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Vishay Siliconix IRFR110TRPBF-BE3
- Part No.:
- IRFR110TRPBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110TRPBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:1,850
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Product details
Overview
IRFR110TRPBF-BE3 from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110TRPBF-BE3 datasheet, IRFR110TRPBF-BE3 pinout, IRFR110TRPBF-BE3 application, or IRFR110TRPBF-BE3 equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and PCB-mount power dissipation limits critical for high-reliability switching design.
Technical Context
This third-generation TrenchFET® MOSFET uses silicon process optimization to achieve low on-resistance with fast switching (6.9 ns turn-on delay, 9.4 ns fall time) while maintaining ruggedness via 75 mJ single-pulse avalanche energy and 5.5 V/ns peak diode recovery dV/dt rating. Its gate threshold voltage (2.0–4.0 V) ensures stable enhancement-mode operation across temperature.
The device integrates a co-packaged body diode with 2.5 V forward drop at 4.3 A and 100–200 ns reverse recovery time, enabling synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance is specified as 5.0 °C/W junction-to-case and 50 °C/W junction-to-ambient under PCB-mount conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; defines maximum input rail compatibility in buck/boost stages. |
| RDS(on) @ VGS = 10 V | 0.54 Ω - On-state resistance directly determines conduction loss in continuous-current applications. |
| ID (TC = 25 °C) | 4.3 A - Continuous drain current rating at case temperature 25 °C; used for heatsink-limited designs. |
| Qg | 8.3 nC - Total gate charge governs driver power requirement and switching speed trade-off. |
| EAS | 75 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching robustness without external snubbers. |
| RthJC | 5.0 °C/W - Junction-to-case thermal resistance; essential for calculating die temperature rise when mounted to heatsink. |
| VSD | 2.5 V - Body diode forward voltage at 4.3 A; impacts freewheeling loss and thermal stress during dead-time conduction. |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; optimized for vapor-phase, infrared, or wave soldering on FR-4 PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≤ ±20 V drive; 2.3 nC gate-source charge defines Miller plateau timing. |
| Pin 2 (D) | Drain | Main power output terminal; electrically and thermally connected to exposed backside metal pad. |
| Pin 3 (S) | Source | Power return and reference node; forms common source for gate drive loop; connects to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 4.3 A repetitive avalanche current and 2.5 mJ energy-enables reliable operation in inductive load switching without external protection. |
| Dynamic dV/dt rating | 5.5 V/ns peak diode recovery dV/dt tolerance-reduces risk of false turn-on during high-speed commutation. |
| Fast switching performance | 6.9 ns turn-on delay + 9.4 ns fall time at VDD = 50 V, Rg = 24 Ω-minimizes transition losses in 100–500 kHz SMPS designs. |
| PCB-mount power capability | 2.5 W max power dissipation on 1" square FR-4 board-enables compact layout without dedicated heatsink in low-power systems. |
| Low gate charge | 8.3 nC total gate charge with 3.8 nC gate-drain (Miller) component-reduces driver IC loading and improves efficiency at high frequency. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12 V to 5 V step-down conversion in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch controlling inductor current flow during PWM on-time. Use Value: 0.54 Ω RDS(on) minimizes conduction loss at 3 A load; 2.5 V body diode drop supports efficient freewheeling during off-time. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 2 A brushed motors in automated valve actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with fast turn-off (9.4 ns fall time). Use Value: Repetitive avalanche rating absorbs inductive kickback during direction reversal; 75 mJ EAS eliminates need for external clamping diodes. |
| AC-DC Auxiliary Supply | Hot-Swap Load Switch |
Use Scenario: 100 V input flyback auxiliary supply powering control circuitry in telecom rectifiers. IC Role / Device Role / Timing Role: Primary-side switch operating at 65 kHz with 100 V blocking requirement. Use Value: 100 V VDS rating accommodates reflected flyback voltage plus margin; 5.5 V/ns dV/dt immunity prevents spurious turn-on from transformer leakage spikes. |
Use Scenario: Inrush-limited 48 V backplane load switching in network equipment chassis. IC Role / Device Role / Timing Role: Main pass element controlled by external gate driver for soft-start and overcurrent protection. Use Value: 4.3 A continuous current and 17 A pulsed rating support surge handling; low Qg enables precise gate voltage slew rate control during ramp-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR110PbF-BE3 | Same silicon die and DPAK package; differs only in tape-and-reel packaging format (no cut tape or bulk option). | Identical electrical and thermal performance; selected when full reel procurement is required for SMT line efficiency. | Choose IRFR110PbF-BE3 for automated placement where reel quantity matches production batch size. |
| SiHFR110TR-GE3 | Functionally identical specifications but manufactured at different Vishay facility (GE3 vs BE3); same 100 V/4.3 A/0.54 Ω rating and DPAK footprint. | No functional difference in circuit operation; GE3 variant has halogen-free plating per Vishay's material categorization standard. | Select SiHFR110TR-GE3 when RoHS-compliant halogen-free finish is mandated by end-equipment environmental policy. |
Compared with IRFR110TRPBF-BE3, IRFR110PbF-BE3 offers identical performance in a different packaging configuration, while SiHFR110TR-GE3 provides equivalent electrical behavior with halogen-free construction-both require no schematic or layout changes but differ in sourcing and compliance documentation.
Availability
IRFR110TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable manufacturing origin.
Supply support for IRFR110TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management components.
The IRFR110TRPBF-BE3 belongs to Vishay's TrenchFET® third-generation power MOSFET family, engineered for high-efficiency, rugged switching in space-constrained industrial and automotive auxiliary power applications.
FAQ
What is the maximum continuous drain current for IRFR110TRPBF-BE3 at 100 °C case temperature?
The IRFR110TRPBF-BE3 supports 2.7 A continuous drain current at TC = 100 °C, reflecting linear derating from 4.3 A at 25 °C using a factor of 0.20 W/°C. This value must be validated against actual PCB thermal design, including copper area and airflow, before final system qualification.
Does IRFR110TRPBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRFR110TRPBF-BE3 integrates a monolithic body diode with 2.5 V forward voltage at 4.3 A and 100–200 ns reverse recovery time (trr) at TJ = 25 °C. Its Qrr is 0.44–0.88 μC, directly influencing switching loss and EMI in hard-commutated circuits.
What is the gate threshold voltage range for IRFR110TRPBF-BE3, and how does it affect drive requirements?
The IRFR110TRPBF-BE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise coupling below 2.0 V.
Can IRFR110TRPBF-BE3 be used in avalanche mode, and what are the safe operating limits?
Yes, IRFR110TRPBF-BE3 is repetitively avalanche rated: 4.3 A IAR and 2.5 mJ EAR per pulse, with single-pulse capability up to 75 mJ. Safe operation requires limiting pulse width per Fig. 11 and ensuring junction temperature remains ≤ 150 °C during each event.
What is the thermal resistance from junction to ambient for IRFR110TRPBF-BE3 in standard PCB mounting?
When mounted on a 1" square FR-4 PCB, the IRFR110TRPBF-BE3 exhibits RthJA = 50 °C/W. This value assumes no additional heatsinking and defines the temperature rise above ambient for a given power dissipation-e.g., 1.25 W yields ~62.5 °C rise.
IRFR110TRPBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
IRFR110TRPBF-BE3 FAQ
1.How can I place an order for IRFR110TRPBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110TRPBF-BE3 reliable?
The price and inventory of IRFR110TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TRPBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFR110TRPBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TRPBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110TRPBF-BE3?
IRFR110TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110TRPBF-BE3?
For technical support, including IRFR110TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TRPBF-BE3 requirements.
6.How does Aetrix verify that IRFR110TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFR110TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TRPBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFR110TRPBF-BE3?
All IRFR110TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TRPBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110TRPBF-BE3 part is unused and in its original packaging.
Return procedure for IRFR110TRPBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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