My Inquiry
My Account
Vishay Siliconix IRFR110TRRPBF
- Part No.:
- IRFR110TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR110TRRPBF.pdf
- Description:
- MOSFET N-CH 100V 4.3A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,070
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFR110TRRPBF from Vishay Siliconix is a 100 V, 4.3 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.54 Ω RDS(on) at VGS = 10 V, 8.3 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR110TRRPBF datasheet, IRFR110TRRPBF pinout, IRFR110TRRPBF application, or IRFR110TRRPBF equivalent, this part supports fast-switching, parallel operation, and rugged unclamped inductive switching-key considerations for high-reliability 100 V power stage design with PCB-mount thermal constraints.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon die and DPAK packaging to deliver low conduction loss and controlled dynamic behavior. Its 5.5 V/ns peak diode recovery dV/dt rating and 100 ns body diode reverse recovery time enable stable operation in hard-switched topologies.
The device is rated for 75 mJ single-pulse avalanche energy and 2.5 mJ repetitive avalanche energy under defined conditions, with thermal resistance RthJC = 5.0 °C/W enabling efficient heat transfer to the PCB copper pour or heatsink via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for use in 48 V bus and 100 V input power stages |
| RDS(on) @ VGS = 10 V | 0.54 Ω - Conduction loss of ≤2.3 W at 4.3 A continuous drain current (TC = 25 °C) |
| Qg | 8.3 nC - Gate drive energy requirement compatible with standard 12 V gate drivers and low-power controllers |
| ID (continuous, TC = 25 °C) | 4.3 A - Sustained current capability with 25 W package power dissipation limit |
| EAS | 75 mJ - Single-pulse unclamped inductive switching margin for flyback and buck-boost designs |
| RthJC | 5.0 °C/W - Thermal path efficiency from junction to case enables direct heatsink mounting or large PCB copper area |
| Body diode VSD | 2.5 V - Forward voltage drop impacts synchronous rectifier losses and freewheeling efficiency |
Pinout & Package
DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; surface-mount compatible with vapor phase, infrared, or wave soldering. Recommended minimum PCB pad dimensions: 6.18 mm × 4.57 mm for drain, 2.20 mm × 0.89 mm for source and gate terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≤±20 V gate-source voltage; 2.3 nC gate-source charge defines Miller plateau timing |
| Pin 2 (D) | Drain | Main high-side switching node; electrically and thermally connected to exposed metal pad on underside of package |
| Pin 3 (S) | Source | Power return reference; ties to ground or low-side switch node; 3.8 nC gate-drain charge affects turn-off dv/dt sensitivity |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 5.5 V/ns - Enables reliable operation during fast voltage transients without spurious turn-on |
| Repetitive avalanche rated | 4.3 A IAR, 2.5 mJ EAR - Supports robustness in inductive load switching without external snubbers |
| Fast switching | 6.9 ns td(on), 9.4 ns tf - Reduces switching losses in 100–500 kHz power converters |
| Ease of paralleling | Positive temperature coefficient of RDS(on) - Ensures current sharing stability across multiple devices |
| Surface-mount (DPAK) | TO-252 footprint - Compatible with automated assembly and offers superior thermal performance vs. SO-8 |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V to 12 V/5 V in industrial control modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 250 kHz with forced PWM commutation. Use Value: 0.54 Ω RDS(on) limits conduction loss to <1.2 W at 5 A load; 8.3 nC Qg ensures clean 12 V gate drive compatibility. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 3 A brushed motors in automation actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch with bidirectional current handling via integrated body diode. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; 2.5 V VSD minimizes freewheeling loss. |
| AC-DC Auxiliary Supply | Hot-Swap Load Switch |
Use Scenario: Flyback auxiliary supply powering control circuitry in 100 V offline SMPS. IC Role / Device Role / Timing Role: Primary-side switch subjected to unclamped inductive energy during startup and fault conditions. Use Value: 75 mJ EAS withstands worst-case startup surge; 100 ns trr prevents cross-conduction in self-oscillating flyback. |
Use Scenario: Inrush-limited 48 V backplane load connection in telecom shelf systems. IC Role / Device Role / Timing Role: Single-N-channel high-side switch with external gate driver and current-sense resistor. Use Value: 100 V VDS headroom accommodates line transients; 4.3 A ID supports ≥3 A steady-state loads with derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR110TRPBF | Same die, but in smaller DPAK-3L (TO-252AA) variant with identical RDS(on), Qg, and avalanche ratings | Identical electrical performance; differs only in leadframe geometry and thermal pad layout | Select IRFR110TRRPBF when full DPAK-5L mechanical robustness and maximum PCB copper area for drain thermal spreading are required |
| SiHFR110TR-GE3 | Same silicon, halogen-free and lead-free per JEDEC J-STD-609; identical absolute max ratings and dynamic parameters | No functional difference; qualified for RoHS-compliant production with same thermal and switching behavior | Choose SiHFR110TR-GE3 for new designs requiring full material compliance documentation and alternate manufacturing traceability |
Compared with IRFR110TRRPBF, IRLR110TRPBF offers identical electrical specs in a slightly reduced DPAK outline, while SiHFR110TR-GE3 provides identical performance with enhanced environmental compliance-neither is pin-compatible by footprint revision, but both share identical pin assignment and thermal interface requirements.
Availability
IRFR110TRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and hot-swap load switching requiring stable component supply and long-term manufacturability.
Supply support for IRFR110TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The IRFR110TRRPBF belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for optimal balance of low RDS(on), fast switching, and rugged avalanche capability in surface-mount power stages.
FAQ
What is the maximum continuous drain current for IRFR110TRRPBF at 100 °C case temperature?
The IRFR110TRRPBF supports 2.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and ambient conditions in the final design.
Does IRFR110TRRPBF have a built-in body diode, and what are its key characteristics?
Yes, the IRFR110TRRPBF integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key specifications include 4.3 A continuous source-drain current, 2.5 V forward voltage at 4.3 A and 25 °C, and 100–200 ns reverse recovery time with 0.44–0.88 μC recovered charge-critical for evaluating freewheeling losses in buck or H-bridge topologies.
Is IRFR110TRRPBF suitable for avalanche operation, and under what conditions is it rated?
Yes, the IRFR110TRRPBF is explicitly rated for repetitive avalanche operation: 4.3 A IAR and 2.5 mJ EAR, with pulse width limited by junction temperature. Single-pulse avalanche energy is 75 mJ. These ratings assume proper gate biasing, thermal management, and adherence to test conditions defined in Figures 11–12 of the datasheet.
What is the gate threshold voltage range for IRFR110TRRPBF, and how does it affect drive requirements?
The IRFR110TRRPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This standard-level threshold requires ≥10 V gate drive for full enhancement and minimal RDS(on); logic-level drivers (e.g., 5 V) will not fully turn on the device and must be avoided unless verified for partial conduction in specific low-current applications.
How does the DPAK (TO-252) package of IRFR110TRRPBF impact thermal performance in PCB-mounted applications?
The DPAK package of IRFR110TRRPBF delivers RthJA = 50 °C/W when mounted on a 1" square FR-4 PCB-significantly better than SO-8 alternatives. The exposed drain pad must be connected to ≥250 mm² of 2-oz copper for optimal heat spreading; thermal vias beneath the pad further reduce RthJA toward the datasheet's 110 °C/W worst-case value.
IRFR110TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 25W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR110TRRPBF FAQ
1.How can I place an order for IRFR110TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR110TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR110TRRPBF reliable?
The price and inventory of IRFR110TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR110TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR110TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR110TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR110TRRPBF?
IRFR110TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR110TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR110TRRPBF?
For technical support, including IRFR110TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR110TRRPBF requirements.
6.How does Aetrix verify that IRFR110TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR110TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR110TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR110TRRPBF?
All IRFR110TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR110TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR110TRRPBF part is unused and in its original packaging.
Return procedure for IRFR110TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFR110TRRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
