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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR110PBF-BE3

Name: IRFR110PBF-BE3
Brand: Vishay Siliconix
SKU: IRFR110PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR110PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR110PBF-BE3.pdf

Description:: MOSFET N-CH 100V 4.3A DPAK

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Product details

Overview

IRFR110PBF-BE3 from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR110PBF-BE3 datasheet, IRFR110PBF-BE3 pinout, IRFR110PBF-BE3 application, or IRFR110PBF-BE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and PCB-mount power dissipation limits critical for high-reliability switching design.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching and ruggedness. Its dynamic dV/dt rating of 5.5 V/ns and unclamped inductive switching capability (E_AS = 75 mJ) support robust operation under transient stress. The integrated body diode exhibits t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC at T_J = 25 °C, enabling efficient synchronous rectification in flyback and buck topologies.

The DPAK package enables surface-mount assembly with vapor-phase or infrared reflow, delivering up to 2.5 W power dissipation on a 1" FR-4 PCB and 25 W at case temperature (T_C = 25 °C). Thermal resistance R_thJC = 5.0 °C/W ensures effective heat transfer to external heatsinks when mounted via the exposed drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for use in 48 V bus and 100 V DC input systems
R_DS(on) @ V_GS = 10 V	0.54 Ω - conduction loss of 6.1 mW at 100 mA, 2.3 W at 2.6 A continuous current
Q_g	8.3 nC - gate drive energy requirement determines minimum driver strength and switching speed trade-off
I_D (T_C = 25 °C)	4.3 A - continuous current rating with heatsink; derates linearly to 2.7 A at T_C = 100 °C
E_AS	75 mJ - single-pulse avalanche energy supports safe operation during inductive turn-off transients
t_rr	100–200 ns - body diode reverse recovery time impacts switching losses and EMI in hard-switched converters
R_thJC	5.0 °C/W - junction-to-case thermal resistance enables accurate heatsink sizing for thermal management

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; standard 3-pin surface-mount outline compliant with JEDEC TO-252AA.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires ≤ ±20 V drive; 100 nA leakage at ±20 V ensures low standby power
Pin 2 (D)	Drain	Main power output; electrically and thermally connected to exposed copper pad; carries full load current
Pin 3 (S)	Source	Power return and reference node; ties to ground or low-side switch node; defines V_GS control path

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.3 A I_AR and 2.5 mJ E_AR without degradation-enables reliable operation in inductive load switching
Dynamic dV/dt rating	5.5 V/ns immunity prevents spurious turn-on during high-slew-rate voltage transients
Fast switching	td(on) = 6.9 ns, tr = 16 ns, td(off) = 15 ns, tf = 9.4 ns at V_DD = 50 V - reduces transition losses in high-frequency SMPS
Surface-mount (DPAK)	Compatible with automated pick-and-place and IR/vapor-phase reflow; thermal pad enables direct PCB heat sinking
Low gate charge	Q_g = 8.3 nC, Q_gd = 3.8 nC - minimizes driver power and improves Miller-effect immunity

Applications

DC-DC Converter Secondary Side	Motor Driver Half-Bridge
Use Scenario: Synchronous rectification in 12–48 V isolated DC-DC converters operating at 100–500 kHz. IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active period. Use Value: Reduces conduction loss by >40% vs. 40 V Schottky; t_rr < 200 ns avoids shoot-through risk in typical gate-drive timing margins.	Use Scenario: High-side/low-side switching in 24 V brushed DC motor drivers for industrial actuators. IC Role / Device Role / Timing Role: Low-side N-channel MOSFET in half-bridge configuration; driven by bootstrap or isolated gate driver. Use Value: 100 V V_DS withstands back-EMF spikes up to 80 V; R_DS(on) = 0.54 Ω limits I²R loss to <1.5 W at 1.7 A RMS.
Industrial Load Switch	LED Constant-Current Driver
Use Scenario: Solid-state replacement for electromechanical relays controlling 24–48 V solenoids, valves, or heaters. IC Role / Device Role / Timing Role: Single-ended load switch with integrated avalanche capability for inductive load turn-off. Use Value: 75 mJ E_AS absorbs energy from 4.3 A inductive loads without snubber; eliminates relay wear and contact bounce.	Use Scenario: Constant-current dimming stage in high-brightness LED lighting systems with 36 V input. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current up to 4.3 A. Use Value: Low R_DS(on) minimizes dropout voltage (<2.3 V at 4.3 A), preserving headroom for wide LED forward-voltage variation.

DC-DC Converter Secondary Side

Motor Driver Half-Bridge

Use Scenario: Synchronous rectification in 12–48 V isolated DC-DC converters operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diode; body diode conducts during dead-time, then channel conducts during active period.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky; t_rr < 200 ns avoids shoot-through risk in typical gate-drive timing margins.

Use Scenario: High-side/low-side switching in 24 V brushed DC motor drivers for industrial actuators.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET in half-bridge configuration; driven by bootstrap or isolated gate driver.

Use Value: 100 V V_DS withstands back-EMF spikes up to 80 V; R_DS(on) = 0.54 Ω limits I²R loss to <1.5 W at 1.7 A RMS.

Industrial Load Switch

LED Constant-Current Driver

Use Scenario: Solid-state replacement for electromechanical relays controlling 24–48 V solenoids, valves, or heaters.

IC Role / Device Role / Timing Role: Single-ended load switch with integrated avalanche capability for inductive load turn-off.

Use Value: 75 mJ E_AS absorbs energy from 4.3 A inductive loads without snubber; eliminates relay wear and contact bounce.

Use Scenario: Constant-current dimming stage in high-brightness LED lighting systems with 36 V input.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string current up to 4.3 A.

Use Value: Low R_DS(on) minimizes dropout voltage (<2.3 V at 4.3 A), preserving headroom for wide LED forward-voltage variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR110PBF	Same die, identical R_DS(on), Q_g, and avalanche ratings; differs only in lead finish (Pb-free, no halogen) and packaging code	No functional difference; compatible in all circuits where IRFR110PBF-BE3 is used	Select when halogen-free compliance is required per RoHS 2 or IPC-1752A reporting
STP12NF10	100 V, 12 A, R_DS(on) = 0.22 Ω, TO-220 package; higher current but larger footprint and no surface-mount compatibility	Requires through-hole layout change and heatsink redesign; unsuitable for space-constrained SMT designs	Choose only if higher continuous current (>4.3 A) and board-level heatsinking are available

Compared with IRFR110PBF-BE3, IRLR110PBF offers identical electrical performance in a halogen-free variant, while STP12NF10 trades SMT compatibility and thermal efficiency for higher current capacity in a through-hole package-making IRFR110PBF-BE3 optimal for compact, high-reliability surface-mount power stages.

Availability

IRFR110PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter secondary-side rectification, and solid-state load switching requiring stable component supply, long-term lifecycle support, and traceable Pb-free/halogen-free sourcing.

Supply support for IRFR110PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFR110PBF-BE3 belongs to Vishay's third-generation power MOSFET product line engineered for high-efficiency, high-reliability switching in industrial and automotive power systems-prioritizing fast switching, low R_DS(on), and robust avalanche capability.

FAQ

What is the maximum continuous drain current for IRFR110PBF-BE3 at 100 °C case temperature?

The maximum continuous drain current for IRFR110PBF-BE3 is 2.7 A when the case temperature (T_C) is 100 °C, based on linear derating from 4.3 A at 25 °C using a factor of 0.20 W/°C. This value assumes proper PCB copper area and thermal vias to maintain case temperature measurement at the drain tab per datasheet test conditions.

Does IRFR110PBF-BE3 have an integrated body diode, and what are its key recovery parameters?

Yes, IRFR110PBF-BE3 includes an integral body diode with t_rr = 100–200 ns and Q_rr = 0.44–0.88 μC at T_J = 25 °C, IF = 5.6 A, and dI/dt = 100 A/μs. V_SD = 2.5 V at I_S = 4.3 A confirms low forward drop, supporting efficient synchronous rectification without external diode addition.

What is the gate threshold voltage range for IRFR110PBF-BE3, and how does it affect drive requirements?

The gate threshold voltage (V_GS(th)) for IRFR110PBF-BE3 is specified from 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA. This range indicates standard-level logic drive compatibility; full enhancement requires ≥10 V gate drive to achieve R_DS(on) = 0.54 Ω, making it unsuitable for 3.3 V-only microcontroller direct drive without level-shifting.

Can IRFR110PBF-BE3 be used in avalanche mode, and what are the limits?

Yes, IRFR110PBF-BE3 is repetitively avalanche rated with I_AR = 4.3 A and E_AR = 2.5 mJ per pulse, and single-pulse E_AS = 75 mJ. Operation must respect pulse width and duty cycle limits defined in Figure 11 and 12 of the datasheet to avoid exceeding T_J(max) = 150 °C, and requires careful layout to minimize stray inductance.

What is the thermal resistance from junction to ambient for IRFR110PBF-BE3 in a standard PCB mount configuration?

In a standard 1" square FR-4 PCB mount, the maximum junction-to-ambient thermal resistance (R_thJA) for IRFR110PBF-BE3 is 50 °C/W. This value enables 2.5 W power dissipation at T_A = 25 °C, assuming recommended minimum pad layout per Application Note 826 and adequate copper area beneath the drain pad.

IRFR110PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 540mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR110PBF-BE3 FAQ

1.How can I place an order for IRFR110PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR110PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR110PBF-BE3 reliable?

The price and inventory of IRFR110PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR110PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR110PBF-BE3?

IRFR110PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR110PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR110PBF-BE3?

For technical support, including IRFR110PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110PBF-BE3 requirements.

6.How does Aetrix verify that IRFR110PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR110PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR110PBF-BE3?

All IRFR110PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR110PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR110PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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