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Vishay Siliconix IRFR110
- Part No.:
- IRFR110
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,706
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Product details
Overview
IRFR110 from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110 datasheet, IRFR110 pinout, IRFR110 application, or IRFR110 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, PCB-mount power dissipation limits, and validated alternative parts for design continuity and sourcing resilience.
Technical Context
The IRFR110 employs a third-generation trench-gated silicon process optimized for fast switching and ruggedness under unclamped inductive switching. Its dynamic dV/dt rating of 5.5 V/ns and 75 mJ single-pulse avalanche energy support reliable operation in hard-switched topologies.
Thermal performance is defined by RthJC = 5.0 °C/W (junction-to-case) and RthJA = 50 °C/W (PCB mount), enabling 2.5 W continuous dissipation on a 1" FR-4 board. The device integrates a low-Qrr (0.44–0.88 μC) body diode with trr = 100–200 ns, critical for synchronous rectification and flyback snubberless designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 24–48 V input systems with margin against transients |
| RDS(on) | 0.54 Ω @ VGS = 10 V - Enables ≤2.3 W conduction loss at 4.3 A continuous drain current |
| Qg | 8.3 nC - Supports efficient gate drive with standard 1-A drivers at ≤500 kHz switching |
| EAS | 75 mJ - Withstands unclamped inductive energy without failure in relay/motor drive snubberless circuits |
| trr | 100–200 ns - Limits reverse recovery losses in high-frequency flyback and LLC secondary-side rectification |
| PD (PCB mount) | 2.5 W @ TA = 25 °C - Defines thermal pad area requirement per Vishay's recommended 0.224" × 0.420" copper footprint |
| ID (TC = 100 °C) | 2.7 A - Specifies usable current derating for enclosed enclosures with limited heatsinking |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain tab for thermal conduction to PCB copper; 3-terminal configuration requiring minimum 0.224" × 0.420" thermal pad per Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main power output terminal / heat sink connection | Exposed metal tab electrically connected to drain; must be soldered to ≥1"² copper for rated 2.5 W dissipation |
| Gate (G) | Control input for channel modulation | High-impedance MOS gate requiring <100 nA leakage current handling; sensitive to ESD (±20 V max rating) |
| Source (S) | Power return path / reference node for gate drive | Low-inductance source connection critical for minimizing shoot-through in half-bridge layouts; internal LS = 7.5 nH |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables robust operation in inductive load switching without external clamping-4.3 A IAR, 2.5 mJ EAR per pulse |
| Dynamic dV/dt immunity | 5.5 V/ns threshold prevents false turn-on during high-slew-rate voltage transients in motor drives |
| Fast switching with low Qg | 8.3 nC total gate charge enables <25 ns combined rise/fall time at Rg = 24 Ω, reducing switching losses |
| Low RDS(on) × Qg figure of merit | 4.47 Ω·nC - Balances conduction and switching loss trade-off for medium-frequency SMPS (200–500 kHz) |
| Body diode with controlled Qrr | 0.44–0.88 μC reverse recovery charge minimizes voltage overshoot and ringing in freewheeling paths |
Applications
| DC-DC Converter Secondary Side | Industrial Motor Driver Half-Bridge |
|---|---|
Use Scenario: Synchronous rectification in isolated 48 V input, 12 V/10 A output flyback converter. IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85%. Use Value: 0.54 Ω RDS(on) cuts rectifier loss by >60% vs. 0.5 V Schottky at 10 A, directly increasing full-load efficiency. |
Use Scenario: High-side and low-side switching in 24 V brushed DC motor H-bridge for factory automation actuators. IC Role / Device Role / Timing Role: N-channel MOSFET used in both legs with bootstrap gate drive; avalanche rating handles inductive kickback during PWM commutation. Use Value: 75 mJ EAS allows safe operation without snubbers during 4.3 A motor stall events, simplifying BOM and layout. |
| LED Constant-Current Load Switch | AC-DC Adapter Primary-Side Protection |
Use Scenario: On/off control of 36 V, 1.5 A LED string in commercial lighting fixture with dimming interface. IC Role / Device Role / Timing Role: High-side load switch activated via microcontroller GPIO; requires low leakage and stable VGS(th). Use Value: 25 μA IDSS at 100 V ensures minimal standby current; 2.0–4.0 V VGS(th) range supports direct 3.3 V logic-level drive with margin. |
Use Scenario: Overcurrent protection switch in universal-input (90–264 V AC) offline SMPS primary side. IC Role / Device Role / Timing Role: Fast-turn-off power switch triggered by current-sense comparator during fault conditions. Use Value: 17 A pulsed drain current and 5.5 V/ns dV/dt immunity ensure reliable tripping under surge and short-circuit events without false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF10 | TO-220 package, higher RDS(on) = 0.6 Ω, same 100 V rating, no avalanche rating specified | Requires heatsink; unsuitable for surface-mount-only designs or avalanche-reliant circuits | Select when through-hole mounting is preferred and thermal mass compensates for higher conduction loss |
| SiHFR110 | Same die, identical specs, lead-free/halogen-free variant (GE3 suffix); pin-to-pin compatible with IRFR110 | No functional difference; qualified for RoHS-compliant manufacturing lines | Preferred for new designs requiring halogen-free compliance; drop-in replacement with identical thermal and electrical behavior |
Compared with IRFR110, STP16NF10 trades surface-mount convenience and avalanche ruggedness for lower cost in through-hole assembly, while SiHFR110 provides identical performance with updated environmental compliance-making it the optimal direct upgrade path without layout or thermal redesign.
Availability
IRFR110 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter design, and LED load switching requiring stable component supply across extended production lifecycles.
Supply support for IRFR110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR110 belongs to Vishay's third-generation surface-mount power MOSFET family, engineered for rugged fast-switching performance in space-constrained industrial and automotive auxiliary power systems.
FAQ
What is the maximum continuous drain current for IRFR110 at 100 °C case temperature?
The IRFR110 supports 2.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package when mounted on standard PCBs without additional heatsinking. Designers must verify junction temperature using RthJC = 5.0 °C/W and actual power dissipation to ensure TJ remains ≤150 °C. The IRFR110 maintains this rating across its full operating temperature range.
Does IRFR110 have a specified avalanche energy rating?
Yes, the IRFR110 is repetitively avalanche rated with 2.5 mJ per pulse (EAR) and 75 mJ single-pulse energy (EAS). These values are measured under defined test conditions: VDD = 25 V, L = 8.1 mH, Rg = 25 Ω, and IAS = 4.3 A. The IRFR110's avalanche capability enables reliable operation in inductive switching applications like motor drives without external clamping components.
What is the gate threshold voltage range for IRFR110?
The IRFR110 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, measured with VDS = VGS and ID = 250 μA. This range ensures compatibility with standard 3.3 V and 5 V logic-level gate drivers while maintaining noise immunity. The IRFR110 does not qualify as a "logic-level" MOSFET (which typically specifies VGS(th) ≤ 2.0 V), so 10 V gate drive is recommended for full RDS(on) specification.
Can IRFR110 be used in parallel configurations?
Yes, the IRFR110 is explicitly designed for ease of paralleling, as noted in its Features section. Its positive temperature coefficient of RDS(on) promotes current sharing between devices, and low gate charge (8.3 nC) minimizes gate drive complexity. For stable parallel operation, matched gate resistors and symmetrical PCB layout are required. The IRFR110's thermal resistance profile supports balanced junction temperatures when mounted on shared copper areas.
What is the recommended PCB pad layout for IRFR110 in DPAK package?
Vishay Application Note 826 specifies a minimum thermal pad of 0.224" × 0.420" (5.69 mm × 10.67 mm) for the IRFR110's DPAK package on FR-4 PCBs. This footprint ensures adequate copper area for 2.5 W power dissipation at TA = 25 °C. The IRFR110's exposed drain tab must be fully soldered to this pad; thermal vias beneath the pad are recommended to enhance heat transfer to inner layers or backside copper.
IRFR110 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR110 FAQ
1.How can I place an order for IRFR110 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110 reliable?
The price and inventory of IRFR110 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110 is usually 5 days.
3.What payment methods are accepted for IRFR110?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110?
IRFR110 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110?
For technical support, including IRFR110 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110 requirements.
6.How does Aetrix verify that IRFR110 is sourced from the original manufacturer or authorized distributors?
All IRFR110 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110 meets industry standards.
7.What is the process for return or replacement of IRFR110?
All IRFR110 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110 part is unused and in its original packaging.
Return procedure for IRFR110:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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