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Vishay Siliconix IRFR110TRLPBF
- Part No.:
- IRFR110TRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110TRLPBF.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,990
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Product details
Overview
IRFR110TRLPBF from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110TRLPBF datasheet, IRFR110TRLPBF pinout, IRFR110TRLPBF application, or IRFR110TRLPBF equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, PCB-mount power dissipation limits, and validated alternative options for high-reliability discrete power switching designs.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon process and DPAK packaging to achieve fast switching (tr = 16 ns, tf = 9.4 ns), low gate charge (Qg = 8.3 nC), and ruggedized operation with 75 mJ single-pulse avalanche energy. Its dynamic dV/dt rating of 5.5 V/ns supports stable commutation in inductive loads.
The device integrates a robust intrinsic body diode (VSD = 2.5 V at IS = 4.3 A, trr = 100–200 ns) and supports linear-mode operation up to TJ = 150 °C. Thermal resistance is 5.0 °C/W junction-to-case and 50 °C/W junction-to-ambient on 1" FR-4 PCB-enabling compact, thermally constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 24/48 V bus applications with 20 % margin |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Enables <1.2 W conduction loss at 4.3 A continuous drain current |
| Qg | 8.3 nC - Low gate drive energy supports efficient 100–500 kHz PWM operation |
| ID @ TC = 100 °C | 2.7 A - Derated current limit for sustained operation on heatsinked PCBs |
| EAS | 75 mJ - Withstands unclamped inductive energy without failure in flyback or solenoid drivers |
| trr | 100–200 ns - Fast body diode recovery reduces switching losses and EMI in synchronous rectification |
| RthJC | 5.0 °C/W - Enables direct thermal coupling to copper pour or external heatsink via drain pad |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount compatible with vapor-phase, infrared, or wave soldering per JEDEC standards. Recommended minimum PCB pad dimensions: 6.18 mm × 4.57 mm (2.286 mm × 0.180") per Application Note 826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤ ±20 V drive; 2.3 nC Qgs enables fast turn-on with low driver stress |
| Pin 2 (D) | Drain | Main power output terminal; electrically and thermally connected to exposed backside metal pad |
| Pin 3 (S) | Source | Power return path and reference for gate drive; connects to ground plane or low-side switch node |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports reliable operation under transient overloads (IAR = 4.3 A, EAR = 2.5 mJ) without derating or external snubbers |
| Dynamic dV/dt immunity | 5.5 V/ns threshold prevents false turn-on during high-speed switching in noisy environments |
| Fast switching performance | Turn-on delay 6.9 ns + rise time 16 ns enables clean edge control in high-frequency SMPS |
| Low RDS(on) × Qg figure-of-merit | 4.47 Ω·nC - Balances conduction and switching losses for optimal efficiency in 100–300 kHz converters |
| PCB-mount power capability | 2.5 W max at TA = 25 °C on 1" FR-4 - Eliminates need for discrete heatsinks in space-constrained modules |
Applications
| DC-DC Converter Switch | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: High-efficiency buck converter in industrial PLC power module operating at 200 kHz with 48 V input and 5–12 V output. IC Role / Device Role / Timing Role: Primary high-side switching element handling peak currents up to 4.3 A with minimal conduction loss. Use Value: 0.54 Ω RDS(on) limits I²R loss to <1 W at full load, while 8.3 nC Qg ensures low gate drive power and tight duty-cycle control. |
Use Scenario: H-bridge half-bridge leg in 24 V battery-powered robotic actuator with bidirectional 3 A motor current. IC Role / Device Role / Timing Role: Low-side switching transistor enabling PWM-controlled torque and direction reversal. Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid deceleration; 2.5 V body diode forward drop minimizes freewheeling loss. |
| Load Switch for Power Sequencing | LED Driver Current Switch |
|
Use Scenario: Controlled 12 V rail enable in medical diagnostic equipment requiring soft-start and fault current limiting. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic fuse with controlled turn-on slew rate. Use Value: Gate threshold voltage (2.0–4.0 V) allows direct microcontroller GPIO drive; 17 A pulsed current rating handles inrush safely. |
Use Scenario: Constant-current dimming switch for high-brightness LED string in architectural lighting fixture (36 V, 1.5 A). IC Role / Device Role / Timing Role: PWM-controlled current path modulator synchronized to 1–10 kHz dimming signal. Use Value: Fast 9.4 ns fall time ensures precise duty-cycle fidelity; low Qgd/Qg ratio (3.8/8.3) suppresses Miller-induced oscillation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay SiHFR110TRL-GE3 | Same die, halogen-free, RoHS-compliant; identical RDS(on), Qg, and avalanche ratings | No functional difference; preferred for new designs requiring halogen-free compliance | Select SiHFR110TRL-GE3 when halogen-free material declaration is required by OEM or regional regulation. |
| ON Semiconductor NTMFS4C09NT1G | 100 V, 5.2 A, RDS(on) = 0.48 Ω @ 10 V, Qg = 10.5 nC, SO-8FL package | Higher current rating but larger gate charge; requires different footprint and layout | Choose NTMFS4C09NT1G only if higher continuous current (>4.3 A) or lower RDS(on) is critical and board space permits SO-8FL rework. |
Compared with IRFR110TRLPBF, SiHFR110TRL-GE3 offers identical electrical and thermal performance with enhanced environmental compliance, while NTMFS4C09NT1G trades slightly higher gate drive demand for improved conduction efficiency and higher current headroom-but mandates PCB redesign due to SO-8FL packaging.
Availability
IRFR110TRLPBF is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing locations.
Supply support for IRFR110TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.
The IRFR110TRLPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered specifically for surface-mount power switching where ruggedness, fast switching, and thermal efficiency are critical in space-constrained systems.
FAQ
What is the maximum continuous drain current for IRFR110TRLPBF at 100 °C case temperature?
The IRFR110TRLPBF supports 2.7 A continuous drain current at TC = 100 °C, derived from its 4.3 A rating at 25 °C and linear derating factor of 0.20 W/°C. This value assumes proper PCB thermal design per Vishay's recommended 1" FR-4 mounting conditions and must be validated against actual board layout and ambient conditions in the final application.
Does IRFR110TRLPBF have avalanche capability, and how is it specified?
Yes, IRFR110TRLPBF is repetitively avalanche rated with IAR = 4.3 A and EAR = 2.5 mJ, and also supports single-pulse avalanche energy up to 75 mJ. These ratings are measured under defined test conditions (VDD = 25 V, L = 8.1 mH, Rg = 25 Ω) and require adherence to pulse width and duty cycle limits to avoid junction overheating.
What is the gate threshold voltage range for IRFR110TRLPBF, and how does it affect drive requirements?
The gate-source threshold voltage (VGS(th)) for IRFR110TRLPBF is specified from 2.0 V to 4.0 V at ID = 250 μA. This range confirms compatibility with standard 5 V logic-level microcontrollers, though full enhancement (RDS(on) ≤ 0.54 Ω) requires VGS ≥ 10 V. The device is not a logic-level MOSFET optimized for 3.3 V drive.
Can IRFR110TRLPBF be used in linear (saturation) mode, and what limits apply?
IRFR110TRLPBF can operate in linear mode, but safe operation is bounded by its maximum junction temperature of 150 °C and SOA curve (Fig. 7). At VDS = 20 V and ID = 2 A, power dissipation reaches 40 W-exceeding its 25 W TC = 25 °C limit-so active heatsinking or strict duty-cycle control is mandatory. Linear use must follow Vishay's SOA derating guidelines.
What is the body diode reverse recovery time (trr) for IRFR110TRLPBF, and why does it matter?
The body diode reverse recovery time for IRFR110TRLPBF is 100–200 ns at TJ = 25 °C, IF = 5.6 A, and dI/dt = 100 A/μs. This parameter directly impacts switching losses and EMI in synchronous rectifier or freewheeling configurations; faster trr reduces tail current and improves efficiency in high-frequency topologies like LLC resonant converters.
IRFR110TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR110TRLPBF FAQ
1.How can I place an order for IRFR110TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110TRLPBF reliable?
The price and inventory of IRFR110TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFR110TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110TRLPBF?
IRFR110TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110TRLPBF?
For technical support, including IRFR110TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TRLPBF requirements.
6.How does Aetrix verify that IRFR110TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFR110TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFR110TRLPBF?
All IRFR110TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110TRLPBF part is unused and in its original packaging.
Return procedure for IRFR110TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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