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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR120TRPBF-BE3

Name: IRFR120TRPBF-BE3
Brand: Vishay Siliconix
SKU: IRFR120TRPBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR120TRPBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120TRPBF-BE3.pdf

Description:: MOSFET N-CH 100V 7.7A DPAK

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Product details

Overview

IRFR120TRPBF-BE3 from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω R_DS(on) at V_GS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120TRPBF-BE3 datasheet, IRFR120TRPBF-BE3 pinout, IRFR120TRPBF-BE3 application, or IRFR120TRPBF-BE3 equivalent, key selection criteria include its 42 W junction-to-case thermal capability, 5.5 V/ns peak diode recovery dV/dt rating, and compatibility with vapor-phase and wave soldering processes for high-reliability PCB assembly.

Technical Context

This third-generation TrenchFET® MOSFET uses optimized silicon structure to achieve low conduction loss and fast switching with minimal gate drive requirements. Its dynamic dV/dt rating and unclamped inductive switching (UIS) capability support robust operation in hard-switched topologies without external snubbers.

The device integrates a low-forward-drop body diode (V_SD = 2.5 V at 7.7 A) with 130–260 ns reverse recovery time and 0.65–1.3 μC Q_rr, enabling efficient synchronous rectification and freewheeling in buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 80 V DC with margin for transients in industrial SMPS
R_DS(on) max	0.27 Ω at V_GS = 10 V - enables ≤2.0 W conduction loss at 9 A continuous drain current
Q_g max	16 nC - determines gate drive power and switching speed in 100–500 kHz PWM applications
I_D continuous	7.7 A at T_C = 25 °C - usable up to 4.9 A at 100 °C case temperature with linear derating
E_AS	210 mJ single-pulse avalanche energy - allows safe operation under inductive turn-off stress without clamping
R_thJC	3.0 °C/W - enables direct heatsink mounting for thermal management in compact power stages
dV/dt rating	5.5 V/ns - ensures immunity to parasitic turn-on during high-speed switching in noisy environments

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated placement and reflow soldering on FR-4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; 4.4 nC Q_gs enables fast turn-on with standard gate drivers
D (Drain)	High-side power output	Exposed metal tab connects directly to PCB copper pour for thermal dissipation and low-inductance return path
S (Source)	Reference/return node	Provides low-impedance source connection; internal source inductance LS = 7.5 nH affects high-di/dt switching behavior

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 7.7 A I_AR and 4.2 mJ E_AR - eliminates need for external protection in inductive load switching
Dynamic dV/dt rating	5.5 V/ns - prevents false triggering during fast voltage transitions in high-noise motor drives
Fast switching	td(on) = 6.8 ns, tr = 27 ns - reduces switching losses in 200–500 kHz DC-DC converters
Surface-mount (DPAK)	Compatible with vapor-phase, infrared, and wave soldering - suitable for high-volume automated assembly
Low Q_gd/Q_g ratio	7.7/16 = 48% - improves Miller immunity and enables stable operation with moderate gate resistance

Applications

DC-DC Converter Primary Switch	Motor Drive High-Side Switch
Use Scenario: Step-down regulation in 24–48 V industrial power supplies delivering up to 60 W. IC Role / Device Role / Timing Role: Main switching element in synchronous buck topology operating at 300 kHz with 10 V gate drive. Use Value: 0.27 Ω R_DS(on) limits conduction loss to <1.5 W at 7 A, while 16 nC Q_g enables efficient gate driving with TC4427-class drivers.	Use Scenario: High-side switch controlling brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Unidirectional power delivery with integrated body diode freewheeling during PWM off-time. Use Value: 210 mJ E_AS withstands inductive kickback during abrupt current interruption; 2.5 V V_SD minimizes freewheeling loss.
LED Driver Load Switch	Hot-Swap Protection Circuit
Use Scenario: Constant-current LED string control in architectural lighting systems with 36 V bus. IC Role / Device Role / Timing Role: Low-side or high-side current regulator using analog dimming or PWM modulation. Use Value: 7.7 A I_D supports multi-string configurations; 5.5 V/ns dV/dt rating prevents false turn-on during rapid bus transients.	Use Scenario: Inrush current limiting and fault isolation in 12–24 V backplane power distribution. IC Role / Device Role / Timing Role: Controlled ramp-up of supply voltage to downstream circuitry via gate-controlled slew rate. Use Value: Repetitive avalanche rating allows safe operation during short-circuit events; 3.0 °C/W R_thJC supports thermal shutdown coordination.

DC-DC Converter Primary Switch

Motor Drive High-Side Switch

Use Scenario: Step-down regulation in 24–48 V industrial power supplies delivering up to 60 W.

IC Role / Device Role / Timing Role: Main switching element in synchronous buck topology operating at 300 kHz with 10 V gate drive.

Use Value: 0.27 Ω R_DS(on) limits conduction loss to <1.5 W at 7 A, while 16 nC Q_g enables efficient gate driving with TC4427-class drivers.

Use Scenario: High-side switch controlling brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Unidirectional power delivery with integrated body diode freewheeling during PWM off-time.

Use Value: 210 mJ E_AS withstands inductive kickback during abrupt current interruption; 2.5 V V_SD minimizes freewheeling loss.

LED Driver Load Switch

Hot-Swap Protection Circuit

Use Scenario: Constant-current LED string control in architectural lighting systems with 36 V bus.

IC Role / Device Role / Timing Role: Low-side or high-side current regulator using analog dimming or PWM modulation.

Use Value: 7.7 A I_D supports multi-string configurations; 5.5 V/ns dV/dt rating prevents false turn-on during rapid bus transients.

Use Scenario: Inrush current limiting and fault isolation in 12–24 V backplane power distribution.

IC Role / Device Role / Timing Role: Controlled ramp-up of supply voltage to downstream circuitry via gate-controlled slew rate.

Use Value: Repetitive avalanche rating allows safe operation during short-circuit events; 3.0 °C/W R_thJC supports thermal shutdown coordination.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR120TRPBF	Same V_DS (100 V), lower R_DS(on) (0.22 Ω), higher Q_g (21 nC), same DPAK package	Better conduction efficiency but slower switching; requires stronger gate driver	Preferred when conduction loss dominates over switching loss in <200 kHz designs
SiHF120R-T1-GE3	Same R_DS(on) (0.27 Ω), identical Q_g (16 nC), same DPAK, halogen-free construction	No functional difference; qualified per Vishay's "-GE3" eco-compliance standard	Drop-in replacement where RoHS/REACH compliance is mandatory and BE3 facility code is not required

Compared with IRFR120TRPBF-BE3, IRLR120TRPBF trades higher gate charge for lower on-resistance-favoring low-frequency, high-current use cases-while SiHF120R-T1-GE3 matches all electrical specs and package dimensions but substitutes lead-free/halogen-free materials for environmental compliance without performance trade-offs.

Availability

IRFR120TRPBF-BE3 is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-qualified manufacturing facilities.

Supply support for IRFR120TRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRFR120 series belongs to Vishay's third-generation TrenchFET® power MOSFET product line, engineered specifically for high-reliability surface-mount power conversion and switching applications in industrial, automotive, and computing environments.

FAQ

What is the maximum continuous drain current rating for IRFR120TRPBF-BE3 at 100 °C case temperature?

The IRFR120TRPBF-BE3 supports 4.9 A continuous drain current at T_C = 100 °C, based on linear derating from 7.7 A at 25 °C with a factor of 0.33 W/°C. This value assumes proper PCB copper area and thermal interface to maintain junction temperature below 150 °C under steady-state conditions.

Does IRFR120TRPBF-BE3 have avalanche capability, and how is it specified?

Yes, IRFR120TRPBF-BE3 is repetitively avalanche rated with I_AR = 7.7 A and E_AR = 4.2 mJ, and single-pulse avalanche energy E_AS = 210 mJ. These ratings are validated per JEDEC JESD24-11 test conditions and assume pulse width and duty cycle limits defined in the datasheet figure 11.

What is the gate threshold voltage range for IRFR120TRPBF-BE3, and why does it matter for drive design?

The gate-source threshold voltage V_GS(th) for IRFR120TRPBF-BE3 is 2.0–4.0 V at T_J = 25 °C. This range confirms logic-level compatibility with 5 V microcontrollers but requires ≥10 V gate drive to achieve full R_DS(on) specification-critical for minimizing conduction loss in power stages.

Can IRFR120TRPBF-BE3 be used in through-hole designs?

No-IRFR120TRPBF-BE3 is exclusively packaged in DPAK (TO-252), a surface-mount outline. For through-hole mounting, the functionally equivalent IRFU120TRPBF-BE3 (IPAK/TO-251) should be selected, sharing identical electrical specifications but differing in lead form and thermal mounting method.

What is the body diode forward voltage of IRFR120TRPBF-BE3, and how does it affect freewheeling performance?

The body diode forward voltage V_SD of IRFR120TRPBF-BE3 is 2.5 V at I_S = 7.7 A and T_J = 25 °C. This relatively low drop reduces conduction loss during freewheeling intervals in buck or half-bridge topologies, though its 130–260 ns t_rr necessitates careful layout to minimize voltage overshoot.

IRFR120TRPBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA

IRFR120TRPBF-BE3 FAQ

1.How can I place an order for IRFR120TRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120TRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120TRPBF-BE3 reliable?

The price and inventory of IRFR120TRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR120TRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120TRPBF-BE3?

IRFR120TRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120TRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120TRPBF-BE3?

For technical support, including IRFR120TRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRPBF-BE3 requirements.

6.How does Aetrix verify that IRFR120TRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR120TRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR120TRPBF-BE3?

All IRFR120TRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120TRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR120TRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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