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Vishay Siliconix IRFR120TRL

Part No.:
IRFR120TRL
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR120TRL.pdf
Description:
MOSFET N-CH 100V 7.7A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,829

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Product details

Overview

IRFR120TRL from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120TRL datasheet, IRFR120TRL pinout, IRFR120TRL application, or IRFR120TRL equivalent, this page delivers verified electrical specs, thermal derating behavior, diode recovery characteristics, and surface-mount layout guidance per Vishay's recommended DPAK pad dimensions.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon die geometry to achieve low conduction loss while maintaining robust unclamped inductive switching capability (EAS = 210 mJ). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic drivers.

The device integrates a fast-recovery body diode (trr = 130–260 ns, Qrr = 0.65–1.3 μC) and supports high dV/dt immunity (5.5 V/ns), enabling stable operation in hard-switched topologies without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - maximum blocking voltage for 24/48 V bus applications
RDS(on)0.27 Ω @ VGS = 10 V - enables ≤1.3 W conduction loss at 7.7 A continuous drain current
Qg16 nC - determines gate drive power requirement and switching speed in PWM circuits
ID (TC = 25 °C)7.7 A - continuous current rating under heatsink-cooled conditions
EAS210 mJ - single-pulse avalanche energy tolerance for inductive load protection
trr130–260 ns - body diode reverse recovery time affecting shoot-through risk in half-bridge designs
RthJC3.0 °C/W - junction-to-case thermal resistance enabling direct heatsink mounting

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for PCB heat spreading and low-inductance layout.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal accepting 10 V logic-level drive; input capacitance Ciss = 360 pF affects driver sizing
DDrainMain power output terminal; electrically and thermally connected to exposed copper pad on bottom of package
SSourceReference node for gate drive and current sensing; tied to PCB ground plane in most switch-mode applications

Key Features

FeatureDesign Value
Repetitive avalanche ratedSupports 7.7 A IAR and 4.2 mJ EAR without degradation-enables rugged operation in flyback and boost converters
Dynamic dV/dt rated5.5 V/ns immunity prevents false turn-on during high-speed switching transients
Fast switchingTurn-on delay 6.8 ns, rise time 27 ns, fall time 17 ns-reduces switching losses in 100–500 kHz SMPS
Surface-mount (DPAK)Compatible with vapor-phase, infrared, and wave soldering; requires Vishay-recommended 10.67 × 5.69 mm thermal pad
Low RDS(on)/Qg ratio0.27 Ω / 16 nC = 16.9 mΩ·nC-balances conduction and switching loss for medium-frequency power stages

Applications

DC-DC ConvertersMotor Control

Use Scenario: Synchronous buck converter in 48 V telecom power supply delivering 12 V/10 A output.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch operating at 250 kHz with 10 V gate drive.

Use Value: 0.27 Ω RDS(on) limits conduction loss to 2.7 W at full load; 16 nC Qg allows efficient driving with TC4427 gate driver.

Use Scenario: H-bridge driver for 24 V brushed DC motor in industrial actuator.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 7.7 A continuous.

Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; body diode trr < 260 ns minimizes cross-conduction risk.

Load SwitchingPower OR-ing

Use Scenario: Hot-swap controller for redundant 24 V power inputs in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Single-pole, single-throw electronic fuse with controlled turn-on slew rate.

Use Value: Gate threshold range (2.0–4.0 V) enables precise enable timing via microcontroller GPIO; 100 V VDS provides margin against line transients.

Use Scenario: Reverse-polarity and OR-ing diode replacement in dual-input 12 V battery backup system.

IC Role / Device Role / Timing Role: Active rectifier controlling current flow direction based on source voltage priority.

Use Value: Low 0.27 Ω RDS(on) reduces forward drop to <0.2 V at 5 A-cutting power loss by >80% vs. Schottky diode solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLR120NTRPbFSame VDS (100 V), lower RDS(on) (0.14 Ω), higher Qg (22 nC), same DPAK packageBetter conduction efficiency but demands stronger gate drive; not drop-in due to different gate charge profileSelect when minimizing conduction loss dominates over gate drive complexity
SiHFR120-GE3Identical electrical specs and DPAK footprint; differs only in halogen-free material compliance and manufacturing locationNo functional or layout impact; fully interchangeable in existing designs requiring RoHS/REACH compliancePreferred for new designs targeting green electronics certification

Compared with IRFR120TRL, IRLR120NTRPbF offers lower on-resistance at the cost of higher gate drive demand, while SiHFR120-GE3 matches all performance parameters and mechanical form factor with updated environmental compliance-making it a seamless upgrade path.

Availability

IRFR120TRL is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and battery-powered load switching applications requiring stable component supply and long-term manufacturability.

Supply support for IRFR120TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFR120TRL belongs to Vishay's TrenchFET® Generation III power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and telecom power systems where ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFR120TRL at 100 °C case temperature?

The IRFR120TRL supports 4.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the DPAK package under sustained high-temperature operation and must be validated against actual PCB layout and heatsinking in the target application.

Does IRFR120TRL have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFR120TRL integrates a monolithic body diode with typical reverse recovery time (trr) of 130–260 ns and reverse recovery charge (Qrr) of 0.65–1.3 μC at TJ = 25 °C. These values are measured under standardized conditions (IF = 9.2 A, dI/dt = 100 A/μs) and directly impact shoot-through risk in synchronous rectification and half-bridge configurations.

What is the gate-source threshold voltage range for IRFR120TRL, and how does it affect drive compatibility?

The IRFR120TRL has a gate-source threshold voltage (VGS(th)) range of 2.0–4.0 V at ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level drivers, but caution is required with 3.3 V controllers-full enhancement requires ≥10 V VGS to achieve the rated 0.27 Ω RDS(on).

Is IRFR120TRL suitable for avalanche operation, and what are the limits?

Yes, the IRFR120TRL is explicitly rated for repetitive avalanche operation with IAR = 7.7 A and EAR = 4.2 mJ per pulse. Single-pulse avalanche energy is rated at 210 mJ. Operation within these limits requires adherence to pulse width and duty cycle constraints defined in Figure 11 and 12 of the datasheet to prevent junction overheating.

What PCB pad dimensions are recommended for IRFR120TRL's DPAK (TO-252) package?

Vishay specifies a minimum thermal pad of 10.67 mm × 5.69 mm (0.420″ × 0.224″) for the IRFR120TRL DPAK footprint, per Application Note 826. This dimension ensures adequate copper area for thermal dissipation and mechanical reliability during reflow, especially when operating near maximum power limits.

IRFR120TRL Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK

IRFR120TRL FAQ

1.How can I place an order for IRFR120TRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120TRL reliable?

The price and inventory of IRFR120TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRL is usually 5 days.

3.What payment methods are accepted for IRFR120TRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120TRL?

IRFR120TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120TRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120TRL?

For technical support, including IRFR120TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRL requirements.

6.How does Aetrix verify that IRFR120TRL is sourced from the original manufacturer or authorized distributors?

All IRFR120TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRL meets industry standards.

7.What is the process for return or replacement of IRFR120TRL?

All IRFR120TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120TRL part is unused and in its original packaging.

Return procedure for IRFR120TRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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