Vishay Siliconix IRFR020TR

Overview

IRFR020TR from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy - designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR020TR datasheet, IRFR020TR pinout, IRFR020TR application, or IRFR020TR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 88–180 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for high-reliability 60 V switching designs.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining rugged unclamped inductive switching capability. Its 3.0 °C/W junction-to-case thermal resistance enables efficient heat transfer to a heatsink or copper pour.

The device supports fast switching with 13 ns turn-on delay, 58 ns rise time, and 42 ns fall time under standardized test conditions (V_DD = 30 V, I_D = 17 A, R_G = 18 Ω), and exhibits dynamic dV/dt immunity up to 5.5 V/ns - critical for noise-immune operation in high-frequency SMPS topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard footprint per Vishay Application Note 826 (10.67 mm × 5.69 mm pad layout recommended).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR020TR, SiHFR020TR-GE3 offers measurable gate-drive efficiency gains in high-frequency operation, while IRLR020TRPbF trades surface-mount convenience for higher thermal capacity - making IRFR020TR optimal for space-constrained, medium-power SMT applications where PCB thermal design is tightly controlled.

Availability

IRFR020TR is available at Aetrix Electronics and suitable for industrial power supplies, motor controllers, and LED drivers requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFR020TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive environments.

The IRFR020TR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for high-efficiency, high-density DC-DC conversion and robust load switching in space-constrained applications.

FAQ

What is the maximum continuous drain current for IRFR020TR at 100 °C case temperature?

The IRFR020TR supports 9.0 A continuous drain current when the case temperature reaches 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB copper area and airflow conditions in the end application. The IRFR020TR datasheet confirms this rating applies with proper heatsinking or large thermal pads.

Does IRFR020TR have a built-in body diode, and what are its key parameters?

Yes, the IRFR020TR integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 14 A continuous source-drain current, 56 A pulsed forward current, 1.5 V forward voltage at 14 A and 25 °C, and reverse recovery time of 88–180 ns at 25 °C with 100 A/μs dI/dt. These values are measured under defined test conditions and directly impact performance in synchronous rectification and freewheeling applications.

Is IRFR020TR RoHS-compliant and halogen-free?

Yes, IRFR020TRRPbF is explicitly designated as lead (Pb)-free and halogen-free per Vishay's ordering information and material categorization documentation. It complies with EU RoHS Directive 2011/65/EU and meets Vishay's internal halogen-free standard (≤900 ppm bromine, ≤900 ppm chlorine, ≤1500 ppm total halogens), as confirmed in document 90335 and supporting compliance reports.

What is the gate threshold voltage range for IRFR020TR, and how does it affect drive compatibility?

The IRFR020TR has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at 250 μA drain current, enabling reliable turn-on with standard 5 V logic or 3.3 V microcontroller outputs. This range ensures compatibility with common gate drivers while maintaining noise immunity - critical for stable operation in electrically noisy industrial environments where the IRFR020TR is commonly deployed.

Can IRFR020TR be used in linear (ohmic) mode for constant-current regulation?

Yes, the IRFR020TR is rated for linear-mode operation with a Safe Operating Area (SOA) curve provided in Figure 8 of the datasheet. At 25 °C, it supports 14 A at 10 V V_DS for DC operation, decreasing with increasing V_DS and temperature. Designers must strictly observe SOA boundaries and implement thermal monitoring, as power dissipation in linear mode depends on both V_DS and I_D; the IRFR020TR's 3.0 °C/W R_thJC enables effective heatsink coupling in such applications.