Vishay Siliconix IRFR110PBF
- Part No.:
- IRFR110PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110PBF.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:3,222
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Product details
Overview
IRFR110PBF from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110PBF datasheet, IRFR110PBF pinout, IRFR110PBF application, or IRFR110PBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery performance (trr = 100–200 ns), PCB-mount power dissipation (2.5 W), and validated alternative options for high-reliability discrete switching designs.
Technical Context
This third-generation TrenchFET® MOSFET uses planar silicon technology optimized for fast switching and ruggedness under unclamped inductive switching. Its 5.0 °C/W junction-to-case thermal resistance enables efficient heat transfer to PCB copper when mounted on 1" FR-4.
The device supports dynamic dV/dt of 5.5 V/ns and integrates a robust body diode with 2.5 V forward drop at 4.3 A and 0.44–0.88 μC reverse recovery charge-critical for synchronous rectification and flyback snubberless topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports input rails up to 80 V DC with margin for voltage transients in offline and automotive auxiliary supplies. |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Enables <1.2 W conduction loss at 4.3 A continuous drain current in compact SMT layouts. |
| Qg | 8.3 nC - Determines gate drive energy requirement; compatible with low-power PWM controllers like UC384x series. |
| ID (TC = 25 °C) | 4.3 A - Maximum continuous current achievable with heatsinked case mounting; derates linearly to 2.7 A at 100 °C case temperature. |
| EAS | 75 mJ - Single-pulse avalanche energy rating allows safe operation during inductive turn-off without external clamping in relay drivers. |
| trr | 100–200 ns - Body diode recovery time directly impacts switching losses and EMI in hard-switched buck or flyback converters. |
| RthJA (PCB mount) | 50 °C/W - Thermal resistance when soldered to 1"² FR-4 PCB; sets maximum ambient temperature for 2.5 W dissipation at TJ ≤ 150 °C. |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline per JEDEC MO-236.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; ±20 V absolute max rating prevents oxide damage. |
| Pin 2 (D) | Drain | Main power output terminal; electrically and thermally connected to exposed backside metal pad-must be routed to ground plane or heatsink. |
| Pin 3 (S) | Source | Reference node for gate drive; connects to power return path; body diode anode is internally tied to source. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under repeated inductive turn-off stress (IAR = 4.3 A, EAR = 2.5 mJ) without derating lifetime. |
| Dynamic dV/dt rating | 5.5 V/ns immunity prevents spurious turn-on during high-speed switching in noisy industrial environments. |
| Fast switching | Turn-on delay 6.9 ns + rise time 16 ns enables >500 kHz operation in SMPS with minimal overlap loss. |
| Surface-mount (DPAK) | Compatible with vapor-phase and IR reflow; recommended pad layout per AN826 ensures thermal reliability and solder joint integrity. |
| Low Qgd/Qg ratio | 3.8/8.3 ≈ 46% - Reduces Miller effect, improving controllability during hard switching and reducing gate drive complexity. |
Applications
| DC-DC Converter High-Side Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: 24 V input step-down converter delivering 5 V/3 A to embedded control logic. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300 kHz with 50% duty cycle. Use Value: 0.54 Ω RDS(on) limits conduction loss to <0.7 W; 8.3 nC Qg permits use of integrated gate driver without external buffer. |
Use Scenario: H-bridge driver for 12 V, 2 A brushed motor in HVAC actuator. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body diode freewheeling. Use Value: 2.5 V VSD and 100–200 ns trr minimize freewheeling loss and reduce voltage spikes during direction reversal. |
| Industrial Load Switch | AC/DC Auxiliary Supply |
Use Scenario: Remote-controlled 24 V power distribution for PLC I/O modules. IC Role / Device Role / Timing Role: Hot-swap protection switch with soft-start and overcurrent limiting via external sense resistor. Use Value: Repetitive avalanche rating (EAR = 2.5 mJ) absorbs inrush energy during capacitive load turn-on without failure. |
Use Scenario: 85–265 V AC input auxiliary supply powering microcontroller and sensors in smart meter. IC Role / Device Role / Timing Role: Primary-side switch in flyback topology operating at 65 kHz with discontinuous conduction mode. Use Value: 75 mJ single-pulse avalanche energy eliminates need for external RCD clamp, simplifying BOM and layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR120NTRPBF | Higher VDS (200 V), higher RDS(on) (0.77 Ω), same DPAK package and pinout. | Better suited for 100–160 V DC bus applications; trade-off is 43% higher conduction loss at 4.3 A. | Select when system input voltage exceeds 100 V but board space and gate drive remain constrained. |
| SiHFR110-GE3 | Identical electrical specs and DPAK footprint; halogen-free, lead-free, and manufactured at alternate Vishay facility (GE3 suffix). | No functional or layout impact; differs only in material compliance and traceability documentation. | Preferred for RoHS-compliant production requiring halogen-free certification per IEC 61249-2-21. |
Compared with IRFR110PBF, IRFR120NTRPBF trades lower on-resistance for higher breakdown voltage-making it less efficient at 24–48 V but safer at 100+ V inputs-while SiHFR110-GE3 offers identical performance with enhanced environmental compliance for regulated markets.
Availability
IRFR110PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and load switching applications requiring stable component supply across multi-year production cycles.
Supply support for IRFR110PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.
The IRFR110PBF belongs to Vishay's TrenchFET® third-generation power MOSFET family, engineered for high-reliability surface-mount switching in industrial and automotive auxiliary power systems.
FAQ
What is the maximum continuous drain current for IRFR110PBF at 100 °C case temperature?
The IRFR110PBF supports 2.7 A continuous drain current at TC = 100 °C, per its linear derating factor of 0.20 W/°C from the 25 W maximum power dissipation at 25 °C case temperature. This value assumes proper PCB copper area and thermal vias to maintain case temperature stability under load.
Does IRFR110PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFR110PBF integrates a parasitic body diode with VSD = 2.5 V at IS = 4.3 A and TJ = 25 °C, reverse recovery time trr = 100–200 ns, and reverse recovery charge Qrr = 0.44–0.88 μC. These values are measured under standardized conditions (IF = 5.6 A, dI/dt = 100 A/μs) and define freewheeling capability in inductive switching circuits.
Can IRFR110PBF be used in avalanche mode, and what are the limits?
Yes, IRFR110PBF is repetitively avalanche rated with IAR = 4.3 A and EAR = 2.5 mJ per pulse, and single-pulse avalanche energy EAS = 75 mJ. Operation must respect pulse width and duty cycle limits defined in Figure 11 and 12 of the datasheet to avoid exceeding TJ = 150 °C and ensure long-term reliability.
What is the gate threshold voltage range for IRFR110PBF, and how does it affect drive requirements?
The IRFR110PBF has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at ID = 250 μA. This means a minimum 4.5 V gate drive is recommended for reliable enhancement, while 10 V is required to achieve the specified 0.54 Ω RDS(on). Logic-level compatibility is not guaranteed-external level shifting may be needed for 3.3 V MCU interfaces.
Is IRFR110PBF compatible with standard DPAK reflow profiles, and what is the peak soldering temperature?
Yes, IRFR110PBF is qualified for standard surface-mount reflow using vapor phase, infrared, or wave soldering. The peak soldering temperature is rated at 260 °C for 10 seconds, consistent with IPC-J-STD-020 moisture sensitivity level (MSL) 1. Recommended pad layout follows Application Note AN826 to ensure thermal reliability and solder joint integrity.
IRFR110PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR110PBF FAQ
1.How can I place an order for IRFR110PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110PBF reliable?
The price and inventory of IRFR110PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110PBF is usually 5 days.
3.What payment methods are accepted for IRFR110PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110PBF?
IRFR110PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110PBF?
For technical support, including IRFR110PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110PBF requirements.
6.How does Aetrix verify that IRFR110PBF is sourced from the original manufacturer or authorized distributors?
All IRFR110PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110PBF meets industry standards.
7.What is the process for return or replacement of IRFR110PBF?
All IRFR110PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110PBF part is unused and in its original packaging.
Return procedure for IRFR110PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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