Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR020

Name: IRFR020
Brand: Vishay Siliconix
SKU: IRFR020
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR020

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR020.pdf

Description:: MOSFET N-CH 60V 14A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,409

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR020 from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy - designed for DC-DC converters, motor control, and load switching where fast switching and ruggedness are required.

For engineers reviewing the IRFR020 datasheet, IRFR020 pinout, IRFR020 application, or IRFR020 equivalent, this page delivers verified electrical specs, thermal derating data, body diode recovery characteristics, PCB-mount power dissipation limits, and real-world switching timing under defined test conditions (V_DD = 30 V, I_D = 17 A, R_G = 18 Ω).

Technical Context

The IRFR020 employs third-generation trench-gate silicon technology optimized for low conduction loss and high dV/dt immunity (5.5 V/ns peak diode recovery rate). Its dynamic performance is characterized by 13 ns turn-on delay, 58 ns rise time, and 42 ns fall time under standardized gate-drive conditions.

Thermal design is constrained by R_thJC = 3.0 °C/W (junction-to-case) and R_thJA = 50 °C/W when mounted on a 1" square FR-4 PCB - enabling 2.5 W continuous power dissipation at ambient temperature without heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V bus systems and automotive 36 V transients
R_DS(on)	0.10 Ω @ V_GS = 10 V - enables ≤1.4 W conduction loss at 14 A continuous drain current
Q_g	25 nC - determines gate drive power requirement and switching speed trade-off in hard-switched topologies
E_AS	91 mJ - supports unclamped inductive switching up to 14 A without failure under repetitive conditions
I_D (T_C = 100 °C)	9.0 A - defines maximum sustained current with case temperature limited to 100 °C
dV/dt rating	5.5 V/ns - ensures reliable operation during fast voltage transients across body diode commutation
Body diode V_SD	1.5 V @ I_S = 14 A - impacts forward conduction loss during synchronous rectification or freewheeling

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for PCB heat spreading and low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring ≤ ±20 V drive; 5.8 nC gate-source charge defines Miller plateau duration
Pin 2 (D)	Drain	Main power output terminal; electrically and thermally connected to exposed copper pad on bottom of package
Pin 3 (S)	Source	Power return path and reference for gate drive; internal source inductance LS = 7.5 nH affects switching waveform ringing

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.5 V/ns - prevents spurious turn-on during high-speed inductive switching and improves system EMI margin
Fast switching	13 ns t_d(on), 42 ns t_f - reduces switching losses in PWM frequencies up to 500 kHz
Ease of paralleling	Positive R_DS(on) temperature coefficient - enables natural current sharing without external ballasting resistors
Simple drive requirements	V_GS(th) = 2.0–4.0 V - compatible with standard 5 V or 10 V logic-level gate drivers without level-shifting
Ruggedized device design	91 mJ E_AS - withstands repetitive unclamped inductive energy without degradation in motor drive or solenoid control

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–500 kHz with 14 A peak current capability. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 25 nC Q_g enables efficient gate drive with low-power controllers.	Use Scenario: H-bridge half-bridge leg for 24 V brushed motor control in automated gate actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 10 A continuous current with body diode freewheeling. Use Value: 1.5 V V_SD and 88–180 ns t_rr reduce reverse recovery loss; 5.5 V/ns dV/dt rating prevents shoot-through during commutation.
LED Constant-Current Driver	Industrial Load Switch
Use Scenario: Dimmable 48 V LED string driver with PWM dimming and overcurrent protection. IC Role / Device Role / Timing Role: Main series-pass switch modulated at 1–20 kHz to regulate average LED current. Use Value: 60 V V_DS accommodates LED string voltage plus ripple; 9.0 A I_D @ 100 °C supports full-load operation in enclosed enclosures.	Use Scenario: Remote-controlled 24 V power distribution for sensor nodes in factory automation. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay, supporting 100,000+ cycles with zero contact bounce. Use Value: 56 A pulsed drain current (I_DM) handles inrush of capacitive loads; TO-252 footprint simplifies PCB layout and thermal management.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12 V to 5 V/3.3 V point-of-load conversion in industrial PLC modules.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–500 kHz with 14 A peak current capability.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 25 nC Q_g enables efficient gate drive with low-power controllers.

Use Scenario: H-bridge half-bridge leg for 24 V brushed motor control in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 10 A continuous current with body diode freewheeling.

Use Value: 1.5 V V_SD and 88–180 ns t_rr reduce reverse recovery loss; 5.5 V/ns dV/dt rating prevents shoot-through during commutation.

LED Constant-Current Driver

Industrial Load Switch

Use Scenario: Dimmable 48 V LED string driver with PWM dimming and overcurrent protection.

IC Role / Device Role / Timing Role: Main series-pass switch modulated at 1–20 kHz to regulate average LED current.

Use Value: 60 V V_DS accommodates LED string voltage plus ripple; 9.0 A I_D @ 100 °C supports full-load operation in enclosed enclosures.

Use Scenario: Remote-controlled 24 V power distribution for sensor nodes in factory automation.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay, supporting 100,000+ cycles with zero contact bounce.

Use Value: 56 A pulsed drain current (I_DM) handles inrush of capacitive loads; TO-252 footprint simplifies PCB layout and thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR020-GE3	Same die, identical R_DS(on), Q_g, and avalanche rating; Pb-free/halogen-free construction per JEDEC J-STD-609	No functional difference; preferred for RoHS-compliant production and lead-free soldering processes	Select SiHFR020-GE3 when compliance with latest environmental standards is mandatory and tape-and-reel packaging is required.
IRFU020	Same electrical specs but IPAK (TO-251) package - no exposed drain pad, higher R_thJA = 110 °C/W, lower PCB-mount power dissipation (2.5 W vs. 42 W case-mounted)	Less effective thermal transfer; unsuitable for high-current continuous operation without heatsink	Choose IRFU020 only if through-hole assembly is required or board space constraints preclude DPAK mounting.

Compared with IRFR020, SiHFR020-GE3 offers identical performance with enhanced environmental compliance, while IRFU020 trades thermal efficiency for through-hole compatibility - making IRFR020 the optimal choice for surface-mount, high-current, thermally constrained designs.

Availability

IRFR020 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and industrial load switching requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFR020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFR020 belongs to Vishay's third-generation power MOSFET family engineered for high-speed switching, low R_DS(on), and robust avalanche performance in industrial and automotive power systems.

FAQ

What is the maximum continuous drain current for IRFR020 at 100 °C case temperature?

The IRFR020 supports 9.0 A continuous drain current when the case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 14 A rating at 25 °C case temperature and must be validated against actual PCB layout and airflow conditions in the target application. The IRFR020's linear derating factor is 0.33 W/°C above 25 °C case temperature.

Does IRFR020 have a built-in body diode, and what are its key parameters?

Yes, the IRFR020 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 14 A continuous source-drain current (I_S), 56 A pulsed forward current (I_SM), 1.5 V forward voltage (V_SD) at 14 A and 25 °C, and 88–180 ns reverse recovery time (t_rr) under standardized test conditions. These values directly impact freewheeling loss and EMI in hard-switched topologies using the IRFR020.

What is the gate threshold voltage range for IRFR020, and how does it affect drive compatibility?

IRFR020 has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, confirming compatibility with standard 5 V logic-level gate drivers and many microcontroller GPIO outputs. This allows direct drive without level-shifting circuitry, though full enhancement to R_DS(on) = 0.10 Ω requires V_GS ≥ 10 V. The IRFR020's moderate threshold spread ensures predictable turn-on behavior across temperature and process variation.

Can IRFR020 be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the IRFR020 is rated for repetitive unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 91 mJ under defined test conditions (V_DD = 25 V, I_AS = 14 A). This capability enables robust operation in motor drive, solenoid, and relay-driving applications where inductive kickback occurs. The IRFR020's avalanche rating is validated per JEDEC guidelines and must be applied within the safe operating area defined in the datasheet.

What is the thermal resistance from junction to ambient for IRFR020 when mounted on a standard PCB?

When mounted on a 1" square FR-4 or G-10 PCB, the IRFR020 exhibits a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W. This value enables 2.5 W continuous power dissipation at 25 °C ambient temperature without additional heatsinking. For higher power operation, the IRFR020's exposed drain pad must be connected to a large copper pour or external heatsink to leverage its 3.0 °C/W junction-to-case (R_thJC) rating.

IRFR020 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR020 FAQ

1.How can I place an order for IRFR020 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR020 reliable?

The price and inventory of IRFR020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR020 is usually 5 days.

3.What payment methods are accepted for IRFR020?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR020 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR020?

IRFR020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR020 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR020?

For technical support, including IRFR020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR020 requirements.

6.How does Aetrix verify that IRFR020 is sourced from the original manufacturer or authorized distributors?

All IRFR020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR020 meets industry standards.

7.What is the process for return or replacement of IRFR020?

All IRFR020 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR020, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR020 part is unused and in its original packaging.

Return procedure for IRFR020:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …