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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR020TRPBF

Name: IRFR020TRPBF
Brand: Vishay Siliconix
SKU: IRFR020TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR020TRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR020TRPBF.pdf

Description:: MOSFET N-CH 60V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR020TRPBF from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package with 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR020TRPBF datasheet, IRFR020TRPBF pinout, IRFR020TRPBF application, or IRFR020TRPBF equivalent, key selection criteria include its 60 V V_DS, 0.10 Ω on-resistance at 10 V drive, 25 nC Q_g, 50 °C/W junction-to-ambient thermal resistance on PCB mount, and ruggedized unclamped inductive switching capability.

Technical Context

This third-generation TrenchFET® MOSFET uses silicon process optimization to achieve low R_DS(on) while maintaining high dV/dt immunity (5.5 V/ns) and robust avalanche performance. Its dynamic characteristics include 640 pF C_iss, 79 pF Cr_ss, and fast switching with 13 ns turn-on delay and 42 ns fall time under standard test conditions.

The device integrates a low-V_SD body diode (1.5 V at 14 A, 25 °C) with 88–180 ns reverse recovery time and supports parallel operation due to positive temperature coefficient of R_DS(on). Gate threshold voltage is specified from 2.0 V to 4.0 V, enabling compatibility with standard 10 V logic-level drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 24 V and 48 V bus applications
R_DS(on) @ V_GS = 10 V	0.10 Ω - enables <1.4 W conduction loss at 14 A continuous drain current
Q_g (total)	25 nC - determines gate drive power requirement and switching speed in hard-switched topologies
E_AS	91 mJ - specifies energy-handling capability during unclamped inductive turn-off events
R_thJA (PCB mount)	50 °C/W - defines thermal rise above ambient when mounted on 1"² FR-4 PCB without heatsink
I_D (T_C = 100 °C)	9.0 A - derated continuous current limit at case temperature of 100 °C
V_GS(th)	2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard logic-level gate drivers

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; designed for vapor-phase, infrared, or wave soldering on FR-4 PCBs using recommended minimum pad layout per Application Note 826.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤ ±20 V rating; 5.8 nC Q_gs defines Miller plateau duration
D	Drain	Main power output terminal; electrically and thermally connected to exposed copper tab (pin 1/2/3 shared)
S	Source	Power return and reference node; internal source inductance LS = 7.5 nH affects switching waveform ringing

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.5 V/ns - prevents false turn-on during high-speed voltage transients in noisy power environments
Fast switching	13 ns t_d(on), 42 ns t_f - reduces switching losses in PWM frequencies up to 500 kHz
Ease of paralleling	Positive R_DS(on) temperature coefficient - enables stable current sharing across multiple devices without ballasting resistors
Simple drive requirements	2.0–4.0 V V_GS(th) and 25 nC Q_g - compatible with microcontroller GPIO or low-power gate drivers
Ruggedized design	91 mJ E_AS and 56 A I_DM - withstands inductive kickback in relay/motor drive without external snubbers

Applications

DC-DC Converter Primary Switch	Motor Drive High-Side Switch
Use Scenario: Step-down (buck) converter in 24 V industrial power supply delivering up to 10 A output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor; operates at 200–500 kHz PWM. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 25 nC Q_g enables efficient gate drive with low-side driver ICs like TC4427.	Use Scenario: Brushed DC motor control in automated gate operator with 36 V nominal supply. IC Role / Device Role / Timing Role: High-side load switch enabling bidirectional current flow via H-bridge configuration. Use Value: 60 V V_DS provides margin over 36 V bus; 91 mJ E_AS absorbs inductive flyback during PWM commutation.
Load Switch for Industrial PLC Output	Hot-Swap Controller Back-End FET
Use Scenario: Solid-state replacement for electromechanical relay in programmable logic controller output module. IC Role / Device Role / Timing Role: Low-loss, high-reliability power switch isolating field loads (solenoids, indicators) from controller logic. Use Value: 14 A continuous rating supports 10 A loads with thermal headroom; TO-252 footprint allows direct PCB replacement of legacy DPAK relays.	Use Scenario: Inrush current limiting and fault protection in 12 V/48 V backplane hot-swap circuit. IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4211) to manage startup slew rate and overcurrent shutdown. Use Value: 0.10 Ω R_DS(on) limits I²R heating during sustained 8 A operation; 50 °C/W R_thJA enables thermal management without heatsink.

DC-DC Converter Primary Switch

Motor Drive High-Side Switch

Use Scenario: Step-down (buck) converter in 24 V industrial power supply delivering up to 10 A output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor; operates at 200–500 kHz PWM.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss; 25 nC Q_g enables efficient gate drive with low-side driver ICs like TC4427.

Use Scenario: Brushed DC motor control in automated gate operator with 36 V nominal supply.

IC Role / Device Role / Timing Role: High-side load switch enabling bidirectional current flow via H-bridge configuration.

Use Value: 60 V V_DS provides margin over 36 V bus; 91 mJ E_AS absorbs inductive flyback during PWM commutation.

Load Switch for Industrial PLC Output

Hot-Swap Controller Back-End FET

Use Scenario: Solid-state replacement for electromechanical relay in programmable logic controller output module.

IC Role / Device Role / Timing Role: Low-loss, high-reliability power switch isolating field loads (solenoids, indicators) from controller logic.

Use Value: 14 A continuous rating supports 10 A loads with thermal headroom; TO-252 footprint allows direct PCB replacement of legacy DPAK relays.

Use Scenario: Inrush current limiting and fault protection in 12 V/48 V backplane hot-swap circuit.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC (e.g., LTC4211) to manage startup slew rate and overcurrent shutdown.

Use Value: 0.10 Ω R_DS(on) limits I²R heating during sustained 8 A operation; 50 °C/W R_thJA enables thermal management without heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR020-GE3	Same die, lead-free/halogen-free construction; identical R_DS(on), Q_g, and avalanche rating	No functional difference; preferred for RoHS-compliant designs requiring JEDEC-standard green packaging	Select SiHFR020-GE3 when lead-free compliance and halogen-free material declaration are mandatory per IPC-1752A.
IRLR024TRPBF	Lower 55 V V_DS, 0.077 Ω R_DS(on), 21 nC Q_g; smaller DPAK variant with same pinout	Better efficiency at ≤24 V systems but reduced voltage margin; not suitable for 48 V bus applications	Choose IRLR024TRPBF only if system V_IN stays below 40 V and lower conduction loss justifies tighter voltage margin.

Compared with IRFR020TRPBF, SiHFR020-GE3 offers identical electrical performance with enhanced environmental compliance, while IRLR024TRPBF trades voltage headroom for lower R_DS(on) and gate charge-making it viable only in sub-40 V designs where 60 V rating is unnecessary.

Availability

IRFR020TRPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and PLC output modules requiring stable component supply and long-term manufacturability.

Supply support for IRFR020TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high reliability and power efficiency.

The IRFR020TRPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-current, medium-voltage switching in space-constrained industrial and automotive-qualified power systems.

FAQ

What is the maximum continuous drain current for IRFR020TRPBF at 100 °C case temperature?

The IRFR020TRPBF supports 9.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and airflow conditions in the end application. The IRFR020TRPBF datasheet confirms this value with linear derating factor of 0.33 W/°C above 25 °C case temperature.

Does IRFR020TRPBF have avalanche capability, and how is it rated?

Yes, the IRFR020TRPBF is rated for single-pulse avalanche energy of 91 mJ under defined test conditions (V_DD = 25 V, I_AS = 14 A, L = 541 μH, R_g = 25 Ω). This rating ensures survivability during unclamped inductive switching events common in motor and relay drive circuits. The IRFR020TRPBF does not specify repetitive avalanche capability, so system design must avoid repeated exposure to such stress.

What is the gate threshold voltage range for IRFR020TRPBF, and why does it matter?

The IRFR020TRPBF has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures consistent turn-on behavior across process variation and temperature, allowing reliable operation with standard 3.3 V or 5 V logic-level drivers. Because the IRFR020TRPBF is not a logic-level part, full enhancement requires ≥10 V V_GS to achieve its specified 0.10 Ω R_DS(on).

Can IRFR020TRPBF be used in parallel configurations, and what design considerations apply?

Yes, the IRFR020TRPBF is optimized for paralleling due to its positive temperature coefficient of R_DS(on), which promotes natural current sharing. To implement parallel operation, use matched gate resistors, symmetrical PCB layout with equal trace lengths, and ensure adequate thermal coupling between devices. The IRFR020TRPBF datasheet explicitly cites "ease of paralleling" as a key feature, supported by its thermal and electrical stability under load imbalance.

What is the thermal resistance from junction to ambient for IRFR020TRPBF when mounted on a standard PCB?

When mounted on a 1" square FR-4 PCB (per note e in the datasheet), the IRFR020TRPBF exhibits a maximum junction-to-ambient thermal resistance (R_thJA) of 50 °C/W. This value assumes no external heatsink and is critical for calculating worst-case junction temperature under continuous operation. The IRFR020TRPBF's DPAK package relies heavily on PCB copper area for heat dissipation, so thermal pad layout per Application Note 826 directly impacts this parameter.

IRFR020TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR020TRPBF FAQ

1.How can I place an order for IRFR020TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR020TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR020TRPBF reliable?

The price and inventory of IRFR020TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR020TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR020TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR020TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR020TRPBF?

IRFR020TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR020TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR020TRPBF?

For technical support, including IRFR020TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR020TRPBF requirements.

6.How does Aetrix verify that IRFR020TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR020TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR020TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR020TRPBF?

All IRFR020TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR020TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR020TRPBF part is unused and in its original packaging.

Return procedure for IRFR020TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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