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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR120TRLPBF-BE3

Name: IRFR120TRLPBF-BE3
Brand: Vishay Siliconix
SKU: IRFR120TRLPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120TRLPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120TRLPBF-BE3.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

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Product details

Overview

IRFR120TRLPBF-BE3 from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120TRLPBF-BE3 datasheet, IRFR120TRLPBF-BE3 pinout, IRFR120TRLPBF-BE3 application, or IRFR120TRLPBF-BE3 equivalent, this page delivers verified electrical specs, thermal derating behavior, diode recovery characteristics, and real-world mounting guidance for PCB-level thermal management and high-reliability switching design.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining robust unclamped inductive switching capability (E_AS = 210 mJ). Its gate threshold voltage (2.0–4.0 V) supports standard 10 V gate drive, and its dynamic dV/dt rating (5.5 V/ns) enables stable operation in noisy high-speed switching environments.

The device integrates a fast-recovery body diode (t_rr = 130–260 ns, Q_rr = 0.65–1.3 μC) with controlled reverse recovery behavior, reducing switching losses in synchronous rectification and flyback topologies. Thermal resistance from junction-to-case is 3.0 °C/W, enabling high-power-density designs when mounted on copper-clad FR-4 PCBs with recommended minimum pad layout per Application Note 826.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for use in 48 V input systems and 100 V bus applications.
R_DS(on) @ V_GS = 10 V	0.27 Ω - Enables ≤2.0 W conduction loss at 7.7 A continuous drain current (T_C = 25 °C).
Q_g	16 nC - Determines gate driver power requirement and switching speed in hard-switched topologies.
I_D (continuous, T_C = 25 °C)	7.7 A - Sustained current capability under heatsink-cooled conditions; derates linearly to 4.9 A at 100 °C case temperature.
E_AS	210 mJ - Energy-handling capacity during unclamped inductive switching, critical for relay/snubberless solenoid driving.
t_rr	130–260 ns - Body diode reverse recovery time affecting cross-conduction loss in half-bridge configurations.
R_thJC	3.0 °C/W - Junction-to-case thermal resistance enabling direct heatsink attachment for >40 W dissipation.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor-phase, infrared, and wave soldering per Vishay Package Information Doc. 71197 (Rev. 03-Oct-2022).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 0–20 V logic-level signal; requires ≥10 V for full enhancement; gate leakage < ±100 nA ensures low standby power.
D (Drain)	High-side power switch node	Connected to exposed thermal pad; carries full load current and must be routed over large copper area for heat dissipation.
S (Source)	Reference node / return path	Provides ground reference for gate drive; internal source inductance (L_S = 7.5 nH) impacts high-frequency switching stability.

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports reliable operation under transient overvoltage events without external snubbers (I_AR = 7.7 A, E_AR = 4.2 mJ).
Dynamic dV/dt rating	5.5 V/ns immunity prevents false turn-on in high-noise motor drive or SMPS environments.
Fast switching performance	Turn-on delay 6.8 ns + rise time 27 ns enables >500 kHz operation with minimal overlap loss.
Low Q_gd/Q_g ratio	7.7/16 = 48 % - Reduces Miller effect, improving gate drive efficiency and hard-switching robustness.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912.

Applications

DC-DC Converter Primary Switch	Brushed DC Motor High-Side Driver
Use Scenario: Step-down converter in 24–48 V industrial power supply delivering up to 60 W output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 200–500 kHz PWM frequency. Use Value: Low R_DS(on) minimizes conduction loss; fast switching and low Q_g reduce total power loss below 1.8 W at full load.	Use Scenario: Unidirectional H-bridge leg driving 12–36 V brushed motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side switch enabling PWM-controlled torque and direction reversal via complementary low-side FET. Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid PWM turn-off; body diode t_rr < 260 ns limits shoot-through risk.
Load Switch for 12 V Automotive Subsystem	AC-DC Adapter Secondary-Side Rectifier
Use Scenario: Controlled power-up of infotainment module in 12 V vehicle electrical system with hot-swap protection. IC Role / Device Role / Timing Role: Low-side or high-side load switch managing inrush current and fault isolation. Use Value: 7.7 A continuous rating supports peak loads; 100 V V_DS withstands load-dump transients up to ISO 7637-2 Pulse 5a.	Use Scenario: Synchronous rectifier in 12 V/5 A flyback adapter replacing Schottky diode to improve efficiency. IC Role / Device Role / Timing Role: Active rectifier controlled by transformer auxiliary winding or dedicated controller. Use Value: Low R_DS(on) cuts conduction loss by >40 % vs. 40 V Schottky; body diode Q_rr < 1.3 μC reduces switching loss during dead-time transitions.

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: Step-down converter in 24–48 V industrial power supply delivering up to 60 W output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 200–500 kHz PWM frequency.

Use Value: Low R_DS(on) minimizes conduction loss; fast switching and low Q_g reduce total power loss below 1.8 W at full load.

Use Scenario: Unidirectional H-bridge leg driving 12–36 V brushed motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side switch enabling PWM-controlled torque and direction reversal via complementary low-side FET.

Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid PWM turn-off; body diode t_rr < 260 ns limits shoot-through risk.

Load Switch for 12 V Automotive Subsystem

AC-DC Adapter Secondary-Side Rectifier

Use Scenario: Controlled power-up of infotainment module in 12 V vehicle electrical system with hot-swap protection.

IC Role / Device Role / Timing Role: Low-side or high-side load switch managing inrush current and fault isolation.

Use Value: 7.7 A continuous rating supports peak loads; 100 V V_DS withstands load-dump transients up to ISO 7637-2 Pulse 5a.

Use Scenario: Synchronous rectifier in 12 V/5 A flyback adapter replacing Schottky diode to improve efficiency.

IC Role / Device Role / Timing Role: Active rectifier controlled by transformer auxiliary winding or dedicated controller.

Use Value: Low R_DS(on) cuts conduction loss by >40 % vs. 40 V Schottky; body diode Q_rr < 1.3 μC reduces switching loss during dead-time transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFR120TRPbF-BE3	Same die, identical R_DS(on), Q_g, and avalanche ratings; differs only in tape-and-reel packaging (16 mm vs. 12 mm carrier tape width).	No functional difference; used interchangeably where reel width tolerance permits.	Select IRFR120TRLPBF-BE3 for automated placement requiring 12 mm tape; IRFR120TRPbF-BE3 for legacy 16 mm feeders.
SiHFR120-GE3	Same Vishay DPAK footprint and electrical specs (100 V, 0.27 Ω, 16 nC), but manufactured at alternate facility with GE3 suffix and halogen-free plating.	Identical thermal and switching behavior; qualified per same reliability standards (Doc. 91266).	Choose SiHFR120-GE3 if lead-free/halogen-free compliance is mandatory and BE3 sourcing is constrained.

Compared with IRFR120TRLPBF-BE3, IRFR120TRPbF-BE3 offers identical performance in a wider tape format, while SiHFR120-GE3 provides equivalent electrical behavior with alternate environmental compliance-both require no PCB redesign but differ in logistics and qualification documentation.

Availability

IRFR120TRLPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and automotive load switching requiring stable component supply across multi-year production cycles.

Supply support for IRFR120TRLPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFR120 series belongs to Vishay's TrenchFET® Generation III power MOSFET family, engineered for high-efficiency switching in space-constrained industrial and automotive power systems.

FAQ

What is the maximum continuous drain current for IRFR120TRLPBF-BE3 at 100 °C case temperature?

The IRFR120TRLPBF-BE3 supports 4.9 A continuous drain current at T_C = 100 °C, per Absolute Maximum Ratings table. This value reflects linear derating from 7.7 A at 25 °C using 0.33 W/°C factor. Designers must verify PCB copper area and airflow to maintain safe junction temperature below 150 °C under sustained load.

Does IRFR120TRLPBF-BE3 support logic-level gate drive?

No, IRFR120TRLPBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires V_GS = 10 V to achieve rated R_DS(on) = 0.27 Ω. Driving it with 3.3 V or 5 V will result in significantly higher on-resistance and conduction loss-use only with 10 V gate drivers or level-shifted control signals.

What is the thermal resistance from junction to ambient for IRFR120TRLPBF-BE3 in standard PCB mount?

When mounted on a 1" square FR-4 PCB, IRFR120TRLPBF-BE3 has R_thJA = 50 °C/W. This value assumes minimum recommended copper pads per Application Note 826. For higher power, attach the exposed drain pad to an external heatsink to leverage R_thJC = 3.0 °C/W and avoid thermal runaway.

Can IRFR120TRLPBF-BE3 replace IRFU120 in through-hole designs?

No-IRFR120TRLPBF-BE3 uses DPAK (TO-252) surface-mount packaging, while IRFU120 uses IPAK (TO-251) straight-lead through-hole packaging. Their footprints, soldering methods, and mechanical mounting are incompatible. Use IRFU120PbF or IRFU120TRPbF-BE3 for through-hole applications requiring identical electrical specs.

What is the body diode reverse recovery charge (Q_rr) for IRFR120TRLPBF-BE3?

The body diode Q_rr for IRFR120TRLPBF-BE3 is 0.65–1.3 μC, measured at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss in synchronous rectification and must be accounted for in gate driver timing and dead-time selection to prevent shoot-through.

IRFR120TRLPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR120TRLPBF-BE3 FAQ

1.How can I place an order for IRFR120TRLPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120TRLPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120TRLPBF-BE3 reliable?

The price and inventory of IRFR120TRLPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRLPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR120TRLPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRLPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120TRLPBF-BE3?

IRFR120TRLPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120TRLPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120TRLPBF-BE3?

For technical support, including IRFR120TRLPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRLPBF-BE3 requirements.

6.How does Aetrix verify that IRFR120TRLPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR120TRLPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRLPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR120TRLPBF-BE3?

All IRFR120TRLPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRLPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120TRLPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR120TRLPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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