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Vishay Siliconix IRFR024PBF
- Part No.:
- IRFR024PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR024PBF.pdf
- Description:
- MOSFET N-CH 60V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,755
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Product details
Overview
IRFR024PBF from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy - designed for DC-DC converters, motor control, and load switching where fast switching and ruggedness are required.
For engineers reviewing the IRFR024PBF datasheet, IRFR024PBF pinout, IRFR024PBF application, or IRFR024PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, PCB-mount power dissipation limits, and validated alternative parts for industrial power stage design.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low on-resistance with fast switching (13 ns turn-on delay, 42 ns fall time) while maintaining robust unclamped inductive switching capability up to 91 mJ. Its dynamic dV/dt rating of 5.5 V/ns supports reliable operation in noisy high-speed switching environments.
The device integrates a low-VF body diode (1.5 V at 14 A, 25 °C) with 88–180 ns reverse recovery time and 0.29–0.64 μC Qrr, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V transients. |
| RDS(on) @ VGS = 10 V | 0.10 Ω - Enables ≤1.76 W conduction loss at 14 A DC, supporting compact thermal design on FR-4 PCBs. |
| ID Continuous @ TC = 25 °C | 14 A - Sustained current capability when mounted on heatsink or thermally enhanced DPAK footprint. |
| Qg Total | 25 nC - Determines gate drive power requirement; enables <100 ns full-switching with 25 Ω driver. |
| EAS | 91 mJ - Quantifies unclamped inductive energy handling; allows safe operation in relay/snubberless inductive loads. |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance confirms direct heatsink mounting viability for high-power density layouts. |
| VGS(th) | 2.0–4.0 V - Standard-threshold logic-level gate enables direct drive from 5 V microcontrollers or PWM controllers. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level signal; 5.8 nC gate-source charge enables low-drive-current switching. |
| D (Drain) | High-side current path | Exposed metal tab - electrically connected to drain; must be isolated from other nets unless used as heatsink return. |
| S (Source) | Reference node / current return | Common source node for gate drive reference and load current return; ties to power ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.5 V/ns - Prevents false turn-on during high-slew-rate voltage transients in motor drives and SMPS. |
| Fast switching | 13 ns td(on), 42 ns tf - Reduces switching losses in 100–500 kHz DC-DC converters and Class-D amplifiers. |
| Ease of paralleling | Positive temperature coefficient of RDS(on) - Ensures self-balancing current sharing across multiple IRFR024PBF devices. |
| Surface-mount (DPAK) | Compatible with vapor-phase and IR reflow - eliminates through-hole drilling; supports high-density power module layout. |
| Ruggedized construction | 91 mJ EAS, 56 A IDM - Withstands repetitive inductive kickback in solenoid drivers and H-bridge motor controls. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V input to 12 V/5 V output in telecom power supplies and industrial PLCs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz with 10 V gate drive. Use Value: 0.10 Ω RDS(on) minimizes conduction loss; 25 nC Qg enables efficient gate driving with low-cost 5 V logic buffers. |
Use Scenario: Half-bridge H-bridge controlling bidirectional 24 V brushed motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 1.5 V VSD and 88–180 ns trr reduce freewheeling loss and EMI vs. discrete diode solutions. |
| LED Constant-Current Driver | Power OR-ing Circuit |
Use Scenario: High-brightness LED string control in architectural lighting, using PWM dimming at 1–10 kHz. IC Role / Device Role / Timing Role: Series pass switch modulating current through constant-current LED load. Use Value: 14 A continuous rating supports >100 W LED arrays; low RDS(on) avoids thermal derating at ambient >60 °C. |
Use Scenario: Redundant 24 V power supply selection in network switches and medical equipment. IC Role / Device Role / Timing Role: Ideal diode replacement with forward voltage drop replaced by RDS(on)-based loss. Use Value: 0.10 Ω RDS(on) yields <150 mW loss at 12 A - significantly lower than Schottky diode forward drop at same current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR024ZPBF | Same 60 V VDS, but 0.055 Ω RDS(on), 43 nC Qg, DPAK package - higher conduction efficiency, slower switching. | Better for low-frequency, high-current linear or PWM applications where gate drive strength permits higher Qg. | Select IRFR024PBF when faster switching (25 nC vs. 43 nC) and lower gate drive demand are prioritized over minimal RDS(on). |
| SiHFR024-GE3 | Identical electrical specs and DPAK package; Vishay's lead-free/halogen-free variant with GE3 suffix and alternate manufacturing location. | No functional difference; suitable for RoHS-compliant production requiring Pb-free soldering profiles. | Choose SiHFR024-GE3 for new designs targeting IPC-J-STD-020-compliant reflow and environmental compliance mandates. |
Compared with IRFR024PBF, IRLR024ZPBF trades faster switching for lower conduction loss, while SiHFR024-GE3 offers identical performance with updated material compliance - making IRFR024PBF optimal for legacy-compatible, high-speed 48 V power stages needing proven reliability and minimal gate drive overhead.
Availability
IRFR024PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and LED current regulators requiring stable component supply across industrial, telecom, and embedded power applications.
Supply support for IRFR024PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR024PBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency, high-ruggedness switching in space-constrained surface-mount power stages.
FAQ
What is the maximum continuous drain current for IRFR024PBF at 100 °C case temperature?
The IRFR024PBF supports 9.0 A continuous drain current at TC = 100 °C, reflecting its thermal derating slope of 0.33 W/°C above 25 °C. This value is critical for thermal design validation in enclosed enclosures or stacked PCBs where case temperature exceeds ambient. The IRFR024PBF's RthJC of 3.0 °C/W enables effective heatsinking to maintain junction temperature below 150 °C under sustained load.
Does IRFR024PBF have avalanche capability, and how is it rated?
Yes, the IRFR024PBF is rated for 91 mJ single-pulse avalanche energy (EAS) under defined test conditions (VDD = 25 V, IAS = 14 A, TJ = 25 °C). This specification confirms its ability to safely absorb inductive energy during unclamped switching events - essential for relay drivers, solenoid controls, and fault-tolerant motor circuits. The IRFR024PBF does not specify repetitive avalanche rating, so system-level protection must limit event frequency.
What is the gate threshold voltage range for IRFR024PBF, and how does it affect drive compatibility?
The IRFR024PBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This standard-threshold characteristic ensures reliable turn-on with 5 V logic signals and compatibility with common PWM controllers and microcontroller GPIOs. Because the IRFR024PBF is not a logic-level MOSFET, it requires ≥4.5 V gate drive for full enhancement - unlike sub-2 V threshold variants that risk partial turn-on with noise coupling.
Can IRFR024PBF be used in parallel configurations, and what design considerations apply?
Yes, the IRFR024PBF is explicitly designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes natural current balancing as temperature rises. To implement parallel operation, use matched gate resistors (≤5 Ω), symmetrical PCB layout with equal trace lengths, and shared source inductance minimization. The IRFR024PBF's low Qgd/Qgs ratio (11 nC / 5.8 nC ≈ 1.9) further enhances dynamic current sharing stability during switching transitions.
What is the body diode forward voltage and reverse recovery behavior of IRFR024PBF?
The IRFR024PBF body diode exhibits a forward voltage (VSD) of 1.5 V at IS = 14 A and TJ = 25 °C, with reverse recovery time (trr) ranging from 88 ns to 180 ns depending on di/dt and temperature. Its Qrr is 0.29–0.64 μC, indicating moderate stored charge - suitable for non-synchronous buck topologies but less ideal than ultra-fast diodes for high-frequency ZVS designs. The IRFR024PBF's body diode performance is fully characterized in the datasheet's Fig. 6 and Fig. 7.
IRFR024PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR024PBF FAQ
1.How can I place an order for IRFR024PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR024PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR024PBF reliable?
The price and inventory of IRFR024PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR024PBF is usually 5 days.
3.What payment methods are accepted for IRFR024PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR024PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR024PBF?
IRFR024PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR024PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR024PBF?
For technical support, including IRFR024PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR024PBF requirements.
6.How does Aetrix verify that IRFR024PBF is sourced from the original manufacturer or authorized distributors?
All IRFR024PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR024PBF meets industry standards.
7.What is the process for return or replacement of IRFR024PBF?
All IRFR024PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR024PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR024PBF part is unused and in its original packaging.
Return procedure for IRFR024PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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