Vishay Siliconix IRFR110TRLPBF-BE3
- Part No.:
- IRFR110TRLPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110TRLPBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,985
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Product details
Overview
IRFR110TRLPBF-BE3 from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110TRLPBF-BE3 datasheet, IRFR110TRLPBF-BE3 pinout, IRFR110TRLPBF-BE3 application, or IRFR110TRLPBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery performance (trr = 100–200 ns), PCB-mount power dissipation (2.5 W), and real-world switching timing (td(on) = 6.9 ns, tf = 9.4 ns).
Technical Context
This third-generation TrenchFET® MOSFET uses planar silicon process to achieve low conduction loss and fast switching with controlled dV/dt (5.5 V/ns peak diode recovery). Its ruggedized design supports unclamped inductive switching with 75 mJ single-pulse avalanche energy and 2.5 mJ repetitive avalanche energy.
The device operates across -55 °C to +150 °C junction temperature, features ±20 V gate-source voltage rating, and integrates a low-VSD (2.5 V max) intrinsic body diode optimized for synchronous rectification and freewheeling in buck topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Supports 48 V input bus designs with 2× safety margin against transients |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Enables <1.5 W conduction loss at 2.6 A continuous drain current |
| Qg | 8.3 nC - Determines gate drive power requirement and switching speed in hard-switched converters |
| ID @ TC = 25 °C | 4.3 A - Maximum continuous current with heatsink; derates linearly to 2.7 A at 100 °C case |
| EAS | 75 mJ - Withstands single inductive energy spikes without failure in relay/snubberless designs |
| trr | 100–200 ns - Limits reverse recovery losses during high-frequency hard commutation |
| RthJA (PCB mount) | 50 °C/W - Defines thermal rise on 1" FR-4 board: ΔT = 125 °C at 2.5 W dissipation |
Pinout & Package
DPAK (TO-252) package with exposed drain pad for thermal conduction and mechanical stability; standard 3-pin surface-mount footprint compatible with vapor-phase and wave soldering per JEDEC MO-235.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤±20 V drive; 2.3 nC Qgs defines Miller plateau duration |
| Pin 2 (D) | Drain | Main power output terminal; electrically connected to exposed thermal pad; carries full load current |
| Pin 3 (S) | Source | Power return and gate reference node; internal source inductance (LS = 7.5 nH) affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive fault conditions without external snubbers (IAR = 4.3 A, EAR = 2.5 mJ) |
| Dynamic dV/dt rated | 5.5 V/ns minimum ensures immunity to false turn-on during high-speed voltage transients |
| Fast switching | Turn-off delay (15 ns) and fall time (9.4 ns) support >500 kHz PWM in compact SMPS designs |
| Surface-mount (DPAK) | Optimized for automated assembly; thermal pad enables 2.5 W dissipation on standard FR-4 PCB |
| Low Qgd/Qg ratio | 3.8/8.3 ≈ 46% - Reduces Miller effect, improving gate drive efficiency and noise immunity |
Applications
| DC-DC Buck Converter | Industrial Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V step-down converter in programmable logic controller (PLC) power module. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300 kHz with gate drive sourced from integrated controller. Use Value: 0.54 Ω RDS(on) minimizes conduction loss; 8.3 nC Qg enables low-drive-power operation with minimal gate driver IC loading. |
Use Scenario: Low-voltage BLDC motor phase leg in HVAC fan control with 24 V supply. IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter, driven by isolated gate driver with 24 ns propagation delay. Use Value: 100–200 ns body diode trr reduces shoot-through risk and switching loss during commutation; 4.3 A ID supports 1.5 A RMS motor phase current. |
| LED Constant-Current Driver | Load Switch for Embedded System |
Use Scenario: Dimmable LED string driver in commercial lighting fixture with PWM dimming at 1 kHz. IC Role / Device Role / Timing Role: High-side current-regulating switch modulated via microcontroller GPIO with RC gate network. Use Value: Repetitive avalanche rating (EAR = 2.5 mJ) absorbs inductive kickback from LED choke during rapid PWM transitions. |
Use Scenario: Power sequencing switch enabling 3.3 V rail to FPGA I/O bank after core voltage stabilization. IC Role / Device Role / Timing Role: Controlled hot-swap FET with soft-start gate resistor limiting inrush di/dt to <1 A/μs. Use Value: 0.54 Ω RDS(on) limits voltage drop to <20 mV at 35 mA load; 2.5 W PCB-mount rating ensures reliability without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR110TRPBF | Same VDS (100 V), lower RDS(on) (0.39 Ω), higher Qg (11.5 nC), same DPAK package | Better conduction efficiency but slower switching; suited for <200 kHz applications where loss balance favors RDS(on) | Select when thermal budget is constrained and switching frequency is ≤150 kHz |
| SiHF110-GE3 | Identical RDS(on) (0.54 Ω), same Qg (8.3 nC), identical avalanche ratings, same DPAK footprint | Drop-in replacement with identical electrical and thermal behavior; differs only in halogen-free material compliance | Choose for RoHS+halogen-free compliance requirements without circuit redesign |
Compared with IRFR110TRLPBF-BE3, IRLR110TRPBF trades higher gate charge for lower on-resistance-favoring low-frequency, high-current use cases-while SiHF110-GE3 matches all key parameters exactly but adds halogen-free certification, making it a direct compliance-driven alternative.
Availability
IRFR110TRLPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drivers, DC-DC converters, and embedded load switching requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR110TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFR110TRLPBF-BE3 belongs to Vishay's TrenchFET® Generation III power MOSFET family, engineered for high-efficiency, high-ruggedness switching in space-constrained surface-mount power systems.
FAQ
What is the maximum continuous drain current for IRFR110TRLPBF-BE3 at 100 °C case temperature?
The IRFR110TRLPBF-BE3 supports 2.7 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This value reflects linear derating from 4.3 A at 25 °C using a factor of 0.20 W/°C, and assumes proper PCB copper area for thermal conduction. Exceeding this current risks exceeding the 150 °C maximum junction temperature.
Does IRFR110TRLPBF-BE3 have a specified body diode reverse recovery charge (Qrr)?
Yes, the IRFR110TRLPBF-BE3 specifies Qrr = 0.44–0.88 μC under test conditions of TJ = 25 °C, IF = 5.6 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss in synchronous rectifier and freewheeling applications and is measured with the integral body diode-not an external component.
Is IRFR110TRLPBF-BE3 suitable for avalanche operation in unclamped inductive switching?
Yes, the IRFR110TRLPBF-BE3 is explicitly rated for repetitive avalanche operation with IAR = 4.3 A and EAR = 2.5 mJ, and single-pulse avalanche energy of 75 mJ. These values are validated per Figure 12 and note "a" in the datasheet, confirming robustness in relay driving, solenoid control, and snubberless flyback designs.
What is the thermal resistance from junction to ambient for IRFR110TRLPBF-BE3 when mounted on a 1" square FR-4 PCB?
When mounted on a 1" square FR-4 PCB (per note "e"), the IRFR110TRLPBF-BE3 has RthJA = 50 °C/W. This value enables calculation of junction temperature rise: for example, at 2.5 W dissipation, ΔT = 125 °C, resulting in TJ = 150 °C at 25 °C ambient-matching its maximum rated junction temperature.
What does the "-BE3" suffix indicate in IRFR110TRLPBF-BE3?
The "-BE3" suffix in IRFR110TRLPBF-BE3 denotes an alternate manufacturing location and confirms lead (Pb)-free and halogen-free compliance per Vishay's material categorization standard (document 99912). It does not alter electrical specifications, package dimensions, or reliability performance versus non-BE3 variants like IRFR110TRLPbF.
IRFR110TRLPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR110TRLPBF-BE3 FAQ
1.How can I place an order for IRFR110TRLPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110TRLPBF-BE3 reliable?
The price and inventory of IRFR110TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TRLPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR110TRLPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TRLPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110TRLPBF-BE3?
IRFR110TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110TRLPBF-BE3?
For technical support, including IRFR110TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TRLPBF-BE3 requirements.
6.How does Aetrix verify that IRFR110TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR110TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TRLPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR110TRLPBF-BE3?
All IRFR110TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TRLPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110TRLPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR110TRLPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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