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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR110TRR

Name: IRFR110TRR
Brand: Vishay Siliconix
SKU: IRFR110TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR110TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR110TRR.pdf

Description:: MOSFET N-CH 100V 4.3A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR110TRR from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR110TRR datasheet, IRFR110TRR pinout, IRFR110TRR application, or IRFR110TRR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (t_rr = 100–200 ns), PCB-mount power dissipation (2.5 W), and validated alternatives for high-reliability discrete power switching.

Technical Context

This third-generation TrenchFET® MOSFET uses planar silicon process to achieve low on-resistance with rugged unclamped inductive switching capability (E_AS = 75 mJ). Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive while maintaining noise immunity.

Thermal design relies on junction-to-case resistance of 5.0 °C/W and junction-to-ambient (PCB mount) of 50 °C/W-enabling stable operation up to 150 °C junction temperature when mounted on 1" FR-4 PCB. The integrated body diode exhibits 2.5 V forward drop at 4.3 A and controlled dV/dt recovery (5.5 V/ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on)	0.54 Ω @ V_GS = 10 V - enables ≤2.3 W conduction loss at 4.3 A continuous current
Q_g	8.3 nC - determines gate driver power requirement and switching speed in hard-switched topologies
I_D (T_C = 100 °C)	2.7 A - defines maximum continuous current under thermally constrained PCB mounting
E_AS	75 mJ - quantifies single-pulse energy handling during inductive turn-off without external snubber
t_rr	100–200 ns - impacts reverse recovery losses and EMI in synchronous rectification or half-bridge configurations
R_thJC	5.0 °C/W - confirms efficient heat transfer to heatsink or copper pour via drain pad

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount compatible with vapor phase, infrared, or wave soldering per JEDEC MO-238.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires ≤±20 V drive; 2.3 nC gate-source charge defines Miller plateau timing
Pin 2 (D)	Drain	Main high-side power terminal; electrically and thermally connected to exposed backside metal pad
Pin 3 (S)	Source	Power return path and gate reference; internal source inductance (7.5 nH) affects high-speed switching ringing

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 4.3 A I_AR and 2.5 mJ E_AR without degradation-enables robust operation in inductive load switching
Dynamic dV/dt rating	5.5 V/ns minimum-reduces risk of false turn-on in high-noise motor drive or SMPS environments
Fast switching	td(on) = 6.9 ns, tr = 16 ns, td(off) = 15 ns, tf = 9.4 ns-minimizes transition losses at 100–500 kHz frequencies
Surface-mount (DPAK)	Compatible with automated assembly; thermal pad enables 2.5 W dissipation on 1" FR-4 PCB without heatsink
Low Q_gd/Q_g ratio	3.8/8.3 ≈ 46%-improves controllability during Miller region and reduces susceptibility to shoot-through

Applications

DC-DC Converter Secondary Side	Industrial Motor Driver Half-Bridge
Use Scenario: Synchronous rectification in 12–48 V input isolated flyback or forward converters. IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 0.54 Ω R_DS(on) cuts rectifier loss by >40% vs. 40 V Schottky at 3 A, enabling >92% efficiency at full load.	Use Scenario: High-side or low-side switching in 24 V brushed DC motor H-bridge drivers. IC Role / Device Role / Timing Role: Power stage transistor controlling direction/speed via PWM at ≤20 kHz. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation without external clamping.
AC-DC Adapter Primary-Side Clamp	Programmable Load Switch
Use Scenario: Active clamp in 65–100 W offline flyback adapters to recycle leakage energy. IC Role / Device Role / Timing Role: Clamping switch synchronized to primary MOSFET turn-off edge. Use Value: 100 V V_DS withstands reflected output voltage + leakage spike; 75 mJ E_AS handles single-event overvoltage.	Use Scenario: Hot-swap or power sequencing control for 5–24 V system rails in test equipment or PLC modules. IC Role / Device Role / Timing Role: Controlled turn-on/turn-off switch with soft-start via gate resistor network. Use Value: 4.3 A continuous current and 17 A pulsed rating support 10 A peak loads; fast turn-off (9.4 ns fall time) limits fault energy.

DC-DC Converter Secondary Side

Industrial Motor Driver Half-Bridge

Use Scenario: Synchronous rectification in 12–48 V input isolated flyback or forward converters.

IC Role / Device Role / Timing Role: Low-side switch replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 0.54 Ω R_DS(on) cuts rectifier loss by >40% vs. 40 V Schottky at 3 A, enabling >92% efficiency at full load.

Use Scenario: High-side or low-side switching in 24 V brushed DC motor H-bridge drivers.

IC Role / Device Role / Timing Role: Power stage transistor controlling direction/speed via PWM at ≤20 kHz.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation without external clamping.

AC-DC Adapter Primary-Side Clamp

Programmable Load Switch

Use Scenario: Active clamp in 65–100 W offline flyback adapters to recycle leakage energy.

IC Role / Device Role / Timing Role: Clamping switch synchronized to primary MOSFET turn-off edge.

Use Value: 100 V V_DS withstands reflected output voltage + leakage spike; 75 mJ E_AS handles single-event overvoltage.

Use Scenario: Hot-swap or power sequencing control for 5–24 V system rails in test equipment or PLC modules.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off switch with soft-start via gate resistor network.

Use Value: 4.3 A continuous current and 17 A pulsed rating support 10 A peak loads; fast turn-off (9.4 ns fall time) limits fault energy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR110TRPbF	Same die, identical R_DS(on), Q_g, and avalanche ratings; differs only in lead-free plating and tape/reel packaging code	No functional difference; fully interchangeable in layout and drive circuitry	Select when RoHS-compliant finish and standard tape/reel logistics are required
STP12NF10	Higher R_DS(on) (0.85 Ω), lower I_D (12 A @ T_C = 25 °C), no specified E_AS rating; TO-220 package	Requires heatsink for >1.5 A continuous; unsuitable for surface-mount-only designs or unclamped inductive switching	Choose only if through-hole mounting and higher voltage margin (100 V) are acceptable trade-offs for cost

Compared with IRFR110TRR, IRFL110TRPbF offers identical electrical performance in a functionally equivalent package, while STP12NF10 provides higher current rating but lacks surface-mount compatibility and avalanche ruggedness-making IRFR110TRR optimal for space-constrained, high-reliability industrial switching.

Availability

IRFR110TRR is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converter secondary-side rectification, and programmable load switching requiring stable component supply across extended production cycles.

Supply support for IRFR110TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.

The IRFR110TRR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency, surface-mount power conversion in industrial, computing, and telecom infrastructure where thermal performance and avalanche tolerance are critical.

FAQ

What is the maximum continuous drain current for IRFR110TRR at 100 °C case temperature?

The IRFR110TRR supports 2.7 A continuous drain current at T_C = 100 °C, as defined by its linear derating factor of 0.20 W/°C from the 25 W maximum power dissipation at T_C = 25 °C. This value assumes proper PCB thermal management using a 1" square FR-4 copper area per Vishay's recommended layout.

Does IRFR110TRR have an integrated body diode, and what are its key parameters?

Yes, IRFR110TRR includes an integral body diode rated for 4.3 A continuous source-drain current. Key parameters include V_SD = 2.5 V at 4.3 A and T_J = 25 °C, reverse recovery time t_rr = 100–200 ns, and reverse recovery charge Q_rr = 0.44–0.88 μC-critical for evaluating commutation losses in synchronous rectifiers.

What is the gate threshold voltage range for IRFR110TRR, and how does it affect drive requirements?

The IRFR110TRR has a gate threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while providing noise margin against spurious triggering in noisy industrial environments.

Can IRFR110TRR be used in avalanche mode, and what are the rated conditions?

Yes, IRFR110TRR is repetitively avalanche rated with I_AR = 4.3 A and E_AR = 2.5 mJ per pulse. Single-pulse avalanche energy is rated at 75 mJ (E_AS) under conditions of V_DD = 25 V, L = 8.1 mH, R_g = 25 Ω, and starting T_J = 25 °C-validating use in inductive load switching without external protection.

What PCB layout considerations are recommended for optimal thermal performance of IRFR110TRR?

Vishay recommends a minimum 1" square FR-4 PCB copper area for the drain pad to achieve 2.5 W power dissipation. Application Note 826 specifies pad dimensions: 0.224" × 0.243" (5.69 mm × 6.18 mm) for the central thermal pad, with 0.055" (1.397 mm) clearance to adjacent traces to minimize thermal coupling and ensure consistent solder reflow.

IRFR110TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 540mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR110TRR FAQ

1.How can I place an order for IRFR110TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR110TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR110TRR reliable?

The price and inventory of IRFR110TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TRR is usually 5 days.

3.What payment methods are accepted for IRFR110TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR110TRR?

IRFR110TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR110TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR110TRR?

For technical support, including IRFR110TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TRR requirements.

6.How does Aetrix verify that IRFR110TRR is sourced from the original manufacturer or authorized distributors?

All IRFR110TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TRR meets industry standards.

7.What is the process for return or replacement of IRFR110TRR?

All IRFR110TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR110TRR part is unused and in its original packaging.

Return procedure for IRFR110TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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