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Vishay Siliconix IRFR120TR
- Part No.:
- IRFR120TR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR120TR.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:7,210
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Product details
Overview
IRFR120TR from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR120TR datasheet, IRFR120TR pinout, IRFR120TR application, or IRFR120TR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics, and direct-mount PCB thermal performance data critical for high-reliability switching design.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon structure to achieve low conduction loss while maintaining robust unclamped inductive switching capability (EAS = 210 mJ). Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers and supports stable turn-on under varying temperature conditions.
The device integrates a fast-recovery body diode (trr = 130–260 ns, Qrr = 0.65–1.3 μC) and exhibits controlled dV/dt immunity (5.5 V/ns peak diode recovery), enabling reliable operation in hard-switched topologies without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 24/48 V bus systems with 20 % margin |
| RDS(on) @ VGS = 10 V | 0.27 Ω - Enables ≤1.5 W conduction loss at 7.7 A continuous drain current |
| Qg | 16 nC - Determines gate drive power requirement and switching speed in PWM stages |
| ID @ TC = 25 °C | 7.7 A - Continuous current rating under heatsink-mounted conditions |
| EAS | 210 mJ - Supports single-pulse inductive energy handling without failure in relay/snubberless designs |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for high-power density layouts |
| trr | 130–260 ns - Body diode reverse recovery time affecting cross-conduction loss in synchronous rectification |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and PCB heat spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives gate drive signal; requires ≤±20 V bias; input capacitance Ciss = 360 pF affects driver sizing |
| D (Drain) | High-side power switch node | Connected to exposed copper pad on bottom of package; carries full load current and dissipates heat directly to PCB |
| S (Source) | Reference and return path | Common source node for gate drive reference; internal source inductance LS = 7.5 nH impacts switching waveform ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 7.7 A IAR and 4.2 mJ EAR under pulsed inductive loads without derating lifetime |
| Dynamic dV/dt rated | 5.5 V/ns peak diode recovery dV/dt tolerance prevents spurious turn-on in noisy environments |
| Fast switching | Turn-on delay 6.8 ns + rise time 27 ns enables >500 kHz operation in SMPS with minimal overlap loss |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering; recommended pad layout per AN826 for thermal reliability |
| Low Qgd/Qg ratio | 7.7/16 = 48 % - Improves Miller immunity and reduces risk of false turn-on during high dV/dt transitions |
Applications
| DC-DC Converter High-Side Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down converter in 48 V industrial power supply delivering 5–12 V to control logic. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with forced commutation. Use Value: 0.27 Ω RDS(on) limits conduction loss to <1.2 W at 7 A, while 16 nC Qg enables efficient gate driving with low-current controllers. |
Use Scenario: H-bridge half-bridge leg controlling bidirectional 24 V brushed motor in factory automation actuator. IC Role / Device Role / Timing Role: Low-side switching element handling 6 A continuous current with PWM duty cycling. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time, eliminating need for external flyback diodes. |
| LED Constant-Current Driver | Hot-Swap Controller |
Use Scenario: Constant-current LED string driver for architectural lighting with 36 V input and 2 A output. IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element regulating current through high-brightness LEDs. Use Value: 100 V VDS accommodates input transients up to 40 V; body diode forward drop (VSD = 2.5 V) enables reverse-polarity protection. |
Use Scenario: Inrush-limiting switch in 12 V backplane hot-swap module with 5 A steady-state load. IC Role / Device Role / Timing Role: Controlled turn-on power switch managing capacitive load charging via gate slew-rate control. Use Value: Low gate charge (16 nC) allows precise timing of ramp-up using RC gate networks; 3.0 °C/W RthJC sustains safe junction temperature during extended inrush. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR120PbF-BE3 | Same silicon die and DPAK package; differs only in tape-and-reel packaging (TR vs. bulk) and lead-free compliance suffix (-BE3 same) | No functional difference; suitable for identical circuit roles including DC-DC, motor drive, and load switching | Select IRFR120TR for automated SMT placement; IRFR120PbF-BE3 for manual prototyping or low-volume hand assembly |
| SiHFR120-GE3 | Identical VDS, RDS(on), Qg, and package; manufactured by Vishay under alternate part numbering with halogen-free designation | Same thermal and switching performance; qualified for RoHS-compliant and green-chemistry manufacturing lines | Choose SiHFR120-GE3 when halogen-free compliance is required per IPC-1752A or customer environmental specifications |
Compared with IRFR120TR, IRFR120PbF-BE3 offers identical electrical and thermal behavior but different packaging format, while SiHFR120-GE3 provides identical performance with certified halogen-free materials-both require no schematic or layout changes.
Availability
IRFR120TR is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED drivers requiring stable component supply across multi-year production cycles.
Supply support for IRFR120TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The IRFR120TR belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-efficiency switching in space-constrained industrial and automotive-qualified power systems.
FAQ
What is the maximum continuous drain current for IRFR120TR at 100 °C case temperature?
The IRFR120TR supports 4.9 A continuous drain current at TC = 100 °C, derived from its linear derating factor of 0.33 W/°C and 42 W PD rating at 25 °C. This value reflects real-world thermal limits when mounted on a heatsink or thermally enhanced PCB, and must be validated against actual board layout and ambient conditions in the final design.
Does IRFR120TR have a built-in body diode, and what are its key parameters?
Yes, the IRFR120TR integrates a fast-recovery body diode with 7.7 A continuous forward current (IS), 2.5 V forward voltage (VSD) at 7.7 A and 25 °C, and reverse recovery time (trr) of 130–260 ns. These values are measured under standardized conditions (TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs) and directly impact efficiency in freewheeling and synchronous rectification applications.
What is the gate threshold voltage range for IRFR120TR, and how does it affect drive compatibility?
The IRFR120TR has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers, while providing noise margin against false triggering. The typical value falls near 3.0 V, allowing partial enhancement even with lower-voltage controllers-though full RDS(on) performance requires ≥10 V VGS.
Can IRFR120TR be used in avalanche-mode operation, and what are the limits?
Yes, the IRFR120TR is explicitly rated for repetitive avalanche operation: 7.7 A IAR and 4.2 mJ EAR per pulse, with pulse width limited by junction temperature. Single-pulse avalanche energy is higher at 210 mJ. These ratings assume proper gate biasing and thermal management; operation beyond datasheet limits voids reliability guarantees and may cause parametric shift or failure.
What PCB layout recommendations apply to IRFR120TR for optimal thermal performance?
Vishay Application Note AN826 specifies minimum DPAK (TO-252) copper pads for IRFR120TR: 0.224" × 0.420" (5.69 mm × 10.67 mm) for the drain thermal pad, with ≥2 oz copper and thermal vias to inner layers. Mounting on a 1" square FR-4 PCB yields RthJA = 50 °C/W; larger copper area or external heatsinking further reduces thermal resistance and improves power handling.
IRFR120TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR120TR FAQ
1.How can I place an order for IRFR120TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR120TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR120TR reliable?
The price and inventory of IRFR120TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TR is usually 5 days.
3.What payment methods are accepted for IRFR120TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR120TR?
IRFR120TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR120TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR120TR?
For technical support, including IRFR120TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TR requirements.
6.How does Aetrix verify that IRFR120TR is sourced from the original manufacturer or authorized distributors?
All IRFR120TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TR meets industry standards.
7.What is the process for return or replacement of IRFR120TR?
All IRFR120TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR120TR part is unused and in its original packaging.
Return procedure for IRFR120TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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