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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR120TRPBF

Name: IRFR120TRPBF
Brand: Vishay Siliconix
SKU: IRFR120TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120TRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120TRPBF.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

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Product details

Overview

IRFR120TRPBF from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120TRPBF datasheet, IRFR120TRPBF pinout, IRFR120TRPBF application, or IRFR120TRPBF equivalent, key selection criteria include its 100 V drain-source voltage rating, 42 W case-mounted power dissipation, 5.5 V/ns peak diode recovery dV/dt capability, and compatibility with vapor-phase and wave soldering processes.

Technical Context

This MOSFET employs third-generation trench-gate silicon technology optimized for fast switching and ruggedness in unclamped inductive switching (UIS) conditions. Its dynamic dV/dt rating and 210 mJ single-pulse avalanche energy support reliable operation under transient overvoltage stress without external snubbers.

The device integrates a low-loss body diode with 130–260 ns reverse recovery time and 0.65–1.3 μC Q_rr, enabling efficient freewheeling in synchronous rectification and half-bridge topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial SMPS
R_DS(on) @ V_GS = 10 V	0.27 Ω - enables ≤1.5 W conduction loss at 7.7 A continuous current
Q_g	16 nC - determines gate drive power requirement and switching speed in PWM circuits
I_D @ T_C = 25 °C	7.7 A - defines maximum continuous current with heatsink or PCB copper area
E_AS	210 mJ - specifies single-pulse energy handling in inductive turn-off without failure
dV/dt (diode)	5.5 V/ns - ensures stable commutation during fast voltage transitions across body diode
R_thJC	3.0 °C/W - enables thermal design using junction-to-case path for heatsink attachment

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB layout and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive to fully enhance channel; threshold 2.0–4.0 V
D (Drain)	High-side power output	Connected to exposed thermal pad; carries full load current and dissipates heat to PCB
S (Source)	Reference/return node	Common return for gate drive and load current; defines local ground reference for driver IC

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports ≥7.7 A I_AR and 4.2 mJ E_AR for robustness in inductive load switching
Dynamic dV/dt rating	5.5 V/ns ensures immunity to false turn-on during high-slew-rate voltage transients
Surface-mount (DPAK)	Enables automated placement and reflow soldering; compatible with IPC-7351B footprint
Fast switching	6.8 ns t_d(on), 27 ns t_r, 18 ns t_d(off), 17 ns t_f reduce switching losses in 100–500 kHz designs
Low Q_gd/Q_g ratio	7.7/16 = 48 % minimizes Miller-induced oscillation risk during hard switching

Applications

DC-DC Converter Primary Switch	Motor Drive High-Side Switch
Use Scenario: Step-down (buck) converter in 24–48 V industrial power supply delivering up to 15 A output. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor; operates at 250 kHz with 50 ns dead time. Use Value: 0.27 Ω R_DS(on) limits conduction loss to <1.2 W at full load; 16 nC Q_g allows use of low-cost gate drivers like TC4427.	Use Scenario: 3-phase BLDC motor controller for HVAC fan actuator with 30 V bus and 8 A phase current. IC Role / Device Role / Timing Role: High-side switch in half-bridge leg; synchronized with low-side FET via complementary PWM with 200 ns dead time. Use Value: 5.5 V/ns dV/dt rating prevents shoot-through during rapid V_DS transitions; body diode trr <260 ns reduces cross-conduction loss.
Load Switch for 12 V System Rail	LED Driver Current Regulator
Use Scenario: Controlled power-up of FPGA core rail in telecom base station board with inrush limiting. IC Role / Device Role / Timing Role: Low-side load switch enabling soft-start via gate resistor; handles 6 A steady-state current. Use Value: 7.7 A I_D rating provides 30 % margin over max load; 210 mJ E_AS absorbs inductive kickback from downstream LDO input filter.	Use Scenario: Constant-current LED string driver for industrial signage with 36 V forward voltage and 1.2 A current. IC Role / Device Role / Timing Role: Linear pass element in analog dimming loop; biased in linear region for precise current regulation. Use Value: 100 V V_DS withstands open-circuit LED string transients; 3.0 °C/W R_thJC allows direct heatsink mounting to sustain 2.5 W dissipation.

DC-DC Converter Primary Switch

Motor Drive High-Side Switch

Use Scenario: Step-down (buck) converter in 24–48 V industrial power supply delivering up to 15 A output.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to output inductor; operates at 250 kHz with 50 ns dead time.

Use Value: 0.27 Ω R_DS(on) limits conduction loss to <1.2 W at full load; 16 nC Q_g allows use of low-cost gate drivers like TC4427.

Use Scenario: 3-phase BLDC motor controller for HVAC fan actuator with 30 V bus and 8 A phase current.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg; synchronized with low-side FET via complementary PWM with 200 ns dead time.

Use Value: 5.5 V/ns dV/dt rating prevents shoot-through during rapid V_DS transitions; body diode trr <260 ns reduces cross-conduction loss.

Load Switch for 12 V System Rail

LED Driver Current Regulator

Use Scenario: Controlled power-up of FPGA core rail in telecom base station board with inrush limiting.

IC Role / Device Role / Timing Role: Low-side load switch enabling soft-start via gate resistor; handles 6 A steady-state current.

Use Value: 7.7 A I_D rating provides 30 % margin over max load; 210 mJ E_AS absorbs inductive kickback from downstream LDO input filter.

Use Scenario: Constant-current LED string driver for industrial signage with 36 V forward voltage and 1.2 A current.

IC Role / Device Role / Timing Role: Linear pass element in analog dimming loop; biased in linear region for precise current regulation.

Use Value: 100 V V_DS withstands open-circuit LED string transients; 3.0 °C/W R_thJC allows direct heatsink mounting to sustain 2.5 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR120NTRPBF	Lower R_DS(on) (0.13 Ω), higher Q_g (29 nC), same DPAK package	Better conduction efficiency but requires stronger gate drive; not suitable for space-constrained layouts needing minimal drive power	Select when conduction loss dominates and gate drive capability permits higher Q_g
SiHFR120TR-GE3	Identical R_DS(on), Q_g, and avalanche specs; halogen-free, RoHS-compliant variant	No functional difference; used where lead-free/halogen-free compliance is mandated by end-equipment standards	Select for EU/Asia export programs requiring full material declaration and green compliance

Compared with IRFR120TRPBF, IRLR120NTRPBF delivers lower on-resistance at cost of increased gate drive demand, while SiHFR120TR-GE3 offers identical electrical performance with enhanced environmental compliance-neither is pin-compatible without verifying footprint tolerances per JEDEC TO-252AA.

Availability

IRFR120TRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRFR120TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRFR120TRPBF belongs to Vishay's third-generation power MOSFET family engineered for rugged switching in unclamped inductive loads, emphasizing fast turn-on/off, avalanche survivability, and surface-mount manufacturability.

FAQ

What is the maximum continuous drain current for IRFR120TRPBF at 100 °C case temperature?

The IRFR120TRPBF supports 4.9 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package when mounted on standard FR-4 PCB without additional heatsinking. Designers must verify junction temperature using R_thJC = 3.0 °C/W and actual power dissipation to ensure T_J remains ≤150 °C. The IRFR120TRPBF data sheet confirms this value applies under steady-state conduction with proper PCB copper area.

Does IRFR120TRPBF require a gate resistor for safe operation in switching applications?

Yes, IRFR120TRPBF requires an external gate resistor to control dI/dt and suppress ringing caused by parasitic inductance in the gate loop. Typical values range from 10 Ω to 47 Ω depending on switching frequency and drive strength; the datasheet uses R_g = 18 Ω in switching time tests. Omitting the resistor risks overshoot, shoot-through in bridge configurations, and accelerated gate oxide wear. The IRFR120TRPBF gate threshold is 2.0–4.0 V, so resistor selection must ensure adequate drive voltage swing without exceeding ±20 V V_GS limit.

Can IRFR120TRPBF be used in linear (analog) mode for constant-current regulation?

Yes, IRFR120TRPBF can operate in the linear region for current regulation, as confirmed by its Safe Operating Area (SOA) curve in Figure 8. At T_C = 25 °C, it supports 7.7 A at 10 V V_DS with pulse width ≤1 ms. For DC operation, power dissipation must stay within 2.5 W (PCB mount) or 42 W (case mount) limits, and thermal design must maintain T_J ≤150 °C. The IRFR120TRPBF body diode characteristics and SOA make it suitable for LED constant-current drivers where V_DS remains <20 V.

What is the recommended PCB pad layout for IRFR120TRPBF in DPAK package?

Vishay recommends a minimum 0.224" × 0.420" (5.69 mm × 10.67 mm) copper pad for the drain thermal tab, per Application Note 826. The pad should be solid, unslotted, and connected to internal ground/power planes via ≥4 thermal vias (0.3 mm diameter, spaced ≤1.5 mm apart). Gate and source pads follow standard 0.087" × 0.090" (2.20 mm × 2.29 mm) dimensions. This layout ensures R_thJA ≤50 °C/W and mechanical reliability during reflow. The IRFR120TRPBF datasheet specifies these dimensions for optimal thermal performance and solder joint integrity.

Is IRFR120TRPBF suitable for automotive applications per AEC-Q101 qualification?

No, IRFR120TRPBF is not AEC-Q101 qualified. It is rated for industrial temperature range (−55 °C to +150 °C) but lacks the stress testing, failure analysis, and traceability required for automotive use. Vishay offers AEC-Q101 variants such as SQJQ412E or SIHFU120-GE3 for automotive-grade deployment. Designers selecting IRFR120TRPBF must confirm end-equipment requirements; if automotive compliance is mandatory, the IRFR120TRPBF cannot be substituted without redesign and requalification.

IRFR120TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR120TRPBF FAQ

1.How can I place an order for IRFR120TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120TRPBF reliable?

The price and inventory of IRFR120TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRPBF is usually 5 days.

3.What payment methods are accepted for IRFR120TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120TRPBF?

IRFR120TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120TRPBF?

For technical support, including IRFR120TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRPBF requirements.

6.How does Aetrix verify that IRFR120TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFR120TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRPBF meets industry standards.

7.What is the process for return or replacement of IRFR120TRPBF?

All IRFR120TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120TRPBF part is unused and in its original packaging.

Return procedure for IRFR120TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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