Vishay Siliconix IRFR120

Overview

IRFR120 from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and repetitive avalanche rating - designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120 datasheet, IRFR120 pinout, IRFR120 application, or IRFR120 equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and direct alternatives with documented parameter differences for reliable high-current switching design.

Technical Context

The IRFR120 uses third-generation trench-gate silicon technology optimized for fast switching and ruggedness in surface-mount applications. Its dynamic dV/dt rating of 5.5 V/ns and unclamped inductive switching capability support robust operation in hard-switched topologies.

Thermal performance is defined by R_thJC = 3.0 °C/W (junction-to-case) and R_thJA = 50 °C/W (PCB mount), enabling 2.5 W dissipation on a 1" FR-4 board. The integrated body diode exhibits t_rr = 130–260 ns and Q_rr = 0.65–1.3 μC under specified conditions.

Key Specifications

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal conduction and mechanical stability. Standard footprint per Vishay Application Note 826: 6.18 mm × 10.67 mm pad layout with 2.29 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFR120, the IRLR120N offers lower on-resistance but lacks repetitive avalanche capability - making IRFR120 preferable in inductive switching; SiHFR120-GE3 is a functionally identical, environmentally compliant variant with no layout or performance trade-offs.

Availability

IRFR120 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and industrial load switching applications requiring stable component supply and long-term production continuity.

Supply support for IRFR120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFR120 belongs to Vishay's third-generation power MOSFET family engineered for rugged fast-switching performance in surface-mount power conversion and motor drive systems.

FAQ

What is the maximum continuous drain current for IRFR120 at 100 °C case temperature?

The IRFR120 supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations when mounted on standard PCBs without additional heatsinking. Engineers must verify junction temperature rise using R_thJC = 3.0 °C/W and actual power dissipation to ensure safe operation within the -55 °C to +150 °C T_J range. The IRFR120 datasheet confirms this rating applies under steady-state conditions with proper thermal management.

Does IRFR120 have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFR120 integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key recovery parameters include reverse recovery time t_rr = 130–260 ns and reverse recovery charge Q_rr = 0.65–1.3 μC, measured at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. These values enable predictable freewheeling behavior in buck and flyback topologies. The IRFR120 body diode is not optimized for ultrafast recovery but provides sufficient performance for general-purpose switching applications.

Can IRFR120 be driven directly by a 3.3 V microcontroller GPIO pin?

No, the IRFR120 is not a logic-level MOSFET and cannot be fully enhanced by 3.3 V alone. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, and R_DS(on) = 0.27 Ω is guaranteed only at V_GS = 10 V. Driving with 3.3 V results in high on-resistance and excessive heating. A gate driver or level-shifting circuit is required to deliver 10 V to the IRFR120 gate. The IRFR120 datasheet explicitly specifies test conditions at 10 V for all key on-state parameters.

What is the thermal resistance from junction to ambient for IRFR120 in a standard PCB mount configuration?

For IRFR120 mounted on a 1" square FR-4 PCB, the maximum junction-to-ambient thermal resistance R_thJA is 50 °C/W, as stated in the Thermal Resistance Ratings table. This value assumes standard copper area and no external heatsink. When used with a heatsink or high-copper thermal pad, R_thJC = 3.0 °C/W becomes the dominant path. The IRFR120 thermal performance must be validated using these values alongside actual power dissipation to avoid exceeding the 150 °C maximum junction temperature.

Is IRFR120 suitable for avalanche operation, and what are the limits?

Yes, the IRFR120 is explicitly rated for repetitive avalanche operation: I_AR = 7.7 A and E_AR = 4.2 mJ, with pulse width limited by maximum junction temperature. Single-pulse avalanche energy is rated at E_AS = 210 mJ. These ratings are validated per test conditions in Figure 12 of the datasheet (V_DD = 25 V, L = 5.3 mH, R_g = 25 Ω). The IRFR120 avalanche capability eliminates the need for external clamping components in many inductive switching applications.