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Vishay Siliconix IRFR110TR
- Part No.:
- IRFR110TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110TR.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,750
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Product details
Overview
IRFR110TR from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110TR datasheet, IRFR110TR pinout, IRFR110TR application, or IRFR110TR equivalent, this part supports fast-switching, parallel operation, and rugged unclamped inductive switching with verified dV/dt immunity up to 5.5 V/ns and 75 mJ single-pulse avalanche energy.
Technical Context
This N-channel enhancement-mode MOSFET uses third-generation trench-gate silicon technology optimized for low conduction loss and high switching efficiency. Its dynamic dV/dt rating and repetitive avalanche capability enable robust operation in inductive load circuits without external snubbers.
The device integrates a fast-recovery body diode (trr = 100–200 ns, Qrr = 0.44–0.88 μC) and exhibits linear derating of 0.20 W/°C at case temperature-supporting thermal management on standard FR-4 PCBs with 1"² copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage for use in ≤100 V bus applications |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Conduction loss of ≤5.9 W at 4.3 A continuous drain current |
| Qg | 8.3 nC - Gate drive energy requirement enabling <15 ns turn-off delay with 24 Ω gate resistor |
| ID (TC = 25 °C) | 4.3 A - Continuous current capability with heatsink or high-copper PCB mounting |
| EAS | 75 mJ - Single-pulse avalanche energy tolerance for reliable unclamped inductive switching |
| dV/dt Rating | 5.5 V/ns - Immunity to false turn-on during high-slew-rate transients in motor drives |
| RthJC | 5.0 °C/W - Junction-to-case thermal resistance enabling direct heatsink attachment via drain tab |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; dimensions per JEDEC outline (Version 1: facility code Y), including 6.35 mm × 6.73 mm body width and 9.40–10.41 mm length.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V drive; 2.3 nC gate-source charge enables logic-level compatibility with 5 V microcontrollers when used with appropriate gate driver |
| Pin 2 (D) | Drain | Main power output terminal; electrically and thermally connected to exposed copper pad-must be soldered to ≥1"² PCB copper for 2.5 W ambient-rated dissipation |
| Pin 3 (S) | Source | Power return path and reference for gate drive; internal source inductance of 7.5 nH impacts high-frequency switching stability and requires careful layout |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 4.3 A IAR and 2.5 mJ EAR without degradation-enables reliable operation in flyback and buck-boost topologies with no added clamping circuitry |
| Dynamic dV/dt rating | 5.5 V/ns immunity prevents spurious turn-on during rapid voltage transients in half-bridge and motor phase-leg configurations |
| Fast switching | 15 ns td(off) and 9.4 ns tf at VDD = 50 V reduce switching losses in 100–500 kHz SMPS designs |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering; thermal pad allows direct heatsinking on PCB without mechanical fasteners |
| Easy paralleling | Low RDS(on) tolerance and positive temperature coefficient enable stable current sharing across multiple IRFR110TR devices in high-current rails |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency synchronous buck converter operating at 300 kHz in industrial PLC power modules. IC Role / Device Role / Timing Role: Primary high-side switching element handling 4.3 A continuous current at 24 V input, switching with 15 ns off-delay and 9.4 ns fall time. Use Value: 0.54 Ω RDS(on) limits conduction loss to <6 W; 75 mJ EAS absorbs leakage inductance energy during dead-time transitions. |
Use Scenario: H-bridge driver for 24 V brushed DC motors in automated valve actuators. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed, leveraging 5.5 V/ns dV/dt immunity against commutation noise. Use Value: Repetitive avalanche rating tolerates inductive kickback during rapid direction reversal; 4.3 A ID supports peak stall currents without derating. |
| Load Switch for 12–48 V Systems | Hot-Swap Controller FET |
Use Scenario: Controlled power-up sequencing in telecom line cards with 48 V backplane supply. IC Role / Device Role / Timing Role: Single N-channel load switch isolating downstream circuitry, driven by microcontroller GPIO through discrete gate resistor. Use Value: 100 V VDS provides margin above 48 V rail; 2.0–4.0 V VGS(th) ensures clean turn-on with 3.3 V logic-level drive. |
Use Scenario: Inrush current limiting in enterprise server power distribution units. IC Role / Device Role / Timing Role: External pass FET in discrete hot-swap controller circuit, managing controlled ramp-up of 12 V/30 A loads. Use Value: 8.3 nC Qg enables precise slew-rate control using small gate resistors; body diode VSD = 2.5 V minimizes forward drop during reverse-current events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR110TRPbF | Same die, identical RDS(on), Qg, and avalanche specs-but TO-220AB package with isolated tab and higher RthJC (3.0 °C/W vs. 5.0 °C/W) | Requires mechanical mounting and insulation; unsuitable for space-constrained SMT layouts | Select when board-level heatsinking is impractical and discrete heatsink integration is preferred |
| SiHFR110TR-GE3 | Functionally identical second-source part from same Vishay fab; Pb-free/halogen-free construction, same DPAK footprint and pinout | No functional or layout differences; qualified for same automotive and industrial temperature ranges (−55 to +150 °C) | Preferred for RoHS-compliant production; fully interchangeable with IRFR110TR in existing designs |
Compared with IRFR110TR, IRLR110TRPbF trades surface-mount convenience for superior thermal performance in through-hole systems, while SiHFR110TR-GE3 offers identical electrical behavior with enhanced environmental compliance-making it the drop-in replacement for new designs requiring halogen-free materials.
Availability
IRFR110TR is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and programmable logic controller (PLC) power stages requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR110TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR110TR belongs to Vishay's third-generation power MOSFET family engineered for fast switching, rugged avalanche operation, and cost-effective surface-mount deployment in medium-power DC-DC and motor control systems.
FAQ
What is the maximum continuous drain current for IRFR110TR at 100 °C case temperature?
The IRFR110TR supports 2.7 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package mounted on standard PCBs; actual current capability increases with improved heatsinking or lower ambient temperatures. The IRFR110TR maintains safe operation up to 150 °C junction temperature under pulsed conditions.
Does IRFR110TR have a built-in body diode, and what are its key parameters?
Yes, the IRFR110TR integrates a monolithic body diode with typical forward voltage VSD = 2.5 V at IS = 4.3 A and TJ = 25 °C. Its reverse recovery time trr is 100–200 ns, and reverse recovery charge Qrr is 0.44–0.88 μC under standardized test conditions (IF = 5.6 A, dI/dt = 100 A/μs). These values confirm suitability for freewheeling in non-synchronous buck converters.
Can IRFR110TR be used in avalanche mode, and what are the limits?
Yes, the IRFR110TR is explicitly rated for repetitive avalanche operation: IAR = 4.3 A and EAR = 2.5 mJ per pulse, with pulse width limited by junction temperature. It also supports single-pulse avalanche energy EAS = 75 mJ. These ratings are validated per Figure 12 in the datasheet and allow safe operation in unclamped inductive switching without external protection components.
What is the gate threshold voltage range for IRFR110TR, and how does it affect drive requirements?
The IRFR110TR has a gate-source threshold voltage VGS(th) ranging from 2.0 V to 4.0 V at TJ = 25 °C. This ensures reliable turn-on with standard 5 V logic-level drivers, though full enhancement (RDS(on) = 0.54 Ω) requires VGS ≥ 10 V. The IRFR110TR's positive temperature coefficient further enhances current sharing in parallel configurations.
Is IRFR110TR compatible with lead-free reflow soldering processes?
Yes, the IRFR110TR is qualified for lead-free reflow soldering with peak temperature up to 260 °C for 10 seconds, as stated in its Absolute Maximum Ratings. Its DPAK (TO-252) package meets JEDEC standards for surface-mount assembly, and the "PbF-BE3" suffix confirms lead-free and halogen-free construction compliant with RoHS Directive 2011/65/EU.
IRFR110TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR110TR FAQ
1.How can I place an order for IRFR110TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110TR reliable?
The price and inventory of IRFR110TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TR is usually 5 days.
3.What payment methods are accepted for IRFR110TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110TR?
IRFR110TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110TR?
For technical support, including IRFR110TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TR requirements.
6.How does Aetrix verify that IRFR110TR is sourced from the original manufacturer or authorized distributors?
All IRFR110TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TR meets industry standards.
7.What is the process for return or replacement of IRFR110TR?
All IRFR110TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110TR part is unused and in its original packaging.
Return procedure for IRFR110TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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