Vishay Siliconix IRFR120TRRPBF
- Part No.:
- IRFR120TRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR120TRRPBF.pdf
- Description:
- MOSFET N-CH 100V 7.7A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:4,528
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Product details
Overview
IRFR120TRRPBF from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.
For engineers reviewing the IRFR120TRRPBF datasheet, IRFR120TRRPBF pinout, IRFR120TRRPBF application, or IRFR120TRRPBF equivalent, key selection criteria include its 42 W TC power dissipation, 3.0 °C/W junction-to-case thermal resistance, dV/dt ruggedness (5.5 V/ns), and compatibility with vapor-phase and wave soldering processes.
Technical Context
This third-generation TrenchFET® MOSFET uses optimized silicon geometry to achieve low conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drivers, and its 34 pF reverse transfer capacitance supports fast, controlled switching transitions.
The device integrates a low-loss body diode with 130–260 ns reverse recovery time and 0.65–1.3 μC Qrr, enabling efficient synchronous rectification and flyback operation without external Schottky supplementation in moderate-frequency designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in offline and industrial SMPS |
| RDS(on) @ VGS = 10 V | 0.27 Ω - enables ≤1.5 W conduction loss at 7.7 A continuous drain current under heatsinked conditions |
| Qg | 16 nC - determines gate drive power requirement; compatible with common 1–2 A peak gate drivers |
| ID @ TC = 25 °C | 7.7 A - defines maximum continuous current when mounted on a 1"² FR-4 PCB with copper pour |
| EAS | 210 mJ - specifies single-pulse avalanche energy handling for inductive load turn-off without snubbers |
| RthJC | 3.0 °C/W - enables direct thermal coupling to heatsinks for high-power density board layouts |
| dV/dt Rating | 5.5 V/ns - ensures immunity to false triggering during high-slew-rate switching in noisy environments |
Pinout & Package
DPAK (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for automated assembly and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V logic-level signal; 4.4 nC gate-source charge enables fast turn-on with minimal driver stress |
| D (Drain) | High-side power output | Connected to exposed thermal pad; carries full load current and dissipates heat directly to PCB copper or heatsink |
| S (Source) | Reference/return path | Provides ground reference for gate drive; internal source inductance (7.5 nH) affects high-speed switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports 7.7 A IAR and 4.2 mJ EAR - eliminates need for external clamping in motor drive freewheeling paths |
| Dynamic dV/dt rating | 5.5 V/ns immunity - prevents spurious turn-on during fast bus transients in half-bridge topologies |
| Surface-mount (DPAK) | Compatible with vapor-phase, infrared, and wave soldering - enables high-yield SMT production without lead-forming |
| Fast switching | 6.8 ns turn-on delay + 27 ns rise time - reduces switching losses below 200 kHz in buck and flyback converters |
| Low Qgd/Qg ratio | 7.7/16 = 48% - improves Miller immunity and enables stable operation with moderate gate resistance (e.g., 10–25 Ω) |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 24–48 V bus to 5–12 V logic supply in programmable logic controllers. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 100–500 kHz with forced PWM control. Use Value: 0.27 Ω RDS(on) minimizes conduction loss at 5–8 A loads; 16 nC Qg allows efficient drive with integrated controller gate drivers. | Use Scenario: H-bridge half-bridge leg controlling 12–36 V brushed motors in HVAC actuators and industrial valves. IC Role / Device Role / Timing Role: Low-side or high-side switching element with bidirectional current handling via body diode. Use Value: 210 mJ EAS withstands inductive kickback during PWM commutation; 130 ns trr enables clean freewheeling without cross-conduction risk. |
| AC-DC Auxiliary Supply | Hot-Swap Protection Circuit |
Use Scenario: Standby power supply in enterprise server PSUs, deriving 3.3 V/5 V from main 12 V rail. IC Role / Device Role / Timing Role: Primary-side switch in self-oscillating or current-mode flyback topology. Use Value: Repetitive avalanche rating handles reflected flyback spikes without snubber; 100 V VDS provides margin over 12 V × 2.5× reflection. | Use Scenario: Inrush current limiter and fault disconnect in 24–48 V backplane power distribution modules. IC Role / Device Role / Timing Role: Load switch configured with external gate resistor and current-sense feedback. Use Value: 7.7 A continuous rating supports ≥5 A hot-swap loads; 3.0 °C/W RthJC enables precise thermal foldback using case temperature sensing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR120NTRPBF | Lower RDS(on) (0.13 Ω), higher Qg (21 nC), same DPAK package | Better conduction efficiency at <5 A; higher gate drive loss above 200 kHz | Select when lower steady-state loss dominates over switching loss in <100 kHz applications |
| SiHF120R-GE3 | Same RDS(on) (0.27 Ω), 15 nC Qg, halogen-free construction | Identical electrical performance; RoHS-compliant marking and packaging | Select when compliance with latest material declarations (e.g., Vishay Doc. 99912) is required |
Compared with IRFR120TRRPBF, IRLR120NTRPBF trades higher gate charge for significantly lower on-resistance-favoring low-frequency, high-current use cases-while SiHF120R-GE3 offers identical parametric performance with updated environmental compliance, making it a drop-in replacement where Pb-free/halogen-free certification is mandated.
Availability
IRFR120TRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and hot-swap protection circuits requiring stable component supply across multi-year production cycles.
Supply support for IRFR120TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.
The IRFR120 series belongs to Vishay's TrenchFET® Generation III power MOSFET family, engineered specifically for high-efficiency, high-ruggedness switching in space-constrained surface-mount power systems.
FAQ
What is the maximum continuous drain current for IRFR120TRRPBF at 100 °C case temperature?
The IRFR120TRRPBF supports 4.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package under real-world PCB mounting conditions and must be validated against actual board layout and ambient airflow. The IRFR120TRRPBF maintains safe operation only when junction temperature remains ≤150 °C.
Does IRFR120TRRPBF require a gate resistor for stable switching?
Yes, IRFR120TRRPBF benefits from an external gate resistor (typically 10–25 Ω) to dampen ringing caused by its 7.5 nH internal source inductance and 34 pF Crss. Without proper gate resistance, parasitic oscillation can occur during hard switching, increasing EMI and risking gate oxide overstress. The IRFR120TRRPBF gate drive loop must be minimized in length and routed over solid ground plane.
Can IRFR120TRRPBF be used in avalanche mode repeatedly?
Yes, IRFR120TRRPBF is explicitly rated for repetitive avalanche operation with IAR = 7.7 A and EAR = 4.2 mJ per pulse, provided pulse width and duty cycle remain within limits defined in Figure 11 of the datasheet. This capability allows the IRFR120TRRPBF to replace snubber networks in inductive load switching, but thermal management of the avalanche energy must be verified per application.
What is the body diode forward voltage of IRFR120TRRPBF at 7.7 A?
The IRFR120TRRPBF body diode exhibits a typical forward voltage of 2.5 V at IS = 7.7 A and TJ = 25 °C, as measured with VGS = 0 V. This relatively high VSD indicates a standard non-optimized body diode-acceptable for infrequent freewheeling but not recommended for synchronous rectification above 100 kHz without external Schottky assistance.
Is IRFR120TRRPBF compatible with lead-free reflow profiles?
Yes, IRFR120TRRPBF is qualified for lead-free soldering with peak temperature up to 260 °C for 10 seconds, per JEDEC J-STD-020. Its DPAK package is designed for vapor-phase, infrared, and wave soldering. The IRFR120TRRPBF "-TRRPBF" suffix confirms Pb-free and halogen-free construction, meeting RoHS Directive 2011/65/EU and Vishay's material categorization standard (Doc. 99912).
IRFR120TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
IRFR120TRRPBF FAQ
1.How can I place an order for IRFR120TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR120TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR120TRRPBF reliable?
The price and inventory of IRFR120TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR120TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR120TRRPBF?
IRFR120TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR120TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR120TRRPBF?
For technical support, including IRFR120TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRRPBF requirements.
6.How does Aetrix verify that IRFR120TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR120TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR120TRRPBF?
All IRFR120TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR120TRRPBF part is unused and in its original packaging.
Return procedure for IRFR120TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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