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Vishay Siliconix IRFR024TRLPBF
- Part No.:
- IRFR024TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR024TRLPBF.pdf
- Description:
- MOSFET N-CH 60V 14A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
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Product details
Overview
IRFR024TRLPBF from Vishay Siliconix is a 60 V, 14 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 25 nC total gate charge, and 91 mJ single-pulse avalanche energy-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR024TRLPBF datasheet, IRFR024TRLPBF pinout, IRFR024TRLPBF application, or IRFR024TRLPBF equivalent, this part supports fast switching with low gate drive requirements, rugged unclamped inductive switching capability, and PCB-mount thermal performance up to 2.5 W-key selection criteria for high-reliability 24–48 V power stages.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry and packaging to achieve low conduction loss while maintaining robust dV/dt immunity (5.5 V/ns) and dynamic avalanche tolerance. Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under varying drive conditions.
The device integrates a fast-recovery body diode (trr = 88–180 ns, Qrr = 0.29–0.64 μC) and exhibits low internal inductance (LD = 4.5 nH, LS = 7.5 nH), enabling clean switching waveforms in hard-switched topologies without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and transient overvoltage margins. |
| RDS(on) @ VGS = 10 V | 0.10 Ω - Enables ≤1.4 W conduction loss at 14 A continuous drain current, reducing heatsink requirements. |
| Qg | 25 nC - Determines gate drive power and switching speed; enables <100 ns total switching time with 18 Ω gate resistor. |
| EAS | 91 mJ - Specifies unclamped inductive switching robustness; supports reliable operation in relay/snubberless solenoid drivers. |
| RthJA (PCB mount) | 50 °C/W - Thermal resistance when mounted on 1"² FR-4 PCB; allows 2.5 W power dissipation at 25 °C ambient. |
| ID (TC = 100 °C) | 9.0 A - Derated continuous current limit for sustained operation in enclosed industrial enclosures. |
| VGS(th) | 2.0–4.0 V - Gate threshold range ensures compatibility with 3.3 V and 5 V logic-level microcontrollers without level-shifting. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Recommended minimum PCB pad dimensions: 6.18 mm × 5.69 mm (243 mil × 224 mil) for drain tab, per Vishay Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–10 V logic-level drive; 5.8 nC gate-source charge enables low-power driver IC compatibility. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad on bottom of package; primary thermal path and current return for load-side switching. |
| S (Source) | Reference/return node | Common reference for gate drive and current sensing; internal source inductance (7.5 nH) affects di/dt-induced voltage overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.5 V/ns - Prevents false turn-on during high-speed switching transients in noisy industrial environments. |
| Fast switching | td(on) = 13 ns, tr = 58 ns - Reduces switching losses in 100–500 kHz DC-DC converters and PWM motor drives. |
| Body diode recovery | trr = 88–180 ns, Qrr = 0.29–0.64 μC - Minimizes reverse recovery loss and EMI in synchronous rectification and H-bridge freewheeling. |
| Surface-mount (DPAK) | Compatible with vapor phase, infrared, and wave soldering - Supports automated assembly in high-volume industrial PCB production. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A - Compliant for global industrial and automotive-qualified supply chains. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor High-Side Driver |
|---|---|
Use Scenario: Step-down converter in 24 V industrial PLC power module delivering 5 V/3 A to logic circuitry. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with 10 V gate drive from UC3843 controller. Use Value: 0.10 Ω RDS(on) limits conduction loss to 1.2 W at full load, enabling natural convection cooling without heatsink. |
Use Scenario: High-side drive for 12 V, 8 A brushed motor in automated valve actuator with direction reversal. IC Role / Device Role / Timing Role: Unidirectional load switch controlled by microcontroller GPIO with flyback diode protection. Use Value: 91 mJ EAS withstands inductive kickback during abrupt current interruption, eliminating need for external TVS. |
| LED Constant-Current Load Switch | Hot-Swap Controller Back-End FET |
Use Scenario: On/off control of 48 V, 2 A LED string in outdoor signage with dimming via PWM modulation. IC Role / Device Role / Timing Role: Low-side or high-side switching element modulated at 1–5 kHz to regulate average current. Use Value: Fast 58 ns rise time ensures minimal duty-cycle distortion and precise brightness control across temperature. |
Use Scenario: Inrush current limiting and fault isolation in redundant 48 V telecom power shelf with hot-plug capability. IC Role / Device Role / Timing Role: Back-end pass FET in discrete hot-swap circuit with current-sense amplifier feedback. Use Value: 14 A continuous rating and 56 A pulsed current support enable safe 100 ms inrush surge handling per MIL-STD-704F. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR024ZPBF | RDS(on) = 0.055 Ω @ 10 V (lower), Qg = 32 nC (higher), same DPAK package | Better conduction efficiency but slower switching; suited for lower-frequency, higher-current loads | Select IRFR024TRLPBF when gate drive power budget is constrained or switching frequency exceeds 300 kHz. |
| SiHFU024-GE3 | Same silicon die, IPAK (TO-251) through-hole package, RthJA = 62 °C/W (higher thermal resistance) | Preferred for prototyping or low-volume through-hole assembly; not suitable for high-density SMT layouts | Choose IRFR024TRLPBF for automated SMT production and improved thermal performance on standard PCBs. |
Compared with IRLR024ZPBF, IRFR024TRLPBF trades 45 % higher RDS(on) for 22 % lower gate charge-favoring high-frequency efficiency and compact gate driver design. Against SiHFU024-GE3, it delivers 24 % better PCB-mount thermal resistance, enabling higher sustained power in space-constrained industrial modules.
Availability
IRFR024TRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and hot-swap power management requiring stable component supply across extended product lifecycles.
Supply support for IRFR024TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR024TRLPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for optimal balance of low on-resistance, fast switching, and rugged avalanche performance in surface-mount power conversion.
FAQ
What is the maximum continuous drain current for IRFR024TRLPBF at 100 °C case temperature?
The IRFR024TRLPBF supports 9.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package when mounted on standard PCBs without additional heatsinking. Designers must verify junction temperature using RthJC = 3.0 °C/W and actual power dissipation to ensure operation remains within the -55 to +150 °C junction temperature range.
Does IRFR024TRLPBF have a logic-level gate drive requirement?
The IRFR024TRLPBF has a gate threshold voltage range of 2.0–4.0 V, making it compatible with 3.3 V and 5 V logic-level microcontrollers without external level-shifting. However, full enhancement to its rated 14 A current requires VGS = 10 V to achieve the specified 0.10 Ω RDS(on). Operating at 4.5 V yields higher on-resistance (~0.25 Ω), so IRFR024TRLPBF should be driven with ≥10 V for optimal conduction efficiency in high-current applications.
What is the avalanche energy rating of IRFR024TRLPBF and how is it tested?
The IRFR024TRLPBF is rated for 91 mJ single-pulse avalanche energy (EAS) under test conditions of VDD = 25 V, starting TJ = 25 °C, L = 541 μH, Rg = 25 Ω, and IAS = 14 A. This rating confirms ruggedness against inductive switching transients in relay drivers, solenoid controls, and motor commutation. The test follows JEDEC standard JESD24-1 and is validated per Vishay's reliability qualification program.
Can IRFR024TRLPBF be used in parallel configurations?
Yes, IRFR024TRLPBF is designed for ease of paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing across multiple devices. To ensure balanced operation, use matched gate resistors (≤5 % tolerance), symmetrical PCB layout with equal trace lengths, and common-source routing to minimize loop inductance. Parallel configurations are commonly deployed in high-current DC-DC output stages where single-device current limits are exceeded.
What is the thermal resistance from junction to ambient for IRFR024TRLPBF in standard PCB mounting?
When mounted on a 1" square FR-4 PCB (per JEDEC JESD51-3), the IRFR024TRLPBF exhibits RthJA = 50 °C/W. This value assumes no external heatsink and defines the maximum power dissipation of 2.5 W at 25 °C ambient before reaching the 150 °C maximum junction temperature. For higher power, designers should increase copper area, add thermal vias under the drain pad, or use a heatsink-compatible variant like IRFR024PbF with enhanced thermal pad exposure.
IRFR024TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 640 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR024TRLPBF FAQ
1.How can I place an order for IRFR024TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR024TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR024TRLPBF reliable?
The price and inventory of IRFR024TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR024TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR024TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR024TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR024TRLPBF?
IRFR024TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR024TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR024TRLPBF?
For technical support, including IRFR024TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR024TRLPBF requirements.
6.How does Aetrix verify that IRFR024TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR024TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR024TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR024TRLPBF?
All IRFR024TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR024TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR024TRLPBF part is unused and in its original packaging.
Return procedure for IRFR024TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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