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Vishay Siliconix IRFR020PBF
- Part No.:
- IRFR020PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR020PBF.pdf
- Description:
- MOSFET N-CH 60V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,376
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Product details
Overview
IRFR020PBF from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy - designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR020PBF datasheet, IRFR020PBF pinout, IRFR020PBF application, or IRFR020PBF equivalent, key selection criteria include its dynamic dV/dt rating (5.5 V/ns), fast switching performance (13 ns turn-on delay, 42 ns fall time), ruggedized avalanche capability, and compatibility with vapor-phase and wave soldering processes on FR-4 PCBs.
Technical Context
This third-generation power MOSFET employs planar V-groove technology to achieve low conduction loss and high switching robustness. Its gate threshold voltage (2.0–4.0 V) ensures reliable enhancement-mode operation, while the integrated body diode supports synchronous rectification and inductive load commutation.
The device's thermal design targets junction-to-case resistance of 3.0 °C/W and junction-to-ambient resistance of 50 °C/W when mounted on a 1" square FR-4 PCB - enabling stable 9.0 A continuous current at TC = 100 °C without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage for 24 V/48 V bus applications with margin |
| RDS(on) @ VGS = 10 V | 0.10 Ω - enables ≤1.2 W conduction loss at 14 A, reducing heatsink requirements |
| Qg | 25 nC - determines gate drive power and switching speed in PWM circuits |
| ID (TC = 25 °C) | 14 A - continuous drain current rating under ideal heatsinking conditions |
| EAS | 91 mJ - unclamped inductive switching energy tolerance without failure |
| dV/dt Rating | 5.5 V/ns - suppresses false turn-on during high-speed voltage transients |
| RthJC | 3.0 °C/W - defines thermal path efficiency from die to PCB copper pour or heatsink |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Receives 10 V logic-level drive; 5.8 nC gate-source charge enables simple driver IC interface |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full load current and dissipates heat into PCB copper |
| S (Source) | Power return / reference node | Common source node for gate drive referencing; low-inductance layout critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.5 V/ns - prevents spurious turn-on in noisy half-bridge or flyback environments |
| Fast switching | 13 ns td(on), 42 ns tf - reduces switching losses in 100–500 kHz SMPS designs |
| Easy paralleling | Positive RDS(on) temperature coefficient - ensures current sharing across multiple devices |
| Ruggedized construction | 91 mJ EAS - withstands inductive kickback in motor drives and solenoid controls without snubbers |
| Surface-mount compatibility | DPAK footprint - supports reflow, vapor-phase, and wave soldering per JEDEC standards |
Applications
| DC-DC Converters | Motor Control |
|---|---|
|
Use Scenario: Step-down (buck) converter in industrial PLC power modules operating at 200 kHz. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch handling 12 V input, 5 V/10 A output. Use Value: 0.10 Ω RDS(on) minimizes conduction loss; 25 nC Qg enables efficient gate driving with low-power controllers. |
Use Scenario: H-bridge driver for 24 V brushed DC motors in automated conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and braking via PWM. Use Value: 91 mJ EAS safely clamps inductive energy during rapid PWM turn-off; 5.5 V/ns dV/dt rating prevents shoot-through. |
| Load Switching | Power OR-ing |
|
Use Scenario: Hot-swap protection circuit in redundant 48 V telecom power distribution units. IC Role / Device Role / Timing Role: Inrush-limited main power switch with controlled turn-on via gate resistor network. Use Value: 14 A continuous rating supports 600 W loads; body diode VSD = 1.5 V enables low-loss reverse-current blocking. |
Use Scenario: Redundant power supply OR-ing in server backplanes using ideal diode configuration. IC Role / Device Role / Timing Role: Forward-conducting MOSFET replacing Schottky diodes to reduce forward drop and heat. Use Value: RDS(on) = 0.10 Ω yields <0.15 V drop at 15 A - cutting conduction loss by >70% vs. 0.45 V Schottky. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiHFR020-GE3 | Same silicon die, lead (Pb)-free and halogen-free; identical RDS(on), Qg, and EAS | No functional difference; qualified for RoHS-compliant and green manufacturing lines | Select SiHFR020-GE3 for new designs requiring full environmental compliance without derating. |
| IRFU020PBF | IPAK (TO-251) package - same electrical specs but through-hole mounting; no exposed drain pad | Requires manual or wave-soldered through-hole assembly; lower thermal performance (RthJA = 110 °C/W vs. 50 °C/W) | Choose IRFU020PBF only when legacy through-hole layout or mechanical retention is required. |
Compared with IRFR020PBF, SiHFR020-GE3 offers identical performance with enhanced environmental compliance, while IRFU020PBF trades thermal efficiency and surface-mount automation for through-hole mechanical stability - making IRFR020PBF optimal for high-density, thermally constrained SMT power stages.
Availability
IRFR020PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and embedded load switching applications requiring stable component supply and long-term production continuity.
Supply support for IRFR020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR020PBF belongs to Vishay's third-generation power MOSFET family, engineered specifically for high-efficiency, high-ruggedness switching in industrial and telecom power systems where avalanche tolerance and thermal stability are critical.
FAQ
What is the maximum continuous drain current for IRFR020PBF at 100 °C case temperature?
The IRFR020PBF supports 9.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1" square FR-4) and accounts for linear derating of 0.33 W/°C above 25 °C ambient. The device maintains safe operation up to 150 °C junction temperature under these conditions.
Does IRFR020PBF require a gate driver IC, or can it be driven directly from a microcontroller GPIO?
The IRFR020PBF has a gate threshold voltage of 2.0–4.0 V and requires 10 V for full enhancement, so direct microcontroller GPIO (typically 3.3 V or 5 V) will not fully turn it on. Driving IRFR020PBF reliably demands a dedicated gate driver or level-shifting circuit to deliver ≥10 V with sufficient peak current (≥1 A) to charge its 25 nC total gate charge within nanoseconds.
What is the thermal resistance from junction to ambient for IRFR020PBF when mounted on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR020PBF exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes standard layout practices per Application Note 826 and enables calculation of junction temperature rise: TJ = TA + (Ptot × 50). For higher power, adding thermal vias under the drain pad further improves heat transfer.
Is IRFR020PBF suitable for avalanche-rated operation, and what is its rated single-pulse energy?
Yes, IRFR020PBF is explicitly rated for repetitive and single-pulse avalanche operation, with a guaranteed 91 mJ unclamped inductive switching energy (EAS) at TJ = 25 °C. This rating is validated per test condition b in the datasheet (VDD = 25 V, IAS = 14 A) and allows safe use in inductive load switching without external snubbers in many industrial applications.
What are the recommended PCB pad dimensions for IRFR020PBF's DPAK (TO-252) package?
Vishay recommends minimum PCB pads per Application Note 826: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal pad, with 0.055" (1.397 mm) clearance to adjacent traces. Gate and source pads should be ≥0.090" (2.29 mm) wide. Use ≥4 thermal vias (0.3 mm diameter) under the drain pad to enhance heat dissipation to inner layers.
IRFR020PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR020PBF FAQ
1.How can I place an order for IRFR020PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR020PBF reliable?
The price and inventory of IRFR020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR020PBF is usually 5 days.
3.What payment methods are accepted for IRFR020PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR020PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR020PBF?
IRFR020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR020PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR020PBF?
For technical support, including IRFR020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR020PBF requirements.
6.How does Aetrix verify that IRFR020PBF is sourced from the original manufacturer or authorized distributors?
All IRFR020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR020PBF meets industry standards.
7.What is the process for return or replacement of IRFR020PBF?
All IRFR020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR020PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR020PBF part is unused and in its original packaging.
Return procedure for IRFR020PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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