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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR024TR

Name: IRFR024TR
Brand: Vishay Siliconix
SKU: IRFR024TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR024TR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR024TR.pdf

Description:: MOSFET N-CH 60V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR024TR from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω R_DS(on) at V_GS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy - deployed in DC-DC converters, motor drivers, and load-switching circuits requiring fast switching and ruggedized operation.

For engineers reviewing the IRFR024TR datasheet, IRFR024TR pinout, IRFR024TR application, or IRFR024TR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 88–180 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for industrial power stage redesigns.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon process and package design to achieve low conduction loss and high dV/dt immunity (5.5 V/ns). Its dynamic performance is characterized by 13 ns turn-on delay, 58 ns rise time, and 42 ns fall time under standard test conditions (V_DD = 30 V, I_D = 17 A, R_G = 18 Ω).

The device integrates a robust intrinsic body diode with 1.5 V forward voltage at 14 A and 0.29–0.64 μC reverse recovery charge, enabling reliable unclamped inductive switching. Thermal resistance is specified as R_thJC = 3.0 °C/W (junction-to-case) and R_thJA = 50 °C/W (PCB mount), supporting stable operation up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage for 24 V/48 V bus applications
R_DS(on)	0.10 Ω @ V_GS = 10 V - enables ≤1.2 W conduction loss at 14 A continuous drain current
Q_g	25 nC - determines gate drive power requirement and switching speed control
E_AS	91 mJ - supports safe operation during unclamped inductive turn-off events
t_rr	88–180 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge topologies
P_D (PCB mount)	2.5 W @ T_A = 25 °C - sets practical power handling limit on standard FR-4 PCB without heatsink
dV/dt rating	5.5 V/ns - ensures immunity against false turn-on in high-noise power converter environments

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V enables compatibility with standard microcontroller GPIO
D (Drain)	High-side switch node	Exposed metal tab connects directly to PCB copper pour for thermal management and low-inductance current return path
S (Source)	Power reference / return	Provides low-impedance source connection; internal source inductance 7.5 nH affects high-speed switching waveform fidelity

Key Features

Feature	Design Value
Dynamic dV/dt rating	5.5 V/ns immunity prevents spurious turn-on during fast voltage transients in buck or flyback converters
Fast switching	13 ns t_d(on), 42 ns t_f enable >500 kHz operation with minimized switching losses
Ease of paralleling	Positive temperature coefficient of R_DS(on) ensures current sharing stability across multiple devices
Surface-mount (DPAK)	Compatible with vapor-phase, infrared, and wave soldering; recommended pad layout defined per AN826
Ruggedized construction	91 mJ E_AS and 56 A pulsed drain current support reliable operation under overload and fault conditions

Applications

DC-DC Converter Switch	Motor Driver High-Side
Use Scenario: Primary switch in synchronous buck regulator for FPGA or ASIC core voltage rail (0.8–3.3 V, up to 15 A). IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input bus to output inductor; operates at 300–1000 kHz PWM frequency. Use Value: 0.10 Ω R_DS(on) minimizes conduction loss at full load; 25 nC Q_g allows efficient gate driving with low-power controllers.	Use Scenario: High-side switch in brushed DC motor H-bridge for industrial actuator control (24 V, 10 A peak). IC Role / Device Role / Timing Role: Unidirectional power delivery switch enabling forward motor rotation; commutated with complementary low-side FET. Use Value: 91 mJ E_AS withstands inductive kickback during PWM off-time; 5.5 V/ns dV/dt rating prevents false triggering from motor back-EMF spikes.
Load Switch	Hot-Swap Controller
Use Scenario: Inrush-limited power switch for 12 V system rail powering peripheral modules (e.g., sensors, communication ICs). IC Role / Device Role / Timing Role: Controlled ON/OFF pass element managing power delivery; driven via dedicated load switch controller or MCU GPIO. Use Value: Low 2.0–4.0 V V_GS(th) enables direct logic-level control; 14 A continuous rating supports multi-module loads.	Use Scenario: Primary pass element in hot-swap circuit protecting backplane from overcurrent during board insertion. IC Role / Device Role / Timing Role: Current-limiting and fault-isolation switch placed between supply and load; responds to current-sense amplifier feedback. Use Value: 56 A pulsed drain current (I_DM) accommodates startup surges; 150 °C max T_J ensures reliability during sustained fault conditions.

DC-DC Converter Switch

Motor Driver High-Side

Use Scenario: Primary switch in synchronous buck regulator for FPGA or ASIC core voltage rail (0.8–3.3 V, up to 15 A).

IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer from input bus to output inductor; operates at 300–1000 kHz PWM frequency.

Use Value: 0.10 Ω R_DS(on) minimizes conduction loss at full load; 25 nC Q_g allows efficient gate driving with low-power controllers.

Use Scenario: High-side switch in brushed DC motor H-bridge for industrial actuator control (24 V, 10 A peak).

IC Role / Device Role / Timing Role: Unidirectional power delivery switch enabling forward motor rotation; commutated with complementary low-side FET.

Use Value: 91 mJ E_AS withstands inductive kickback during PWM off-time; 5.5 V/ns dV/dt rating prevents false triggering from motor back-EMF spikes.

Load Switch

Hot-Swap Controller

Use Scenario: Inrush-limited power switch for 12 V system rail powering peripheral modules (e.g., sensors, communication ICs).

IC Role / Device Role / Timing Role: Controlled ON/OFF pass element managing power delivery; driven via dedicated load switch controller or MCU GPIO.

Use Value: Low 2.0–4.0 V V_GS(th) enables direct logic-level control; 14 A continuous rating supports multi-module loads.

Use Scenario: Primary pass element in hot-swap circuit protecting backplane from overcurrent during board insertion.

IC Role / Device Role / Timing Role: Current-limiting and fault-isolation switch placed between supply and load; responds to current-sense amplifier feedback.

Use Value: 56 A pulsed drain current (I_DM) accommodates startup surges; 150 °C max T_J ensures reliability during sustained fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR024PbF	Same die, identical specs, but supplied in bulk (non-tape-and-reel) packaging	No functional difference; used where reel feed is not required for SMT line	Select IRFR024PbF for manual prototyping or low-volume hand assembly
SiHFR024TR-GE3	Same R_DS(on), Q_g, and thermal specs; halogen-free, RoHS-compliant variant with GE3 suffix	Identical electrical and mechanical performance; preferred for strict environmental compliance programs	Choose SiHFR024TR-GE3 when lead-free/halogen-free certification is mandatory

Compared with IRFR024TR, IRFR024PbF offers identical performance in non-reel form factor, while SiHFR024TR-GE3 provides identical functionality with enhanced material compliance - both preserve the same 0.10 Ω on-resistance, 25 nC gate charge, and DPAK thermal interface for drop-in validation in existing layouts.

Availability

IRFR024TR is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and load-switching applications requiring stable component supply, long-term manufacturability, and consistent parametric performance across production batches.

Supply support for IRFR024TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFR024TR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial power supplies, motor controls, and embedded power systems.

FAQ

What is the maximum continuous drain current for IRFR024TR at 100 °C case temperature?

The IRFR024TR supports 9.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and ambient conditions. The IRFR024TR's R_thJC = 3.0 °C/W enables effective heat transfer to external copper, making it suitable for thermally constrained designs when properly mounted.

Does IRFR024TR require a gate driver IC, or can it be driven directly from a microcontroller?

The IRFR024TR can be driven directly from most 3.3 V or 5 V microcontroller GPIO pins due to its 2.0–4.0 V gate threshold voltage and moderate 25 nC total gate charge. However, for high-frequency switching (>200 kHz) or high-current loads, a dedicated gate driver improves rise/fall times and reduces switching losses. The IRFR024TR's simple drive requirements make it well-suited for cost-sensitive, space-constrained applications where external drivers are omitted.

What is the avalanche capability of IRFR024TR, and how is it tested?

The IRFR024TR is rated for 91 mJ single-pulse avalanche energy (E_AS) under test conditions of V_DD = 25 V, starting T_J = 25 °C, L = 541 μH, and R_g = 25 Ω. This rating confirms ruggedness during unclamped inductive switching events, such as freewheeling diode failure or sudden load disconnection. The IRFR024TR's avalanche specification is validated per JEDEC standards and documented in Figure 12 of the official datasheet (S21-0466-Rev. E).

Is IRFR024TR compatible with lead-free reflow soldering processes?

Yes, IRFR024TR is qualified for lead-free reflow soldering with a peak temperature of 260 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. Its DPAK (TO-252) package meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements, and the "PbF" suffix explicitly denotes lead-free and RoHS-compliant construction. The IRFR024TR's thermal profile compatibility ensures robust assembly yield in modern SMT lines.

How does the body diode performance of IRFR024TR impact its use in synchronous rectification?

The IRFR024TR's body diode exhibits V_SD = 1.5 V at 14 A and t_rr = 88–180 ns, which limits efficiency in synchronous rectification compared to dedicated low-V_F Schottky diodes or optimized synchronous FETs. While usable in non-critical freewheeling roles, the IRFR024TR's body diode recovery charge (Q_rr = 0.29–0.64 μC) introduces switching loss and potential cross-conduction risk. For high-efficiency synchronous rectification, pairing the IRFR024TR with an external Schottky diode or selecting a FET with optimized body diode is recommended.

IRFR024TR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR024TR FAQ

1.How can I place an order for IRFR024TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR024TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR024TR reliable?

The price and inventory of IRFR024TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR024TR is usually 5 days.

3.What payment methods are accepted for IRFR024TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR024TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR024TR?

IRFR024TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR024TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR024TR?

For technical support, including IRFR024TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR024TR requirements.

6.How does Aetrix verify that IRFR024TR is sourced from the original manufacturer or authorized distributors?

All IRFR024TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR024TR meets industry standards.

7.What is the process for return or replacement of IRFR024TR?

All IRFR024TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR024TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR024TR part is unused and in its original packaging.

Return procedure for IRFR024TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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