Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFR120TRRPBF-BE3

Part No.:
IRFR120TRRPBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRFR120TRRPBF-BE3.pdf
Description:
MOSFET N-CH 100V 7.7A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,095

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFR120TRRPBF-BE3 from Vishay Siliconix is a 100 V, 7.7 A N-channel surface-mount power MOSFET in DPAK (TO-252) package, featuring 0.27 Ω RDS(on) at VGS = 10 V, 16 nC total gate charge, and repetitive avalanche rating-designed for DC-DC converters, motor control, and load switching in industrial power supplies.

For engineers reviewing the IRFR120TRRPBF-BE3 datasheet, IRFR120TRRPBF-BE3 pinout, IRFR120TRRPBF-BE3 application, or IRFR120TRRPBF-BE3 equivalent, key selection criteria include its 42 W TC power dissipation, 3.0 °C/W junction-to-case thermal resistance, dV/dt ruggedness (5.5 V/ns), and compatibility with vapor-phase and wave soldering processes.

Technical Context

This third-generation TrenchFET® MOSFET employs planar trench gate architecture to achieve low on-resistance while maintaining robust unclamped inductive switching capability. Its dynamic dV/dt rating and 210 mJ single-pulse avalanche energy support reliable operation under transient overvoltage conditions in hard-switched topologies.

The device integrates a fast-recovery body diode (trr = 130–260 ns, Qrr = 0.65–1.3 μC) and exhibits linear SOA up to 100 V/7.7 A at TC = 25 °C. Gate threshold voltage (2.0–4.0 V) and ±20 V VGS rating enable direct drive from standard logic-level controllers without level-shifting.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Maximum blocking voltage for 48 V input systems with 2× safety margin
RDS(on) @ VGS = 10 V 0.27 Ω - Enables ≤2.0 W conduction loss at 7.7 A continuous drain current
ID (TC = 25 °C) 7.7 A - Continuous current rating with heatsink; derates to 4.9 A at 100 °C case temperature
Qg 16 nC - Determines gate driver current requirement (~1.6 mA avg. for 100 kHz switching)
EAS 210 mJ - Supports unclamped inductive turn-off without external snubber in <100 μH applications
RthJC 3.0 °C/W - Enables efficient thermal path to PCB copper pour or heatsink in compact layouts
trr 130–260 ns - Limits reverse recovery losses during synchronous rectification or freewheeling

Pinout & Package

DPAK (TO-252) package with exposed drain pad for thermal and electrical connection; surface-mount footprint compatible with IPC-7351B standard pads per Application Note 826.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 0–10 V logic-level signals; 4.4 nC Qgs enables fast turn-on with low gate resistance
D (Drain) High-side power terminal Exposed metal tab-must be connected to high-current ground plane or heatsink; electrically tied to internal die backside
S (Source) Reference node / return path Low-inductance source connection critical for minimizing switching oscillation; LS = 7.5 nH specified

Key Features

Feature Design Value
Repetitive avalanche rated 7.7 A IAR, 4.2 mJ EAR - Eliminates need for external clamping in inductive load switching
Dynamic dV/dt immunity 5.5 V/ns - Prevents spurious turn-on during high dv/dt transients in half-bridge configurations
Fast switching performance td(on) = 6.8 ns, tr = 27 ns - Reduces switching losses in 100–500 kHz SMPS designs
Low gate charge Qgd/Qg = 7.7/16 = 48 % - Improves Miller immunity and reduces required gate drive energy
Surface-mount optimized DPAK footprint with 2.29 mm lead pitch - Compatible with automated pick-and-place and reflow profiles per JEDEC J-STD-020

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24–48 V bus to 5–12 V for industrial I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–300 kHz with forced PWM control.

Use Value: 0.27 Ω RDS(on) minimizes conduction loss at 5–8 A load; 16 nC Qg ensures clean gate drive with 10 Ω series resistor.

Use Scenario: H-bridge drive for 24 V, 5 A brushed motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling diode conduction.

Use Value: Body diode trr = 130–260 ns and Qrr = 0.65–1.3 μC reduce shoot-through risk and switching loss during commutation.

LED Constant-Current Driver Hot-Swap Controller

Use Scenario: Constant-current dimming of high-brightness LED strings in signage and lighting fixtures.

IC Role / Device Role / Timing Role: Series pass element modulated via PWM or analog current sense feedback loop.

Use Value: Repetitive avalanche rating (7.7 A, 4.2 mJ) absorbs inductive kickback from LED string inductance during fault events.

Use Scenario: Inrush current limiting and fault protection in 12–48 V backplane power distribution.

IC Role / Device Role / Timing Role: Main pass transistor controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: 100 V VDS supports 48 V systems with surge margin; 3.0 °C/W RthJC enables stable operation under sustained 5–6 A load currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRFR1205TRPBF Lower VDS (55 V), lower RDS(on) (0.125 Ω), same DPAK package and pinout Not suitable for 48 V+ bus applications; better for 12–24 V systems requiring lower conduction loss Select only if system max VDS stress remains ≤40 V and thermal budget allows higher ID derating
SiHFR120TR-GE3 Identical electrical specs and DPAK package; differs only in halogen-free material compliance and manufacturing location No functional difference; qualified for RoHS/halogen-free requirements where IRFR120TRRPBF-BE3 is not mandated Drop-in replacement when lead-free/halogen-free certification is required per customer BOM policy

Compared with IRFR120TRRPBF-BE3, IRFR1205TRPBF trades off voltage rating for lower on-resistance in lower-voltage systems, while SiHFR120TR-GE3 provides identical performance with alternate environmental compliance-neither requires PCB layout changes, but only SiHFR120TR-GE3 is halogen-free certified.

Availability

IRFR120TRRPBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply across multi-year production cycles.

Supply support for IRFR120TRRPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRFR120 series belongs to Vishay's third-generation TrenchFET® power MOSFET family, engineered for high-reliability industrial and automotive-qualified power switching applications demanding avalanche robustness and thermal stability.

FAQ

What is the maximum continuous drain current for IRFR120TRRPBF-BE3 at 100 °C case temperature?

The IRFR120TRRPBF-BE3 supports 4.9 A continuous drain current at TC = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and must be validated against actual board layout, copper area, and ambient conditions using the 0.33 W/°C linear derating factor from 42 W at 25 °C.

Does IRFR120TRRPBF-BE3 have a logic-level gate drive requirement?

No, IRFR120TRRPBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.0 V, but full enhancement requires VGS = 10 V to achieve the specified 0.27 Ω RDS(on). Driving it with 5 V may result in significantly higher on-resistance and thermal stress; a gate driver capable of 10 V output is recommended.

Can IRFR120TRRPBF-BE3 be used in avalanche mode repeatedly?

Yes, IRFR120TRRPBF-BE3 is explicitly rated for repetitive avalanche operation: 7.7 A IAR and 4.2 mJ EAR at TJ ≤ 150 °C. This capability is validated per test condition "b" in the datasheet and enables use in inductive switching without external clamping diodes in properly designed circuits.

What is the thermal resistance from junction to ambient for IRFR120TRRPBF-BE3 on a standard PCB?

When mounted on a 1" square FR-4 PCB, IRFR120TRRPBF-BE3 has RthJA = 50 °C/W. This value assumes minimal copper area; adding thermal vias and extended copper pours can improve this significantly. For heatsink-mounted operation, RthJC = 3.0 °C/W governs the primary thermal path.

Is the "-BE3" suffix in IRFR120TRRPBF-BE3 indicative of a different electrical specification?

No, the "-BE3" suffix in IRFR120TRRPBF-BE3 denotes an alternate manufacturing location and Pb-free/halogen-free compliance per Vishay's material categorization standards-it does not alter electrical specifications, package dimensions, or performance characteristics relative to non-BE3 variants like IRFR120TRRPBF.

IRFR120TRRPBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA

IRFR120TRRPBF-BE3 FAQ

1.How can I place an order for IRFR120TRRPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120TRRPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120TRRPBF-BE3 reliable?

The price and inventory of IRFR120TRRPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120TRRPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFR120TRRPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120TRRPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120TRRPBF-BE3?

IRFR120TRRPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120TRRPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120TRRPBF-BE3?

For technical support, including IRFR120TRRPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120TRRPBF-BE3 requirements.

6.How does Aetrix verify that IRFR120TRRPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFR120TRRPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120TRRPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFR120TRRPBF-BE3?

All IRFR120TRRPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120TRRPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120TRRPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFR120TRRPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFR120TRRPBF-BE3 Tags

  • IRFR120TRRPBF-BE3
  • IRFR120TRRPBF-BE3 PDF
  • IRFR120TRRPBF-BE3 Datasheet
  • IRFR120TRRPBF-BE3 Specifications
  • IRFR120TRRPBF-BE3 Images
  • Vishay Siliconix
  • Vishay Siliconix IRFR120TRRPBF-BE3
  • Buy IRFR120TRRPBF-BE3
  • IRFR120TRRPBF-BE3 Price
  • IRFR120TRRPBF-BE3 Distributor
  • IRFR120TRRPBF-BE3 Supplier
  • IRFR120TRRPBF-BE3 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER