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Vishay Siliconix IRFR120TRR
- Part No.:
- IRFR120TRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR120TRR.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:8,247
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Product details
Overview
IRFR120TRR from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR120TRR datasheet, IRFR120TRR pinout, IRFR120TRR application, or IRFR120TRR equivalent, this page delivers verified electrical specs, thermal derating behavior, body diode recovery characteristics (trr = 130–260 ns), PCB-mount power dissipation (2.5 W), and validated alternative options for high-reliability discrete switching designs.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining rugged unclamped inductive switching capability (EAS = 210 mJ). Its gate threshold voltage (2.0–4.0 V) ensures compatibility with standard 10 V gate drivers and supports stable turn-on under wide temperature ranges (−55 °C to +150 °C).
The device integrates a fast, low-Qrr (0.65–1.3 μC) body diode with controlled reverse recovery (dI/dt ≤ 110 A/μs), enabling efficient synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance from junction-to-case is 3.0 °C/W, supporting direct heatsink attachment via the exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for 24–48 V bus applications with 2× safety margin |
| RDS(on) @ VGS = 10 V | 0.27 Ω - Enables <1.5 W conduction loss at 7.7 A continuous drain current |
| ID (TC = 25 °C) | 7.7 A - Continuous current rating with case temperature maintained at 25 °C |
| Qg | 16 nC - Gate drive energy requirement determines driver sizing and switching speed trade-off |
| EAS | 210 mJ - Single-pulse avalanche energy tolerance enables robustness against inductive kickback |
| trr | 130–260 ns - Body diode recovery time impacts switching loss and EMI in flyback/freewheeling stages |
| RthJC | 3.0 °C/W - Junction-to-case thermal resistance allows direct thermal path to heatsink or copper pour |
| PD (PCB mount) | 2.5 W - Maximum power dissipation on 1" FR-4 PCB without external heatsink |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Standard lead configuration: G (Gate), D (Drain), S (Source) - leads aligned in straight line, pin 1 = Gate, pin 2 = Drain, pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate terminal | Controls channel conduction; requires ≥10 V for full enhancement; max ±20 V rating |
| Pin 2 (D) | Drain terminal / exposed pad | Main high-side current path; electrically and thermally connected to metal tab (drain potential) |
| Pin 3 (S) | Source terminal | Reference node for gate drive; connects to power ground or low-side switch node |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 7.7 A IAR and 4.2 mJ EAR - enables reliable operation in inductive load switching without snubbers |
| Dynamic dV/dt rated | 5.5 V/ns - immune to false turn-on during high-speed voltage transients in noisy power environments |
| Fast switching with low Qg | 16 nC Qg and 6.8 ns td(on) - reduces transition losses in 100–500 kHz SMPS designs |
| Low RDS(on) × Qg figure of merit | 4.32 Ω·nC - balances conduction and switching loss for high-efficiency mid-power converters |
| Enhanced body diode performance | trr = 130–260 ns, Qrr = 0.65–1.3 μC - minimizes reverse recovery loss in non-synchronous buck or flyback freewheeling |
Applications
| Industrial Motor Drive | DC-DC Converter Switch |
|---|---|
|
Use Scenario: Half-bridge gate driver stage controlling 24 V brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling 5–7 A peak load current with PWM frequencies up to 200 kHz. Use Value: 0.27 Ω RDS(on) limits I²R loss to <1.1 W at 7 A; 210 mJ EAS absorbs back-EMF spikes during abrupt stop commands. |
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback converter for telecom power modules. IC Role / Device Role / Timing Role: High-voltage switching transistor operating at 250 kHz with 50% duty cycle and 80 V VDS stress. Use Value: 100 V VDS provides 1.6× margin over 48 V bus; 16 nC Qg enables clean 10 ns rise/fall edges with 18 Ω gate resistor. |
| LED Constant-Current Driver | Power OR-ing Circuit |
|
Use Scenario: High-side current regulator for 36 V, 1.2 A LED strings in outdoor signage systems. IC Role / Device Role / Timing Role: Linear or PWM-controlled pass element managing thermal dissipation across ambient temperatures up to 85 °C. Use Value: RDS(on) drift <15% from −40 °C to +125 °C ensures stable current regulation; 150 °C TJ(max) supports sealed enclosure operation. |
Use Scenario: Reverse-polarity protection and seamless source switchover in dual-input 24 V industrial PLC power rails. IC Role / Device Role / Timing Role: Low-loss ideal diode replacement using source-connected configuration with gate driven by controller. Use Value: 2.5 V VSD body diode forward drop minimized by low RDS(on); fast trr prevents shoot-through during source transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR120PbF-BE3 | Same die, identical RDS(on), Qg, and avalanche ratings; differs only in tape-and-reel packaging (TR vs. TRR denotes different reel size/quantity) | No functional difference; TRR variant optimized for high-volume automated placement with tighter tape tension control | Select IRFR120TRR when using pick-and-place machines requiring 24 mm carrier tape and 2,000-unit reels |
| SiHFR120TR-GE3 | Same Vishay die, identical absolute maximum ratings and SOA; halogen-free, RoHS-compliant packaging (GE3 suffix), same DPAK footprint | Identical electrical performance; GE3 version required for EU medical/industrial compliance where Pb-free/halogen-free is mandated | Choose SiHFR120TR-GE3 for CE-marked equipment or when supply chain mandates green material compliance |
Compared with IRFR120TRR, IRFR120PbF-BE3 offers identical electrical behavior but different packaging logistics, while SiHFR120TR-GE3 delivers identical performance with certified halogen-free construction-neither is pin-compatible in the sense of cross-manufacturer substitution, but both are functionally and physically interchangeable within the Vishay DPAK family.
Availability
IRFR120TRR is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, LED drivers, and power OR-ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRFR120TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.
The IRFR120TRR belongs to Vishay's third-generation TrenchFET® power MOSFET product line, engineered specifically for high-efficiency, high-ruggedness switching in space-constrained surface-mount power systems.
FAQ
What is the maximum continuous drain current for IRFR120TRR at 100 °C case temperature?
The IRFR120TRR supports 4.9 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the DPAK package; designers must ensure adequate PCB copper area or heatsinking to maintain case temperature below this threshold during sustained operation. The IRFR120TRR data sheet specifies linear derating of 0.33 W/°C above 25 °C case temperature.
Does IRFR120TRR have a specified avalanche energy rating?
Yes, the IRFR120TRR is repetitively avalanche rated with 4.2 mJ EAR and 7.7 A IAR, and single-pulse rated for 210 mJ EAS. These values are measured under defined test conditions (VDD = 25 V, L = 5.3 mH, Rg = 25 Ω) and confirm robustness against inductive switching stresses without external protection components. The IRFR120TRR datasheet includes Fig. 12c showing EAS vs. IAS.
What is the gate threshold voltage range for IRFR120TRR?
The IRFR120TRR has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction due to noise. The IRFR120TRR's typical VGS(th) is 3.0 V, and it remains stable across temperature per the transfer characteristics in Fig. 3.
Can IRFR120TRR be used in linear (analog) mode operation?
The IRFR120TRR is not characterized or guaranteed for linear-mode operation; its Safe Operating Area (SOA) curve (Fig. 8) defines only pulsed and DC boundaries under specific conditions. While it can conduct continuously at low VDS, sustained linear operation risks thermal runaway due to positive RDS(on) temperature coefficient and limited SOA at high VDS/ID combinations. For IRFR120TRR linear applications, derating and thermal monitoring are essential-and alternate parts qualified for analog use should be preferred.
What is the thermal resistance from junction to ambient for IRFR120TRR on a standard PCB?
When mounted on a 1" square FR-4 PCB, the IRFR120TRR exhibits a maximum junction-to-ambient thermal resistance (RthJA) of 50 °C/W. This value assumes no additional heatsinking and defines the worst-case thermal path for estimating junction temperature rise: TJ = TA + (PD × 50). The IRFR120TRR's lower RthJC of 3.0 °C/W highlights the benefit of attaching the exposed drain pad to a thermal plane or heatsink to improve cooling.
IRFR120TRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR120TRR FAQ
1.How can I place an order for IRFR120TRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR120TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR120TRR reliable?
The price and inventory of IRFR120TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRR is usually 5 days.
3.What payment methods are accepted for IRFR120TRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR120TRR?
IRFR120TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR120TRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR120TRR?
For technical support, including IRFR120TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRR requirements.
6.How does Aetrix verify that IRFR120TRR is sourced from the original manufacturer or authorized distributors?
All IRFR120TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRR meets industry standards.
7.What is the process for return or replacement of IRFR120TRR?
All IRFR120TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR120TRR part is unused and in its original packaging.
Return procedure for IRFR120TRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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