1" square FR-4 PCB, the IRFR014TRPBF-BE3 exhibits RthJA = 50 °C/W. This value defines the temperature rise from junction to ambient air and determines maximum allowable power dissipation (2.5 W at TA = 25 °C) without forced airflow or heatsinking.
IRFR014TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR014TRPBF-BE3 FAQ
1.How can I place an order for IRFR014TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR014TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR014TRPBF-BE3 reliable?
The price and inventory of IRFR014TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR014TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR014TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR014TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR014TRPBF-BE3?
IRFR014TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR014TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR014TRPBF-BE3?
For technical support, including IRFR014TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR014TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR014TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR014TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR014TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR014TRPBF-BE3?
All IRFR014TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR014TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR014TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR014TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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