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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR1N60A

Name: IRFR1N60A
Brand: Vishay Siliconix
SKU: IRFR1N60A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1N60A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1N60A.pdf

Description:: MOSFET N-CH 600V 1.4A DPAK

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Product details

Overview

IRFR1N60A from Vishay Siliconix is a 600 V, 1.4 A N-channel enhancement-mode power MOSFET in DPAK (TO-252) package, featuring 7.0 Ω R_DS(on) at V_GS = 10 V, 14 nC total gate charge, and 93 mJ single-pulse avalanche energy - designed for high-voltage, low-current switching in flyback SMPS and PFC stages.

For engineers reviewing the IRFR1N60A datasheet, IRFR1N60A pinout, IRFR1N60A application, or IRFR1N60A equivalent, key selection criteria include its 600 V V_DS rating, 1.4 A continuous drain current at T_C = 25 °C, 3.5 °C/W junction-to-case thermal resistance, and verified unclamped inductive switching ruggedness per JEDEC JESD24-11.

Technical Context

This MOSFET employs planar V-groove silicon technology optimized for high-voltage blocking and controlled dV/dt immunity. Its gate structure delivers low Q_g (14 nC) and Q_gd/Q_gs ratio of ~3.0, enabling stable operation under fast-switching conditions with minimal Miller-induced shoot-through risk.

The integrated body diode exhibits 290–440 ns reverse recovery time (t_rr) and 510–760 μC Q_rr at I_F = 1.4 A, dI/dt = 100 A/μs, supporting moderate-frequency discontinuous conduction mode (DCM) flyback topologies without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input offline SMPS up to 480 V DC bus.
R_DS(on) max	7.0 Ω at V_GS = 10 V - determines conduction loss in low-current (<1.4 A) high-voltage applications.
Q_g max	14 nC - enables direct drive from standard PWM controllers without gate driver amplification.
E_AS	93 mJ - ensures robustness against inductive turn-off transients in unclamped flyback and boost converters.
t_rr	290–440 ns - defines minimum dead-time requirements when used in synchronous rectification or half-bridge configurations.
R_thJC	3.5 °C/W - allows 36 W power dissipation with ≤126 °C junction rise above 25 °C case temperature.
I_D cont.	1.4 A at T_C = 25 °C - sets maximum continuous load capability in thermally constrained PCB-mount designs.

Pinout & Package

DPAK (TO-252) surface-mount package with exposed drain pad on bottom side for thermal conduction to PCB copper area; standardized 3-pin layout compatible with IPC-7351B footprint.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; 2.7 nC Q_gs enables fast turn-on with minimal Miller plateau duration.
D (Drain)	High-voltage output terminal	Internally connected to exposed thermal pad; must be routed over ≥100 mm² copper pour for thermal management.
S (Source)	Reference node / return path	Provides Kelvin connection point for current sensing; ties to ground plane in flyback primary-side switch configuration.

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	14 nC total gate charge with 8.1 nC Q_gd yields predictable switching transitions and reduced EMI in 50–500 kHz SMPS.
Avalanche-rated structure	93 mJ single-pulse E_AS validated per JEDEC JESD24-11 - eliminates need for external clamping in cost-sensitive flyback designs.
Characterized C_oss eff.	130 pF effective output capacitance from 0–480 V - enables accurate snubberless soft-switching analysis in resonant topologies.
Body diode dV/dt immunity	3.8 V/ns peak diode recovery dV/dt - prevents false turn-on during high dv/dt commutation in transformer-coupled circuits.
Thermal performance	3.5 °C/W R_thJC with DPAK mounting - achieves 150 °C max junction temperature at 1.4 A with 50 °C ambient and 2 oz copper.

Applications

AC-DC Flyback Converter	Power Factor Correction (PFC)
Use Scenario: Primary-side switch in 10–30 W universal-input offline flyback power supplies. IC Role / Device Role / Timing Role: High-voltage switching element operating in discontinuous conduction mode (DCM) at 65–130 kHz. Use Value: 600 V V_DS and 93 mJ E_AS enable reliable operation across 85–265 V AC input without voltage clamping components.	Use Scenario: Boost switch in active PFC front-end for LED drivers and industrial power supplies. IC Role / Device Role / Timing Role: Unidirectional current-handling switch in continuous conduction mode (CCM) PFC stage. Use Value: 7.0 Ω R_DS(on) limits conduction loss at 1.4 A peak inductor current; 14 nC Q_g supports efficient 65 kHz switching.
Uninterruptible Power Supply (UPS)	DC-DC Isolated Converters
Use Scenario: Battery backup DC-DC stage and inverter primary switch in line-interactive UPS systems. IC Role / Device Role / Timing Role: High-reliability switching device handling surge currents up to 5.6 A IDM during battery discharge. Use Value: 5.6 A pulsed drain current and 150 °C T_J rating ensure sustained operation during brownout and overload events.	Use Scenario: Isolated gate driver supply switch or auxiliary bias winding controller in telecom DC-DC modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch powering isolated gate driver ICs from main rail. Use Value: 600 V blocking capability safely isolates 400 V bus from low-voltage control circuitry; DPAK footprint simplifies layout isolation.

AC-DC Flyback Converter

Power Factor Correction (PFC)

Use Scenario: Primary-side switch in 10–30 W universal-input offline flyback power supplies.

IC Role / Device Role / Timing Role: High-voltage switching element operating in discontinuous conduction mode (DCM) at 65–130 kHz.

Use Value: 600 V V_DS and 93 mJ E_AS enable reliable operation across 85–265 V AC input without voltage clamping components.

Use Scenario: Boost switch in active PFC front-end for LED drivers and industrial power supplies.

IC Role / Device Role / Timing Role: Unidirectional current-handling switch in continuous conduction mode (CCM) PFC stage.

Use Value: 7.0 Ω R_DS(on) limits conduction loss at 1.4 A peak inductor current; 14 nC Q_g supports efficient 65 kHz switching.

Uninterruptible Power Supply (UPS)

DC-DC Isolated Converters

Use Scenario: Battery backup DC-DC stage and inverter primary switch in line-interactive UPS systems.

IC Role / Device Role / Timing Role: High-reliability switching device handling surge currents up to 5.6 A IDM during battery discharge.

Use Value: 5.6 A pulsed drain current and 150 °C T_J rating ensure sustained operation during brownout and overload events.

Use Scenario: Isolated gate driver supply switch or auxiliary bias winding controller in telecom DC-DC modules.

IC Role / Device Role / Timing Role: Low-duty-cycle, high-V_DS switch powering isolated gate driver ICs from main rail.

Use Value: 600 V blocking capability safely isolates 400 V bus from low-voltage control circuitry; DPAK footprint simplifies layout isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V, 1.05 A I_D, 9.5 Ω R_DS(on), 12 nC Q_g, TO-220 package	Lower current rating and through-hole mounting require PCB redesign; higher R_DS(on) increases conduction loss at same current.	Choose only if TO-220 mechanical retention or legacy board compatibility is required.
SiHFU1N60A	Identical electrical specs; IPAK (TO-251) package with vertical leadform instead of DPAK's gull-wing leads	Same die but different thermal pad exposure and solder joint geometry - affects thermal resistance and reflow profile.	Select SiHFU1N60A only when vertical mounting or tighter height constraints make IPAK preferable over DPAK.

Compared with STP1NK60Z and SiHFU1N60A, the IRFR1N60A offers optimal balance of surface-mount compatibility, 1.4 A current headroom, and 3.5 °C/W thermal resistance in DPAK - making it the preferred choice for new SMT-based flyback and PFC designs where board space and thermal performance are critical.

Availability

IRFR1N60A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and power factor correction circuits requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRFR1N60A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFR1N60A belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for cost-sensitive, low-power offline power conversion where avalanche ruggedness and gate drive simplicity are essential.

FAQ

What is the maximum continuous drain current for IRFR1N60A at 100 °C case temperature?

The IRFR1N60A supports 0.89 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the DPAK package and must be applied in thermally constrained environments such as enclosed power supplies or high-ambient-temperature deployments. Designers should verify junction temperature using R_thJC = 3.5 °C/W and actual power dissipation.

Does IRFR1N60A have avalanche capability, and how is it rated?

Yes, the IRFR1N60A is fully rated for unclamped inductive switching: 93 mJ single-pulse avalanche energy (E_AS) and 3.6 mJ repetitive avalanche energy (E_AR). These values are measured per JEDEC JESD24-11 with L = 95 mH, R_g = 25 Ω, and I_AS = 1.4 A. The device does not require external avalanche protection in properly designed flyback converters.

What is the gate threshold voltage range for IRFR1N60A, and how does it affect drive requirements?

The IRFR1N60A has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This places it in the standard-threshold category - not a logic-level MOSFET - so it requires ≥10 V gate drive for full enhancement. Driving below 8 V risks incomplete turn-on and excessive R_DS(on)-related losses.

Can IRFR1N60A be used in place of IRFR1N60APbF or IRFR1N60ATRPbF-BE3?

Yes, IRFR1N60A is the base part number; IRFR1N60APbF denotes the leaded version, while IRFR1N60ATRPbF-BE3 specifies tape-and-reel packaging and alternate manufacturing location (BE3). All share identical electrical specifications, thermal characteristics, and DPAK (TO-252) package dimensions - making them functionally and mechanically interchangeable in design.

What is the recommended PCB pad layout for IRFR1N60A in DPAK package?

Vishay recommends a minimum 0.224" × 0.420" (5.69 mm × 10.67 mm) copper pad for the drain thermal pad, with 0.055" (1.397 mm) soldermask opening to maximize thermal transfer. The G and S pins use standard 0.087" (2.20 mm) wide traces. Full layout guidelines are provided in Application Note 826 (Document #72594).

IRFR1N60A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 229 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR1N60A FAQ

1.How can I place an order for IRFR1N60A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1N60A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1N60A reliable?

The price and inventory of IRFR1N60A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1N60A is usually 5 days.

3.What payment methods are accepted for IRFR1N60A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1N60A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1N60A?

IRFR1N60A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1N60A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1N60A?

For technical support, including IRFR1N60A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1N60A requirements.

6.How does Aetrix verify that IRFR1N60A is sourced from the original manufacturer or authorized distributors?

All IRFR1N60A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1N60A meets industry standards.

7.What is the process for return or replacement of IRFR1N60A?

All IRFR1N60A units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1N60A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1N60A part is unused and in its original packaging.

Return procedure for IRFR1N60A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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